DE60106229D1 - Uv-verstärktes silylierungsverfahren zur erhöhung des ätzwiderstands von dünnen resistschichten - Google Patents
Uv-verstärktes silylierungsverfahren zur erhöhung des ätzwiderstands von dünnen resistschichtenInfo
- Publication number
- DE60106229D1 DE60106229D1 DE60106229T DE60106229T DE60106229D1 DE 60106229 D1 DE60106229 D1 DE 60106229D1 DE 60106229 T DE60106229 T DE 60106229T DE 60106229 T DE60106229 T DE 60106229T DE 60106229 D1 DE60106229 D1 DE 60106229D1
- Authority
- DE
- Germany
- Prior art keywords
- reinforced
- increase
- etch resistance
- silylation process
- thin resists
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000000034 method Methods 0.000 title 1
- 238000006884 silylation reaction Methods 0.000 title 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/265—Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
Landscapes
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Inorganic Chemistry (AREA)
- Organic Chemistry (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/565,691 US6451512B1 (en) | 2000-05-01 | 2000-05-01 | UV-enhanced silylation process to increase etch resistance of ultra thin resists |
US565691 | 2000-05-01 | ||
PCT/US2001/012897 WO2001084599A2 (en) | 2000-05-01 | 2001-04-19 | Uv-enhanced silylation process to increase etch resistance of ultra thin resists |
Publications (2)
Publication Number | Publication Date |
---|---|
DE60106229D1 true DE60106229D1 (de) | 2004-11-11 |
DE60106229T2 DE60106229T2 (de) | 2005-02-24 |
Family
ID=24259700
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE60106229T Expired - Lifetime DE60106229T2 (de) | 2000-05-01 | 2001-04-19 | Ozon-verstärktes silylierungsverfahren zur erhöhung des ätzwiderstands von dünnen resistschichten |
Country Status (6)
Country | Link |
---|---|
US (3) | US6451512B1 (de) |
EP (1) | EP1279072B1 (de) |
AU (1) | AU2001253735A1 (de) |
DE (1) | DE60106229T2 (de) |
TW (1) | TW498407B (de) |
WO (1) | WO2001084599A2 (de) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6451512B1 (en) * | 2000-05-01 | 2002-09-17 | Advanced Micro Devices, Inc. | UV-enhanced silylation process to increase etch resistance of ultra thin resists |
AU2001266998A1 (en) * | 2000-06-23 | 2002-01-08 | Honeywell International, Inc. | Method to restore hydrophobicity in dielectric films and materials |
FR2812450B1 (fr) * | 2000-07-26 | 2003-01-10 | France Telecom | Resine, bi-couche de resine pour photolithographie dans l'extreme ultraviolet (euv) et procede de photolithogravure en extreme ultraviolet (euv) |
JP2002163005A (ja) * | 2000-11-29 | 2002-06-07 | Nikon Corp | 制御系の設計方法、制御系、制御系の調整方法及び露光方法 |
US6605519B2 (en) * | 2001-05-02 | 2003-08-12 | Unaxis Usa, Inc. | Method for thin film lift-off processes using lateral extended etching masks and device |
TW495843B (en) * | 2001-05-11 | 2002-07-21 | Macronix Int Co Ltd | Method for reducing photoresist roughness by crosslinking photoresist with deposited material |
US7160671B2 (en) * | 2001-06-27 | 2007-01-09 | Lam Research Corporation | Method for argon plasma induced ultraviolet light curing step for increasing silicon-containing photoresist selectivity |
KR100480611B1 (ko) * | 2002-08-14 | 2005-03-31 | 삼성전자주식회사 | 기상 실릴레이션을 이용한 반도체 소자의 미세 패턴 형성방법 |
CN1742363B (zh) * | 2003-01-25 | 2010-10-13 | 霍尼韦尔国际公司 | 受损电介质材料和电介质膜的修复和恢复 |
US7709371B2 (en) * | 2003-01-25 | 2010-05-04 | Honeywell International Inc. | Repairing damage to low-k dielectric materials using silylating agents |
KR100680944B1 (ko) * | 2003-05-27 | 2007-02-08 | 주식회사 하이닉스반도체 | 반도체 소자의 제조방법 |
US20040259371A1 (en) * | 2003-06-18 | 2004-12-23 | Zhijian Lu | Reduction of resist defects |
US7425505B2 (en) * | 2003-07-23 | 2008-09-16 | Fsi International, Inc. | Use of silyating agents |
US8475666B2 (en) * | 2004-09-15 | 2013-07-02 | Honeywell International Inc. | Method for making toughening agent materials |
US20050118541A1 (en) * | 2003-11-28 | 2005-06-02 | Applied Materials, Inc. | Maintenance of photoresist adhesion and activity on the surface of dielectric ARCS for 90 nm feature sizes |
CN100361275C (zh) * | 2004-10-12 | 2008-01-09 | 联华电子股份有限公司 | 蚀刻工艺以及图案化工艺 |
US7678712B2 (en) * | 2005-03-22 | 2010-03-16 | Honeywell International, Inc. | Vapor phase treatment of dielectric materials |
US7442649B2 (en) * | 2005-03-29 | 2008-10-28 | Lam Research Corporation | Etch with photoresist mask |
US7309659B1 (en) | 2005-04-01 | 2007-12-18 | Advanced Micro Devices, Inc. | Silicon-containing resist to pattern organic low k-dielectrics |
US20070087951A1 (en) * | 2005-10-19 | 2007-04-19 | Hynix Semiconductor Inc. | Thinner composition for inhibiting photoresist from drying |
US20080008973A1 (en) * | 2006-07-10 | 2008-01-10 | Tomohiro Goto | Substrate processing method and substrate processing apparatus |
JP4999419B2 (ja) * | 2006-10-12 | 2012-08-15 | 東京エレクトロン株式会社 | 基板処理方法および基板処理システム、ならびにコンピュータ読取可能な記憶媒体 |
US7851138B2 (en) | 2007-07-19 | 2010-12-14 | Hitachi Global Storage Technologies, Netherlands, B.V. | Patterning a surface comprising silicon and carbon |
US20090174036A1 (en) * | 2008-01-04 | 2009-07-09 | International Business Machines Corporation | Plasma curing of patterning materials for aggressively scaled features |
JP5242508B2 (ja) * | 2009-06-26 | 2013-07-24 | 東京エレクトロン株式会社 | 液処理装置、液処理方法および記憶媒体 |
JP5424848B2 (ja) * | 2009-12-15 | 2014-02-26 | 株式会社東芝 | 半導体基板の表面処理装置及び方法 |
US8492170B2 (en) | 2011-04-25 | 2013-07-23 | Applied Materials, Inc. | UV assisted silylation for recovery and pore sealing of damaged low K films |
US8815752B2 (en) | 2012-11-28 | 2014-08-26 | Micron Technology, Inc. | Methods of forming features in semiconductor device structures |
US9291907B2 (en) | 2012-05-18 | 2016-03-22 | Micron Technology, Inc. | Methods for forming resist features and arrays of aligned, elongate resist features |
KR20170038988A (ko) | 2015-09-30 | 2017-04-10 | 삼성디스플레이 주식회사 | 실란 커플링제 및 이를 이용한 와이어 그리드 패턴의 제조 방법 |
CN111065967B (zh) * | 2017-09-29 | 2023-06-23 | 日本瑞翁株式会社 | 正型抗蚀剂组合物、抗蚀剂膜形成方法及层叠体的制造方法 |
US20190368040A1 (en) * | 2018-06-01 | 2019-12-05 | Asm Ip Holding B.V. | Infiltration apparatus and methods of infiltrating an infiltrateable material |
JP7446097B2 (ja) * | 2019-12-06 | 2024-03-08 | 東京応化工業株式会社 | 表面処理剤及び表面処理方法 |
TWI830502B (zh) * | 2022-11-17 | 2024-01-21 | 家碩科技股份有限公司 | 自動量測光罩載具之流量的治具 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1128793A (en) * | 1964-11-16 | 1968-10-02 | Eastman Kodak Co | Articles |
GB1381294A (en) * | 1971-02-15 | 1975-01-22 | Ecoplastics Ltd | Photodegradable coating compositions for disposable containers |
US4751170A (en) * | 1985-07-26 | 1988-06-14 | Nippon Telegraph And Telephone Corporation | Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method |
US4931351A (en) | 1987-01-12 | 1990-06-05 | Eastman Kodak Company | Bilayer lithographic process |
US5407786A (en) | 1988-08-09 | 1995-04-18 | Kabushiki Kaisha Toshiba | Method of forming a mask on a semiconductor substrate via photosensitive resin deposition, ammonia treatment and selective silylation |
EP0394739A3 (de) * | 1989-04-24 | 1991-04-03 | Siemens Aktiengesellschaft | Verfahren zur masshaltigen Strukturübertragung mit einem Zweilagenresist |
JP2951504B2 (ja) | 1992-06-05 | 1999-09-20 | シャープ株式会社 | シリル化平坦化レジスト及び平坦化方法並びに集積回路デバイスの製造方法 |
KR0170253B1 (ko) | 1992-11-18 | 1999-03-20 | 김광호 | 실리레이션을 이용한 사진식각방법 |
US5563238A (en) * | 1993-08-05 | 1996-10-08 | Arch Development Corporation | Water and UV degradable lactic acid polymers |
US5604073A (en) * | 1994-01-12 | 1997-02-18 | International Business Machines Corporation | Azo dyes as adhesion promotion additive in polydimethylglutarimide |
KR0164007B1 (ko) | 1994-04-06 | 1999-02-01 | 이시다 아키라 | 미세 패턴화된 레지스트막을 가지는 기판의 건조처리방법 및 장치 |
JP3317582B2 (ja) | 1994-06-01 | 2002-08-26 | 菱電セミコンダクタシステムエンジニアリング株式会社 | 微細パターンの形成方法 |
US5707783A (en) | 1995-12-04 | 1998-01-13 | Complex Fluid Systems, Inc. | Mixtures of mono- and DI- or polyfunctional silanes as silylating agents for top surface imaging |
WO1997033199A1 (en) | 1996-03-06 | 1997-09-12 | Clariant International, Ltd. | A process for obtaining a lift-off imaging profile |
KR100192933B1 (ko) * | 1996-06-27 | 1999-06-15 | 김영환 | 미세 감광막 패턴 형성방법 |
DE19721524A1 (de) * | 1997-05-22 | 1998-11-26 | Hsm Gmbh | Verfahren zur Herstellung eines Prägezylinders |
US5877075A (en) | 1997-10-14 | 1999-03-02 | Industrial Technology Research Institute | Dual damascene process using single photoresist process |
US6451512B1 (en) * | 2000-05-01 | 2002-09-17 | Advanced Micro Devices, Inc. | UV-enhanced silylation process to increase etch resistance of ultra thin resists |
-
2000
- 2000-05-01 US US09/565,691 patent/US6451512B1/en not_active Expired - Fee Related
-
2001
- 2001-04-19 DE DE60106229T patent/DE60106229T2/de not_active Expired - Lifetime
- 2001-04-19 AU AU2001253735A patent/AU2001253735A1/en not_active Abandoned
- 2001-04-19 WO PCT/US2001/012897 patent/WO2001084599A2/en active IP Right Grant
- 2001-04-19 EP EP01927263A patent/EP1279072B1/de not_active Expired - Lifetime
- 2001-04-30 TW TW090110325A patent/TW498407B/zh not_active IP Right Cessation
-
2002
- 2002-01-16 US US10/050,438 patent/US6645702B1/en not_active Expired - Fee Related
- 2002-01-16 US US10/050,484 patent/US6746822B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
AU2001253735A1 (en) | 2001-11-12 |
EP1279072A2 (de) | 2003-01-29 |
US6645702B1 (en) | 2003-11-11 |
DE60106229T2 (de) | 2005-02-24 |
US6451512B1 (en) | 2002-09-17 |
WO2001084599A3 (en) | 2002-07-18 |
US6746822B1 (en) | 2004-06-08 |
WO2001084599A2 (en) | 2001-11-08 |
TW498407B (en) | 2002-08-11 |
EP1279072B1 (de) | 2004-10-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60106229D1 (de) | Uv-verstärktes silylierungsverfahren zur erhöhung des ätzwiderstands von dünnen resistschichten | |
DE60103821D1 (de) | Herstellung von Oberflächenmodifitierte Kieselsäure | |
DE60009327D1 (de) | Verbesserte schnittstelle zur verwaltung von verfahrenseichvorrichtungen | |
NO2012018I1 (no) | Canakinumab eller direkte ekvivalenter derav | |
IS2532B (is) | Aðferð til að afsalta sjó | |
ATE354360T1 (de) | Amidoacetonitrile zur bekämpfung von endoparasiten | |
DE60103137D1 (de) | Impstoff zur behandlung von atherosclerosis | |
NO20024869L (no) | Oksygenatomdanningsprosess | |
DE60234760D1 (de) | Phenylindole zur behandlung von hiv | |
FI20011578A0 (fi) | Menetelmä puhtaan sitalopraamin valmistamiseksi | |
AT7110U3 (de) | Verfahren zur herstellung von amlodipinmaleat | |
DE60123238D1 (de) | Zusammensetzungen zur behandlung von autoimmunkrankheiten | |
DE60136477D1 (de) | Retinoide zur behandlung von emphysem | |
DE60126814D1 (de) | Inhalation von stickoxid | |
DE50100948D1 (de) | Herstellung von Organosilanen | |
DE60124473D1 (de) | Ätzflüssigkeitszusammensetzung | |
DE50105735D1 (de) | Chlorzoxazon zur behandlung von psoriasis | |
FI20000194A0 (fi) | Menetelmä kaupankäynnissä | |
DE50213678D1 (de) | Anlage zur Verwertung von Brauchwasser | |
DE60129907D1 (de) | Verfahren zur Reinigung von Isophthalonitril | |
DE60203553D1 (de) | Vollflächiger Druckmodus zur Minimierung des seitlichen Niederschlags | |
DE60005566D1 (de) | Pyranoindole zur glaukombehandlung | |
FI20010472A0 (fi) | Menetelmä alfa-pineenin hydraamiseksi | |
DE60107191D1 (de) | Herstellung von 2-Hydrocarbyl-2-Adamantylacrylaten | |
ATE345818T1 (de) | S-methyl-dihydro-ziprasidone zur behandlung von psychiatrischen störungen. |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: GLOBALFOUNDRIES INC., GRAND CAYMAN, KY |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: GRUENECKER, KINKELDEY, STOCKMAIR & SCHWANHAEUSSER, |