DE602004026063D1 - Hochdichtes finfet-integrationsverfahren - Google Patents

Hochdichtes finfet-integrationsverfahren

Info

Publication number
DE602004026063D1
DE602004026063D1 DE602004026063T DE602004026063T DE602004026063D1 DE 602004026063 D1 DE602004026063 D1 DE 602004026063D1 DE 602004026063 T DE602004026063 T DE 602004026063T DE 602004026063 T DE602004026063 T DE 602004026063T DE 602004026063 D1 DE602004026063 D1 DE 602004026063D1
Authority
DE
Germany
Prior art keywords
fin
channel region
high density
integration process
density finfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004026063T
Other languages
English (en)
Inventor
Edward J Nowak
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of DE602004026063D1 publication Critical patent/DE602004026063D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
    • H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
DE602004026063T 2003-06-25 2004-06-25 Hochdichtes finfet-integrationsverfahren Expired - Lifetime DE602004026063D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/604,077 US6894326B2 (en) 2003-06-25 2003-06-25 High-density finFET integration scheme
PCT/US2004/020553 WO2005001905A2 (en) 2003-06-25 2004-06-25 High-density finfet integration scheme

Publications (1)

Publication Number Publication Date
DE602004026063D1 true DE602004026063D1 (de) 2010-04-29

Family

ID=33539877

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004026063T Expired - Lifetime DE602004026063D1 (de) 2003-06-25 2004-06-25 Hochdichtes finfet-integrationsverfahren

Country Status (7)

Country Link
US (2) US6894326B2 (de)
EP (1) EP1644988B1 (de)
KR (1) KR100734997B1 (de)
CN (1) CN100492666C (de)
AT (1) ATE461526T1 (de)
DE (1) DE602004026063D1 (de)
WO (1) WO2005001905A2 (de)

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7253650B2 (en) 2004-05-25 2007-08-07 International Business Machines Corporation Increase productivity at wafer test using probe retest data analysis
US7183142B2 (en) * 2005-01-13 2007-02-27 International Business Machines Corporation FinFETs with long gate length at high density
US7316148B2 (en) * 2005-02-15 2008-01-08 Boston Scientific Scimed, Inc. Protective sheet loader
US7265013B2 (en) * 2005-09-19 2007-09-04 International Business Machines Corporation Sidewall image transfer (SIT) technologies
CN100449783C (zh) * 2005-11-29 2009-01-07 台湾积体电路制造股份有限公司 具有体接触窗的鳍状场效应晶体管及其制造方法
US7754560B2 (en) * 2006-01-10 2010-07-13 Freescale Semiconductor, Inc. Integrated circuit using FinFETs and having a static random access memory (SRAM)
US7723805B2 (en) * 2006-01-10 2010-05-25 Freescale Semiconductor, Inc. Electronic device including a fin-type transistor structure and a process for forming the electronic device
US7709303B2 (en) * 2006-01-10 2010-05-04 Freescale Semiconductor, Inc. Process for forming an electronic device including a fin-type structure
US7301210B2 (en) * 2006-01-12 2007-11-27 International Business Machines Corporation Method and structure to process thick and thin fins and variable fin to fin spacing
US7560798B2 (en) * 2006-02-27 2009-07-14 International Business Machines Corporation High performance tapered varactor
KR100838378B1 (ko) * 2006-09-29 2008-06-13 주식회사 하이닉스반도체 핀트랜지스터의 제조 방법
JP5525127B2 (ja) * 2007-11-12 2014-06-18 ピーエスフォー ルクスコ エスエイアールエル 半導体装置及びその製造方法
US7927938B2 (en) 2007-11-19 2011-04-19 Micron Technology, Inc. Fin-JFET
US7829951B2 (en) * 2008-11-06 2010-11-09 Qualcomm Incorporated Method of fabricating a fin field effect transistor (FinFET) device
EP2362817A4 (de) * 2008-11-25 2017-09-06 Justin V. Page Schweissgerät und schweissverfahren
US8633076B2 (en) * 2010-11-23 2014-01-21 Taiwan Semiconductor Manufacturing Company, Ltd. Method for adjusting fin width in integrated circuitry
US8513131B2 (en) 2011-03-17 2013-08-20 International Business Machines Corporation Fin field effect transistor with variable channel thickness for threshold voltage tuning
US8580692B2 (en) 2011-06-29 2013-11-12 International Business Machines Corporation Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formation
US8586482B2 (en) 2011-06-29 2013-11-19 International Business Machines Corporation Film stack including metal hardmask layer for sidewall image transfer fin field effect transistor formation
US8637930B2 (en) * 2011-10-13 2014-01-28 International Business Machines Company FinFET parasitic capacitance reduction using air gap
US8569125B2 (en) * 2011-11-30 2013-10-29 International Business Machines Corporation FinFET with improved gate planarity
US8569152B1 (en) 2012-06-04 2013-10-29 International Business Machines Corporation Cut-very-last dual-epi flow
US8697515B2 (en) 2012-06-06 2014-04-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method of making a FinFET device
US8617961B1 (en) * 2012-07-18 2013-12-31 International Business Machines Corporation Post-gate isolation area formation for fin field effect transistor device
US8741701B2 (en) 2012-08-14 2014-06-03 International Business Machines Corporation Fin structure formation including partial spacer removal
US9142548B2 (en) * 2012-09-04 2015-09-22 Qualcomm Incorporated FinFET compatible capacitor circuit
US20140167162A1 (en) 2012-12-13 2014-06-19 International Business Machines Corporation Finfet with merge-free fins
US8813016B1 (en) * 2013-01-28 2014-08-19 Taiwan Semiconductor Manufacturing Company Limited Multiple via connections using connectivity rings
US8927397B2 (en) 2013-02-07 2015-01-06 International Business Machines Corporation Diode structure and method for gate all around silicon nanowire technologies
US9190419B2 (en) 2013-02-07 2015-11-17 International Business Machines Corporation Diode structure and method for FINFET technologies
US9006087B2 (en) 2013-02-07 2015-04-14 International Business Machines Corporation Diode structure and method for wire-last nanomesh technologies
US9704880B2 (en) * 2013-11-06 2017-07-11 Taiwan Semiconductor Manufacturing Company Limited Systems and methods for a semiconductor structure having multiple semiconductor-device layers
US9224654B2 (en) 2013-11-25 2015-12-29 International Business Machines Corporation Fin capacitor employing sidewall image transfer
US9633906B2 (en) 2014-01-24 2017-04-25 International Business Machines Corporation Gate structure cut after formation of epitaxial active regions
US9252243B2 (en) 2014-02-07 2016-02-02 International Business Machines Corporation Gate structure integration scheme for fin field effect transistors
US10475886B2 (en) 2014-12-16 2019-11-12 International Business Machines Corporation Modified fin cut after epitaxial growth
US9748364B2 (en) * 2015-04-21 2017-08-29 Varian Semiconductor Equipment Associates, Inc. Method for fabricating three dimensional device
US10381465B2 (en) 2015-04-21 2019-08-13 Varian Semiconductor Equipment Associates, Inc. Method for fabricating asymmetrical three dimensional device
EP3136446A1 (de) * 2015-08-28 2017-03-01 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO Tft-vorrichtung und herstellungsverfahren
US9768272B2 (en) 2015-09-30 2017-09-19 International Business Machines Corporation Replacement gate FinFET process using a sit process to define source/drain regions, gate spacers and a gate cavity
US9530890B1 (en) 2015-11-02 2016-12-27 International Business Machines Corporation Parasitic capacitance reduction
US9966338B1 (en) * 2017-04-18 2018-05-08 Globalfoundries Inc. Pre-spacer self-aligned cut formation
US10276718B2 (en) * 2017-08-31 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. FinFET having a relaxation prevention anchor

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0214578A (ja) * 1988-07-01 1990-01-18 Fujitsu Ltd 半導体装置
US5391506A (en) * 1992-01-31 1995-02-21 Kawasaki Steel Corporation Manufacturing method for semiconductor devices with source/drain formed in substrate projection.
JPH09293793A (ja) * 1996-04-26 1997-11-11 Mitsubishi Electric Corp 薄膜トランジスタを有する半導体装置およびその製造方法
FR2799305B1 (fr) * 1999-10-05 2004-06-18 St Microelectronics Sa Procede de fabrication d'un dispositif semi-conducteur a grille enveloppante et dispositif obtenu
US6355532B1 (en) * 1999-10-06 2002-03-12 Lsi Logic Corporation Subtractive oxidation method of fabricating a short-length and vertically-oriented channel, dual-gate, CMOS FET
US6252284B1 (en) * 1999-12-09 2001-06-26 International Business Machines Corporation Planarized silicon fin device
US6483156B1 (en) * 2000-03-16 2002-11-19 International Business Machines Corporation Double planar gated SOI MOSFET structure
US20020062170A1 (en) * 2000-06-28 2002-05-23 Skunes Timothy A. Automated opto-electronic assembly machine and method
JP4044276B2 (ja) * 2000-09-28 2008-02-06 株式会社東芝 半導体装置及びその製造方法
US7163864B1 (en) * 2000-10-18 2007-01-16 International Business Machines Corporation Method of fabricating semiconductor side wall fin
US6413802B1 (en) * 2000-10-23 2002-07-02 The Regents Of The University Of California Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
US6580150B1 (en) * 2000-11-13 2003-06-17 Vram Technologies, Llc Vertical junction field effect semiconductor diodes
US6475869B1 (en) * 2001-02-26 2002-11-05 Advanced Micro Devices, Inc. Method of forming a double gate transistor having an epitaxial silicon/germanium channel region
US6458662B1 (en) * 2001-04-04 2002-10-01 Advanced Micro Devices, Inc. Method of fabricating a semiconductor device having an asymmetrical dual-gate silicon-germanium (SiGe) channel MOSFET and a device thereby formed
US6492212B1 (en) * 2001-10-05 2002-12-10 International Business Machines Corporation Variable threshold voltage double gated transistors and method of fabrication
US6433609B1 (en) * 2001-11-19 2002-08-13 International Business Machines Corporation Double-gate low power SOI active clamp network for single power supply and multiple power supply applications
US6635909B2 (en) * 2002-03-19 2003-10-21 International Business Machines Corporation Strained fin FETs structure and method
US6657252B2 (en) * 2002-03-19 2003-12-02 International Business Machines Corporation FinFET CMOS with NVRAM capability
US6995412B2 (en) * 2002-04-12 2006-02-07 International Business Machines Corporation Integrated circuit with capacitors having a fin structure
US6664582B2 (en) * 2002-04-12 2003-12-16 International Business Machines Corporation Fin memory cell and method of fabrication
US6833556B2 (en) * 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US6770516B2 (en) * 2002-09-05 2004-08-03 Taiwan Semiconductor Manufacturing Company Method of forming an N channel and P channel FINFET device on the same semiconductor substrate
US6706571B1 (en) * 2002-10-22 2004-03-16 Advanced Micro Devices, Inc. Method for forming multiple structures in a semiconductor device
US7214991B2 (en) * 2002-12-06 2007-05-08 Taiwan Semiconductor Manufacturing Co., Ltd. CMOS inverters configured using multiple-gate transistors
US6909147B2 (en) * 2003-05-05 2005-06-21 International Business Machines Corporation Multi-height FinFETS

Also Published As

Publication number Publication date
ATE461526T1 (de) 2010-04-15
US20050082578A1 (en) 2005-04-21
KR20060009015A (ko) 2006-01-27
EP1644988B1 (de) 2010-03-17
US6987289B2 (en) 2006-01-17
CN1839483A (zh) 2006-09-27
US6894326B2 (en) 2005-05-17
EP1644988A2 (de) 2006-04-12
KR100734997B1 (ko) 2007-07-04
CN100492666C (zh) 2009-05-27
US20040262698A1 (en) 2004-12-30
EP1644988A4 (de) 2007-04-11
WO2005001905A3 (en) 2006-02-23
WO2005001905A2 (en) 2005-01-06

Similar Documents

Publication Publication Date Title
ATE461526T1 (de) Hochdichtes finfet-integrationsverfahren
ATE404996T1 (de) Verfahren zur herstellung von paaren paralleler finfets
TW200511583A (en) Strained-channel fin field effect transistor (FET) with a uniform channel thickness and separate gates
DE602004015592D1 (de) Methode zur herstellung von finfets mit mehreren höhen
WO2005089440A3 (en) Multiple dielectric finfet structure and method
WO2009055173A3 (en) Floating body field-effect transistors, and methods of forming floating body field-effect transistors
DE602006008017D1 (de) Hochleistungsfähiger mosfet mit einer verspannten gate-metallsilizidschicht und herstellungsverfahren dafür
TW200715562A (en) Thin film transistor substrate and fabrication thereof
WO2006072575A3 (en) Ldmos transistor
ATE544182T1 (de) Feldeffekttransistor des fin-typs
EP1555688A3 (de) Ein FinFET mit mehrseitigem Kanal und zugehöriges Herstellungsverfahren.
TW200633137A (en) Semiconductor constructions and transistors, and methods of forming semiconductor constructions and transistors
WO2004073044A3 (en) Finfet device and method to make same
TW200507255A (en) Semiconductor device and method of fabricating the same
TW200625634A (en) Transistor with strained region and method of manufacture
ATE531081T1 (de) Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür
TW200631065A (en) Strained transistor with hybrid-strain inducing layer
TW200746425A (en) Semiconductor transistors with expanded top portions of gates
TWI268557B (en) Semiconductor device, accumulation mode multiple-gate transistor and methods of fabricating the same
WO2005053032A3 (en) Trench insulated gate field effect transistor
TW200620479A (en) MOSFET device with localized stressor
ATE534140T1 (de) Finfet-basierte nichtflüchtige speichervorrichtung
TW200705628A (en) Thermal dissipation structures for finfets
WO2007110507A3 (fr) Procede de realisation d'un transistor a effet de champ a grilles auto-alignees
WO2009031076A3 (en) A transistor and a method of manufacturing the same

Legal Events

Date Code Title Description
8320 Willingness to grant licences declared (paragraph 23)
8364 No opposition during term of opposition