DE60143342D1 - Lichtemittierendes Halbleiterelement - Google Patents

Lichtemittierendes Halbleiterelement

Info

Publication number
DE60143342D1
DE60143342D1 DE60143342T DE60143342T DE60143342D1 DE 60143342 D1 DE60143342 D1 DE 60143342D1 DE 60143342 T DE60143342 T DE 60143342T DE 60143342 T DE60143342 T DE 60143342T DE 60143342 D1 DE60143342 D1 DE 60143342D1
Authority
DE
Germany
Prior art keywords
layer
light
semiconductor element
emitting semiconductor
base layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60143342T
Other languages
German (de)
English (en)
Inventor
Yuji Hori
Tomohiko Shibata
Mitsuhiro Tanaka
Osamu Oda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Application granted granted Critical
Publication of DE60143342D1 publication Critical patent/DE60143342D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H10H20/8252—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

Landscapes

  • Led Devices (AREA)
  • Led Device Packages (AREA)
DE60143342T 2000-12-04 2001-12-03 Lichtemittierendes Halbleiterelement Expired - Lifetime DE60143342D1 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000367941 2000-12-04
JP2001013432 2001-01-22
JP2001087738 2001-03-26
JP2001106576 2001-04-05
JP2001322926A JP3872327B2 (ja) 2000-12-04 2001-10-22 半導体発光素子

Publications (1)

Publication Number Publication Date
DE60143342D1 true DE60143342D1 (de) 2010-12-09

Family

ID=27531730

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60143342T Expired - Lifetime DE60143342D1 (de) 2000-12-04 2001-12-03 Lichtemittierendes Halbleiterelement

Country Status (5)

Country Link
US (2) US6573535B2 (enExample)
EP (1) EP1211737B1 (enExample)
JP (1) JP3872327B2 (enExample)
AT (1) ATE486373T1 (enExample)
DE (1) DE60143342D1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100471096B1 (ko) * 2004-04-26 2005-03-14 (주)에피플러스 금속 아일랜드를 이용한 반도체 에피택시층 제조방법
JP4327339B2 (ja) * 2000-07-28 2009-09-09 独立行政法人物質・材料研究機構 半導体層形成用基板とそれを利用した半導体装置
JP3484427B2 (ja) 2001-03-28 2004-01-06 日本碍子株式会社 発光素子
JP2004247681A (ja) * 2003-02-17 2004-09-02 Sharp Corp 酸化物半導体発光素子
EP1471582A1 (en) 2003-03-31 2004-10-27 Ngk Insulators, Ltd. Substrate for semiconductor light-emitting element, semiconductor light-emitting element and its fabrication
NL1023679C2 (nl) * 2003-06-17 2004-12-20 Tno Lichtemitterende diode.
JP2011082528A (ja) * 2003-11-26 2011-04-21 Ricoh Co Ltd 半導体発光素子
EP1733077B1 (en) * 2004-01-15 2018-04-18 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
US8288942B2 (en) 2004-12-28 2012-10-16 Cree, Inc. High efficacy white LED
WO2006127030A1 (en) * 2005-05-20 2006-11-30 Cree, Inc. High efficacy white led
FR2888664B1 (fr) * 2005-07-18 2008-05-02 Centre Nat Rech Scient Procede de realisation d'un transistor bipolaire a heterojonction
EP1755172A1 (en) 2005-08-17 2007-02-21 Ngk Insulators, Ltd. Semiconductor layered structure and its method of formation, and light emitting device
US8008670B2 (en) * 2006-02-21 2011-08-30 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US9406505B2 (en) * 2006-02-23 2016-08-02 Allos Semiconductors Gmbh Nitride semiconductor component and process for its production
FR2898434B1 (fr) * 2006-03-13 2008-05-23 Centre Nat Rech Scient Diode electroluminescente blanche monolithique
JP5008911B2 (ja) * 2006-07-04 2012-08-22 ローム株式会社 半導体発光素子およびその製造方法
FR2932608B1 (fr) * 2008-06-13 2011-04-22 Centre Nat Rech Scient Procede de croissance de nitrure d'elements du groupe iii.
US8283412B2 (en) * 2009-05-01 2012-10-09 Nanosys, Inc. Functionalized matrices for dispersion of nanostructures
FR2953994B1 (fr) * 2009-12-15 2012-06-08 Commissariat Energie Atomique Source de photons resultants d'une recombinaison d'excitons localises
KR100993074B1 (ko) * 2009-12-29 2010-11-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
JP5600086B2 (ja) * 2011-08-29 2014-10-01 日本電信電話株式会社 光素子およびその製造方法
US9139770B2 (en) 2012-06-22 2015-09-22 Nanosys, Inc. Silicone ligands for stabilizing quantum dot films
TWI596188B (zh) 2012-07-02 2017-08-21 奈米系統股份有限公司 高度發光奈米結構及其製造方法
JP5952130B2 (ja) * 2012-08-15 2016-07-13 日本電信電話株式会社 光素子の製造方法
JP5947148B2 (ja) * 2012-08-15 2016-07-06 日本電信電話株式会社 光素子の製造方法
EP2970764B1 (en) 2013-03-14 2018-03-07 Nanosys, Inc. Method for solventless quantum dot exchange
US9240449B2 (en) * 2014-05-26 2016-01-19 Yu-chen Chang Zero-dimensional electron devices and methods of fabricating the same

Family Cites Families (16)

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Publication number Priority date Publication date Assignee Title
FR2656955B1 (fr) 1990-01-10 1996-12-13 France Etat Structure a semiconducteurs pour composant optoelectronique.
US5523589A (en) * 1994-09-20 1996-06-04 Cree Research, Inc. Vertical geometry light emitting diode with group III nitride active layer and extended lifetime
JPH0918053A (ja) 1995-06-27 1997-01-17 Hitachi Ltd 窒化物系化合物半導体発光素子およびその製造方法
JPH0964477A (ja) 1995-08-25 1997-03-07 Toshiba Corp 半導体発光素子及びその製造方法
JPH1027923A (ja) 1996-07-09 1998-01-27 Toyoda Gosei Co Ltd ３族窒化物半導体発光素子
US5684309A (en) 1996-07-11 1997-11-04 North Carolina State University Stacked quantum well aluminum indium gallium nitride light emitting diodes
JP3987898B2 (ja) 1996-09-03 2007-10-10 独立行政法人理化学研究所 量子ドット形成方法及び量子ドット構造体
US6177292B1 (en) * 1996-12-05 2001-01-23 Lg Electronics Inc. Method for forming GaN semiconductor single crystal substrate and GaN diode with the substrate
JPH1140891A (ja) * 1997-07-15 1999-02-12 Nec Corp 窒化ガリウム系半導体発光素子及びその製造方法
US6177202B1 (en) * 1997-10-31 2001-01-23 Mitsuboshi Belting Ltd. Power transmission belt
JPH11340147A (ja) 1998-05-25 1999-12-10 Matsushita Electron Corp 窒化物半導体ウエハーの製造方法および窒化物半導体素子の製造方法
JP3667995B2 (ja) 1998-06-04 2005-07-06 三菱電線工業株式会社 ＧａＮ系量子ドット構造の製造方法およびその用途
JPH11354842A (ja) 1998-06-04 1999-12-24 Mitsubishi Cable Ind Ltd ＧａＮ系半導体発光素子
JP3660801B2 (ja) * 1998-06-04 2005-06-15 三菱電線工業株式会社 ＧａＮ系半導体発光素子
JP4292600B2 (ja) 1998-09-11 2009-07-08 ソニー株式会社 ＧａＮ系半導体発光素子およびその製造方法
US6255669B1 (en) * 1999-04-23 2001-07-03 The University Of Cincinnati Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element

Also Published As

Publication number Publication date
ATE486373T1 (de) 2010-11-15
EP1211737A3 (en) 2006-10-18
USRE40485E1 (en) 2008-09-09
JP3872327B2 (ja) 2007-01-24
EP1211737B1 (en) 2010-10-27
US6573535B2 (en) 2003-06-03
JP2002368267A (ja) 2002-12-20
US20020105004A1 (en) 2002-08-08
EP1211737A2 (en) 2002-06-05

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