DE60128818D1 - Antireflexionszusammensetzung - Google Patents

Antireflexionszusammensetzung

Info

Publication number
DE60128818D1
DE60128818D1 DE60128818T DE60128818T DE60128818D1 DE 60128818 D1 DE60128818 D1 DE 60128818D1 DE 60128818 T DE60128818 T DE 60128818T DE 60128818 T DE60128818 T DE 60128818T DE 60128818 D1 DE60128818 D1 DE 60128818D1
Authority
DE
Germany
Prior art keywords
anti reflection
reflection composition
composition
reflection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60128818T
Other languages
English (en)
Other versions
DE60128818T2 (de
Inventor
Anthony Zampini
Manuel Docanto
Robert H Gore
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
Original Assignee
Shipley Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Inc filed Critical Shipley Co Inc
Publication of DE60128818D1 publication Critical patent/DE60128818D1/de
Application granted granted Critical
Publication of DE60128818T2 publication Critical patent/DE60128818T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles
    • Y10T428/254—Polymeric or resinous material

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Paints Or Removers (AREA)
  • Materials For Photolithography (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
DE60128818T 2000-09-19 2001-09-19 Antireflexionszusammensetzung Expired - Lifetime DE60128818T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US23351700P 2000-09-19 2000-09-19
US233517P 2000-09-19
PCT/US2001/029243 WO2002025374A2 (en) 2000-09-19 2001-09-19 Antireflective composition

Publications (2)

Publication Number Publication Date
DE60128818D1 true DE60128818D1 (de) 2007-07-19
DE60128818T2 DE60128818T2 (de) 2008-02-07

Family

ID=22877568

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128818T Expired - Lifetime DE60128818T2 (de) 2000-09-19 2001-09-19 Antireflexionszusammensetzung

Country Status (9)

Country Link
US (1) US6503689B2 (de)
EP (1) EP1319197B1 (de)
JP (1) JP4772268B2 (de)
KR (1) KR100828313B1 (de)
CN (1) CN1316315C (de)
AU (1) AU2001292783A1 (de)
DE (1) DE60128818T2 (de)
TW (1) TWI281940B (de)
WO (1) WO2002025374A2 (de)

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5939236A (en) 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
US20040161735A1 (en) * 1998-11-24 2004-08-19 The University Of Queensland Cryopreservation of oocytes and embryos and methods for producing animals involving the same
TW556047B (en) 2000-07-31 2003-10-01 Shipley Co Llc Coated substrate, method for forming photoresist relief image, and antireflective composition
TW588072B (en) 2000-10-10 2004-05-21 Shipley Co Llc Antireflective porogens
JP4117871B2 (ja) * 2000-11-09 2008-07-16 東京応化工業株式会社 反射防止膜形成用組成物
US7132219B2 (en) * 2001-02-02 2006-11-07 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
US6927266B2 (en) 2001-02-22 2005-08-09 Nissan Chemical Industries, Ltd. Bottom anti-reflective coat forming composition for lithography
US6903175B2 (en) * 2001-03-26 2005-06-07 Shipley Company, L.L.C. Polymer synthesis and films therefrom
TW576859B (en) * 2001-05-11 2004-02-21 Shipley Co Llc Antireflective coating compositions
TW591341B (en) * 2001-09-26 2004-06-11 Shipley Co Llc Coating compositions for use with an overcoated photoresist
US8012670B2 (en) 2002-04-11 2011-09-06 Rohm And Haas Electronic Materials Llc Photoresist systems
US6730454B2 (en) * 2002-04-16 2004-05-04 International Business Machines Corporation Antireflective SiO-containing compositions for hardmask layer
US6852474B2 (en) * 2002-04-30 2005-02-08 Brewer Science Inc. Polymeric antireflective coatings deposited by plasma enhanced chemical vapor deposition
KR100478982B1 (ko) * 2002-05-02 2005-03-25 금호석유화학 주식회사 신규 산발생제 및 이를 함유한 박막 조성물
JP4336310B2 (ja) * 2002-07-11 2009-09-30 インターナショナル・ビジネス・マシーンズ・コーポレーション ハードマスク層としてのシリコン含有反射防止層及びその形成方法
JP4487489B2 (ja) * 2002-09-20 2010-06-23 三菱電機株式会社 埋込材およびこの埋込材を用いた半導体集積回路の製造方法
US20040067437A1 (en) * 2002-10-06 2004-04-08 Shipley Company, L.L.C. Coating compositions for use with an overcoated photoresist
US7501230B2 (en) * 2002-11-04 2009-03-10 Meagley Robert P Photoactive adhesion promoter
KR20040044368A (ko) * 2002-11-20 2004-05-28 쉬플리 캄파니, 엘.엘.씨. 다층 포토레지스트 시스템
JP2004206082A (ja) * 2002-11-20 2004-07-22 Rohm & Haas Electronic Materials Llc 多層フォトレジスト系
US7238462B2 (en) * 2002-11-27 2007-07-03 Tokyo Ohka Kogyo Co., Ltd. Undercoating material for wiring, embedded material, and wiring formation method
GB2400245B (en) * 2003-04-01 2005-09-28 Power Gems Ltd Ignition system for a high-frequency high-intensity discharge lamp system
JP4105036B2 (ja) * 2003-05-28 2008-06-18 信越化学工業株式会社 レジスト下層膜材料ならびにパターン形成方法
US20040242759A1 (en) * 2003-05-30 2004-12-02 Bhave Mandar R. Bottom anti-reflective coating compositions comprising silicon containing polymers to improve adhesion towards photoresists
US6780736B1 (en) * 2003-06-20 2004-08-24 International Business Machines Corporation Method for image reversal of implant resist using a single photolithography exposure and structures formed thereby
US20050015611A1 (en) * 2003-06-30 2005-01-20 Poisner David I. Trusted peripheral mechanism
US7361447B2 (en) * 2003-07-30 2008-04-22 Hynix Semiconductor Inc. Photoresist polymer and photoresist composition containing the same
US20050074688A1 (en) * 2003-10-03 2005-04-07 Toukhy Medhat A. Bottom antireflective coatings
KR100697511B1 (ko) * 2003-10-21 2007-03-20 삼성전자주식회사 광경화성 반도체 나노결정, 반도체 나노결정 패턴형성용 조성물 및 이들을 이용한 반도체 나노결정의 패턴 형성 방법
US7361455B2 (en) * 2004-03-31 2008-04-22 Intel Corporation Anti-reflective coatings
US20070207406A1 (en) * 2004-04-29 2007-09-06 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US20050255410A1 (en) * 2004-04-29 2005-11-17 Guerrero Douglas J Anti-reflective coatings using vinyl ether crosslinkers
US7320855B2 (en) * 2004-11-03 2008-01-22 International Business Machines Corporation Silicon containing TARC/barrier layer
EP1691238A3 (de) 2005-02-05 2009-01-21 Rohm and Haas Electronic Materials, L.L.C. Beschichtungszusammensetzungen zur Verwendung mit einem beschichteten Fotolack
TWI340296B (en) * 2005-03-20 2011-04-11 Rohm & Haas Elect Mat Coating compositions for use with an overcoated photoresist
US7326442B2 (en) * 2005-07-14 2008-02-05 International Business Machines Corporation Antireflective composition and process of making a lithographic structure
US20070015082A1 (en) * 2005-07-14 2007-01-18 International Business Machines Corporation Process of making a lithographic structure using antireflective materials
US8137895B2 (en) * 2005-08-09 2012-03-20 Taiwan Semiconductor Manufacturing Company, Ltd. Structure and method for improving photoresist pattern adhesion
US7544750B2 (en) * 2005-10-13 2009-06-09 International Business Machines Corporation Top antireflective coating composition with low refractive index at 193nm radiation wavelength
US7485573B2 (en) * 2006-02-17 2009-02-03 International Business Machines Corporation Process of making a semiconductor device using multiple antireflective materials
US20070231736A1 (en) * 2006-03-28 2007-10-04 Chen Kuang-Jung J Bottom antireflective coating composition and method for use thereof
US7563563B2 (en) * 2006-04-18 2009-07-21 International Business Machines Corporation Wet developable bottom antireflective coating composition and method for use thereof
US20070275330A1 (en) * 2006-05-25 2007-11-29 International Business Machines Corporation Bottom anti-reflective coating
US7816069B2 (en) * 2006-06-23 2010-10-19 International Business Machines Corporation Graded spin-on organic antireflective coating for photolithography
US7914974B2 (en) 2006-08-18 2011-03-29 Brewer Science Inc. Anti-reflective imaging layer for multiple patterning process
JP2008129080A (ja) * 2006-11-16 2008-06-05 Az Electronic Materials Kk 上面反射防止膜用組成物、およびそれを用いたパターン形成方法
US20120237730A1 (en) * 2006-12-14 2012-09-20 Metin Sitti Dry adhesives and methods for making dry adhesives
US8153346B2 (en) * 2007-02-23 2012-04-10 Fujifilm Electronic Materials, U.S.A., Inc. Thermally cured underlayer for lithographic application
JP4786636B2 (ja) * 2007-12-26 2011-10-05 Ａｚエレクトロニックマテリアルズ株式会社 反射防止膜形成用組成物およびそれを用いたパターン形成方法
KR101647158B1 (ko) 2008-01-29 2016-08-09 브레우어 사이언스 인코포레이션 다중 다크 필드 노출에 의한, 하드마스크 패턴화를 위한 온-트랙 공정
JP5662338B2 (ja) 2008-12-10 2015-01-28 ダウ コーニング コーポレーションＤｏｗ Ｃｏｒｎｉｎｇ Ｃｏｒｐｏｒａｔｉｏｎ シルセスキオキサン樹脂
WO2010068338A1 (en) * 2008-12-10 2010-06-17 Dow Corning Corporation Switchable antireflective coatings
WO2010068337A1 (en) * 2008-12-10 2010-06-17 Dow Corning Corporation Wet-etchable antireflective coatings
US9640396B2 (en) 2009-01-07 2017-05-02 Brewer Science Inc. Spin-on spacer materials for double- and triple-patterning lithography
JPWO2011074494A1 (ja) * 2009-12-14 2013-04-25 日産化学工業株式会社 レジスト下層膜形成組成物
KR101915138B1 (ko) * 2010-10-21 2018-11-06 닛산 가가쿠 가부시키가이샤 Euv 리소그래피용 레지스트 상층막 형성 조성물
JP6041104B2 (ja) * 2011-07-07 2016-12-07 日産化学工業株式会社 脂環式骨格含有カルバゾール樹脂を含むレジスト下層膜形成組成物
JP5846046B2 (ja) * 2011-12-06 2016-01-20 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP5516557B2 (ja) * 2011-12-06 2014-06-11 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP2013254109A (ja) * 2012-06-07 2013-12-19 Az Electronic Materials Mfg Co Ltd 上層膜形成用組成物およびそれを用いたレジストパターン形成方法
US9761449B2 (en) * 2013-12-30 2017-09-12 Taiwan Semiconductor Manufacturing Company, Ltd. Gap filling materials and methods
TWI592760B (zh) * 2014-12-30 2017-07-21 羅門哈斯電子材料韓國有限公司 與經外塗佈之光致抗蝕劑一起使用之塗層組合物
KR102447682B1 (ko) 2015-05-29 2022-09-27 삼성전자주식회사 코팅층 형성 방법, 플라즈마 처리 장치 및 패턴 형성 방법

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57145101A (en) * 1980-12-30 1982-09-08 Nat Res Dev Polymerization
JPH07104601B2 (ja) * 1987-04-06 1995-11-13 三菱製紙株式会社 裏焼き用平版印刷材料
JP2727137B2 (ja) * 1991-03-19 1998-03-11 富士写真フイルム株式会社 感光性転写材料及び多色画像形成方法
JP3057579B2 (ja) * 1991-03-20 2000-06-26 富士通株式会社 露光データ作成方法及びその装置
JPH07253674A (ja) * 1994-03-14 1995-10-03 Shin Etsu Chem Co Ltd 反射防止膜材料
JPH07261401A (ja) * 1994-03-23 1995-10-13 Japan Synthetic Rubber Co Ltd 印刷版材料
JPH0943839A (ja) * 1995-05-25 1997-02-14 Japan Synthetic Rubber Co Ltd 反射防止膜形成用組成物
US5939236A (en) * 1997-02-07 1999-08-17 Shipley Company, L.L.C. Antireflective coating compositions comprising photoacid generators
JP3719811B2 (ja) * 1997-03-27 2005-11-24 ソマール株式会社 反射防止フィルム
JP3202649B2 (ja) * 1997-04-17 2001-08-27 日本電気株式会社 反射防止膜形成用材料およびこれを用いた半導体装置の製造方法
US5919599A (en) 1997-09-30 1999-07-06 Brewer Science, Inc. Thermosetting anti-reflective coatings at deep ultraviolet
JP3965740B2 (ja) * 1997-10-24 2007-08-29 旭硝子株式会社 コーティング組成物
US6190839B1 (en) 1998-01-15 2001-02-20 Shipley Company, L.L.C. High conformality antireflective coating compositions
EP0938026B1 (de) * 1998-02-18 2009-05-27 DSM IP Assets B.V. Fotohärtbare flüssige Harzzusammensetzung
DE69938086T2 (de) * 1998-06-05 2009-01-29 Fujifilm Corporation Antireflektionsschicht und Anzeigegerät mit dieser Schicht
JP3539215B2 (ja) * 1998-06-22 2004-07-07 Ｊｓｒ株式会社 電極の形成方法およびそれに用いられる転写フィルム
JP2000081699A (ja) * 1998-09-04 2000-03-21 Konica Corp 医用ドライフィルム
US20020102483A1 (en) * 1998-09-15 2002-08-01 Timothy Adams Antireflective coating compositions
JP3928278B2 (ja) * 1998-11-16 2007-06-13 Ｊｓｒ株式会社 反射防止膜形成組成物
JP3048569B1 (ja) * 1999-03-08 2000-06-05 理化学研究所 中性子ビ―ム制御装置及び中性子エネルギ―測定装置
US6316165B1 (en) * 1999-03-08 2001-11-13 Shipley Company, L.L.C. Planarizing antireflective coating compositions
US6251521B1 (en) * 1999-08-09 2001-06-26 3M Innovative Properties Company Polymeric compositions

Also Published As

Publication number Publication date
AU2001292783A1 (en) 2002-04-02
TWI281940B (en) 2007-06-01
JP2004511006A (ja) 2004-04-08
CN1316315C (zh) 2007-05-16
CN1628269A (zh) 2005-06-15
EP1319197A2 (de) 2003-06-18
WO2002025374A3 (en) 2002-07-11
KR100828313B1 (ko) 2008-05-08
KR20040004375A (ko) 2004-01-13
US20020076642A1 (en) 2002-06-20
WO2002025374A2 (en) 2002-03-28
DE60128818T2 (de) 2008-02-07
JP4772268B2 (ja) 2011-09-14
EP1319197B1 (de) 2007-06-06
US6503689B2 (en) 2003-01-07

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