DE60035971D1 - Verfahren und gerät zur kompensierung ungleichmässiger behandlung in plasma-behandlungskammern - Google Patents

Verfahren und gerät zur kompensierung ungleichmässiger behandlung in plasma-behandlungskammern

Info

Publication number
DE60035971D1
DE60035971D1 DE60035971T DE60035971T DE60035971D1 DE 60035971 D1 DE60035971 D1 DE 60035971D1 DE 60035971 T DE60035971 T DE 60035971T DE 60035971 T DE60035971 T DE 60035971T DE 60035971 D1 DE60035971 D1 DE 60035971D1
Authority
DE
Germany
Prior art keywords
treatment
chambers
plasma treatment
compensating
unequal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60035971T
Other languages
English (en)
Other versions
DE60035971T2 (de
Inventor
Fangli J Hao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of DE60035971D1 publication Critical patent/DE60035971D1/de
Application granted granted Critical
Publication of DE60035971T2 publication Critical patent/DE60035971T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
DE60035971T 1999-03-31 2000-02-25 Verfahren und gerät zur kompensierung ungleichmässiger behandlung in plasma-behandlungskammern Expired - Lifetime DE60035971T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/282,644 US6188564B1 (en) 1999-03-31 1999-03-31 Method and apparatus for compensating non-uniform wafer processing in plasma processing chamber
US282644 1999-03-31
PCT/US2000/005036 WO2000058994A1 (en) 1999-03-31 2000-02-25 Method and apparatus for compensating non-uniform wafer processing in plasma processing

Publications (2)

Publication Number Publication Date
DE60035971D1 true DE60035971D1 (de) 2007-09-27
DE60035971T2 DE60035971T2 (de) 2008-05-08

Family

ID=23082464

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60035971T Expired - Lifetime DE60035971T2 (de) 1999-03-31 2000-02-25 Verfahren und gerät zur kompensierung ungleichmässiger behandlung in plasma-behandlungskammern

Country Status (8)

Country Link
US (1) US6188564B1 (de)
EP (1) EP1166323B1 (de)
JP (1) JP4632548B2 (de)
KR (1) KR100640241B1 (de)
AU (1) AU3382900A (de)
DE (1) DE60035971T2 (de)
TW (1) TW464975B (de)
WO (1) WO2000058994A1 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7012684B1 (en) * 1999-09-07 2006-03-14 Applied Materials, Inc. Method and apparatus to provide for automated process verification and hierarchical substrate examination
KR100502268B1 (ko) * 2000-03-01 2005-07-22 가부시끼가이샤 히다치 세이사꾸쇼 플라즈마처리장치 및 방법
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US8617351B2 (en) 2002-07-09 2013-12-31 Applied Materials, Inc. Plasma reactor with minimal D.C. coils for cusp, solenoid and mirror fields for plasma uniformity and device damage reduction
US20070048882A1 (en) * 2000-03-17 2007-03-01 Applied Materials, Inc. Method to reduce plasma-induced charging damage
US8048806B2 (en) * 2000-03-17 2011-11-01 Applied Materials, Inc. Methods to avoid unstable plasma states during a process transition
US6853141B2 (en) 2002-05-22 2005-02-08 Daniel J. Hoffman Capacitively coupled plasma reactor with magnetic plasma control
US6900596B2 (en) * 2002-07-09 2005-05-31 Applied Materials, Inc. Capacitively coupled plasma reactor with uniform radial distribution of plasma
US7141757B2 (en) * 2000-03-17 2006-11-28 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode having a resonance that is virtually pressure independent
US6528751B1 (en) 2000-03-17 2003-03-04 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma
US6894245B2 (en) * 2000-03-17 2005-05-17 Applied Materials, Inc. Merie plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US7220937B2 (en) * 2000-03-17 2007-05-22 Applied Materials, Inc. Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination
JP2001308065A (ja) * 2000-04-19 2001-11-02 Nec Corp ドライエッチング装置およびドライエッチング方法
US7479456B2 (en) * 2004-08-26 2009-01-20 Applied Materials, Inc. Gasless high voltage high contact force wafer contact-cooling electrostatic chuck
US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US6838387B1 (en) 2001-06-21 2005-01-04 John Zajac Fast etching system and process
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
TWI283899B (en) * 2002-07-09 2007-07-11 Applied Materials Inc Capacitively coupled plasma reactor with magnetic plasma control
US20040027781A1 (en) * 2002-08-12 2004-02-12 Hiroji Hanawa Low loss RF bias electrode for a plasma reactor with enhanced wafer edge RF coupling and highly efficient wafer cooling
US6723574B1 (en) * 2002-09-26 2004-04-20 Lam Research Corporation Method for quantifying uniformity patterns and including expert knowledge for tool development and control
US7795153B2 (en) * 2003-05-16 2010-09-14 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of selected chamber parameters
US7901952B2 (en) * 2003-05-16 2011-03-08 Applied Materials, Inc. Plasma reactor control by translating desired values of M plasma parameters to values of N chamber parameters
US7452824B2 (en) * 2003-05-16 2008-11-18 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of plural chamber parameters
US7247218B2 (en) * 2003-05-16 2007-07-24 Applied Materials, Inc. Plasma density, energy and etch rate measurements at bias power input and real time feedback control of plasma source and bias power
US7470626B2 (en) * 2003-05-16 2008-12-30 Applied Materials, Inc. Method of characterizing a chamber based upon concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7910013B2 (en) 2003-05-16 2011-03-22 Applied Materials, Inc. Method of controlling a chamber based upon predetermined concurrent behavior of selected plasma parameters as a function of source power, bias power and chamber pressure
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
US7771562B2 (en) * 2003-11-19 2010-08-10 Tokyo Electron Limited Etch system with integrated inductive coupling
US7426900B2 (en) * 2003-11-19 2008-09-23 Tokyo Electron Limited Integrated electrostatic inductive coupling for plasma processing
US20060096951A1 (en) * 2004-10-29 2006-05-11 International Business Machines Corporation Apparatus and method for controlling process non-uniformity
US7359177B2 (en) * 2005-05-10 2008-04-15 Applied Materials, Inc. Dual bias frequency plasma reactor with feedback control of E.S.C. voltage using wafer voltage measurement at the bias supply output
US7802917B2 (en) * 2005-08-05 2010-09-28 Lam Research Corporation Method and apparatus for chuck thermal calibration
US7418921B2 (en) * 2005-08-12 2008-09-02 Asm Japan K.K. Plasma CVD apparatus for forming uniform film
US7525787B2 (en) * 2005-09-30 2009-04-28 Lam Research Corporation Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
JP4920991B2 (ja) * 2006-02-22 2012-04-18 株式会社日立ハイテクノロジーズ プラズマ処理装置およびプラズマ処理方法
DE102006028977B4 (de) * 2006-06-23 2012-04-12 Qimonda Ag Sputterdepositions-Vorrichtung
JP5142360B2 (ja) * 2007-07-25 2013-02-13 芝浦メカトロニクス株式会社 セルフバイアス制御装置およびプラズマ処理装置
WO2010004997A1 (ja) * 2008-07-11 2010-01-14 東京エレクトロン株式会社 プラズマ処理装置
EP2368263A4 (de) * 2008-11-25 2012-05-16 M Cubed Technologies Inc Elektrostatisches futter
CN102387655B (zh) * 2010-09-06 2015-10-21 北京北方微电子基地设备工艺研究中心有限责任公司 用于等离子体设备的下电极及等离子体设备
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
KR101362860B1 (ko) 2012-10-04 2014-02-21 주식회사 알지비하이텍 평탄도 교정장치
JP6348321B2 (ja) * 2013-05-17 2018-06-27 キヤノンアネルバ株式会社 エッチング装置
US11823940B2 (en) * 2016-06-01 2023-11-21 Applied Matierals, Inc. Electrostatic chuck and manufacturing method therefor
JP6818351B2 (ja) * 2017-04-14 2021-01-20 サムコ株式会社 ウエハ処理装置

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3941966A (en) 1974-05-22 1976-03-02 Applied Materials, Inc. RF Power transmission line
JP2838810B2 (ja) 1990-07-16 1998-12-16 東陶機器株式会社 静電チャック
US5187454A (en) 1992-01-23 1993-02-16 Applied Materials, Inc. Electronically tuned matching network using predictor-corrector control system
JPH05226462A (ja) 1992-02-18 1993-09-03 Fujitsu Ltd 静電チャック
US5463525A (en) * 1993-12-20 1995-10-31 International Business Machines Corporation Guard ring electrostatic chuck
JP2659919B2 (ja) * 1994-01-13 1997-09-30 インターナショナル・ビジネス・マシーンズ・コーポレイション プラズマの不均一性を補正するプラズマ装置
US5463526A (en) 1994-01-21 1995-10-31 Lam Research Corporation Hybrid electrostatic chuck
US5671116A (en) 1995-03-10 1997-09-23 Lam Research Corporation Multilayered electrostatic chuck and method of manufacture thereof
US5670066A (en) 1995-03-17 1997-09-23 Lam Research Corporation Vacuum plasma processing wherein workpiece position is detected prior to chuck being activated
US5609720A (en) 1995-09-29 1997-03-11 Lam Research Corporation Thermal control of semiconductor wafer during reactive ion etching
US5793162A (en) 1995-12-29 1998-08-11 Lam Research Corporation Apparatus for controlling matching network of a vacuum plasma processor and memory for same
JPH09251985A (ja) * 1996-03-18 1997-09-22 Hitachi Ltd 電 極
US5708250A (en) 1996-03-29 1998-01-13 Lam Resarch Corporation Voltage controller for electrostatic chuck of vacuum plasma processors
US5812361A (en) 1996-03-29 1998-09-22 Lam Research Corporation Dynamic feedback electrostatic wafer chuck
US5689215A (en) 1996-05-23 1997-11-18 Lam Research Corporation Method of and apparatus for controlling reactive impedances of a matching network connected between an RF source and an RF plasma processor
US5737175A (en) 1996-06-19 1998-04-07 Lam Research Corporation Bias-tracking D.C. power circuit for an electrostatic chuck
US5798904A (en) 1996-06-28 1998-08-25 Lam Research Corporation High power electrostatic chuck contact
US5793192A (en) 1996-06-28 1998-08-11 Lam Research Corporation Methods and apparatuses for clamping and declamping a semiconductor wafer in a wafer processing system
JP3911787B2 (ja) * 1996-09-19 2007-05-09 株式会社日立製作所 試料処理装置及び試料処理方法
JP3650248B2 (ja) 1997-03-19 2005-05-18 東京エレクトロン株式会社 プラズマ処理装置
US5835335A (en) 1997-03-26 1998-11-10 Lam Research Corporation Unbalanced bipolar electrostatic chuck power supplies and methods thereof
US5942042A (en) * 1997-05-23 1999-08-24 Applied Materials, Inc. Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing system
US5933314A (en) * 1997-06-27 1999-08-03 Lam Research Corp. Method and an apparatus for offsetting plasma bias voltage in bi-polar electro-static chucks
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring

Also Published As

Publication number Publication date
AU3382900A (en) 2000-10-16
US6188564B1 (en) 2001-02-13
TW464975B (en) 2001-11-21
JP4632548B2 (ja) 2011-02-16
JP2002540616A (ja) 2002-11-26
EP1166323A1 (de) 2002-01-02
KR20010110708A (ko) 2001-12-13
WO2000058994A1 (en) 2000-10-05
EP1166323B1 (de) 2007-08-15
DE60035971T2 (de) 2008-05-08
KR100640241B1 (ko) 2006-10-31

Similar Documents

Publication Publication Date Title
DE60035971D1 (de) Verfahren und gerät zur kompensierung ungleichmässiger behandlung in plasma-behandlungskammern
DE69929271D1 (de) Apparat und Verfahren zur Plasmabehandlung
DE60231601D1 (de) Einrichtung und verfahren zur behandlung
DE10084417T1 (de) Verfahren und Apparat zur therapeutischen Laserbehandlung
NO20002608D0 (no) FremgangsmÕte og anordning for behandling av avløpsvann
DE60033613D1 (de) Vorrichtung und Verfahren zur Bearbeitung von Substraten
DE59900581D1 (de) D2-agonist enthaltendes transdermales therapeutisches system zur behandlung des parkinson-syndroms und verfahren zu seiner herstellung
DE60040145D1 (de) Verfahren und vorrichtung zur korrektur des frequenzversatzes
DE60040719D1 (de) Verfahren und Vorrichtung zur Behandlung von Halbleitersubstraten
DE69734324D1 (de) Verfahren zur Plasmabehandlung und Apparat dafür
DE69829625D1 (de) Verfahren und Vorrichtung zur Behandlung von Perfluorokohlenstoff
DE69841399D1 (de) Vorrichtung und Verfahren zur Trocknungsbehandlung
DE60116035D1 (de) Verfahren und Vorrichtung zur Abwasserbehandlung
DE69527661D1 (de) Vorrichtung und Verfahren zur Substratbehandlung mittels Plasma
DE60034851D1 (de) Verfahren und Vorrichtung zur elektrolytischen Bearbeitung
DE60033486D1 (de) Verfahren und Vorrichtung zur Behandlung von Perfluorverbindungen enthaltenden Gasen
DE60023623D1 (de) Vorrichtung und Verfahren zur Behandlung leicht polymerisierbarer Komponenten
DE60036631D1 (de) Plasmabehandlungsapparatur und plasmabehandlungsverfahren
DE69528743D1 (de) Verfahren und Vorrichtung zur Plasmabehandlung
DE60142605D1 (de) Verfahren und Vorrichtung zur Plasma-Behandlung
DE60033024D1 (de) Verfahren und apparat für ozone sterilisierung
TWI347629B (en) Apparatus for treating substrates and method of treating substrates
EP1152646A4 (de) Verfahren und vorrichtung zur plasmabehandlung
DE69937304D1 (de) Verfahren und vorrichtung zur vakuumbehandlung
DE69919678D1 (de) Verfahren und mittel zur behandlung und zum transport von extrudierten wurstmassen

Legal Events

Date Code Title Description
8364 No opposition during term of opposition