ATE486373T1 - Lichtemittierendes halbleiterelement - Google Patents
Lichtemittierendes halbleiterelementInfo
- Publication number
- ATE486373T1 ATE486373T1 AT01128743T AT01128743T ATE486373T1 AT E486373 T1 ATE486373 T1 AT E486373T1 AT 01128743 T AT01128743 T AT 01128743T AT 01128743 T AT01128743 T AT 01128743T AT E486373 T1 ATE486373 T1 AT E486373T1
- Authority
- AT
- Austria
- Prior art keywords
- layer
- light emitting
- semiconductor element
- emitting semiconductor
- base layer
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 2
- 229910002704 AlGaN Inorganic materials 0.000 abstract 1
- 238000005253 cladding Methods 0.000 abstract 1
- 229910052761 rare earth metal Inorganic materials 0.000 abstract 1
- 150000002910 rare earth metals Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Led Device Packages (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000367941 | 2000-12-04 | ||
JP2001013432 | 2001-01-22 | ||
JP2001087738 | 2001-03-26 | ||
JP2001106576 | 2001-04-05 | ||
JP2001322926A JP3872327B2 (ja) | 2000-12-04 | 2001-10-22 | 半導体発光素子 |
Publications (1)
Publication Number | Publication Date |
---|---|
ATE486373T1 true ATE486373T1 (de) | 2010-11-15 |
Family
ID=27531730
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AT01128743T ATE486373T1 (de) | 2000-12-04 | 2001-12-03 | Lichtemittierendes halbleiterelement |
Country Status (5)
Country | Link |
---|---|
US (2) | US6573535B2 (de) |
EP (1) | EP1211737B1 (de) |
JP (1) | JP3872327B2 (de) |
AT (1) | ATE486373T1 (de) |
DE (1) | DE60143342D1 (de) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100471096B1 (ko) | 2004-04-26 | 2005-03-14 | (주)에피플러스 | 금속 아일랜드를 이용한 반도체 에피택시층 제조방법 |
JP4327339B2 (ja) * | 2000-07-28 | 2009-09-09 | 独立行政法人物質・材料研究機構 | 半導体層形成用基板とそれを利用した半導体装置 |
JP2004247681A (ja) * | 2003-02-17 | 2004-09-02 | Sharp Corp | 酸化物半導体発光素子 |
EP1471582A1 (de) | 2003-03-31 | 2004-10-27 | Ngk Insulators, Ltd. | Substrat für einen Halbleiter-Leuchtelement, Halbleiter-Leuchtelement und dessen Herstellung |
NL1023679C2 (nl) * | 2003-06-17 | 2004-12-20 | Tno | Lichtemitterende diode. |
JP2011082528A (ja) * | 2003-11-26 | 2011-04-21 | Ricoh Co Ltd | 半導体発光素子 |
US7374807B2 (en) * | 2004-01-15 | 2008-05-20 | Nanosys, Inc. | Nanocrystal doped matrixes |
US8288942B2 (en) | 2004-12-28 | 2012-10-16 | Cree, Inc. | High efficacy white LED |
JP2008541477A (ja) * | 2005-05-20 | 2008-11-20 | クリー, インコーポレイティッド | 高効率の白色発光ダイオード |
FR2888664B1 (fr) * | 2005-07-18 | 2008-05-02 | Centre Nat Rech Scient | Procede de realisation d'un transistor bipolaire a heterojonction |
EP1755172A1 (de) | 2005-08-17 | 2007-02-21 | Ngk Insulators, Ltd. | Halbleiter-Schichtstruktur und deren Herstellungsverfahren, und lichtemittierende Vorrichtung |
US8008670B2 (en) * | 2006-02-21 | 2011-08-30 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting device |
US9406505B2 (en) * | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
FR2898434B1 (fr) * | 2006-03-13 | 2008-05-23 | Centre Nat Rech Scient | Diode electroluminescente blanche monolithique |
JP5008911B2 (ja) * | 2006-07-04 | 2012-08-22 | ローム株式会社 | 半導体発光素子およびその製造方法 |
FR2932608B1 (fr) * | 2008-06-13 | 2011-04-22 | Centre Nat Rech Scient | Procede de croissance de nitrure d'elements du groupe iii. |
US8283412B2 (en) | 2009-05-01 | 2012-10-09 | Nanosys, Inc. | Functionalized matrices for dispersion of nanostructures |
FR2953994B1 (fr) * | 2009-12-15 | 2012-06-08 | Commissariat Energie Atomique | Source de photons resultants d'une recombinaison d'excitons localises |
KR100993074B1 (ko) * | 2009-12-29 | 2010-11-08 | 엘지이노텍 주식회사 | 발광소자, 발광소자의 제조방법 및 발광소자 패키지 |
JP5600086B2 (ja) * | 2011-08-29 | 2014-10-01 | 日本電信電話株式会社 | 光素子およびその製造方法 |
US9139770B2 (en) | 2012-06-22 | 2015-09-22 | Nanosys, Inc. | Silicone ligands for stabilizing quantum dot films |
TWI596188B (zh) | 2012-07-02 | 2017-08-21 | 奈米系統股份有限公司 | 高度發光奈米結構及其製造方法 |
JP5947148B2 (ja) * | 2012-08-15 | 2016-07-06 | 日本電信電話株式会社 | 光素子の製造方法 |
JP5952130B2 (ja) * | 2012-08-15 | 2016-07-13 | 日本電信電話株式会社 | 光素子の製造方法 |
WO2014159927A2 (en) | 2013-03-14 | 2014-10-02 | Nanosys, Inc. | Method for solventless quantum dot exchange |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2656955B1 (fr) | 1990-01-10 | 1996-12-13 | France Etat | Structure a semiconducteurs pour composant optoelectronique. |
US5523589A (en) * | 1994-09-20 | 1996-06-04 | Cree Research, Inc. | Vertical geometry light emitting diode with group III nitride active layer and extended lifetime |
JPH0918053A (ja) | 1995-06-27 | 1997-01-17 | Hitachi Ltd | 窒化物系化合物半導体発光素子およびその製造方法 |
JPH0964477A (ja) | 1995-08-25 | 1997-03-07 | Toshiba Corp | 半導体発光素子及びその製造方法 |
JPH1027923A (ja) | 1996-07-09 | 1998-01-27 | Toyoda Gosei Co Ltd | 3族窒化物半導体発光素子 |
US5684309A (en) | 1996-07-11 | 1997-11-04 | North Carolina State University | Stacked quantum well aluminum indium gallium nitride light emitting diodes |
JP3987898B2 (ja) | 1996-09-03 | 2007-10-10 | 独立行政法人理化学研究所 | 量子ドット形成方法及び量子ドット構造体 |
JPH111399A (ja) * | 1996-12-05 | 1999-01-06 | Lg Electron Inc | 窒化ガリウム半導体単結晶基板の製造方法並びにその基板を用いた窒化ガリウムダイオード |
JPH1140891A (ja) * | 1997-07-15 | 1999-02-12 | Nec Corp | 窒化ガリウム系半導体発光素子及びその製造方法 |
US6177202B1 (en) * | 1997-10-31 | 2001-01-23 | Mitsuboshi Belting Ltd. | Power transmission belt |
JPH11340147A (ja) | 1998-05-25 | 1999-12-10 | Matsushita Electron Corp | 窒化物半導体ウエハーの製造方法および窒化物半導体素子の製造方法 |
JPH11354842A (ja) | 1998-06-04 | 1999-12-24 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子 |
JP3660801B2 (ja) * | 1998-06-04 | 2005-06-15 | 三菱電線工業株式会社 | GaN系半導体発光素子 |
JP3667995B2 (ja) | 1998-06-04 | 2005-07-06 | 三菱電線工業株式会社 | GaN系量子ドット構造の製造方法およびその用途 |
JP4292600B2 (ja) | 1998-09-11 | 2009-07-08 | ソニー株式会社 | GaN系半導体発光素子およびその製造方法 |
US6255669B1 (en) * | 1999-04-23 | 2001-07-03 | The University Of Cincinnati | Visible light emitting device formed from wide band gap semiconductor doped with a rare earth element |
-
2001
- 2001-10-22 JP JP2001322926A patent/JP3872327B2/ja not_active Expired - Lifetime
- 2001-11-30 US US09/997,996 patent/US6573535B2/en not_active Ceased
- 2001-12-03 EP EP01128743A patent/EP1211737B1/de not_active Expired - Lifetime
- 2001-12-03 AT AT01128743T patent/ATE486373T1/de not_active IP Right Cessation
- 2001-12-03 DE DE60143342T patent/DE60143342D1/de not_active Expired - Lifetime
-
2005
- 2005-05-27 US US11/140,524 patent/USRE40485E1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP1211737A3 (de) | 2006-10-18 |
US6573535B2 (en) | 2003-06-03 |
US20020105004A1 (en) | 2002-08-08 |
USRE40485E1 (en) | 2008-09-09 |
DE60143342D1 (de) | 2010-12-09 |
EP1211737A2 (de) | 2002-06-05 |
EP1211737B1 (de) | 2010-10-27 |
JP2002368267A (ja) | 2002-12-20 |
JP3872327B2 (ja) | 2007-01-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |