DE60041214D1 - Kompositteilchen und Verfahren zu Ihrer Herstellung, wässrige Dispersion zum chemisch-mechanischen Polieren und Verfahren zur Herstellung von Halbleiteranordnungen - Google Patents

Kompositteilchen und Verfahren zu Ihrer Herstellung, wässrige Dispersion zum chemisch-mechanischen Polieren und Verfahren zur Herstellung von Halbleiteranordnungen

Info

Publication number
DE60041214D1
DE60041214D1 DE60041214T DE60041214T DE60041214D1 DE 60041214 D1 DE60041214 D1 DE 60041214D1 DE 60041214 T DE60041214 T DE 60041214T DE 60041214 T DE60041214 T DE 60041214T DE 60041214 D1 DE60041214 D1 DE 60041214D1
Authority
DE
Germany
Prior art keywords
preparation
production
semiconductor devices
aqueous dispersion
mechanical polishing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60041214T
Other languages
English (en)
Inventor
Hiroyuki Yano
Gaku Minamihaba
Yukiteru Matsui
Katsuya Okumura
Masayuki Motonari
Masayuki Hattori
Akira Iio
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
JSR Corp
Original Assignee
Toshiba Corp
JSR Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP990299A external-priority patent/JP4041236B2/ja
Priority claimed from JP990699A external-priority patent/JP4038912B2/ja
Application filed by Toshiba Corp, JSR Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE60041214D1 publication Critical patent/DE60041214D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G83/00—Macromolecular compounds not provided for in groups C08G2/00 - C08G81/00
    • C08G83/001—Macromolecular compounds containing organic and inorganic sequences, e.g. organic polymers grafted onto silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/12—Powdering or granulating
    • C08J3/128—Polymer particles coated by inorganic and non-macromolecular organic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/34—Silicon-containing compounds
    • C08K3/36—Silica
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/04—Oxygen-containing compounds
    • C08K5/05—Alcohols; Metal alcoholates
    • C08K5/057—Metal alcoholates
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1436—Composite particles, e.g. coated particles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31051—Planarisation of the insulating layers
    • H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/013—Additives applied to the surface of polymers or polymer particles

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Composite Materials (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Silicon Compounds (AREA)
DE60041214T 1999-01-18 2000-01-18 Kompositteilchen und Verfahren zu Ihrer Herstellung, wässrige Dispersion zum chemisch-mechanischen Polieren und Verfahren zur Herstellung von Halbleiteranordnungen Expired - Lifetime DE60041214D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP990299A JP4041236B2 (ja) 1999-01-18 1999-01-18 半導体装置の製造に用いる化学機械研磨用複合粒子及びその製造方法並びにそれを用いる化学機械研磨方法
JP990699A JP4038912B2 (ja) 1999-01-18 1999-01-18 複合粒子を含有する研磨剤及び研磨剤用複合粒子の製造方法

Publications (1)

Publication Number Publication Date
DE60041214D1 true DE60041214D1 (de) 2009-02-12

Family

ID=26344717

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60041214T Expired - Lifetime DE60041214D1 (de) 1999-01-18 2000-01-18 Kompositteilchen und Verfahren zu Ihrer Herstellung, wässrige Dispersion zum chemisch-mechanischen Polieren und Verfahren zur Herstellung von Halbleiteranordnungen

Country Status (5)

Country Link
US (1) US6454819B1 (de)
EP (2) EP1020488B1 (de)
KR (1) KR100447551B1 (de)
DE (1) DE60041214D1 (de)
TW (1) TWI286151B (de)

Families Citing this family (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2796086B1 (fr) * 1999-07-06 2002-03-15 Rhodianyl Articles files resistant a l'abrasion
TWI254070B (en) * 1999-08-18 2006-05-01 Jsr Corp Aqueous dispersion for chemical mechanical polishing
JP4075247B2 (ja) * 1999-09-30 2008-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP2001267273A (ja) 2000-01-11 2001-09-28 Sumitomo Chem Co Ltd 金属用研磨材、研磨組成物及び研磨方法
JP2001269859A (ja) * 2000-03-27 2001-10-02 Jsr Corp 化学機械研磨用水系分散体
JP4123685B2 (ja) * 2000-05-18 2008-07-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP3837277B2 (ja) * 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
JP2002075927A (ja) 2000-08-24 2002-03-15 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6468137B1 (en) 2000-09-07 2002-10-22 Cabot Microelectronics Corporation Method for polishing a memory or rigid disk with an oxidized halide-containing polishing system
JP3768402B2 (ja) * 2000-11-24 2006-04-19 Ｎｅｃエレクトロニクス株式会社 化学的機械的研磨用スラリー
JP2002164307A (ja) * 2000-11-24 2002-06-07 Fujimi Inc 研磨用組成物およびそれを用いた研磨方法
US6811680B2 (en) 2001-03-14 2004-11-02 Applied Materials Inc. Planarization of substrates using electrochemical mechanical polishing
US7232514B2 (en) 2001-03-14 2007-06-19 Applied Materials, Inc. Method and composition for polishing a substrate
US6899804B2 (en) * 2001-12-21 2005-05-31 Applied Materials, Inc. Electrolyte composition and treatment for electrolytic chemical mechanical polishing
US7160432B2 (en) 2001-03-14 2007-01-09 Applied Materials, Inc. Method and composition for polishing a substrate
US6568997B2 (en) 2001-04-05 2003-05-27 Rodel Holdings, Inc. CMP polishing composition for semiconductor devices containing organic polymer particles
US20020173243A1 (en) * 2001-04-05 2002-11-21 Costas Wesley D. Polishing composition having organic polymer particles
TW584658B (en) 2001-04-12 2004-04-21 Rodel Inc Polishing composition having a surfactant
US6656241B1 (en) * 2001-06-14 2003-12-02 Ppg Industries Ohio, Inc. Silica-based slurry
US6692546B2 (en) * 2001-08-14 2004-02-17 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
US7029373B2 (en) * 2001-08-14 2006-04-18 Advanced Technology Materials, Inc. Chemical mechanical polishing compositions for metal and associated materials and method of using same
EP2003181A3 (de) 2001-09-19 2009-04-15 TDK Corporation Künstliche Fingerabdruckflüssigkeit, entsprechendes Prüfverfahren für optische Informationsträger sowie optischer Informationsträger
US7077880B2 (en) 2004-01-16 2006-07-18 Dupont Air Products Nanomaterials Llc Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
US6817927B2 (en) 2001-10-19 2004-11-16 Eastman Kodak Company Method of removing material from an external surface using core/shell particles
JP3692067B2 (ja) 2001-11-30 2005-09-07 株式会社東芝 銅のｃｍｐ用研磨スラリーおよびそれを用いた半導体装置の製造方法
JP4187497B2 (ja) 2002-01-25 2008-11-26 Ｊｓｒ株式会社 半導体基板の化学機械研磨方法
US20030162398A1 (en) 2002-02-11 2003-08-28 Small Robert J. Catalytic composition for chemical-mechanical polishing, method of using same, and substrate treated with same
US7513920B2 (en) 2002-02-11 2009-04-07 Dupont Air Products Nanomaterials Llc Free radical-forming activator attached to solid and used to enhance CMP formulations
US20030168627A1 (en) * 2002-02-22 2003-09-11 Singh Rajiv K. Slurry and method for chemical mechanical polishing of metal structures including refractory metal based barrier layers
US6936543B2 (en) * 2002-06-07 2005-08-30 Cabot Microelectronics Corporation CMP method utilizing amphiphilic nonionic surfactants
US6811474B2 (en) * 2002-07-19 2004-11-02 Cabot Microelectronics Corporation Polishing composition containing conducting polymer
KR100495975B1 (ko) * 2002-09-25 2005-06-16 주식회사 동진쎄미켐 텅스텐 금속막 연마용 화학-기계적 연마 슬러리 조성물
JP2004193495A (ja) * 2002-12-13 2004-07-08 Toshiba Corp 化学的機械的研磨用スラリーおよびこれを用いた半導体装置の製造方法
US6769961B1 (en) * 2003-01-15 2004-08-03 Lam Research Corporation Chemical mechanical planarization (CMP) apparatus
WO2004068570A1 (ja) * 2003-01-31 2004-08-12 Hitachi Chemical Co., Ltd. Cmp研磨剤及び研磨方法
US6918820B2 (en) * 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use
US7044836B2 (en) 2003-04-21 2006-05-16 Cabot Microelectronics Corporation Coated metal oxide particles for CMP
TWI292931B (en) * 2003-05-12 2008-01-21 Jsr Corp Chemical mechanical polishing agent kit and chemical mechanical polishing method using the same
JP2004342751A (ja) * 2003-05-14 2004-12-02 Toshiba Corp Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
US7037350B2 (en) 2003-07-14 2006-05-02 Da Nanomaterials L.L.C. Composition for chemical-mechanical polishing and method of using same
US20050022456A1 (en) * 2003-07-30 2005-02-03 Babu S. V. Polishing slurry and method for chemical-mechanical polishing of copper
US7186653B2 (en) * 2003-07-30 2007-03-06 Climax Engineered Materials, Llc Polishing slurries and methods for chemical mechanical polishing
JP4707311B2 (ja) * 2003-08-08 2011-06-22 花王株式会社 磁気ディスク用基板
JP2005093785A (ja) * 2003-09-18 2005-04-07 Toshiba Corp Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
US6939211B2 (en) * 2003-10-09 2005-09-06 Micron Technology, Inc. Planarizing solutions including abrasive elements, and methods for manufacturing and using such planarizing solutions
US20070082456A1 (en) * 2003-11-14 2007-04-12 Nobuo Uotani Polishing composition and polishing method
CN101311205A (zh) * 2004-07-23 2008-11-26 日立化成工业株式会社 Cmp研磨剂以及衬底的研磨方法
US7709053B2 (en) 2004-07-29 2010-05-04 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Method of manufacturing of polymer-coated particles for chemical mechanical polishing
US7182798B2 (en) 2004-07-29 2007-02-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polymer-coated particles for chemical mechanical polishing
CN101032001B (zh) * 2004-09-28 2011-12-28 日立化成工业株式会社 Cmp抛光剂以及衬底的抛光方法
US7524347B2 (en) * 2004-10-28 2009-04-28 Cabot Microelectronics Corporation CMP composition comprising surfactant
JP4811565B2 (ja) * 2005-03-31 2011-11-09 Ｊｓｒ株式会社 多孔質表面を有する磁性粒子およびその製造方法、生化学用担体、ならびにビオチン類結合用粒子
TWI361218B (en) * 2005-04-14 2012-04-01 Showa Denko Kk Polishing composition
KR101332302B1 (ko) * 2005-06-06 2013-11-25 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 단일 플래튼 처리를 위한 방법 및 일체형 화학적 기계적연마 조성물
US7494670B2 (en) * 2005-06-10 2009-02-24 United States Of America As Represented By The Secretary Of The Navy Composition and process for removing and preventing mildew and fungal growth
US7316977B2 (en) * 2005-08-24 2008-01-08 Air Products And Chemicals, Inc. Chemical-mechanical planarization composition having ketooxime compounds and associated method for use
US20070068902A1 (en) * 2005-09-29 2007-03-29 Yasushi Matsunami Polishing composition and polishing method
JP2007157841A (ja) * 2005-12-01 2007-06-21 Toshiba Corp Ｃｍｐ用水系分散液、研磨方法、および半導体装置の製造方法
US7524516B2 (en) * 2006-01-26 2009-04-28 The United States Of America As Represented By The Secretary Of The Navy Corrosion inhibiting mildew remover kit
EP1813641B1 (de) * 2006-01-30 2016-12-14 Imec Verfahren zur verbesserung der mechanischen eigenschaften von polymerteilchen und dessen verwendung
US9120952B2 (en) * 2006-10-27 2015-09-01 University Of South Florida Polymeric microgels for chemical mechanical planarization (CMP) processing
BRPI0808074A2 (pt) * 2007-02-14 2014-08-05 Mallinckrodt Baker Inc Formulações com base em oxometalato ativado por peróxido para remoção de resíduo de gravação à água forte
SG184772A1 (en) 2007-09-21 2012-10-30 Cabot Microelectronics Corp Polishing composition and method utilizing abrasive particles treated with an aminosilane
KR100949250B1 (ko) 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
US7922926B2 (en) 2008-01-08 2011-04-12 Cabot Microelectronics Corporation Composition and method for polishing nickel-phosphorous-coated aluminum hard disks
US7959695B2 (en) * 2008-03-21 2011-06-14 Saint-Gobain Ceramics & Plastics, Inc. Fixed abrasive articles utilizing coated abrasive particles
JP2009267367A (ja) * 2008-03-31 2009-11-12 Toshiba Corp 半導体装置の製造方法
CN102441819B (zh) * 2011-10-20 2014-03-19 天津理工大学 一种用于硫系相变材料的化学机械抛光方法
JP2013092748A (ja) 2011-10-26 2013-05-16 Cabot Corp 複合体粒子を含むトナー添加剤
US8778212B2 (en) * 2012-05-22 2014-07-15 Cabot Microelectronics Corporation CMP composition containing zirconia particles and method of use
US9039914B2 (en) 2012-05-23 2015-05-26 Cabot Microelectronics Corporation Polishing composition for nickel-phosphorous-coated memory disks
CN104619754B (zh) * 2012-12-28 2017-06-09 积水化学工业株式会社 有机无机杂化粒子、导电性粒子、导电材料及连接结构体
CN105264647B (zh) * 2013-06-07 2018-01-09 福吉米株式会社 硅晶圆研磨用组合物
CN104371553B (zh) * 2013-08-14 2017-10-13 安集微电子（上海）有限公司 一种化学机械抛光液以及应用
CN104371550B (zh) * 2013-08-14 2018-02-09 安集微电子（上海）有限公司 一种用于抛光硅材料的化学机械抛光液
KR101916555B1 (ko) 2013-12-20 2018-11-07 캐보트 코포레이션 화학적 기계적 평탄화를 위한 금속 산화물-중합체 복합 입자
JP6466974B2 (ja) * 2014-06-25 2019-02-06 キャボット マイクロエレクトロニクス コーポレイション 化学機械研磨組成物の製造方法
US10160884B2 (en) 2015-03-23 2018-12-25 Versum Materials Us, Llc Metal compound chemically anchored colloidal particles and methods of production and use thereof
CN110577823B (zh) * 2018-08-20 2021-10-12 蓝思科技（长沙）有限公司 纳米磨料、抛光液及制备方法和应用
KR102396281B1 (ko) * 2021-04-14 2022-05-10 성균관대학교산학협력단 연마용 조성물 및 이의 제조방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR940005965B1 (ko) * 1991-09-30 1994-06-25 삼성전자 주식회사 이미징 장치의 마이크로 렌즈 제조방법
JP3265653B2 (ja) * 1992-11-12 2002-03-11 ジェイエスアール株式会社 複合粒子、中空粒子とそれらの製造方法
JP3172008B2 (ja) 1993-09-17 2001-06-04 株式会社東芝 半導体装置の製造方法
CA2132288A1 (en) * 1993-10-14 1995-04-15 W. Stuart Bigham Inorganic particles coated with organic polymeric binders, composite sheets including same, and methods of making said coated particles
US5683501A (en) * 1993-11-09 1997-11-04 Nippon Shokubai Co., Ltd. Compound fine particles and composition for forming film
FR2745816A1 (fr) 1996-03-06 1997-09-12 Rhone Poulenc Chimie Particules composites comprenant un polymere organique et un oxyde, particules creuses a base d'oxyde, leur preparation et leurs utilisations
JP2806350B2 (ja) 1996-03-14 1998-09-30 日本電気株式会社 パッチ型アレイアンテナ装置
JPH09285957A (ja) 1996-04-18 1997-11-04 Hitachi Ltd 研磨材、それを用いた研磨方法および装置
US5783489A (en) * 1996-09-24 1998-07-21 Cabot Corporation Multi-oxidizer slurry for chemical mechanical polishing
US5876490A (en) 1996-12-09 1999-03-02 International Business Machines Corporatin Polish process and slurry for planarization
JP3915042B2 (ja) 1997-02-18 2007-05-16 三井化学株式会社 研磨材及び研磨方法
JPH10270400A (ja) 1997-03-28 1998-10-09 Sumitomo Chem Co Ltd 半導体装置製造用研磨剤及び該研磨剤の製造方法

Also Published As

Publication number Publication date
TWI286151B (en) 2007-09-01
EP1020488A2 (de) 2000-07-19
EP1683821A1 (de) 2006-07-26
KR100447551B1 (ko) 2004-09-08
KR20000053505A (ko) 2000-08-25
US6454819B1 (en) 2002-09-24
EP1020488A3 (de) 2001-05-02
EP1683821B1 (de) 2013-01-02
EP1020488B1 (de) 2008-12-31

Similar Documents

Publication Publication Date Title
DE60041214D1 (de) Kompositteilchen und Verfahren zu Ihrer Herstellung, wässrige Dispersion zum chemisch-mechanischen Polieren und Verfahren zur Herstellung von Halbleiteranordnungen
DE60217203D1 (de) Poröse Teilchen, wässrige Dispersionen und Verfahren zu ihrer Herstellung
DE60205047D1 (de) Poröse Teilchen, wässrige Dispersionen und Verfahren zu ihrer Herstellung
DE60009997D1 (de) Eine eine wässrige Dispersionszusammensetzung verwendende chemisch-mechanische Poliermethode zur Verwendung in der Herstellung von Halbleitervorrichtungen
DE69919425D1 (de) Silberkatalysator zur Herstellung von Ethylenoxid , Verfahren zu seiner Herstellung und Verfahren zur Herstellung von Ethylenoxid
DE50011832D1 (de) VERFAHREN FÜR DIE HERSTELLUNG VON OPAKEM QUARZGLAS, FÜR DIE DURCHFÜHRUNG DES VERFAHRENS GEEIGNETES SiO2-GRANULAT UND BAUTEIL AUS OPAKEM QUARZGLAS
DE60025959D1 (de) Verbundpartikel und wässrige Dispersionen für chemisch-mechanisches Polieren
DE60216108D1 (de) Vorrichtung zur herstellung von verbundstrukturen und verfahren zu deren herstellung
DE69725601D1 (de) Sphärische halbleiteranordnung, verfahren zu seiner herstellung und sphärisches halbleiteranordnungmaterial
DE60003015D1 (de) Schleifartikel, verfahren zur herstellung desselben, und schleifvorrichtung
DE60034023D1 (de) Verfahren zur herstellung keramischer kronen und bausatz zu deren herstellung
DE60027721D1 (de) Bodenbelag, giessform und verfahren zur herstellung derselben
DE50111109D1 (de) Verfahren zur kontinuierlichen herstellung von stoff- und reaktionsgemischen und vorrichtung zu seiner durchführung
DE60225433D1 (de) Verfahren zur herstellung von 1,3-substituierte indene und aryl-annellierte azapolycyclische verbindungen
DE60002286D1 (de) Verfahren zur Herstellung von Ketonen, Alkoholen und Hydroperoxiden
DE60230949D1 (de) Heizung und Verfahren zu ihrer Herstellung
DE60211619D1 (de) Amphipatische Polymerpartikel und Verfahren zu deren Herstellung
DE69902600T2 (de) Styrolharzzusammensetzung und Verfahren zu ihrer Herstellung, sowie Verfahren zur Herstellung von Formkörpern aus Styrolharz
DE60038851D1 (de) Verfahren zur Herstellung von vernetzten organischen Partikeln und Suspensionen
DE60203975D1 (de) Verfahren zur Herstellung von magnetischen Teilchen, magnetische Teilchen und magnetischer Werkstoff
DE60141616D1 (de) Verfahren zur Herstellung von kleinen, sphärischen Siliconharzpartikeln
DE60030661D1 (de) Verfahren zur Herstellung von Alkanolaminen und Vorrichtung zu ihrer Herstellung
ZA200208135B (en) Materials and method for the biological production of sulfuric acid.
DE60115358D1 (de) Geformter Katalysator zur Herstellung von Triethylendiamin, Verfahren zu dessen Herstellung, und Verfahren zur Herstellung von Triethylendiamin
DE60239842D1 (de) Verfahren zur Herstellung von 10,11-dihydro-10-oxo-5h-dibenzoÄb,fÜazepin-5-carboxamid

Legal Events

Date Code Title Description
8364 No opposition during term of opposition