FR3095894B1 - Sélecteur de mémoire - Google Patents
Sélecteur de mémoire Download PDFInfo
- Publication number
- FR3095894B1 FR3095894B1 FR1904900A FR1904900A FR3095894B1 FR 3095894 B1 FR3095894 B1 FR 3095894B1 FR 1904900 A FR1904900 A FR 1904900A FR 1904900 A FR1904900 A FR 1904900A FR 3095894 B1 FR3095894 B1 FR 3095894B1
- Authority
- FR
- France
- Prior art keywords
- selector
- memory selector
- memory cell
- memory
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
- H10B63/24—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes of the Ovonic threshold switching type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/021—Formation of switching materials, e.g. deposition of layers
- H10N70/026—Formation of switching materials, e.g. deposition of layers by physical vapor deposition, e.g. sputtering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8825—Selenides, e.g. GeSe
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
- H10B63/84—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays arranged in a direction perpendicular to the substrate, e.g. 3D cell arrays
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Static Random-Access Memory (AREA)
Abstract
Sélecteur de mémoire La présente description concerne un sélecteur (33) pour cellule mémoire (3), destiné à passer d’un état résistif à un état conducteur de manière à respectivement interdire ou autoriser un accès à la cellule mémoire, caractérisé en ce qu’il est constitué d’un alliage constitué de germanium, de sélénium, d’arsenic et de tellure. Figure pour l'abrégé : Fig. 1
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1904900A FR3095894B1 (fr) | 2019-05-10 | 2019-05-10 | Sélecteur de mémoire |
CN202080049852.3A CN114072929A (zh) | 2019-05-10 | 2020-05-04 | 存储器选择器 |
US17/609,862 US20220231225A1 (en) | 2019-05-10 | 2020-05-04 | Memory selector |
EP20731925.2A EP3966874A1 (fr) | 2019-05-10 | 2020-05-04 | Selecteur de memoire |
PCT/FR2020/050741 WO2020229752A1 (fr) | 2019-05-10 | 2020-05-04 | Selecteur de memoire |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR1904900A FR3095894B1 (fr) | 2019-05-10 | 2019-05-10 | Sélecteur de mémoire |
FR1904900 | 2019-05-10 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR3095894A1 FR3095894A1 (fr) | 2020-11-13 |
FR3095894B1 true FR3095894B1 (fr) | 2022-05-20 |
Family
ID=68138288
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1904900A Active FR3095894B1 (fr) | 2019-05-10 | 2019-05-10 | Sélecteur de mémoire |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220231225A1 (fr) |
EP (1) | EP3966874A1 (fr) |
CN (1) | CN114072929A (fr) |
FR (1) | FR3095894B1 (fr) |
WO (1) | WO2020229752A1 (fr) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5694146A (en) * | 1994-10-14 | 1997-12-02 | Energy Conversion Devices, Inc. | Active matrix LCD array employing thin film chalcogenide threshold switches to isolate individual pixels |
US6990017B1 (en) * | 2004-06-30 | 2006-01-24 | Intel Corporation | Accessing phase change memories |
KR101338160B1 (ko) * | 2007-07-06 | 2013-12-06 | 삼성전자주식회사 | 상변화 기억 소자 및 그 형성 방법 |
KR102403733B1 (ko) * | 2017-12-01 | 2022-05-30 | 삼성전자주식회사 | 메모리 소자 |
JP2019161179A (ja) * | 2018-03-16 | 2019-09-19 | 東芝メモリ株式会社 | 磁気記憶装置 |
KR20200039072A (ko) * | 2018-10-04 | 2020-04-16 | 삼성전자주식회사 | 가변 저항 메모리 소자 및 이의 제조 방법 |
-
2019
- 2019-05-10 FR FR1904900A patent/FR3095894B1/fr active Active
-
2020
- 2020-05-04 CN CN202080049852.3A patent/CN114072929A/zh active Pending
- 2020-05-04 US US17/609,862 patent/US20220231225A1/en active Pending
- 2020-05-04 EP EP20731925.2A patent/EP3966874A1/fr active Pending
- 2020-05-04 WO PCT/FR2020/050741 patent/WO2020229752A1/fr unknown
Also Published As
Publication number | Publication date |
---|---|
US20220231225A1 (en) | 2022-07-21 |
FR3095894A1 (fr) | 2020-11-13 |
CN114072929A (zh) | 2022-02-18 |
WO2020229752A1 (fr) | 2020-11-19 |
EP3966874A1 (fr) | 2022-03-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107093096B (zh) | 一种业务量预测方法及装置 | |
Retana-Montenegro et al. | Analytical properties of Einasto dark matter haloes | |
KR102316230B1 (ko) | 이미지 처리 방법 및 장치 | |
CN110852503B (zh) | 一种支付渠道的选择方法和设备、支付渠道路由 | |
JP2017525069A (ja) | データキャプチャのためのダイナミックコントロール | |
CN111080477A (zh) | 一种家庭电力负荷预测方法及系统 | |
FR3095894B1 (fr) | Sélecteur de mémoire | |
CN108519997A (zh) | 相关内容的推荐方法及装置 | |
CN111242106A (zh) | 一种面部图像的采集方法、装置、设备及面部识别设备 | |
CN113434772B (zh) | 推荐处理方法及装置 | |
CN110009490A (zh) | 异常金融交易群体识别方法及装置 | |
CN117409466B (zh) | 一种基于多标签控制的三维动态表情生成方法及装置 | |
US9451155B2 (en) | Depth-segmenting peak tracking autofocus | |
JP2015036901A (ja) | 部品選定プログラム、部品選定装置及び部品選定方法 | |
CN109614609B (zh) | 模型建立方法及装置 | |
Schombert et al. | Metallicity gradients in early-type galaxies | |
US20150145988A1 (en) | Image processing apparatus, imaging apparatus, and image processing method | |
CN117953258A (zh) | 对象分类模型的训练方法、对象分类方法及装置 | |
ES2796345T3 (es) | Búsqueda de conjunto de datos electrónicos | |
FR3084961B1 (fr) | Dispositif memoire | |
CN111008864B (zh) | 一种营销码与商户之间的铺设关系的确定方法、装置及电子设备 | |
CN107679547A (zh) | 一种针对二分类模型的数据处理方法、装置以及电子设备 | |
CN116109008B (zh) | 一种业务执行的方法、装置、存储介质及电子设备 | |
US20150178042A1 (en) | Anonymously tailoring environments to the preferences of physically proximate users | |
JP4554963B2 (ja) | 視差センサ及び視差画像の生成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PLFP | Fee payment |
Year of fee payment: 2 |
|
PLSC | Publication of the preliminary search report |
Effective date: 20201113 |
|
PLFP | Fee payment |
Year of fee payment: 3 |
|
PLFP | Fee payment |
Year of fee payment: 4 |
|
PLFP | Fee payment |
Year of fee payment: 5 |
|
PLFP | Fee payment |
Year of fee payment: 6 |