DE602004015181D1 - Verfahren zur Herstellung einer Festkörperbildaufnahmevorrichtung - Google Patents

Verfahren zur Herstellung einer Festkörperbildaufnahmevorrichtung

Info

Publication number
DE602004015181D1
DE602004015181D1 DE602004015181T DE602004015181T DE602004015181D1 DE 602004015181 D1 DE602004015181 D1 DE 602004015181D1 DE 602004015181 T DE602004015181 T DE 602004015181T DE 602004015181 T DE602004015181 T DE 602004015181T DE 602004015181 D1 DE602004015181 D1 DE 602004015181D1
Authority
DE
Germany
Prior art keywords
producing
image pickup
solid state
pickup device
state image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE602004015181T
Other languages
English (en)
Inventor
Kosuke Takasaki
Kazuhiro Nishida
Kiyofumi Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
Original Assignee
Fujifilm Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Publication of DE602004015181D1 publication Critical patent/DE602004015181D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14618—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/162—Disposition
    • H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Dicing (AREA)
  • Facsimile Heads (AREA)
DE602004015181T 2003-03-25 2004-03-19 Verfahren zur Herstellung einer Festkörperbildaufnahmevorrichtung Expired - Lifetime DE602004015181D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003083446 2003-03-25
JP2003320271A JP2004312666A (ja) 2003-03-25 2003-09-11 固体撮像装置及び固体撮像装置の製造方法

Publications (1)

Publication Number Publication Date
DE602004015181D1 true DE602004015181D1 (de) 2008-09-04

Family

ID=32829038

Family Applications (1)

Application Number Title Priority Date Filing Date
DE602004015181T Expired - Lifetime DE602004015181D1 (de) 2003-03-25 2004-03-19 Verfahren zur Herstellung einer Festkörperbildaufnahmevorrichtung

Country Status (5)

Country Link
US (3) US7651881B2 (de)
EP (1) EP1463120B1 (de)
JP (1) JP2004312666A (de)
CN (1) CN1294634C (de)
DE (1) DE602004015181D1 (de)

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JP4476764B2 (ja) * 2004-03-26 2010-06-09 富士フイルム株式会社 基板接合装置及び方法
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EP2573814B1 (de) * 2006-09-28 2015-03-11 Fujifilm Corporation Halbleiter-Bildsensor
JP5272300B2 (ja) * 2006-11-14 2013-08-28 凸版印刷株式会社 固体撮像素子の製造方法
US20100060757A1 (en) * 2006-12-11 2010-03-11 Fujifilm Corporation Solid-state image pickup device
US7993977B2 (en) 2007-07-02 2011-08-09 Micron Technology, Inc. Method of forming molded standoff structures on integrated circuit devices
JP5515223B2 (ja) * 2008-02-12 2014-06-11 ソニー株式会社 半導体装置
JP5175620B2 (ja) * 2008-05-29 2013-04-03 シャープ株式会社 電子素子ウェハモジュールおよびその製造方法、電子素子モジュール、電子情報機器
US20100083998A1 (en) * 2008-10-06 2010-04-08 Emcore Corporation Solar Cell Receiver with a Glass Lid
US8125042B2 (en) * 2008-11-13 2012-02-28 Samsung Electronics Co., Ltd. Semiconductor package and method of manufacturing the same
EP2264765A1 (de) * 2009-06-19 2010-12-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Gehäuse für eine Infrarot-Mikrovorrichtung und Verfahren zur Herstellung eines solchen Gehäuses
US8669633B2 (en) * 2010-07-28 2014-03-11 Teledyne Dalsa, Inc. Packaged device with an image sensor aligned to a faceplate using fiducial marks and connection bodies registered thereto
JP2012039031A (ja) * 2010-08-11 2012-02-23 Nitto Denko Corp 発光装置
DE102010041576B4 (de) * 2010-09-29 2015-02-26 Carl Zeiss Smt Gmbh Verfahren zum Verbinden von Körpern, Verbundkörper sowie dessen Verwendung
US8912671B2 (en) * 2013-05-16 2014-12-16 Himax Technologies Limited Semiconductor device having alignment mark
US9587425B2 (en) 2013-09-13 2017-03-07 3M Innovative Properties Company Vacuum glazing pillars delivery films and methods for insulated glass units
US9346671B2 (en) * 2014-02-04 2016-05-24 Freescale Semiconductor, Inc. Shielding MEMS structures during wafer dicing
US9419033B2 (en) * 2014-10-24 2016-08-16 Powertech Technology Inc. Chip scale package of image sensor having dam combination
JP6701784B2 (ja) * 2016-02-17 2020-05-27 株式会社リコー 液体吐出ヘッド、液体吐出ユニット及び液体を吐出する装置
US20170280034A1 (en) * 2016-03-23 2017-09-28 Magna Electronics Inc. Vehicle vision system camera with enhanced imager and lens assembly
US20200243588A1 (en) * 2016-05-30 2020-07-30 China Wafer Level Csp Co., Ltd. Packaging structure and packaging method
JP6791584B2 (ja) * 2017-02-01 2020-11-25 株式会社ディスコ 加工方法
KR102048747B1 (ko) * 2018-04-16 2019-11-26 한국기계연구원 마이크로 소자 전사방법
US11515347B2 (en) * 2020-01-20 2022-11-29 Omnivision Technologies, Inc. Dam of image sensor module having sawtooth pattern and inclined surface on its inner wall and method of making same
WO2022224301A1 (ja) * 2021-04-19 2022-10-27 オリンパス株式会社 撮像ユニット、内視鏡、および、撮像ユニットの製造方法
TWI803990B (zh) * 2021-09-24 2023-06-01 友達光電股份有限公司 移轉裝置與移轉方法

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JP2843464B2 (ja) * 1992-09-01 1999-01-06 シャープ株式会社 固体撮像装置
US5896150A (en) * 1992-11-25 1999-04-20 Seiko Epson Corporation Ink-jet type recording head
US6969635B2 (en) * 2000-12-07 2005-11-29 Reflectivity, Inc. Methods for depositing, releasing and packaging micro-electromechanical devices on wafer substrates
US6114188A (en) * 1996-04-12 2000-09-05 Northeastern University Method of fabricating an integrated complex-transition metal oxide device
US6027958A (en) * 1996-07-11 2000-02-22 Kopin Corporation Transferred flexible integrated circuit
US6266872B1 (en) * 1996-12-12 2001-07-31 Tessera, Inc. Method for making a connection component for a semiconductor chip package
JPH1131751A (ja) * 1997-07-10 1999-02-02 Sony Corp 中空パッケージとその製造方法
US6531334B2 (en) * 1997-07-10 2003-03-11 Sony Corporation Method for fabricating hollow package with a solid-state image device
US5893726A (en) * 1997-12-15 1999-04-13 Micron Technology, Inc. Semiconductor package with pre-fabricated cover and method of fabrication
US7091605B2 (en) * 2001-09-21 2006-08-15 Eastman Kodak Company Highly moisture-sensitive electronic device element and method for fabrication
US6168965B1 (en) * 1999-08-12 2001-01-02 Tower Semiconductor Ltd. Method for making backside illuminated image sensor
US6455774B1 (en) * 1999-12-08 2002-09-24 Amkor Technology, Inc. Molded image sensor package
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JP2001351997A (ja) * 2000-06-09 2001-12-21 Canon Inc 受光センサーの実装構造体およびその使用方法
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TW471143B (en) * 2001-01-04 2002-01-01 Wen-Wen Chiou Integrated circuit chip package
JP2002231921A (ja) * 2001-02-06 2002-08-16 Olympus Optical Co Ltd 固体撮像装置及びその製造方法
JP2002289718A (ja) * 2001-03-27 2002-10-04 Kyocera Corp 固体撮像装置
JP4757398B2 (ja) * 2001-04-24 2011-08-24 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
WO2003010825A1 (en) * 2001-07-24 2003-02-06 Seiko Epson Corporation Transfer method, method of manufacturing thin film element, method of manufacturing integrated circuit, circuit substrate and method of manufacturing the circuit substrate, electro-optic device and method of manufacturing the electro-optic device, and ic card and electronic equipmen
JP4095300B2 (ja) * 2001-12-27 2008-06-04 セイコーエプソン株式会社 光デバイス及びその製造方法、光モジュール、回路基板並びに電子機器
JP3881888B2 (ja) * 2001-12-27 2007-02-14 セイコーエプソン株式会社 光デバイスの製造方法
JP4211256B2 (ja) * 2001-12-28 2009-01-21 セイコーエプソン株式会社 半導体集積回路、半導体集積回路の製造方法、電気光学装置、電子機器
JP4443865B2 (ja) * 2002-06-24 2010-03-31 富士フイルム株式会社 固体撮像装置およびその製造方法
JP4037197B2 (ja) * 2002-07-17 2008-01-23 富士フイルム株式会社 半導体撮像装置実装構造体の製造方法
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JP2004296453A (ja) * 2003-02-06 2004-10-21 Sharp Corp 固体撮像装置、半導体ウエハ、光学装置用モジュール、固体撮像装置の製造方法及び光学装置用モジュールの製造方法
TWI223428B (en) * 2003-11-13 2004-11-01 United Microelectronics Corp Frame attaching process

Also Published As

Publication number Publication date
US20080231739A1 (en) 2008-09-25
EP1463120A3 (de) 2006-03-22
EP1463120B1 (de) 2008-07-23
EP1463120A2 (de) 2004-09-29
CN1294634C (zh) 2007-01-10
US20060038204A1 (en) 2006-02-23
US7651881B2 (en) 2010-01-26
US20040189855A1 (en) 2004-09-30
JP2004312666A (ja) 2004-11-04
CN1542931A (zh) 2004-11-03

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Legal Events

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8364 No opposition during term of opposition