DE60043454D1 - Methode und apparat zur endpunktbestimmung eines photolackentfernungsprozesses - Google Patents

Methode und apparat zur endpunktbestimmung eines photolackentfernungsprozesses

Info

Publication number
DE60043454D1
DE60043454D1 DE60043454T DE60043454T DE60043454D1 DE 60043454 D1 DE60043454 D1 DE 60043454D1 DE 60043454 T DE60043454 T DE 60043454T DE 60043454 T DE60043454 T DE 60043454T DE 60043454 D1 DE60043454 D1 DE 60043454D1
Authority
DE
Germany
Prior art keywords
photolack
removal process
point determination
final point
final
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60043454T
Other languages
English (en)
Inventor
Tuqiang Ni
Wenli Collison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Application granted granted Critical
Publication of DE60043454D1 publication Critical patent/DE60043454D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01J37/32963—End-point detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H01L22/26—Acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection, in-situ thickness measurement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3342—Resist stripping

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE60043454T 1999-12-21 2000-12-19 Methode und apparat zur endpunktbestimmung eines photolackentfernungsprozesses Expired - Lifetime DE60043454D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/468,742 US6451158B1 (en) 1999-12-21 1999-12-21 Apparatus for detecting the endpoint of a photoresist stripping process
PCT/US2000/034655 WO2001047009A2 (en) 1999-12-21 2000-12-19 Method and apparatus for detecting the endpoint of a photoresist stripping process

Publications (1)

Publication Number Publication Date
DE60043454D1 true DE60043454D1 (de) 2010-01-14

Family

ID=23861050

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60043454T Expired - Lifetime DE60043454D1 (de) 1999-12-21 2000-12-19 Methode und apparat zur endpunktbestimmung eines photolackentfernungsprozesses

Country Status (8)

Country Link
US (2) US6451158B1 (de)
EP (1) EP1247295B1 (de)
JP (1) JP4763955B2 (de)
KR (1) KR100767224B1 (de)
CN (1) CN1189931C (de)
AU (1) AU2443901A (de)
DE (1) DE60043454D1 (de)
WO (1) WO2001047009A2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6451158B1 (en) * 1999-12-21 2002-09-17 Lam Research Corporation Apparatus for detecting the endpoint of a photoresist stripping process
GB0206158D0 (en) * 2002-03-15 2002-04-24 Intellemetrics Ltd Use of light emitting chemical reactions for control of semiconductor production processes
US6862491B2 (en) * 2002-05-22 2005-03-01 Applied Materials Israel, Ltd. System and method for process variation monitor
US20060006139A1 (en) * 2003-05-09 2006-01-12 David Johnson Selection of wavelengths for end point in a time division multiplexed process
CN100401491C (zh) * 2003-05-09 2008-07-09 优利讯美国有限公司 时分复用处理中的包络跟随器终点检测
US20040235299A1 (en) * 2003-05-22 2004-11-25 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US10714436B2 (en) 2012-12-12 2020-07-14 Lam Research Corporation Systems and methods for achieving uniformity across a redistribution layer
US9043743B2 (en) 2013-10-22 2015-05-26 International Business Machines Corporation Automated residual material detection
CN110879198B (zh) * 2019-11-25 2022-10-21 中国科学院微电子研究所 一种极紫外光刻胶放气污染测试系统

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3647387A (en) 1970-03-19 1972-03-07 Stanford Research Inst Detection device
US4312732A (en) * 1976-08-31 1982-01-26 Bell Telephone Laboratories, Incorporated Method for the optical monitoring of plasma discharge processing operations
US4528438A (en) * 1976-09-16 1985-07-09 Northern Telecom Limited End point control in plasma etching
JPS5448172A (en) * 1977-09-24 1979-04-16 Tokyo Ouka Kougiyou Kk Plasma reaction processor
US4201579A (en) 1978-06-05 1980-05-06 Motorola, Inc. Method for removing photoresist by hydrogen plasma
JPS60136229A (ja) * 1983-12-23 1985-07-19 Nec Corp 剥離時間の制御方法
US4699689A (en) * 1985-05-17 1987-10-13 Emergent Technologies Corporation Method and apparatus for dry processing of substrates
US4812201A (en) 1986-07-25 1989-03-14 Tokyo Electron Limited Method of ashing layers, and apparatus for ashing layers
JP2600198B2 (ja) 1987-09-30 1997-04-16 株式会社島津製作所 窒素酸化物測定装置
JPH0777212B2 (ja) 1989-01-30 1995-08-16 大日本スクリーン製造株式会社 基板のレジスト除去洗浄方法
JPH04164316A (ja) * 1990-10-29 1992-06-10 Nec Corp ホトレジスト除去装置
JPH0547717A (ja) * 1991-01-22 1993-02-26 Tokyo Electron Ltd プラズマ表面処理の終点検出方法及びプラズマ表面処理装置の状態監視方法
JPH04304632A (ja) * 1991-04-01 1992-10-28 Sony Corp レジスト除去方法
JPH056873A (ja) * 1991-06-26 1993-01-14 Oki Electric Ind Co Ltd エツチング終点検出方法およびエツチング装置
US5877032A (en) 1995-10-12 1999-03-02 Lucent Technologies Inc. Process for device fabrication in which the plasma etch is controlled by monitoring optical emission
US5308447A (en) * 1992-06-09 1994-05-03 Luxtron Corporation Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
US5499733A (en) * 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5453157A (en) * 1994-05-16 1995-09-26 Texas Instruments Incorporated Low temperature anisotropic ashing of resist for semiconductor fabrication
US5672239A (en) * 1995-05-10 1997-09-30 Tegal Corporation Integrated semiconductor wafer processing system
JPH0936103A (ja) 1995-07-18 1997-02-07 Ulvac Japan Ltd 半導体ウェハのエッチング及びレジスト除去のための方法並びに装置
US5963336A (en) * 1995-10-10 1999-10-05 American Air Liquide Inc. Chamber effluent monitoring system and semiconductor processing system comprising absorption spectroscopy measurement system, and methods of use
US5882489A (en) * 1996-04-26 1999-03-16 Ulvac Technologies, Inc. Processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US5795831A (en) 1996-10-16 1998-08-18 Ulvac Technologies, Inc. Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US5871658A (en) * 1997-01-13 1999-02-16 Taiwan Semiconductor Manufacturing Company, Ltd. Optical emisson spectroscopy (OES) method for monitoring and controlling plasma etch process when forming patterned layers
JPH10261619A (ja) * 1997-03-19 1998-09-29 Hitachi Ltd プラズマ処理装置
JP2925535B2 (ja) * 1997-05-22 1999-07-28 キヤノン株式会社 環状導波路を有するマイクロ波供給器及びそれを備えたプラズマ処理装置及び処理方法
US5969805A (en) * 1997-11-04 1999-10-19 Micron Technology, Inc. Method and apparatus employing external light source for endpoint detection
US6704107B1 (en) * 1997-11-04 2004-03-09 Micron Technology, Inc. Method and apparatus for automated, in situ material detection using filtered fluoresced, reflected, or absorbed light
JPH11176815A (ja) * 1997-12-15 1999-07-02 Ricoh Co Ltd ドライエッチングの終点判定方法およびドライエッチング装置
JP3252789B2 (ja) * 1998-04-03 2002-02-04 日本電気株式会社 エッチング方法
US6335531B1 (en) * 1999-04-06 2002-01-01 Micron Technology, Inc. Modification of resist and/or resist processing with fluorescence detection
US6451158B1 (en) * 1999-12-21 2002-09-17 Lam Research Corporation Apparatus for detecting the endpoint of a photoresist stripping process

Also Published As

Publication number Publication date
KR100767224B1 (ko) 2007-10-17
CN1413359A (zh) 2003-04-23
JP4763955B2 (ja) 2011-08-31
CN1189931C (zh) 2005-02-16
KR20020061006A (ko) 2002-07-19
JP2003518740A (ja) 2003-06-10
US7077971B2 (en) 2006-07-18
WO2001047009A3 (en) 2002-01-31
EP1247295A2 (de) 2002-10-09
WO2001047009A2 (en) 2001-06-28
US20020148811A1 (en) 2002-10-17
AU2443901A (en) 2001-07-03
US6451158B1 (en) 2002-09-17
EP1247295B1 (de) 2009-12-02

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