DE602005004965D1 - Magnetische Speicherzelle und Methode zu Herstellung derselben - Google Patents
Magnetische Speicherzelle und Methode zu Herstellung derselbenInfo
- Publication number
- DE602005004965D1 DE602005004965D1 DE602005004965T DE602005004965T DE602005004965D1 DE 602005004965 D1 DE602005004965 D1 DE 602005004965D1 DE 602005004965 T DE602005004965 T DE 602005004965T DE 602005004965 T DE602005004965 T DE 602005004965T DE 602005004965 D1 DE602005004965 D1 DE 602005004965D1
- Authority
- DE
- Germany
- Prior art keywords
- memory cell
- magnetic memory
- making same
- making
- same
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004260160A JP4569231B2 (ja) | 2004-09-07 | 2004-09-07 | 磁気メモリ及びその製造方法 |
JP2004260160 | 2004-09-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE602005004965D1 true DE602005004965D1 (de) | 2008-04-10 |
DE602005004965T2 DE602005004965T2 (de) | 2009-03-12 |
Family
ID=35447875
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE602005004965T Expired - Fee Related DE602005004965T2 (de) | 2004-09-07 | 2005-09-07 | Magnetische Speicherzelle und Methode zu Herstellung derselben |
Country Status (5)
Country | Link |
---|---|
US (1) | US7470964B2 (de) |
EP (1) | EP1632951B1 (de) |
JP (1) | JP4569231B2 (de) |
CN (1) | CN1758371A (de) |
DE (1) | DE602005004965T2 (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008126166A1 (ja) * | 2007-03-09 | 2008-10-23 | Fujitsu Limited | 不揮発性半導体記憶装置及びその読み出し方法 |
US7813210B2 (en) * | 2007-08-16 | 2010-10-12 | Unity Semiconductor Corporation | Multiple-type memory |
US8494430B2 (en) * | 2009-09-10 | 2013-07-23 | Xerox Corporation | Apparatus and method for the registration and de-skew of substrate media |
JP5551129B2 (ja) * | 2011-09-07 | 2014-07-16 | 株式会社東芝 | 記憶装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5679982A (en) * | 1993-02-24 | 1997-10-21 | Intel Corporation | Barrier against metal diffusion |
DE10020128A1 (de) | 2000-04-14 | 2001-10-18 | Infineon Technologies Ag | MRAM-Speicher |
JP4309075B2 (ja) | 2000-07-27 | 2009-08-05 | 株式会社東芝 | 磁気記憶装置 |
US6487110B2 (en) * | 2000-09-27 | 2002-11-26 | Canon Kabushiki Kaisha | Nonvolatile solid-state memory device using magnetoresistive effect and recording and reproducing method of the same |
JP2002368196A (ja) * | 2001-05-30 | 2002-12-20 | Internatl Business Mach Corp <Ibm> | メモリセル、記憶回路ブロック、データの書き込み方法及びデータの読み出し方法 |
JP3898556B2 (ja) * | 2002-04-22 | 2007-03-28 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP3906139B2 (ja) * | 2002-10-16 | 2007-04-18 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
JP2004153181A (ja) * | 2002-10-31 | 2004-05-27 | Toshiba Corp | 磁気抵抗効果素子および磁気メモリ |
JP3980990B2 (ja) | 2002-10-31 | 2007-09-26 | 株式会社東芝 | 磁気メモリ |
JP3906145B2 (ja) | 2002-11-22 | 2007-04-18 | 株式会社東芝 | 磁気ランダムアクセスメモリ |
-
2004
- 2004-09-07 JP JP2004260160A patent/JP4569231B2/ja not_active Expired - Fee Related
-
2005
- 2005-09-06 US US11/218,490 patent/US7470964B2/en not_active Expired - Fee Related
- 2005-09-07 EP EP05019439A patent/EP1632951B1/de not_active Ceased
- 2005-09-07 CN CNA2005100987743A patent/CN1758371A/zh active Pending
- 2005-09-07 DE DE602005004965T patent/DE602005004965T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE602005004965T2 (de) | 2009-03-12 |
CN1758371A (zh) | 2006-04-12 |
EP1632951B1 (de) | 2008-02-27 |
EP1632951A1 (de) | 2006-03-08 |
US7470964B2 (en) | 2008-12-30 |
JP4569231B2 (ja) | 2010-10-27 |
US20060056232A1 (en) | 2006-03-16 |
JP2006080164A (ja) | 2006-03-23 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |