DE602004027158D1 - Mehrkanalige, völlig verarmte quantenmulden-cmosfets mit niedriger stromaufnahme - Google Patents
Mehrkanalige, völlig verarmte quantenmulden-cmosfets mit niedriger stromaufnahmeInfo
- Publication number
- DE602004027158D1 DE602004027158D1 DE602004027158T DE602004027158T DE602004027158D1 DE 602004027158 D1 DE602004027158 D1 DE 602004027158D1 DE 602004027158 T DE602004027158 T DE 602004027158T DE 602004027158 T DE602004027158 T DE 602004027158T DE 602004027158 D1 DE602004027158 D1 DE 602004027158D1
- Authority
- DE
- Germany
- Prior art keywords
- cmmsfets
- channel
- power consumption
- low power
- fully reduced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- VLCQZHSMCYCDJL-UHFFFAOYSA-N tribenuron methyl Chemical compound COC(=O)C1=CC=CC=C1S(=O)(=O)NC(=O)N(C)C1=NC(C)=NC(OC)=N1 VLCQZHSMCYCDJL-UHFFFAOYSA-N 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
- H10D30/6727—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having source or drain regions connected to bulk conducting substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
- H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
- H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
- H10D84/85—Complementary IGFETs, e.g. CMOS
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US10/706,948 US7074657B2 (en) | 2003-11-14 | 2003-11-14 | Low-power multiple-channel fully depleted quantum well CMOSFETs |
| PCT/US2004/033413 WO2005053035A1 (en) | 2003-11-14 | 2004-10-08 | Low-power multiple-channel fully depleted quantum well cmosfets |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE602004027158D1 true DE602004027158D1 (de) | 2010-06-24 |
Family
ID=34573412
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE602004027158T Expired - Lifetime DE602004027158D1 (de) | 2003-11-14 | 2004-10-08 | Mehrkanalige, völlig verarmte quantenmulden-cmosfets mit niedriger stromaufnahme |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US7074657B2 (https=) |
| EP (1) | EP1695389B1 (https=) |
| JP (1) | JP2007511907A (https=) |
| KR (1) | KR20060108672A (https=) |
| CN (1) | CN100452437C (https=) |
| DE (1) | DE602004027158D1 (https=) |
| TW (1) | TWI360225B (https=) |
| WO (1) | WO2005053035A1 (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7224007B1 (en) * | 2004-01-12 | 2007-05-29 | Advanced Micro Devices, Inc. | Multi-channel transistor with tunable hot carrier effect |
| KR100549014B1 (ko) * | 2004-07-21 | 2006-02-02 | 삼성전자주식회사 | 스페이서 패턴을 갖는 반도체 장치들 및 그 형성방법들 |
| US7544572B2 (en) * | 2005-11-30 | 2009-06-09 | Advanced Micro Devices, Inc. | Multi-operational mode transistor with multiple-channel device structure |
| CN102074585B (zh) * | 2010-10-22 | 2012-07-04 | 友达光电股份有限公司 | 薄膜晶体管与显示面板 |
| JP6401977B2 (ja) * | 2013-09-06 | 2018-10-10 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| CN103872139B (zh) * | 2014-02-24 | 2016-09-07 | 北京京东方光电科技有限公司 | 薄膜晶体管及其制作方法、阵列基板和显示装置 |
| US9653287B2 (en) * | 2014-10-30 | 2017-05-16 | Samsung Electronics Co., Ltd. | S/D connection to individual channel layers in a nanosheet FET |
| US9590038B1 (en) | 2015-10-23 | 2017-03-07 | Samsung Electronics Co., Ltd. | Semiconductor device having nanowire channel |
| US9899387B2 (en) * | 2015-11-16 | 2018-02-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multi-gate device and method of fabrication thereof |
| KR102343470B1 (ko) | 2016-01-28 | 2021-12-24 | 삼성전자주식회사 | 반도체 장치 및 이의 제조 방법 |
| KR102250003B1 (ko) * | 2017-10-18 | 2021-05-11 | 한양대학교 산학협력단 | 막, 멀티레벨 소자, 멀티레벨 소자의 제조방법, 멀티레벨 소자의 구동방법 |
| KR102814839B1 (ko) * | 2019-06-11 | 2025-05-30 | 삼성전자주식회사 | 반도체 소자 |
| CN112151616B (zh) * | 2020-08-20 | 2022-12-16 | 中国科学院微电子研究所 | 一种堆叠mos器件及其制备方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5153688A (en) * | 1990-04-21 | 1992-10-06 | Canon Kabushiki Kaisha | Method and device for controlling interference of electron waves by light in which a transverse magnetic wave is applied |
| JPH04179271A (ja) * | 1990-11-14 | 1992-06-25 | Fujitsu Ltd | 半導体装置及びその製造方法 |
| TW540828U (en) * | 1991-08-23 | 2003-07-01 | Semiconductor Energy Lab | Semiconductor device |
| JPH0575125A (ja) * | 1991-09-12 | 1993-03-26 | Toshiba Corp | 薄膜トランジスタ |
| FR2703855B1 (fr) * | 1993-04-05 | 1995-05-24 | Valeo Electronique | Montage à réponse linéarisée et symétrisée, oscillateur utilisant un tel montage et émetteur de télécommande utilisant un tel oscillateur. |
| JPH06310719A (ja) * | 1993-04-19 | 1994-11-04 | Sharp Corp | Ｇｅ−ＳｉのＳＯＩ型ＭＯＳトランジスタ及びその製造方法 |
| US5500545A (en) | 1995-02-27 | 1996-03-19 | United Microelectronics Corporation | Double switching field effect transistor and method of manufacturing it |
| KR100279264B1 (ko) * | 1998-12-26 | 2001-02-01 | 김영환 | 더블 게이트 구조를 갖는 에스·오·아이 트랜지스터 및 그의제조방법 |
| US6373112B1 (en) * | 1999-12-02 | 2002-04-16 | Intel Corporation | Polysilicon-germanium MOSFET gate electrodes |
| TW475268B (en) * | 2000-05-31 | 2002-02-01 | Matsushita Electric Industrial Co Ltd | Misfet |
| US6432754B1 (en) * | 2001-02-20 | 2002-08-13 | International Business Machines Corporation | Double SOI device with recess etch and epitaxy |
| JP2003092400A (ja) * | 2001-07-13 | 2003-03-28 | Seiko Epson Corp | 半導体装置及びその製造方法 |
| KR100481209B1 (ko) * | 2002-10-01 | 2005-04-08 | 삼성전자주식회사 | 다중 채널을 갖는 모스 트랜지스터 및 그 제조방법 |
| FR2853454B1 (fr) * | 2003-04-03 | 2005-07-15 | St Microelectronics Sa | Transistor mos haute densite |
| US6919250B2 (en) * | 2003-05-21 | 2005-07-19 | Advanced Micro Devices, Inc. | Multiple-gate MOS device and method for making the same |
| US6921700B2 (en) * | 2003-07-31 | 2005-07-26 | Freescale Semiconductor, Inc. | Method of forming a transistor having multiple channels |
-
2003
- 2003-11-14 US US10/706,948 patent/US7074657B2/en not_active Expired - Lifetime
-
2004
- 2004-10-08 KR KR1020067009128A patent/KR20060108672A/ko not_active Ceased
- 2004-10-08 EP EP04794688A patent/EP1695389B1/en not_active Expired - Lifetime
- 2004-10-08 JP JP2006539498A patent/JP2007511907A/ja active Pending
- 2004-10-08 CN CNB2004800333292A patent/CN100452437C/zh not_active Expired - Lifetime
- 2004-10-08 WO PCT/US2004/033413 patent/WO2005053035A1/en not_active Ceased
- 2004-10-08 DE DE602004027158T patent/DE602004027158D1/de not_active Expired - Lifetime
- 2004-10-18 TW TW093131508A patent/TWI360225B/zh not_active IP Right Cessation
-
2006
- 2006-06-02 US US11/445,345 patent/US7253484B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2007511907A (ja) | 2007-05-10 |
| EP1695389B1 (en) | 2010-05-12 |
| WO2005053035A1 (en) | 2005-06-09 |
| US20060278938A1 (en) | 2006-12-14 |
| US7253484B2 (en) | 2007-08-07 |
| EP1695389A1 (en) | 2006-08-30 |
| TWI360225B (en) | 2012-03-11 |
| CN1879224A (zh) | 2006-12-13 |
| CN100452437C (zh) | 2009-01-14 |
| TW200522356A (en) | 2005-07-01 |
| KR20060108672A (ko) | 2006-10-18 |
| US20050104140A1 (en) | 2005-05-19 |
| US7074657B2 (en) | 2006-07-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |