ATE531081T1 - Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür - Google Patents

Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür

Info

Publication number
ATE531081T1
ATE531081T1 AT05730396T AT05730396T ATE531081T1 AT E531081 T1 ATE531081 T1 AT E531081T1 AT 05730396 T AT05730396 T AT 05730396T AT 05730396 T AT05730396 T AT 05730396T AT E531081 T1 ATE531081 T1 AT E531081T1
Authority
AT
Austria
Prior art keywords
group iii
nitride
layer
nirtride
production process
Prior art date
Application number
AT05730396T
Other languages
English (en)
Inventor
Adam Saxler
Scott Sheppard
Richard Smith
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of ATE531081T1 publication Critical patent/ATE531081T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
AT05730396T 2004-07-26 2005-03-30 Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür ATE531081T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/899,215 US20060017064A1 (en) 2004-07-26 2004-07-26 Nitride-based transistors having laterally grown active region and methods of fabricating same
PCT/US2005/010869 WO2006022872A1 (en) 2004-07-26 2005-03-30 Nitride-based transistors having laterally grown active region and methods of fabricating same

Publications (1)

Publication Number Publication Date
ATE531081T1 true ATE531081T1 (de) 2011-11-15

Family

ID=34964204

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05730396T ATE531081T1 (de) 2004-07-26 2005-03-30 Transistoren auf nirtridbasis mit seitlich aufgewachsener aktivregion und herstellungsverfahren dafür

Country Status (6)

Country Link
US (2) US20060017064A1 (de)
EP (1) EP1779437B1 (de)
JP (1) JP2008507853A (de)
AT (1) ATE531081T1 (de)
TW (1) TW200605349A (de)
WO (1) WO2006022872A1 (de)

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Also Published As

Publication number Publication date
US20100012952A1 (en) 2010-01-21
TW200605349A (en) 2006-02-01
JP2008507853A (ja) 2008-03-13
WO2006022872A1 (en) 2006-03-02
EP1779437A1 (de) 2007-05-02
US8946777B2 (en) 2015-02-03
US20060017064A1 (en) 2006-01-26
EP1779437B1 (de) 2011-10-26

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