DE602005003232D1 - Zugriff auf phasenänderungsspeicher - Google Patents

Zugriff auf phasenänderungsspeicher

Info

Publication number
DE602005003232D1
DE602005003232D1 DE602005003232T DE602005003232T DE602005003232D1 DE 602005003232 D1 DE602005003232 D1 DE 602005003232D1 DE 602005003232 T DE602005003232 T DE 602005003232T DE 602005003232 T DE602005003232 T DE 602005003232T DE 602005003232 D1 DE602005003232 D1 DE 602005003232D1
Authority
DE
Germany
Prior art keywords
selection device
threshold voltage
selection
phase change
change memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
DE602005003232T
Other languages
English (en)
Other versions
DE602005003232T2 (de
Inventor
Ward Parkinson
Charles Dennison
Stephen Hudgens
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of DE602005003232D1 publication Critical patent/DE602005003232D1/de
Application granted granted Critical
Publication of DE602005003232T2 publication Critical patent/DE602005003232T2/de
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/003—Cell access
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/74—Array wherein each memory cell has more than one access device
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/76—Array using an access device for each cell which being not a transistor and not a diode
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
DE602005003232T 2004-06-30 2005-06-24 Zugriff auf phasenänderungsspeicher Active DE602005003232T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US882860 1992-05-14
US10/882,860 US6990017B1 (en) 2004-06-30 2004-06-30 Accessing phase change memories
PCT/US2005/022772 WO2006004677A1 (en) 2004-06-30 2005-06-24 Accessing phase change memories

Publications (2)

Publication Number Publication Date
DE602005003232D1 true DE602005003232D1 (de) 2007-12-20
DE602005003232T2 DE602005003232T2 (de) 2008-08-28

Family

ID=35160099

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602005003232T Active DE602005003232T2 (de) 2004-06-30 2005-06-24 Zugriff auf phasenänderungsspeicher

Country Status (8)

Country Link
US (1) US6990017B1 (de)
EP (1) EP1771861B1 (de)
KR (1) KR100851843B1 (de)
CN (1) CN100492540C (de)
AT (1) ATE377830T1 (de)
DE (1) DE602005003232T2 (de)
TW (1) TWI283407B (de)
WO (1) WO2006004677A1 (de)

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EP1624459A1 (de) * 2004-08-03 2006-02-08 STMicroelectronics S.r.l. Nichtflüchtige Phasenwechselspeicheranordnung und Verfahren zu deren Vorspannung
TWI260764B (en) * 2004-12-10 2006-08-21 Macronix Int Co Ltd Non-volatile memory cell and operating method thereof
US7381981B2 (en) * 2005-07-29 2008-06-03 International Business Machines Corporation Phase-change TaN resistor based triple-state/multi-state read only memory
US20070227878A1 (en) * 2006-03-29 2007-10-04 Roger Hamamjy Forming ovonic threshold switches with reduced deposition chamber gas pressure
US7663900B2 (en) * 2007-12-31 2010-02-16 Hitachi Global Storage Technologies Netherlands B.V. Tree-structure memory device
US8223580B2 (en) * 2008-06-17 2012-07-17 Ovonyx, Inc. Method and apparatus for decoding memory
US7944728B2 (en) * 2008-12-19 2011-05-17 Sandisk 3D Llc Programming a memory cell with a diode in series by applying reverse bias
US8014185B2 (en) * 2008-07-09 2011-09-06 Sandisk 3D Llc Multiple series passive element matrix cell for three-dimensional arrays
US7733685B2 (en) * 2008-07-09 2010-06-08 Sandisk 3D Llc Cross point memory cell with distributed diodes and method of making same
JP5127661B2 (ja) * 2008-10-10 2013-01-23 株式会社東芝 半導体記憶装置
US7923812B2 (en) * 2008-12-19 2011-04-12 Sandisk 3D Llc Quad memory cell and method of making same
US7910407B2 (en) * 2008-12-19 2011-03-22 Sandisk 3D Llc Quad memory cell and method of making same
WO2011064801A1 (en) 2009-11-30 2011-06-03 Andrea Redaelli Memory including a low thermal budget selector switch on a variable resistance memory cell
US8384429B2 (en) 2010-04-16 2013-02-26 Infineon Technologies Ag Integrated circuit and method for manufacturing same
CN102231283A (zh) * 2011-04-07 2011-11-02 清华大学 一种不挥发存储器的无线接口
US8767482B2 (en) 2011-08-18 2014-07-01 Micron Technology, Inc. Apparatuses, devices and methods for sensing a snapback event in a circuit
US8675423B2 (en) 2012-05-07 2014-03-18 Micron Technology, Inc. Apparatuses and methods including supply current in memory
US9245926B2 (en) * 2012-05-07 2016-01-26 Micron Technology, Inc. Apparatuses and methods including memory access in cross point memory
US9153777B2 (en) * 2013-06-03 2015-10-06 Micron Technology, Inc. Thermally optimized phase change memory cells and methods of fabricating the same
US9425237B2 (en) 2014-03-11 2016-08-23 Crossbar, Inc. Selector device for two-terminal memory
US20160005965A1 (en) * 2014-07-01 2016-01-07 Micron Technology, Inc. Memory cells having a first selecting chalcogenide material and a second selecting chalcogenide material and methods therof
US10211397B1 (en) 2014-07-07 2019-02-19 Crossbar, Inc. Threshold voltage tuning for a volatile selection device
US9633724B2 (en) 2014-07-07 2017-04-25 Crossbar, Inc. Sensing a non-volatile memory device utilizing selector device holding characteristics
US10115819B2 (en) 2015-05-29 2018-10-30 Crossbar, Inc. Recessed high voltage metal oxide semiconductor transistor for RRAM cell
US9460788B2 (en) 2014-07-09 2016-10-04 Crossbar, Inc. Non-volatile memory cell utilizing volatile switching two terminal device and a MOS transistor
WO2016158429A1 (ja) * 2015-03-31 2016-10-06 ソニーセミコンダクタソリューションズ株式会社 スイッチ素子および記憶装置
US9406881B1 (en) 2015-04-24 2016-08-02 Micron Technology, Inc. Memory cells having a heater electrode formed between a first storage material and a second storage material and methods of forming the same
US10192616B2 (en) * 2016-06-28 2019-01-29 Western Digital Technologies, Inc. Ovonic threshold switch (OTS) driver/selector uses unselect bias to pre-charge memory chip circuit and reduces unacceptable false selects
KR102594412B1 (ko) * 2016-08-03 2023-10-30 삼성전자주식회사 임계 스위칭 소자를 갖는 반도체 소자 형성 방법
US10096362B1 (en) 2017-03-24 2018-10-09 Crossbar, Inc. Switching block configuration bit comprising a non-volatile memory cell
KR102295524B1 (ko) 2017-03-27 2021-08-30 삼성전자 주식회사 메모리 소자
WO2019066854A1 (en) * 2017-09-28 2019-04-04 Intel Corporation DYNAMIC HEAVY MEMORY INCLUDING A THRESHOLD SWITCH
US10403359B2 (en) * 2017-12-20 2019-09-03 Micron Technology, Inc. Non-contact electron beam probing techniques and related structures
US10381101B2 (en) * 2017-12-20 2019-08-13 Micron Technology, Inc. Non-contact measurement of memory cell threshold voltage
JP2019169219A (ja) * 2018-03-23 2019-10-03 東芝メモリ株式会社 半導体記憶装置
US10374009B1 (en) * 2018-07-17 2019-08-06 Macronix International Co., Ltd. Te-free AsSeGe chalcogenides for selector devices and memory devices using same
KR102144537B1 (ko) * 2018-11-08 2020-08-12 한양대학교 산학협력단 Ots의 스냅 백 현상을 개선하는 회로 소자 및 이를 포함하는 상변화 메모리 소자
FR3095894B1 (fr) * 2019-05-10 2022-05-20 Commissariat Energie Atomique Sélecteur de mémoire
US11139025B2 (en) 2020-01-22 2021-10-05 International Business Machines Corporation Multi-level cell threshold voltage operation of one-selector-one-resistor structure included in a crossbar array
US11818899B2 (en) * 2020-11-03 2023-11-14 Samsung Electronics Co., Ltd. Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same

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US5414271A (en) * 1991-01-18 1995-05-09 Energy Conversion Devices, Inc. Electrically erasable memory elements having improved set resistance stability
US6275411B1 (en) * 1993-07-23 2001-08-14 Nonvolatile Electronics, Incorporated Spin dependent tunneling memory
KR100270147B1 (ko) * 1996-03-01 2000-10-16 니시무로 타이죠 액정표시장치
US6147900A (en) * 1997-11-06 2000-11-14 Nonvolatile Electronics, Incorporated Spin dependent tunneling memory
US6534781B2 (en) * 2000-12-26 2003-03-18 Ovonyx, Inc. Phase-change memory bipolar array utilizing a single shallow trench isolation for creating an individual active area region for two memory array elements and one bipolar base contact
US6579760B1 (en) * 2002-03-28 2003-06-17 Macronix International Co., Ltd. Self-aligned, programmable phase change memory
AU2003201760A1 (en) * 2002-04-04 2003-10-20 Kabushiki Kaisha Toshiba Phase-change memory device
WO2004040582A1 (ja) * 2002-11-01 2004-05-13 Matsushita Electric Industrial Co., Ltd. 抵抗変化素子を用いた不揮発性フリップフロップ回路の駆動方法
US6795338B2 (en) * 2002-12-13 2004-09-21 Intel Corporation Memory having access devices using phase change material such as chalcogenide

Also Published As

Publication number Publication date
US20060002173A1 (en) 2006-01-05
US6990017B1 (en) 2006-01-24
WO2006004677A1 (en) 2006-01-12
DE602005003232T2 (de) 2008-08-28
ATE377830T1 (de) 2007-11-15
TWI283407B (en) 2007-07-01
CN100492540C (zh) 2009-05-27
KR100851843B1 (ko) 2008-08-13
KR20070024672A (ko) 2007-03-02
EP1771861B1 (de) 2007-11-07
EP1771861A1 (de) 2007-04-11
TW200617968A (en) 2006-06-01
CN1961378A (zh) 2007-05-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: HEYER, V., DIPL.-PHYS. DR.RER.NAT., PAT.-ANW., 806