DE60138473D1 - Elektronische einrichtung mit steuerbarer leitfähigkeit - Google Patents

Elektronische einrichtung mit steuerbarer leitfähigkeit

Info

Publication number
DE60138473D1
DE60138473D1 DE60138473T DE60138473T DE60138473D1 DE 60138473 D1 DE60138473 D1 DE 60138473D1 DE 60138473 T DE60138473 T DE 60138473T DE 60138473 T DE60138473 T DE 60138473T DE 60138473 D1 DE60138473 D1 DE 60138473D1
Authority
DE
Germany
Prior art keywords
electronic equipment
controllable conductivity
controllable
conductivity
electronic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60138473T
Other languages
English (en)
Inventor
Masakazu Aono
Kazuya Terabe
Tsuyosi Hasegawa
Tomonobu Nakayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Science and Technology Agency
RIKEN Institute of Physical and Chemical Research
Original Assignee
Japan Science and Technology Agency
RIKEN Institute of Physical and Chemical Research
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Science and Technology Agency, RIKEN Institute of Physical and Chemical Research filed Critical Japan Science and Technology Agency
Application granted granted Critical
Publication of DE60138473D1 publication Critical patent/DE60138473D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H10N99/05—Quantum devices, e.g. quantum interference devices, metal single electron transistors
DE60138473T 2000-09-01 2001-08-30 Elektronische einrichtung mit steuerbarer leitfähigkeit Expired - Lifetime DE60138473D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2000265344A JP4119950B2 (ja) 2000-09-01 2000-09-01 コンダクタンスの制御が可能な電子素子
PCT/JP2001/007514 WO2002021598A1 (fr) 2000-09-01 2001-08-30 Dispositif electronique a conductance controlable

Publications (1)

Publication Number Publication Date
DE60138473D1 true DE60138473D1 (de) 2009-06-04

Family

ID=18752622

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60138473T Expired - Lifetime DE60138473D1 (de) 2000-09-01 2001-08-30 Elektronische einrichtung mit steuerbarer leitfähigkeit

Country Status (7)

Country Link
US (1) US6891186B2 (de)
EP (1) EP1329958B1 (de)
JP (1) JP4119950B2 (de)
KR (1) KR100516384B1 (de)
DE (1) DE60138473D1 (de)
TW (1) TW543082B (de)
WO (1) WO2002021598A1 (de)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100448049C (zh) * 2001-09-25 2008-12-31 独立行政法人科学技术振兴机构 使用固体电解质的电气元件和存储装置及其制造方法
EP1501124B1 (de) 2002-04-30 2011-06-08 Japan Science and Technology Agency Festelektrolyt-schaltelemente, fpga- und speicherbauelemente mit denselben sowie verfahren zur herstellung derselben
DE10256486A1 (de) * 2002-12-03 2004-07-15 Infineon Technologies Ag Verfahren zum Herstellen einer Speicherzelle, Speicherzelle und Speicherzellen-Anordnung
JP4321524B2 (ja) * 2003-07-18 2009-08-26 日本電気株式会社 スイッチング素子、スイッチング素子の駆動方法、書き換え可能な論理集積回路およびメモリ素子
JP2005286084A (ja) * 2004-03-30 2005-10-13 Univ Waseda 量子化コンダクタンス素子、これを用いた磁場変化検出方法及び磁気検出方法、並びに量子化コンダクタンス素子の製造方法
US8003969B2 (en) 2004-12-27 2011-08-23 Nec Corporation Switching device, drive and manufacturing method for the same, integrated circuit device and memory device
US7741638B2 (en) * 2005-11-23 2010-06-22 Hewlett-Packard Development Company, L.P. Control layer for a nanoscale electronic switching device
US8101942B2 (en) 2006-09-19 2012-01-24 The United States Of America As Represented By The Secretary Of Commerce Self-assembled monolayer based silver switches
JP5266472B2 (ja) * 2006-10-03 2013-08-21 独立行政法人物質・材料研究機構 無接点マイクロリレー
JP4869088B2 (ja) * 2007-01-22 2012-02-01 株式会社東芝 半導体記憶装置及びその書き込み方法
EP2184793B1 (de) 2007-08-08 2013-02-27 National Institute for Materials Science Schaltelement und seine anwendung
JP2009246085A (ja) * 2008-03-31 2009-10-22 Hitachi Ltd 半導体装置およびその製造方法
US8557703B2 (en) * 2010-08-12 2013-10-15 Stmicroelectronics, Inc. Method for pre-migration of metal ions in a semiconductor package
JP5696988B2 (ja) * 2011-06-08 2015-04-08 独立行政法人物質・材料研究機構 シナプス動作素子
EP2966684B1 (de) 2013-03-09 2020-10-14 Japan Science and Technology Agency Elektronisches element
CN110117817B (zh) * 2018-02-06 2021-01-12 中国科学院上海硅酸盐研究所 一种塑性半导体材料以及其制备方法
CN113437216B (zh) * 2021-07-06 2023-04-07 武汉理工大学 一种基于电子-离子混合导体的忆阻器及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3482217A (en) * 1963-08-20 1969-12-02 William J Finney Electrolytic methods and apparatus for storage of information
JPH0810606B2 (ja) * 1986-11-25 1996-01-31 日立マクセル株式会社 電圧感応型スイツチング素子
JPH01124971A (ja) * 1987-11-10 1989-05-17 Hitachi Maxell Ltd リチウム二次電池
NL8703119A (nl) * 1987-12-23 1989-07-17 Philips Nv Element voor toepassing in een elektrische schakeling.
US5751156A (en) * 1995-06-07 1998-05-12 Yale University Mechanically controllable break transducer
JPH10302794A (ja) * 1997-04-30 1998-11-13 Matsushita Electric Ind Co Ltd リチウム二次電池
JPH11162467A (ja) * 1997-09-26 1999-06-18 Mitsubishi Chemical Corp 非水系二次電池
EP1159743B1 (de) * 1999-02-11 2007-05-02 Arizona Board of Regents Programmierbare mikroelektronische struktur sowie verfahren zu ihrer herstellung und programmierung

Also Published As

Publication number Publication date
US6891186B2 (en) 2005-05-10
US20040089882A1 (en) 2004-05-13
TW543082B (en) 2003-07-21
EP1329958B1 (de) 2009-04-22
KR100516384B1 (ko) 2005-09-22
JP4119950B2 (ja) 2008-07-16
JP2002076325A (ja) 2002-03-15
WO2002021598A1 (fr) 2002-03-14
KR20030036725A (ko) 2003-05-09
EP1329958A4 (de) 2005-12-28
EP1329958A1 (de) 2003-07-23

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