DE60128253D1 - Precursor-lösungen und verfahren zur ihrer verwendung - Google Patents

Precursor-lösungen und verfahren zur ihrer verwendung

Info

Publication number
DE60128253D1
DE60128253D1 DE60128253T DE60128253T DE60128253D1 DE 60128253 D1 DE60128253 D1 DE 60128253D1 DE 60128253 T DE60128253 T DE 60128253T DE 60128253 T DE60128253 T DE 60128253T DE 60128253 D1 DE60128253 D1 DE 60128253D1
Authority
DE
Germany
Prior art keywords
precursor solutions
precursor
solutions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60128253T
Other languages
English (en)
Other versions
DE60128253T2 (de
Inventor
Martin W Rupich
Thomas A Kodenkandath
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
American Superconductor Corp
Original Assignee
American Superconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by American Superconductor Corp filed Critical American Superconductor Corp
Application granted granted Critical
Publication of DE60128253D1 publication Critical patent/DE60128253D1/de
Publication of DE60128253T2 publication Critical patent/DE60128253T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/16Oxides
    • C30B29/22Complex oxides
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/005Epitaxial layer growth
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0324Processes for depositing or forming copper oxide superconductor layers from a solution
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10NELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00Superconducting devices
    • H10N60/01Manufacture or treatment
    • H10N60/0268Manufacture or treatment of devices comprising copper oxide
    • H10N60/0296Processes for depositing or forming copper oxide superconductor layers
    • H10N60/0548Processes for depositing or forming copper oxide superconductor layers by deposition and subsequent treatment, e.g. oxidation of pre-deposited material
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00Superconductor technology: apparatus, material, process
    • Y10S505/725Process of making or treating high tc, above 30 k, superconducting shaped material, article, or device
    • Y10S505/734From organometallic precursors, e.g. acetylacetonates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Oxygen, Ozone, And Oxides In General (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
  • Compositions Of Oxide Ceramics (AREA)
DE60128253T 2000-10-23 2001-10-17 Precursor-lösungen und verfahren zur ihrer verwendung Expired - Lifetime DE60128253T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US69440000A 2000-10-23 2000-10-23
US694400 2000-10-23
US09/855,312 US20020056401A1 (en) 2000-10-23 2001-05-14 Precursor solutions and methods of using same
US855312 2001-05-14
PCT/US2001/032229 WO2002035615A2 (en) 2000-10-23 2001-10-17 Precursor solutions and methods of using same

Publications (2)

Publication Number Publication Date
DE60128253D1 true DE60128253D1 (de) 2007-06-14
DE60128253T2 DE60128253T2 (de) 2007-12-20

Family

ID=27105372

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60128253T Expired - Lifetime DE60128253T2 (de) 2000-10-23 2001-10-17 Precursor-lösungen und verfahren zur ihrer verwendung

Country Status (8)

Country Link
US (4) US20020056401A1 (de)
EP (1) EP1334525B1 (de)
JP (1) JP4234424B2 (de)
KR (1) KR100585417B1 (de)
CN (1) CN100502073C (de)
AU (2) AU2002216631B2 (de)
DE (1) DE60128253T2 (de)
WO (1) WO2002035615A2 (de)

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US20030130129A1 (en) * 2001-07-13 2003-07-10 Massachusetts Institute Of Technology Vacuum processing for fabrication of superconducting films fabricated by metal-organic processing
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KR100529602B1 (ko) * 2003-07-18 2005-11-17 한국산업기술대학교 희토류원소계 초전도 산화물을 이용하는 유기금속증착용 전구용액 제조방법 및 유기금속증착법에 의한 박막형 초전도체 제조방법
US20050159298A1 (en) * 2004-01-16 2005-07-21 American Superconductor Corporation Oxide films with nanodot flux pinning centers
EP1655787A1 (de) * 2004-11-03 2006-05-10 Nexans Vorläuferzusammensetzung für auf YBCO basierte Supraleiter
US7261776B2 (en) * 2004-03-30 2007-08-28 American Superconductor Corporation Deposition of buffer layers on textured metal surfaces
US7496390B2 (en) * 2004-08-20 2009-02-24 American Superconductor Corporation Low ac loss filamentary coated superconductors
US7582328B2 (en) * 2004-08-20 2009-09-01 American Superconductor Corporation Dropwise deposition of a patterned oxide superconductor
US7463915B2 (en) * 2004-08-20 2008-12-09 American Superconductor Corporation Stacked filamentary coated superconductors
US7816303B2 (en) 2004-10-01 2010-10-19 American Superconductor Corporation Architecture for high temperature superconductor wire
EP1805817B1 (de) 2004-10-01 2016-11-16 American Superconductor Corporation Supraleitende dickfilme mit verbesserter leistung
EP1655788B1 (de) * 2004-11-03 2009-04-15 Nexans Vorläuferstoff für YBCO-basierte Supraleiter
CN100564312C (zh) * 2004-12-23 2009-12-02 超导技术公司 (RE)Ba2Cu3O7-δ薄膜超导体的RF性质优化的组成
US7763343B2 (en) 2005-03-31 2010-07-27 American Superconductor Corporation Mesh-type stabilizer for filamentary coated superconductors
US7674751B2 (en) * 2006-01-10 2010-03-09 American Superconductor Corporation Fabrication of sealed high temperature superconductor wires
WO2008118127A1 (en) 2006-07-21 2008-10-02 American Superconductor Corporation Low resistance splice for high temperature superconductor wires
US7902120B2 (en) 2006-07-24 2011-03-08 American Superconductor Corporation High temperature superconductors having planar magnetic flux pinning centers and methods for making the same
ES2319228T3 (es) * 2006-10-27 2009-05-05 Nexans Procedimiento para fabricar un conductor electrico superconductivo.
JP4738322B2 (ja) 2006-11-30 2011-08-03 株式会社東芝 酸化物超電導体およびその製造方法
KR100807640B1 (ko) * 2006-12-22 2008-02-28 한국기계연구원 저온 열처리에 의해 이축배향성 완충층을 형성하는전구용액
US8293323B2 (en) * 2007-02-23 2012-10-23 The Penn State Research Foundation Thin metal film conductors and their manufacture
US7893006B2 (en) 2007-03-23 2011-02-22 American Superconductor Corporation Systems and methods for solution-based deposition of metallic cap layers for high temperature superconductor wires
US8195260B2 (en) 2008-07-23 2012-06-05 American Superconductor Corporation Two-sided splice for high temperature superconductor laminated wires
KR20120036816A (ko) * 2009-06-01 2012-04-18 미쓰비시 가가꾸 가부시키가이샤 질화물 반도체 결정 및 그 제조 방법
ES2361707B8 (es) * 2009-12-04 2012-10-30 Consejo Superior De Investigaciones Científicas (Csic) Procedimiento de obtencion de cintas superconductoras a partir de soluciones metalorganicas con bajo contenido en fluor
US8428671B2 (en) 2010-03-31 2013-04-23 American Superconductor Corporation Thick oxide film by single coating
WO2011130699A2 (en) * 2010-04-16 2011-10-20 C3 International, Llc Methods for providing surface treatments in a magnetic field
JP5605750B2 (ja) * 2010-06-03 2014-10-15 住友電気工業株式会社 酸化物超電導薄膜製造用の原料溶液
WO2011155635A1 (ja) * 2010-06-08 2011-12-15 住友金属鉱山株式会社 金属酸化物膜の製造方法及び金属酸化物膜、それを用いた素子、金属酸化物膜付き基板並びにそれを用いたデバイス
JP5649626B2 (ja) 2012-08-31 2015-01-07 株式会社東芝 酸化物超電導体の製造方法
TW201907036A (zh) * 2017-05-30 2019-02-16 美商應用材料股份有限公司 使用aacvd及電偏壓選擇性沉積及蝕刻金屬柱狀體之方法
US11167375B2 (en) 2018-08-10 2021-11-09 The Research Foundation For The State University Of New York Additive manufacturing processes and additively manufactured products
CN112501691B (zh) * 2020-10-23 2021-12-03 北京科技大学 一种亚稳相稀土镍氧化物薄膜的金属有机分解生长方法

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Also Published As

Publication number Publication date
DE60128253T2 (de) 2007-12-20
EP1334525A2 (de) 2003-08-13
EP1334525B1 (de) 2007-05-02
US20040071882A1 (en) 2004-04-15
US20060051600A1 (en) 2006-03-09
US7326434B2 (en) 2008-02-05
WO2002035615A2 (en) 2002-05-02
AU1663102A (en) 2002-05-06
KR100585417B1 (ko) 2006-06-07
JP2004512252A (ja) 2004-04-22
US20080188373A1 (en) 2008-08-07
WO2002035615A3 (en) 2003-03-13
CN100502073C (zh) 2009-06-17
JP4234424B2 (ja) 2009-03-04
US20020056401A1 (en) 2002-05-16
AU2002216631B2 (en) 2006-06-29
CN1503993A (zh) 2004-06-09
US7939126B2 (en) 2011-05-10
KR20030086576A (ko) 2003-11-10

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