WO2011014011A3 - 가교성 경화 물질을 포함하는 포토레지스트 조성물 - Google Patents

가교성 경화 물질을 포함하는 포토레지스트 조성물 Download PDF

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Publication number
WO2011014011A3
WO2011014011A3 PCT/KR2010/004969 KR2010004969W WO2011014011A3 WO 2011014011 A3 WO2011014011 A3 WO 2011014011A3 KR 2010004969 W KR2010004969 W KR 2010004969W WO 2011014011 A3 WO2011014011 A3 WO 2011014011A3
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WO
WIPO (PCT)
Prior art keywords
weight
light
parts
photoresist composition
pattern
Prior art date
Application number
PCT/KR2010/004969
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English (en)
French (fr)
Other versions
WO2011014011A2 (ko
WO2011014011A9 (ko
Inventor
장유진
이준경
한동우
김정식
이정열
이재우
김덕배
김재현
Original Assignee
주식회사 동진쎄미켐
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 주식회사 동진쎄미켐 filed Critical 주식회사 동진쎄미켐
Publication of WO2011014011A2 publication Critical patent/WO2011014011A2/ko
Publication of WO2011014011A9 publication Critical patent/WO2011014011A9/ko
Publication of WO2011014011A3 publication Critical patent/WO2011014011A3/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

이중 패터닝 기술을 이용한 패턴 형성 방법에서, 포토레지스트 패턴 형성 후, 가열 또는 노광 및 가열에 의해 포토레지스트 패턴 표면에 패턴 보호막을 형성할 수 있는, 가교성 경화 물질을 포함하는 포토레지스트 조성물이 개시된다. 상기 포토레지스트 조성물은, 감광성 고분자 3 내지 30중량%; 상기 감광성 고분자 100중량부에 대하여, 청구항 1의 화학식 1 및/또는 화학식 2로 표시되는 가교 경화제 0.5 내지 75중량부; 상기 감광성 고분자 100중량부에 대하여, 광산발생제 0.05 내지 15중량부; 및 나머지 용매를 포함한다.
PCT/KR2010/004969 2009-07-28 2010-07-28 가교성 경화 물질을 포함하는 포토레지스트 조성물 WO2011014011A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20090068858 2009-07-28
KR10-2009-0068858 2009-07-28

Publications (3)

Publication Number Publication Date
WO2011014011A2 WO2011014011A2 (ko) 2011-02-03
WO2011014011A9 WO2011014011A9 (ko) 2011-03-24
WO2011014011A3 true WO2011014011A3 (ko) 2011-06-09

Family

ID=43529872

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2010/004969 WO2011014011A2 (ko) 2009-07-28 2010-07-28 가교성 경화 물질을 포함하는 포토레지스트 조성물

Country Status (2)

Country Link
KR (1) KR101855504B1 (ko)
WO (1) WO2011014011A2 (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101863635B1 (ko) * 2011-06-10 2018-06-04 주식회사 동진쎄미켐 포토리소그래피용 세정액 조성물 및 이를 이용한 포토레지스트 미세패턴 형성방법
JP6233240B2 (ja) * 2013-09-26 2017-11-22 信越化学工業株式会社 パターン形成方法
EP3136173B1 (en) * 2014-04-22 2019-03-13 Zeon Corporation Radiation-sensitive resin composition, resin film, and electronic device
US10394126B2 (en) 2015-07-17 2019-08-27 Taiwan Semiconductor Manufacturing Company, Ltd. Photolithography process and materials
KR102289697B1 (ko) * 2015-12-29 2021-08-13 삼성에스디아이 주식회사 유기막 조성물 및 패턴형성방법
KR102592282B1 (ko) * 2021-08-18 2023-10-20 인하대학교 산학협력단 패터닝 후 기능화 가능 네거티브 포토레지스트 조성물 및 그의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4705740A (en) * 1984-07-26 1987-11-10 Hoechst Aktiengesellschaft Radiation-polymerizable mixture, copolymer contained therein, and a process for the preparation of the copolymer
KR20020031081A (ko) * 2000-10-20 2002-04-26 무네유키 가코우 포지티브 감광성 조성물
JP2002265436A (ja) * 2001-03-08 2002-09-18 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2006208546A (ja) * 2005-01-26 2006-08-10 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0935635A1 (en) * 1996-10-30 1999-08-18 Cytec Technology Corp. Liquid cross-linker compositions containing 1,3,5-triazine carbamate/aminoplast resin mixtures

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4705740A (en) * 1984-07-26 1987-11-10 Hoechst Aktiengesellschaft Radiation-polymerizable mixture, copolymer contained therein, and a process for the preparation of the copolymer
KR20020031081A (ko) * 2000-10-20 2002-04-26 무네유키 가코우 포지티브 감광성 조성물
JP2002265436A (ja) * 2001-03-08 2002-09-18 Fuji Photo Film Co Ltd ポジ型レジスト組成物
JP2006208546A (ja) * 2005-01-26 2006-08-10 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法

Also Published As

Publication number Publication date
WO2011014011A2 (ko) 2011-02-03
WO2011014011A9 (ko) 2011-03-24
KR101855504B1 (ko) 2018-05-08
KR20110011585A (ko) 2011-02-08

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