DE602005025722D1 - Verarbeitungsverfahren für Objekte mit einem Oberflächenteil aus einem Isolator - Google Patents

Verarbeitungsverfahren für Objekte mit einem Oberflächenteil aus einem Isolator

Info

Publication number
DE602005025722D1
DE602005025722D1 DE602005025722T DE602005025722T DE602005025722D1 DE 602005025722 D1 DE602005025722 D1 DE 602005025722D1 DE 602005025722 T DE602005025722 T DE 602005025722T DE 602005025722 T DE602005025722 T DE 602005025722T DE 602005025722 D1 DE602005025722 D1 DE 602005025722D1
Authority
DE
Germany
Prior art keywords
insulator
objects
processing method
surface part
processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005025722T
Other languages
English (en)
Inventor
Kojiro Kameyama
Akira Suzuki
Yoshio Okayama
Mitsuo Umemoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanto Sanyo Semiconductors Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Kanto Sanyo Semiconductors Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanto Sanyo Semiconductors Co Ltd, Sanyo Electric Co Ltd filed Critical Kanto Sanyo Semiconductors Co Ltd
Publication of DE602005025722D1 publication Critical patent/DE602005025722D1/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
DE602005025722T 2004-11-30 2005-11-30 Verarbeitungsverfahren für Objekte mit einem Oberflächenteil aus einem Isolator Active DE602005025722D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004345275 2004-11-30

Publications (1)

Publication Number Publication Date
DE602005025722D1 true DE602005025722D1 (de) 2011-02-17

Family

ID=35559482

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005025722T Active DE602005025722D1 (de) 2004-11-30 2005-11-30 Verarbeitungsverfahren für Objekte mit einem Oberflächenteil aus einem Isolator

Country Status (6)

Country Link
US (1) US7495881B2 (de)
EP (1) EP1662559B1 (de)
KR (1) KR100731244B1 (de)
CN (1) CN1790889B (de)
DE (1) DE602005025722D1 (de)
TW (1) TWI271815B (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102006013516A1 (de) * 2006-03-23 2007-10-25 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur elektrostatischen Fixierung von Substraten mit leitfähiger Schicht
DE102006013517A1 (de) 2006-03-23 2007-09-27 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur elektrostatischen Fixierung von Substraten mit polarisierbaren Molekülen
JP2010210590A (ja) * 2009-03-12 2010-09-24 Fujifilm Corp 放射線検出器
EP2602816A1 (de) * 2010-08-06 2013-06-12 Asahi Glass Company, Limited Trägersubstrat
US9030797B2 (en) * 2012-06-01 2015-05-12 Infineon Technologies Ag Thin substrate electrostatic chuck system and method
JP6149786B2 (ja) * 2014-04-11 2017-06-21 豊田合成株式会社 半導体装置および半導体装置の製造方法
CN107958866B (zh) * 2015-11-20 2021-09-14 苏州赛森电子科技有限公司 蒸发镀膜工艺中的圆片固定装置
US20180025931A1 (en) * 2016-07-22 2018-01-25 Applied Materials, Inc. Processed wafer as top plate of a workpiece carrier in semiconductor and mechanical processing
CN106910703B (zh) * 2017-03-10 2020-12-01 京东方科技集团股份有限公司 载台及其制备方法、加工装置及其操作方法
CN108231655B (zh) * 2018-01-12 2020-06-16 上海华虹宏力半导体制造有限公司 静电吸附基底的方法
JP6583897B1 (ja) * 2018-05-25 2019-10-02 ▲らん▼海精研股▲ふん▼有限公司 セラミック製静電チャックの製造方法
CN109738481A (zh) * 2018-11-27 2019-05-10 武汉嘉仪通科技有限公司 一种薄膜材料的赛贝克系数测量装置及方法
US12101920B2 (en) * 2022-04-14 2024-09-24 Entegris, Inc. Conductive polymeric layers for charge dissipation

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0618083B2 (ja) 1985-11-05 1994-03-09 アキレス株式会社 導電性複合体の製造方法
JPH0563062A (ja) 1991-08-30 1993-03-12 Toto Ltd 静電チヤツク
JPH05331431A (ja) 1992-05-28 1993-12-14 Achilles Corp 導電性透明保護フィルム
US5838529A (en) 1995-12-22 1998-11-17 Lam Research Corporation Low voltage electrostatic clamp for substrates such as dielectric substrates
JP3625003B2 (ja) 1997-01-20 2005-03-02 シャープ株式会社 液晶表示基板
JP3805134B2 (ja) 1999-05-25 2006-08-02 東陶機器株式会社 絶縁性基板吸着用静電チャック
JP2002305234A (ja) 2001-04-05 2002-10-18 Matsushita Electric Ind Co Ltd シリコンウェハ裏面のエッチング方法およびシリコンウェハの保護テープ
US6693790B2 (en) * 2001-04-12 2004-02-17 Komatsu, Ltd. Static electricity chuck apparatus and semiconductor producing apparatus provided with the static electricity chuck apparatus
JP2003224180A (ja) * 2002-01-28 2003-08-08 Kyocera Corp ウエハ支持部材
US7102726B2 (en) * 2002-03-15 2006-09-05 Lg. Philips Lcd Co., Ltd. System for fabricating liquid crystal display and method of fabricating liquid crystal display using the same
EP1359466A1 (de) * 2002-05-01 2003-11-05 ASML Netherlands B.V. Halter, lithographischer Projektionsapparat, Verfahren zur Herstellung eines Halters und Verfahren zur Herstellung einer Vorrichtung
US7092231B2 (en) * 2002-08-23 2006-08-15 Asml Netherlands B.V. Chuck, lithographic apparatus and device manufacturing method
JP2004140056A (ja) * 2002-10-16 2004-05-13 Nok Corp 静電チャック
JP4130167B2 (ja) * 2003-10-06 2008-08-06 日東電工株式会社 半導体ウエハの剥離方法

Also Published As

Publication number Publication date
TW200620528A (en) 2006-06-16
EP1662559A3 (de) 2007-12-19
KR100731244B1 (ko) 2007-06-22
TWI271815B (en) 2007-01-21
CN1790889A (zh) 2006-06-21
EP1662559A2 (de) 2006-05-31
CN1790889B (zh) 2010-12-08
US7495881B2 (en) 2009-02-24
US20060120010A1 (en) 2006-06-08
EP1662559B1 (de) 2011-01-05
KR20060060600A (ko) 2006-06-05

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