DE60043686D1 - Verfahren zur Reinigung von Substratoberflächen nach einer Ätzstufe - Google Patents

Verfahren zur Reinigung von Substratoberflächen nach einer Ätzstufe

Info

Publication number
DE60043686D1
DE60043686D1 DE60043686T DE60043686T DE60043686D1 DE 60043686 D1 DE60043686 D1 DE 60043686D1 DE 60043686 T DE60043686 T DE 60043686T DE 60043686 T DE60043686 T DE 60043686T DE 60043686 D1 DE60043686 D1 DE 60043686D1
Authority
DE
Germany
Prior art keywords
brush
oxide layer
via feature
station
scrubbing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043686T
Other languages
English (en)
Inventor
Jeffrey J Farber
Helmuth W Treichel
Allan M Radman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60043686D1 publication Critical patent/DE60043686D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Drying Of Semiconductors (AREA)
  • Cleaning In General (AREA)
  • Weting (AREA)
DE60043686T 1999-12-09 2000-11-27 Verfahren zur Reinigung von Substratoberflächen nach einer Ätzstufe Expired - Lifetime DE60043686D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/458,550 US6187684B1 (en) 1999-12-09 1999-12-09 Methods for cleaning substrate surfaces after etch operations

Publications (1)

Publication Number Publication Date
DE60043686D1 true DE60043686D1 (de) 2010-03-04

Family

ID=23821214

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043686T Expired - Lifetime DE60043686D1 (de) 1999-12-09 2000-11-27 Verfahren zur Reinigung von Substratoberflächen nach einer Ätzstufe

Country Status (6)

Country Link
US (1) US6187684B1 (de)
EP (1) EP1107301B1 (de)
JP (1) JP4891475B2 (de)
AT (1) ATE455368T1 (de)
DE (1) DE60043686D1 (de)
TW (1) TW499719B (de)

Families Citing this family (35)

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Publication number Priority date Publication date Assignee Title
EP1077474A3 (de) 1999-08-14 2004-05-12 Applied Materials, Inc. Rückseite ätzen in einem Schrubber
US6432618B1 (en) * 2000-02-11 2002-08-13 Advanced Micro Devices, Inc. Method for forming high quality multiple thickness oxide layers by reducing descum induced defects
US6416391B1 (en) * 2000-02-28 2002-07-09 Seh America, Inc. Method of demounting silicon wafers after polishing
CN100418011C (zh) * 2001-01-08 2008-09-10 国际商业机器公司 微结构的制造方法
TW525402B (en) 2001-01-18 2003-03-21 Semiconductor Energy Lab Process for producing a light emitting device
SG102681A1 (en) 2001-02-19 2004-03-26 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
US6720198B2 (en) * 2001-02-19 2004-04-13 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and manufacturing method thereof
US6951823B2 (en) * 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
US20030011018A1 (en) * 2001-07-13 2003-01-16 Hurley Kelly T. Flash floating gate using epitaxial overgrowth
US6676493B1 (en) 2001-12-26 2004-01-13 Lam Research Corporation Integrated planarization and clean wafer processing system
US6949411B1 (en) 2001-12-27 2005-09-27 Lam Research Corporation Method for post-etch and strip residue removal on coral films
US20030235998A1 (en) * 2002-06-24 2003-12-25 Ming-Chung Liang Method for eliminating standing waves in a photoresist profile
SG130013A1 (en) * 2002-07-25 2007-03-20 Semiconductor Energy Lab Method of fabricating light emitting device
US6764385B2 (en) * 2002-07-29 2004-07-20 Nanoclean Technologies, Inc. Methods for resist stripping and cleaning surfaces substantially free of contaminants
US7066789B2 (en) * 2002-07-29 2006-06-27 Manoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7297286B2 (en) * 2002-07-29 2007-11-20 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7101260B2 (en) * 2002-07-29 2006-09-05 Nanoclean Technologies, Inc. Methods for resist stripping and other processes for cleaning surfaces substantially free of contaminants
US7134941B2 (en) * 2002-07-29 2006-11-14 Nanoclean Technologies, Inc. Methods for residue removal and corrosion prevention in a post-metal etch process
CN100466285C (zh) * 2002-09-11 2009-03-04 株式会社半导体能源研究所 发光装置及其制造方法
US7224035B1 (en) * 2002-10-07 2007-05-29 Zyvex Corporation Apparatus and fabrication methods for incorporating sub-millimeter, high-resistivity mechanical components with low-resistivity conductors while maintaining electrical isolation therebetween
JP2004165241A (ja) * 2002-11-11 2004-06-10 Sanyo Electric Co Ltd 半導体装置及びその製造方法
JP2004259882A (ja) * 2003-02-25 2004-09-16 Seiko Epson Corp 半導体装置及びその製造方法
US6936544B2 (en) * 2003-03-11 2005-08-30 Taiwan Semiconductor Manufacturing Co., Ltd. Method of removing metal etching residues following a metal etchback process to improve a CMP process
US20040256354A1 (en) * 2003-06-18 2004-12-23 Raluca Dinu Method of removing etch veils from microstructures
US20050011535A1 (en) * 2003-07-18 2005-01-20 Randy Skocypec Cleaning semiconductor wafers
KR100562302B1 (ko) * 2003-12-27 2006-03-22 동부아남반도체 주식회사 멀티 화학액 처리 단계를 이용한 랜덤 폴리머 제거 방법
US20050252547A1 (en) * 2004-05-11 2005-11-17 Applied Materials, Inc. Methods and apparatus for liquid chemical delivery
KR100606906B1 (ko) * 2004-12-29 2006-08-01 동부일렉트로닉스 주식회사 씨모스 이미지 센서의 포토다이오드 및 그 제조방법
KR100672664B1 (ko) * 2004-12-29 2007-01-24 동부일렉트로닉스 주식회사 버티컬 씨모스 이미지 센서의 제조방법
KR100660319B1 (ko) * 2004-12-30 2006-12-22 동부일렉트로닉스 주식회사 씨모스 이미지센서 및 그의 제조방법
US7535031B2 (en) * 2005-09-13 2009-05-19 Philips Lumiled Lighting, Co. Llc Semiconductor light emitting device with lateral current injection in the light emitting region
TW201442122A (zh) * 2012-12-25 2014-11-01 Ps4 Luxco Sarl 半導體裝置之製造方法
US9048268B2 (en) 2013-03-05 2015-06-02 Taiwan Semiconductor Manufacturing Co., Ltd. Method and equipment for removing photoresist residue after dry etch
JP6975937B2 (ja) * 2017-09-28 2021-12-01 パナソニックＩｐマネジメント株式会社 素子チップの製造方法及び装置
KR102573572B1 (ko) * 2017-12-20 2023-09-01 삼성전자주식회사 웨이퍼 세정 장치

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06177089A (ja) * 1992-12-04 1994-06-24 Fujitsu Ltd 半導体装置の製造方法
JP3353462B2 (ja) * 1994-06-10 2002-12-03 ソニー株式会社 ドライエッチング方法
JPH08274077A (ja) * 1995-03-31 1996-10-18 Sony Corp プラズマエッチング方法
JP3353532B2 (ja) * 1995-04-13 2002-12-03 ソニー株式会社 トレンチエッチング方法
AU7264596A (en) * 1995-10-13 1997-04-30 Ontrak Systems, Inc. Method and apparatus for chemical delivery through the brush
US6004839A (en) * 1996-01-17 1999-12-21 Nec Corporation Semiconductor device with conductive plugs
DE19631363C1 (de) * 1996-08-02 1998-02-12 Siemens Ag Wässrige Reinigungslösung für ein Halbleitersubstrat
JPH1055993A (ja) * 1996-08-09 1998-02-24 Hitachi Ltd 半導体素子製造用洗浄液及びそれを用いた半導体素子の製造方法
US6024106A (en) * 1998-11-19 2000-02-15 United Microelectronics Corp. Post-CMP wafer clean process

Also Published As

Publication number Publication date
US6187684B1 (en) 2001-02-13
EP1107301A3 (de) 2002-03-06
ATE455368T1 (de) 2010-01-15
TW499719B (en) 2002-08-21
EP1107301A2 (de) 2001-06-13
JP2001237236A (ja) 2001-08-31
JP4891475B2 (ja) 2012-03-07
EP1107301B1 (de) 2010-01-13

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