DE602005026367D1 - Mikrooptik auf optoelektronik - Google Patents

Mikrooptik auf optoelektronik

Info

Publication number
DE602005026367D1
DE602005026367D1 DE602005026367T DE602005026367T DE602005026367D1 DE 602005026367 D1 DE602005026367 D1 DE 602005026367D1 DE 602005026367 T DE602005026367 T DE 602005026367T DE 602005026367 T DE602005026367 T DE 602005026367T DE 602005026367 D1 DE602005026367 D1 DE 602005026367D1
Authority
DE
Germany
Prior art keywords
optical
active
optical components
structures
optoelectronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602005026367T
Other languages
German (de)
English (en)
Inventor
Hartmut Rudmann
Markus Rossi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Sensors Singapore Pte Ltd
Original Assignee
Heptagon Oy
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heptagon Oy filed Critical Heptagon Oy
Publication of DE602005026367D1 publication Critical patent/DE602005026367D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/40—Optical elements or arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12044—OLED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H01L2924/1815—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Casting Or Compression Moulding Of Plastics Or The Like (AREA)
  • Optical Integrated Circuits (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
  • Optical Measuring Cells (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Hybrid Cells (AREA)
DE602005026367T 2004-02-27 2005-02-25 Mikrooptik auf optoelektronik Expired - Lifetime DE602005026367D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP04405110A EP1569276A1 (en) 2004-02-27 2004-02-27 Micro-optics on optoelectronics
PCT/CH2005/000109 WO2005083789A2 (en) 2004-02-27 2005-02-25 Micro-optics on optoelectronics

Publications (1)

Publication Number Publication Date
DE602005026367D1 true DE602005026367D1 (de) 2011-03-31

Family

ID=34746192

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005026367T Expired - Lifetime DE602005026367D1 (de) 2004-02-27 2005-02-25 Mikrooptik auf optoelektronik

Country Status (9)

Country Link
US (1) US7457490B2 (enExample)
EP (2) EP1569276A1 (enExample)
JP (1) JP4903685B2 (enExample)
KR (1) KR101194452B1 (enExample)
CN (1) CN1947254B (enExample)
AT (1) ATE498910T1 (enExample)
DE (1) DE602005026367D1 (enExample)
TW (1) TWI362058B (enExample)
WO (1) WO2005083789A2 (enExample)

Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6297548B1 (en) 1998-06-30 2001-10-02 Micron Technology, Inc. Stackable ceramic FBGA for high thermal applications
KR20080074186A (ko) * 2005-11-22 2008-08-12 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 발광 모듈, 조명 장치, 및 적층 시트 요소 제조 방법
JP2007258672A (ja) * 2006-02-22 2007-10-04 Sharp Corp 発光ダイオード及びその製造方法
JP4765663B2 (ja) * 2006-02-23 2011-09-07 パナソニック電工株式会社 赤外線通信用モジュールの製造方法
US7785915B2 (en) * 2006-10-30 2010-08-31 Aptina Imaging Corporation Wafer level method of locating focal plane of imager devices
US20080181558A1 (en) * 2007-01-31 2008-07-31 Hartwell Peter G Electronic and optical circuit integration through wafer bonding
US7754600B2 (en) 2007-03-01 2010-07-13 Hewlett-Packard Development Company, L.P. Methods of forming nanostructures on metal-silicide crystallites, and resulting structures and devices
US20090032925A1 (en) * 2007-07-31 2009-02-05 England Luke G Packaging with a connection structure
CN101784378A (zh) 2007-08-31 2010-07-21 柯尼卡美能达精密光学株式会社 成型方法、光学元件制造方法及阵列状光学元件
EP2060493B1 (en) * 2007-11-13 2010-06-23 Oy M. Haloila Ab Film delivery device and use of same
TWI478808B (zh) 2007-12-19 2015-04-01 Heptagon Micro Optics Pte Ltd 製造光學元件的方法
TWI481496B (zh) * 2007-12-19 2015-04-21 Heptagon Micro Optics Pte Ltd 製造光學元件的方法
SG142321A1 (en) 2008-04-24 2009-11-26 Micron Technology Inc Pre-encapsulated cavity interposer
GB2460822A (en) * 2008-06-03 2009-12-16 Cambridge Display Tech Ltd Organic electroluminescent device
US7920342B2 (en) * 2008-07-01 2011-04-05 Aptina Imaging Corporation Over-molded glass lenses and method of forming the same
JP5246260B2 (ja) 2008-07-04 2013-07-24 コニカミノルタアドバンストレイヤー株式会社 撮像レンズ、その製造方法及び撮像ユニット
CN101364568B (zh) * 2008-07-10 2011-11-30 旭丽电子(广州)有限公司 镜头模块的制造方法及以该方法所制成的镜头模块
TWI419557B (zh) * 2008-07-11 2013-12-11 Lite On Electronics Guangzhou 鏡頭模組、其製作方法及形成多個鏡頭模組的晶圓結構
US8828174B2 (en) 2008-08-20 2014-09-09 Heptagon Micro Optics Pte. Ltd. Method of manufacturing a plurality of optical devices
JP5715747B2 (ja) * 2008-09-30 2015-05-13 セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー 回路装置およびその製造方法
US20110187878A1 (en) * 2010-02-02 2011-08-04 Primesense Ltd. Synchronization of projected illumination with rolling shutter of image sensor
CN103201838A (zh) 2010-06-14 2013-07-10 赫普塔冈微光学有限公司 制造多个光学设备的方法
SG193151A1 (en) 2011-07-19 2013-09-30 Heptagon Micro Optics Pte Ltd Opto-electronic modules and methods of manufacturing the same and appliances and devices comprising the same
EP2735029B1 (en) 2011-07-19 2022-12-21 Heptagon Micro Optics Pte. Ltd. Method for manufacturing passive optical components, and devices comprising the same
SG10201606075XA (en) 2011-08-10 2016-09-29 Heptagon Micro Optics Pte Ltd Opto-electronic module and method for manufacturing the same
DE102011113483B4 (de) * 2011-09-13 2023-10-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Bauelementen und optoelektronisches Bauelement
SG10201602612PA (en) * 2011-10-06 2016-05-30 Heptagon Micro Optics Pte Ltd Method for wafer-level manufacturing of objects and corresponding semi-finished products
WO2013091829A1 (en) 2011-12-22 2013-06-27 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules, in particular flash modules, and method for manufacturing the same
US9329080B2 (en) 2012-02-15 2016-05-03 Aplle Inc. Modular optics for scanning engine having beam combining optics with a prism intercepted by both beam axis and collection axis
US9157790B2 (en) 2012-02-15 2015-10-13 Apple Inc. Integrated optoelectronic modules with transmitter, receiver and beam-combining optics for aligning a beam axis with a collection axis
TW201417250A (zh) * 2012-07-17 2014-05-01 海特根微光學公司 光學模組，特別是光電模組，及其製造方法
US9634051B2 (en) 2012-07-17 2017-04-25 Heptagon Micro Optics Pte. Ltd. Optical devices, in particular computational cameras, and methods for manufacturing the same
TWI707483B (zh) 2012-07-17 2020-10-11 新加坡商新加坡恒立私人有限公司 發射可變強度分布的光線的光電模組
TWM448798U (zh) * 2012-08-10 2013-03-11 麥瑟半導體股份有限公司 光學元件封裝模組
DE102012109183A1 (de) * 2012-09-27 2014-03-27 Osram Opto Semiconductors Gmbh Optoelektronische Vorrichtung
US8606057B1 (en) 2012-11-02 2013-12-10 Heptagon Micro Optics Pte. Ltd. Opto-electronic modules including electrically conductive connections for integration with an electronic device
KR102334469B1 (ko) * 2013-12-10 2021-12-02 에이엠에스 센서스 싱가포르 피티이. 리미티드. 웨이퍼-레벨 광학 모듈 및 그 제조 방법
US10018788B2 (en) 2014-10-28 2018-07-10 Hewlett Packard Enterprise Development Lp Photonic interposer with wafer bonded microlenses
DE102014116134A1 (de) * 2014-11-05 2016-05-12 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements und optoelektronisches Bauelement
EP3243119A1 (de) * 2015-01-06 2017-11-15 Huf Hülsbeck & Fürst GmbH & Co. KG Optische vorrichtung zur belichtung einer sensorvorrichtung für ein fahrzeug
RU2713080C1 (ru) 2015-10-01 2020-02-03 Конинклейке Филипс Н.В. Светоизлучающее устройство
DE102016103123A1 (de) * 2016-02-23 2017-08-24 Vishay Semiconductor Gmbh Optoelektronische Vorrichtung
TWI735562B (zh) * 2016-04-08 2021-08-11 新加坡商新加坡恒立私人有限公司 具有孔徑之薄光電模組及其製造
DE102017100997A1 (de) * 2017-01-19 2018-07-19 Osram Opto Semiconductors Gmbh Halbleiterlaser und Verfahren zur Herstellung eines solchen Halbleiterlasers
KR102698883B1 (ko) * 2019-02-22 2024-08-28 삼성디스플레이 주식회사 표시장치 및 그의 제조방법
CN113557126B (zh) * 2019-03-12 2023-12-12 ams传感器新加坡私人有限公司 制造多个光学元件的方法及其产品
EP3986718A4 (en) * 2019-06-24 2022-09-14 Magic Leap, Inc. FABRICATION OF POLYMER PATTERN DISC STACKS
US10777611B1 (en) * 2019-09-27 2020-09-15 Sony Semiconductor Solutions Corporation Image sensor
US11747555B2 (en) 2021-10-04 2023-09-05 Eagle Technology, Llc Optical assembly having commonly-shaped optical modules and associated methods

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56103483A (en) * 1980-01-21 1981-08-18 Fuji Photo Film Co Ltd Manufacture of semiconductor device for photoelectric conversion
JPH07111343A (ja) * 1993-10-13 1995-04-25 Matsushita Electron Corp 光電装置
US20020053742A1 (en) * 1995-09-01 2002-05-09 Fumio Hata IC package and its assembly method
US6235141B1 (en) * 1996-09-27 2001-05-22 Digital Optics Corporation Method of mass producing and packaging integrated optical subsystems
JPH11340480A (ja) 1998-05-21 1999-12-10 Tokai Rika Co Ltd プラスティックパッケージ
US6436265B1 (en) 1999-03-29 2002-08-20 Canon Kabushiki Kaisha Microstructure array, and apparatus and method for forming the microstructure array, and a mold for fabricating a microstructure array
JP2000275405A (ja) * 1999-03-29 2000-10-06 Canon Inc マイクロ構造体アレイの作製方法、マイクロレンズアレイ用金型の作製方法、及びこれを用いたマイクロレンズアレイの作製方法
TW588414B (en) * 2000-06-08 2004-05-21 Toshiba Corp Alignment method, overlap inspecting method and mask
US20040012698A1 (en) * 2001-03-05 2004-01-22 Yasuo Suda Image pickup model and image pickup device
JP2002353763A (ja) * 2001-05-29 2002-12-06 Mitsubishi Electric Corp 圧電素子デバイスの製造方法
JP4167443B2 (ja) 2002-01-30 2008-10-15 日本放送協会 固体撮像素子
JP2004063751A (ja) 2002-07-29 2004-02-26 Fuji Photo Film Co Ltd 固体撮像素子およびその製造方法
GB0213722D0 (en) * 2002-06-14 2002-07-24 Suisse Electronique Microtech Micro electrical mechanical systems
US7414661B2 (en) * 2002-08-13 2008-08-19 Micron Technology, Inc. CMOS image sensor using gradient index chip scale lenses
JP4241457B2 (ja) * 2003-06-26 2009-03-18 富士ゼロックス株式会社 レンズ付き発光素子の製造方法

Also Published As

Publication number Publication date
EP1719178B1 (en) 2011-02-16
US7457490B2 (en) 2008-11-25
KR20070004774A (ko) 2007-01-09
TW200532761A (en) 2005-10-01
WO2005083789A2 (en) 2005-09-09
KR101194452B1 (ko) 2012-10-24
EP1569276A1 (en) 2005-08-31
CN1947254A (zh) 2007-04-11
EP1719178A2 (en) 2006-11-08
WO2005083789A3 (en) 2006-05-11
US20070009223A1 (en) 2007-01-11
TWI362058B (en) 2012-04-11
CN1947254B (zh) 2010-12-29
JP4903685B2 (ja) 2012-03-28
JP2007524243A (ja) 2007-08-23
ATE498910T1 (de) 2011-03-15

Similar Documents

Publication Publication Date Title
ATE498910T1 (de) Mikrooptik auf optoelektronik
WO2021116766A8 (en) Optical sensing module
WO2008000244A3 (de) Optoelektronisches bauteil und beleuchtungseinrichtung
WO2007025525A3 (de) Lichtemittierendes modul insbesondere zur verwendung in einem optischen projektionsgerät und optisches projektionsgerät
KR970018876A (ko) 광 전달 구조물을 정렬하기 위한 전자 장치
WO2004048881A3 (de) Messeinrichtung zur optischen untersuchung eines testelements
WO2002052335A3 (en) Variable focal length micro lens array field curvature corrector
WO2020017180A9 (ja) 光検出装置、半導体光検出素子、及び半導体光検出素子の駆動方法
TW366599B (en) Optoelectronic converter and its manufacturing method
DE60100903D1 (de) Optischer Faserverstärker und Kommunikationssystem unter Verwendung desselben
WO2009020165A1 (ja) フィルム光導波路パッケージ、フィルム光導波路モジュールおよび電子機器
IL126993A0 (en) Siloxane and siloxane derivatives as encapsulants for organic light emitting devices
TW200642121A (en) Illumination device
RU2011142621A (ru) Керамический держатель оптики
DK1476658T3 (da) Fremgangsmåde til transport af en vindmöllenacelle samt anvendelse heraf
JP2016178218A (ja) 光送信モジュール
TW200710532A (en) Multi-bandpass filter for a projection device
CN104555886A (zh) 具有集成光电二极管的微机械构件以及微投影仪
ITTO20031034A1 (it) Spettrofotometro con micro-filtri.
WO2005094483A3 (en) Scanning optical devices and systems
DE60309313D1 (de) Festkörperlaser, gepumpt von einer Laserdiode mit einem konvergenten Bündel
ATE364189T1 (de) Filter zur kontraststeigerung und diesen filter verwendendes anzeigegerät
CA2165711A1 (en) Semiconductor Light Source Having a Spectrally Broad, High Power Optical Output
EP1976023A3 (en) Optical semiconductor module and light receiving element
WO2005006401A3 (en) Optical sub-assembly laser mount having integrated microlens

Legal Events

Date Code Title Description
R082 Change of representative

Ref document number: 1719178

Country of ref document: EP

Representative=s name: OSTERTAG & PARTNER, PATENTANWAELTE, DE

R081 Change of applicant/patentee

Ref document number: 1719178

Country of ref document: EP

Owner name: HEPTAGON MICRO OPTICS PTE. LTD., SG

Free format text: FORMER OWNER: HEPTAGON OY, ESPOO, FI

Effective date: 20120808

R082 Change of representative

Ref document number: 1719178

Country of ref document: EP

Representative=s name: OSTERTAG & PARTNER, PATENTANWAELTE, DE

Effective date: 20120808