WO2011014011A3 - 가교성 경화 물질을 포함하는 포토레지스트 조성물 - Google Patents
가교성 경화 물질을 포함하는 포토레지스트 조성물 Download PDFInfo
- Publication number
- WO2011014011A3 WO2011014011A3 PCT/KR2010/004969 KR2010004969W WO2011014011A3 WO 2011014011 A3 WO2011014011 A3 WO 2011014011A3 KR 2010004969 W KR2010004969 W KR 2010004969W WO 2011014011 A3 WO2011014011 A3 WO 2011014011A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- weight
- light
- parts
- photoresist composition
- pattern
- Prior art date
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/40—Treatment after imagewise removal, e.g. baking
- G03F7/405—Treatment with inorganic or organometallic reagents after imagewise removal
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials For Photolithography (AREA)
- Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
이중 패터닝 기술을 이용한 패턴 형성 방법에서, 포토레지스트 패턴 형성 후, 가열 또는 노광 및 가열에 의해 포토레지스트 패턴 표면에 패턴 보호막을 형성할 수 있는, 가교성 경화 물질을 포함하는 포토레지스트 조성물이 개시된다. 상기 포토레지스트 조성물은, 감광성 고분자 3 내지 30중량%; 상기 감광성 고분자 100중량부에 대하여, 청구항 1의 화학식 1 및/또는 화학식 2로 표시되는 가교 경화제 0.5 내지 75중량부; 상기 감광성 고분자 100중량부에 대하여, 광산발생제 0.05 내지 15중량부; 및 나머지 용매를 포함한다.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20090068858 | 2009-07-28 | ||
KR10-2009-0068858 | 2009-07-28 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2011014011A2 WO2011014011A2 (ko) | 2011-02-03 |
WO2011014011A9 WO2011014011A9 (ko) | 2011-03-24 |
WO2011014011A3 true WO2011014011A3 (ko) | 2011-06-09 |
Family
ID=43529872
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2010/004969 WO2011014011A2 (ko) | 2009-07-28 | 2010-07-28 | 가교성 경화 물질을 포함하는 포토레지스트 조성물 |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101855504B1 (ko) |
WO (1) | WO2011014011A2 (ko) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101863635B1 (ko) * | 2011-06-10 | 2018-06-04 | 주식회사 동진쎄미켐 | 포토리소그래피용 세정액 조성물 및 이를 이용한 포토레지스트 미세패턴 형성방법 |
JP6233240B2 (ja) * | 2013-09-26 | 2017-11-22 | 信越化学工業株式会社 | パターン形成方法 |
US10775697B2 (en) * | 2014-04-22 | 2020-09-15 | Zeon Corporation | Radiation-sensitive resin composition, resin film, and electronic device |
US10394126B2 (en) | 2015-07-17 | 2019-08-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Photolithography process and materials |
KR102289697B1 (ko) * | 2015-12-29 | 2021-08-13 | 삼성에스디아이 주식회사 | 유기막 조성물 및 패턴형성방법 |
KR102592282B1 (ko) * | 2021-08-18 | 2023-10-20 | 인하대학교 산학협력단 | 패터닝 후 기능화 가능 네거티브 포토레지스트 조성물 및 그의 제조 방법 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4705740A (en) * | 1984-07-26 | 1987-11-10 | Hoechst Aktiengesellschaft | Radiation-polymerizable mixture, copolymer contained therein, and a process for the preparation of the copolymer |
KR20020031081A (ko) * | 2000-10-20 | 2002-04-26 | 무네유키 가코우 | 포지티브 감광성 조성물 |
JP2002265436A (ja) * | 2001-03-08 | 2002-09-18 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2006208546A (ja) * | 2005-01-26 | 2006-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターン形成方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0935635A1 (en) * | 1996-10-30 | 1999-08-18 | Cytec Technology Corp. | Liquid cross-linker compositions containing 1,3,5-triazine carbamate/aminoplast resin mixtures |
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2010
- 2010-07-28 KR KR1020100072921A patent/KR101855504B1/ko active IP Right Grant
- 2010-07-28 WO PCT/KR2010/004969 patent/WO2011014011A2/ko active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4705740A (en) * | 1984-07-26 | 1987-11-10 | Hoechst Aktiengesellschaft | Radiation-polymerizable mixture, copolymer contained therein, and a process for the preparation of the copolymer |
KR20020031081A (ko) * | 2000-10-20 | 2002-04-26 | 무네유키 가코우 | 포지티브 감광성 조성물 |
JP2002265436A (ja) * | 2001-03-08 | 2002-09-18 | Fuji Photo Film Co Ltd | ポジ型レジスト組成物 |
JP2006208546A (ja) * | 2005-01-26 | 2006-08-10 | Tokyo Ohka Kogyo Co Ltd | レジストパターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011014011A9 (ko) | 2011-03-24 |
WO2011014011A2 (ko) | 2011-02-03 |
KR101855504B1 (ko) | 2018-05-08 |
KR20110011585A (ko) | 2011-02-08 |
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