WO2009020210A1 - スイッチング素子とその用途 - Google Patents

スイッチング素子とその用途 Download PDF

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Publication number
WO2009020210A1
WO2009020210A1 PCT/JP2008/064328 JP2008064328W WO2009020210A1 WO 2009020210 A1 WO2009020210 A1 WO 2009020210A1 JP 2008064328 W JP2008064328 W JP 2008064328W WO 2009020210 A1 WO2009020210 A1 WO 2009020210A1
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
switching element
application
same
conductor
Prior art date
Application number
PCT/JP2008/064328
Other languages
English (en)
French (fr)
Inventor
Tsuyoshi Hasegawa
Masakazu Aono
Fumiko Yano
Kazuya Terabe
Toru Tsuruoka
Tomoko Ebihara
Takuji Ogawa
Hirofumi Tanaka
Takami Hino
Original Assignee
National Institute For Materials Science
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute For Materials Science filed Critical National Institute For Materials Science
Priority to EP08826995A priority Critical patent/EP2184793B1/en
Priority to JP2009526504A priority patent/JP5371010B2/ja
Priority to US12/672,151 priority patent/US8320154B2/en
Publication of WO2009020210A1 publication Critical patent/WO2009020210A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/24—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies
    • H10N70/245—Multistable switching devices, e.g. memristors based on migration or redistribution of ionic species, e.g. anions, vacancies the species being metal cations, e.g. programmable metallization cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/257—Multistable switching devices, e.g. memristors based on radiation or particle beam assisted switching, e.g. optically controlled devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/823—Device geometry adapted for essentially horizontal current flow, e.g. bridge type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8416—Electrodes adapted for supplying ionic species
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/50—Bistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Abstract

　イオン伝導体を含む第一電極４と、導電体からなる第二電極５とを備え、イオン伝導体からの金属イオンの析出により第一電極４と第二電極５との間を物理的かつ電気的に接続させる微小スイッチング素子であって、第一電極４と第二電極５との間に、光を受けてキャリアを発生する光応答膜９が当該電極間を埋めるように配置されていることを特徴とする。これにより、特性のバラツキが小さく、動作不良が生じにくい微小スイッチング素子が提供される。
PCT/JP2008/064328 2007-08-08 2008-08-08 スイッチング素子とその用途 WO2009020210A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP08826995A EP2184793B1 (en) 2007-08-08 2008-08-08 Switching element and application of the same
JP2009526504A JP5371010B2 (ja) 2007-08-08 2008-08-08 スイッチング素子とその用途
US12/672,151 US8320154B2 (en) 2007-08-08 2008-08-08 Switching element and application of the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007207166 2007-08-08
JP2007-207166 2007-08-08

Publications (1)

Publication Number Publication Date
WO2009020210A1 true WO2009020210A1 (ja) 2009-02-12

Family

ID=40341437

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064328 WO2009020210A1 (ja) 2007-08-08 2008-08-08 スイッチング素子とその用途

Country Status (4)

Country Link
US (1) US8320154B2 (ja)
EP (1) EP2184793B1 (ja)
JP (1) JP5371010B2 (ja)
WO (1) WO2009020210A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8121444B2 (en) * 2009-04-24 2012-02-21 Hewlett-Packard Development Company, L.P. Optically and electrically actuatable devices

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016193361A1 (en) 2015-06-04 2016-12-08 Eth Zurich Devices, in particular optical or electro-optical devices with quantized operation
DE102015112408A1 (de) * 2015-07-29 2017-02-02 Endress + Hauser Gmbh + Co. Kg Drucksensor und Verfahren zum Überwachen eines Drucksensors
GB2564844B (en) * 2017-07-17 2019-11-13 Ucl Business Plc A light-activated switching resistor, an optical sensor incorporating a light-activated switching resistor, and methods of using such devices

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261895A (ja) * 1988-08-26 1990-03-01 Matsushita Electric Ind Co Ltd 光記憶素子
JP2002076325A (ja) 2000-09-01 2002-03-15 Japan Science & Technology Corp コンダクタンスの制御が可能な電子素子
JP2002141494A (ja) 2000-11-01 2002-05-17 Japan Science & Technology Corp ポイントコンタクト・アレー
JP2002334989A (ja) 2001-05-09 2002-11-22 Japan Science & Technology Corp Ｎｏｔ回路及びそれを用いた電子回路
JP2006173555A (ja) * 2004-11-17 2006-06-29 Toshiba Corp スイッチング素子と線路切り換え装置及び論理回路
WO2006070698A1 (ja) * 2004-12-27 2006-07-06 Nec Corporation スイッチング素子、スイッチング素子の駆動方法及び製造方法、集積回路装置並びにメモリ素子
JP2008000857A (ja) * 2006-06-23 2008-01-10 National Institute For Materials Science 光ナノスイッチ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2002037572A1 (fr) * 2000-11-01 2002-05-10 Japan Science And Technology Corporation Reseau a pointes, circuit non, et circuit electronique contenant ceux-ci
US6975575B2 (en) * 2001-10-31 2005-12-13 Hewlett-Packard Development Company, L.P. Data storage media and methods utilizing a layer adjacent the storage layer
JP2003094227A (ja) 2001-09-27 2003-04-03 Hitachi Tool Engineering Ltd ラジアスエンドミル
JP2004047791A (ja) * 2002-07-12 2004-02-12 Pioneer Electronic Corp 有機薄膜スイッチングメモリ素子及びメモリ装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0261895A (ja) * 1988-08-26 1990-03-01 Matsushita Electric Ind Co Ltd 光記憶素子
JP2002076325A (ja) 2000-09-01 2002-03-15 Japan Science & Technology Corp コンダクタンスの制御が可能な電子素子
JP2002141494A (ja) 2000-11-01 2002-05-17 Japan Science & Technology Corp ポイントコンタクト・アレー
JP2002334989A (ja) 2001-05-09 2002-11-22 Japan Science & Technology Corp Ｎｏｔ回路及びそれを用いた電子回路
JP2006173555A (ja) * 2004-11-17 2006-06-29 Toshiba Corp スイッチング素子と線路切り換え装置及び論理回路
WO2006070698A1 (ja) * 2004-12-27 2006-07-06 Nec Corporation スイッチング素子、スイッチング素子の駆動方法及び製造方法、集積回路装置並びにメモリ素子
JP2008000857A (ja) * 2006-06-23 2008-01-10 National Institute For Materials Science 光ナノスイッチ

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2184793A4

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8121444B2 (en) * 2009-04-24 2012-02-21 Hewlett-Packard Development Company, L.P. Optically and electrically actuatable devices

Also Published As

Publication number Publication date
US8320154B2 (en) 2012-11-27
JP5371010B2 (ja) 2013-12-18
EP2184793B1 (en) 2013-02-27
EP2184793A4 (en) 2012-03-07
JPWO2009020210A1 (ja) 2010-11-04
EP2184793A1 (en) 2010-05-12
US20110273920A1 (en) 2011-11-10

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