DE69600384D1 - Halbleiterlaser bestehend aus mit seltenen Erden dotiertem Diamant - Google Patents
Halbleiterlaser bestehend aus mit seltenen Erden dotiertem DiamantInfo
- Publication number
- DE69600384D1 DE69600384D1 DE69600384T DE69600384T DE69600384D1 DE 69600384 D1 DE69600384 D1 DE 69600384D1 DE 69600384 T DE69600384 T DE 69600384T DE 69600384 T DE69600384 T DE 69600384T DE 69600384 D1 DE69600384 D1 DE 69600384D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor laser
- rare earths
- diamond doped
- laser consisting
- diamond
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1601—Solid materials characterised by an active (lasing) ion
- H01S3/1603—Solid materials characterised by an active (lasing) ion rare earth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/1628—Solid materials characterised by a semiconducting matrix
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/14—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range characterised by the material used as the active medium
- H01S3/16—Solid materials
- H01S3/163—Solid materials characterised by a crystal matrix
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP05920295A JP3584450B2 (ja) | 1995-03-17 | 1995-03-17 | レーザー発振素子及びレーザー発振装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69600384D1 true DE69600384D1 (de) | 1998-08-06 |
DE69600384T2 DE69600384T2 (de) | 1999-01-28 |
Family
ID=13106609
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69600384T Expired - Lifetime DE69600384T2 (de) | 1995-03-17 | 1996-03-13 | Halbleiterlaser bestehend aus mit seltenen Erden dotiertem Diamant |
Country Status (5)
Country | Link |
---|---|
US (1) | US5812573A (de) |
EP (1) | EP0732784B1 (de) |
JP (1) | JP3584450B2 (de) |
CA (1) | CA2171781C (de) |
DE (1) | DE69600384T2 (de) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6140669A (en) * | 1999-02-20 | 2000-10-31 | Ohio University | Gallium nitride doped with rare earth ions and method and structure for achieving visible light emission |
JP3138705B1 (ja) * | 1999-08-31 | 2001-02-26 | 工業技術院長 | ダイヤモンドpn接合ダイオードおよびその作製方法 |
JP2003014992A (ja) * | 2001-07-02 | 2003-01-15 | Matsushita Electric Ind Co Ltd | 半導体レーザモジュールおよび光伝送システム |
JP2003051609A (ja) * | 2001-08-03 | 2003-02-21 | Tokyo Gas Co Ltd | ダイヤモンド高輝度紫外線発光素子 |
US7224532B2 (en) * | 2002-12-06 | 2007-05-29 | Chevron U.S.A. Inc. | Optical uses diamondoid-containing materials |
US20050019955A1 (en) * | 2003-07-23 | 2005-01-27 | Dahl Jeremy E. | Luminescent heterodiamondoids as biological labels |
KR100644929B1 (ko) * | 2004-03-04 | 2006-11-13 | 한국원자력연구소 | 이온주입과 열처리에 의한 발색된 다이아몬드의 제조방법 |
US8246746B2 (en) | 2007-01-29 | 2012-08-21 | Carnegie Institution Of Washington | Laser uses for single-crystal CVD diamond |
US7660335B2 (en) * | 2008-04-17 | 2010-02-09 | Lasertel, Inc. | Liquid cooled laser bar arrays incorporating diamond/copper expansion matched materials |
JP5614165B2 (ja) * | 2010-08-17 | 2014-10-29 | 住友電気工業株式会社 | ダイヤモンド |
US20170037540A1 (en) * | 2015-08-07 | 2017-02-09 | North Carolina State University | Conversion of boron nitride into n-type and p-type doped cubic boron nitride and structures |
WO2017083929A1 (en) * | 2015-11-18 | 2017-05-26 | Macquarie University | High power raman laser system and method |
WO2018005619A1 (en) | 2016-06-28 | 2018-01-04 | North Carolina State University | Synthesis and processing of pure and nv nanodiamonds and other nanostructures for quantum computing and magnetic sensing applications |
US11025031B2 (en) | 2016-11-29 | 2021-06-01 | Leonardo Electronics Us Inc. | Dual junction fiber-coupled laser diode and related methods |
CN107988584B (zh) * | 2017-12-20 | 2023-04-11 | 深圳先进技术研究院 | 一种具有金刚石薄膜的硬质合金及其制备方法和应用 |
US11406004B2 (en) | 2018-08-13 | 2022-08-02 | Leonardo Electronics Us Inc. | Use of metal-core printed circuit board (PCB) for generation of ultra-narrow, high-current pulse driver |
DE102019121924A1 (de) | 2018-08-14 | 2020-02-20 | Lasertel, Inc. | Laserbaugruppe und zugehörige verfahren |
US11296481B2 (en) | 2019-01-09 | 2022-04-05 | Leonardo Electronics Us Inc. | Divergence reshaping array |
US11752571B1 (en) | 2019-06-07 | 2023-09-12 | Leonardo Electronics Us Inc. | Coherent beam coupler |
US11600963B2 (en) | 2020-04-22 | 2023-03-07 | The Boeing Company | Diamond-based high-stability optical devices for precision frequency and time generation |
CN111593316B (zh) * | 2020-05-11 | 2022-06-21 | 南京岱蒙特科技有限公司 | 一种高比表面积超亲水的梯度硼掺杂金刚石电极及其制备方法和应用 |
CN114941132A (zh) * | 2022-05-27 | 2022-08-26 | 邵阳市东昇超硬材料有限公司 | 一种增强型金刚石材料 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4638484A (en) * | 1984-11-20 | 1987-01-20 | Hughes Aircraft Company | Solid state laser employing diamond having color centers as a laser active material |
JPS6474783A (en) * | 1987-09-17 | 1989-03-20 | Fujitsu Ltd | Semiconductor light-emitting device |
JP2661307B2 (ja) * | 1990-01-31 | 1997-10-08 | 日本電気株式会社 | 半導体レーザ |
JP2730271B2 (ja) * | 1990-03-07 | 1998-03-25 | 住友電気工業株式会社 | 半導体装置 |
JPH04333291A (ja) * | 1991-05-09 | 1992-11-20 | Agency Of Ind Science & Technol | ダブルヘテロ接合構造及び半導体レーザー素子 |
US5381755A (en) * | 1991-08-20 | 1995-01-17 | The United States Of America As Represented By The Secretary Of The Navy | Method of synthesizing high quality, doped diamond and diamonds and devices obtained therefrom |
JPH05291655A (ja) * | 1992-04-07 | 1993-11-05 | Oki Electric Ind Co Ltd | プレーナ光導波路形レーザ素子及びレーザ装置 |
JP3462514B2 (ja) * | 1992-09-16 | 2003-11-05 | 住友電気工業株式会社 | 固体レーザ |
JP2541090B2 (ja) * | 1993-01-13 | 1996-10-09 | 日本電気株式会社 | レ―ザ発振装置 |
US5434876A (en) * | 1992-10-23 | 1995-07-18 | At&T Bell Laboratories | Article comprising an optical waveguide laser |
JPH06219776A (ja) * | 1993-01-28 | 1994-08-09 | Hoya Corp | Ybを増感剤とするErドープレーザーガラス |
US5504767A (en) * | 1995-03-17 | 1996-04-02 | Si Diamond Technology, Inc. | Doped diamond laser |
-
1995
- 1995-03-17 JP JP05920295A patent/JP3584450B2/ja not_active Expired - Fee Related
-
1996
- 1996-03-13 EP EP96103987A patent/EP0732784B1/de not_active Expired - Lifetime
- 1996-03-13 DE DE69600384T patent/DE69600384T2/de not_active Expired - Lifetime
- 1996-03-14 CA CA002171781A patent/CA2171781C/en not_active Expired - Fee Related
- 1996-03-15 US US08/616,552 patent/US5812573A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
CA2171781A1 (en) | 1996-09-18 |
EP0732784B1 (de) | 1998-07-01 |
JP3584450B2 (ja) | 2004-11-04 |
JPH08255946A (ja) | 1996-10-01 |
EP0732784A1 (de) | 1996-09-18 |
CA2171781C (en) | 2005-05-17 |
US5812573A (en) | 1998-09-22 |
DE69600384T2 (de) | 1999-01-28 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: GROSSE, BOCKHORNI, SCHUMACHER, 81476 MUENCHEN |
|
8320 | Willingness to grant licences declared (paragraph 23) | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: BOCKHORNI & KOLLEGEN, 80687 MUENCHEN |