ATE515790T1 - Verbesserter puffer zum wachstum von gan auf saphir - Google Patents

Verbesserter puffer zum wachstum von gan auf saphir

Info

Publication number
ATE515790T1
ATE515790T1 AT01961721T AT01961721T ATE515790T1 AT E515790 T1 ATE515790 T1 AT E515790T1 AT 01961721 T AT01961721 T AT 01961721T AT 01961721 T AT01961721 T AT 01961721T AT E515790 T1 ATE515790 T1 AT E515790T1
Authority
AT
Austria
Prior art keywords
sapphire
growing gan
improved buffer
gan
layer
Prior art date
Application number
AT01961721T
Other languages
English (en)
Inventor
Changhua Chen
James Dong
Heng Liu
Xiuping Cheng
Original Assignee
Lumei Optoelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumei Optoelectronics Corp filed Critical Lumei Optoelectronics Corp
Application granted granted Critical
Publication of ATE515790T1 publication Critical patent/ATE515790T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/02505—Layer structure consisting of more than two layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AT01961721T 2000-07-26 2001-07-25 Verbesserter puffer zum wachstum von gan auf saphir ATE515790T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/626,442 US6495867B1 (en) 2000-07-26 2000-07-26 InGaN/AlGaN/GaN multilayer buffer for growth of GaN on sapphire
PCT/US2001/023330 WO2002009199A1 (en) 2000-07-26 2001-07-25 IMPROVED BUFFER FOR GROWTH OF GaN ON SAPPHIRE

Publications (1)

Publication Number Publication Date
ATE515790T1 true ATE515790T1 (de) 2011-07-15

Family

ID=24510383

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01961721T ATE515790T1 (de) 2000-07-26 2001-07-25 Verbesserter puffer zum wachstum von gan auf saphir

Country Status (7)

Country Link
US (2) US6495867B1 (de)
EP (1) EP1320901B1 (de)
AT (1) ATE515790T1 (de)
AU (1) AU2001282966A1 (de)
CA (1) CA2412419C (de)
ES (1) ES2367354T3 (de)
WO (1) WO2002009199A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10042947A1 (de) * 2000-08-31 2002-03-21 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
KR100583163B1 (ko) * 2002-08-19 2006-05-23 엘지이노텍 주식회사 질화물 반도체 및 그 제조방법
TW577183B (en) * 2002-12-13 2004-02-21 Vtera Technology Inc High lattice matched light emitting device
KR100504180B1 (ko) * 2003-01-29 2005-07-28 엘지전자 주식회사 질화물 화합물 반도체의 결정성장 방법
US6869812B1 (en) 2003-05-13 2005-03-22 Heng Liu High power AllnGaN based multi-chip light emitting diode
KR101034055B1 (ko) 2003-07-18 2011-05-12 엘지이노텍 주식회사 발광 다이오드 및 그 제조방법
US20050110040A1 (en) * 2003-11-26 2005-05-26 Hui Peng Texture for localizing and minimizing effects of lattice constants mismatch
US20060255349A1 (en) * 2004-05-11 2006-11-16 Heng Liu High power AllnGaN based multi-chip light emitting diode
US20050274958A1 (en) * 2004-06-12 2005-12-15 Ting-Kai Huang Buffer layer of light emitting semiconducting device
JP4818732B2 (ja) * 2005-03-18 2011-11-16 シャープ株式会社 窒化物半導体素子の製造方法
KR100753152B1 (ko) 2005-08-12 2007-08-30 삼성전자주식회사 질화물계 발광소자 및 그 제조방법
US7795050B2 (en) * 2005-08-12 2010-09-14 Samsung Electronics Co., Ltd. Single-crystal nitride-based semiconductor substrate and method of manufacturing high-quality nitride-based light emitting device by using the same
WO2007040295A1 (en) * 2005-10-04 2007-04-12 Seoul Opto Device Co., Ltd. (al, ga, in)n-based compound semiconductor and method of fabricating the same
US7566641B2 (en) * 2007-05-09 2009-07-28 Axt, Inc. Low etch pit density (EPD) semi-insulating GaAs wafers
US8361225B2 (en) 2007-05-09 2013-01-29 Axt, Inc. Low etch pit density (EPD) semi-insulating III-V wafers
US8692261B2 (en) * 2010-05-19 2014-04-08 Koninklijke Philips N.V. Light emitting device grown on a relaxed layer
CN103078025B (zh) * 2013-01-25 2015-09-02 映瑞光电科技(上海)有限公司 一种led外延片及其制造方法
US9337023B1 (en) 2014-12-15 2016-05-10 Texas Instruments Incorporated Buffer stack for group IIIA-N devices
CN104701432A (zh) * 2015-03-20 2015-06-10 映瑞光电科技(上海)有限公司 GaN 基LED 外延结构及其制备方法
US10529561B2 (en) 2015-12-28 2020-01-07 Texas Instruments Incorporated Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devices
WO2019066908A1 (en) * 2017-09-29 2019-04-04 Intel Corporation GROUP III NITRIDE POLARIZATION JUNCTION DIODE
US11295992B2 (en) 2017-09-29 2022-04-05 Intel Corporation Tunnel polarization junction III-N transistors
WO2019066921A1 (en) 2017-09-29 2019-04-04 Intel Corporation GROUP III NITRIDE ELECTROLUMINESCENT DEVICES COMPRISING POLARIZATION JUNCTION
US11437504B2 (en) 2017-09-29 2022-09-06 Intel Corporation Complementary group III-nitride transistors with complementary polarization junctions
US10886435B2 (en) * 2017-11-16 2021-01-05 Panasonic Corporation Group III nitride semiconductor with InGaN diffusion blocking layer

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5656832A (en) * 1994-03-09 1997-08-12 Kabushiki Kaisha Toshiba Semiconductor heterojunction device with ALN buffer layer of 3nm-10nm average film thickness
JP3771952B2 (ja) * 1995-06-28 2006-05-10 ソニー株式会社 単結晶ｉｉｉ−ｖ族化合物半導体層の成長方法、発光素子の製造方法およびトランジスタの製造方法
US5903017A (en) * 1996-02-26 1999-05-11 Kabushiki Kaisha Toshiba Compound semiconductor device formed of nitrogen-containing gallium compound such as GaN, AlGaN or InGaN
CN1297016C (zh) * 1997-01-09 2007-01-24 日亚化学工业株式会社 氮化物半导体元器件
JP3080155B2 (ja) * 1997-11-05 2000-08-21 サンケン電気株式会社 窒化ガリウム半導体層を有する半導体装置及びその製造方法
SG75844A1 (en) * 1998-05-13 2000-10-24 Univ Singapore Crystal growth method for group-iii nitride and related compound semiconductors
US6064078A (en) * 1998-05-22 2000-05-16 Xerox Corporation Formation of group III-V nitride films on sapphire substrates with reduced dislocation densities
US6233265B1 (en) * 1998-07-31 2001-05-15 Xerox Corporation AlGaInN LED and laser diode structures for pure blue or green emission
US6285698B1 (en) * 1998-09-25 2001-09-04 Xerox Corporation MOCVD growth of InGaN quantum well laser structures on a grooved lower waveguiding layer
AU2001274810A1 (en) * 2000-04-17 2001-10-30 Virginia Commonwealth University Defect reduction in gan and related materials

Also Published As

Publication number Publication date
US20020175337A1 (en) 2002-11-28
EP1320901B1 (de) 2011-07-06
AU2001282966A1 (en) 2002-02-05
EP1320901A1 (de) 2003-06-25
US6495867B1 (en) 2002-12-17
CA2412419C (en) 2009-10-06
EP1320901A4 (de) 2006-08-16
US6630695B2 (en) 2003-10-07
CA2412419A1 (en) 2002-01-31
ES2367354T3 (es) 2011-11-02
WO2002009199A1 (en) 2002-01-31

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