DE60013168D1 - Speicherzelle mit schmelzsicherungen zum speichern eines datenbits - Google Patents

Speicherzelle mit schmelzsicherungen zum speichern eines datenbits

Info

Publication number
DE60013168D1
DE60013168D1 DE60013168T DE60013168T DE60013168D1 DE 60013168 D1 DE60013168 D1 DE 60013168D1 DE 60013168 T DE60013168 T DE 60013168T DE 60013168 T DE60013168 T DE 60013168T DE 60013168 D1 DE60013168 D1 DE 60013168D1
Authority
DE
Germany
Prior art keywords
fuse
saving
data bit
storage cell
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60013168T
Other languages
English (en)
Other versions
DE60013168T2 (de
Inventor
Gabriel Daniel
Oliver Weinfurtner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Qimonda AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE60013168D1 publication Critical patent/DE60013168D1/de
Publication of DE60013168T2 publication Critical patent/DE60013168T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
DE60013168T 1999-11-18 2000-10-24 Speicherzelle mit schmelzsicherungen zum speichern eines datenbits Expired - Lifetime DE60013168T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/442,982 US6285619B1 (en) 1999-11-18 1999-11-18 Memory cell
US422982 1999-11-18
PCT/US2000/029249 WO2001037284A1 (en) 1999-11-18 2000-10-24 Memory cell

Publications (2)

Publication Number Publication Date
DE60013168D1 true DE60013168D1 (de) 2004-09-23
DE60013168T2 DE60013168T2 (de) 2005-08-11

Family

ID=23758959

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60013168T Expired - Lifetime DE60013168T2 (de) 1999-11-18 2000-10-24 Speicherzelle mit schmelzsicherungen zum speichern eines datenbits

Country Status (5)

Country Link
US (1) US6285619B1 (de)
EP (1) EP1232500B1 (de)
DE (1) DE60013168T2 (de)
TW (1) TW594767B (de)
WO (1) WO2001037284A1 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6809972B2 (en) * 2003-03-13 2004-10-26 Infineon Technologies Ag Circuit technique for column redundancy fuse latches
US6956784B1 (en) * 2004-08-03 2005-10-18 Analog Devices, Inc. Writable memory
US7276955B2 (en) * 2005-04-14 2007-10-02 Micron Technology, Inc. Circuit and method for stable fuse detection
DE102006019075B4 (de) * 2006-04-25 2008-01-31 Infineon Technologies Ag Integrierte Schaltung zur Speicherung eines Datums
US8194489B2 (en) * 2010-01-21 2012-06-05 International Business Machines Corporation Paired programmable fuses
KR20150123378A (ko) * 2014-04-24 2015-11-04 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 동작 방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60103594A (ja) * 1983-11-10 1985-06-07 Fujitsu Ltd 情報記憶回路
US5208775A (en) * 1990-09-07 1993-05-04 Samsung Electronics Co., Ltd. Dual-port memory device
US5550394A (en) * 1993-06-18 1996-08-27 Texas Instruments Incorporated Semiconductor memory device and defective memory cell correction circuit
JP2991575B2 (ja) * 1992-10-08 1999-12-20 沖電気工業株式会社 半導体集積回路
JPH0877776A (ja) * 1994-09-06 1996-03-22 Mitsubishi Electric Corp 半導体記憶装置
DE4437698A1 (de) * 1994-10-21 1995-03-16 Hilmann Ruge Thomas Dipl Phys Struktur zur binären Speicherung von Informationen auf integrierten Schaltungen mittels Laserstrahlung und Verfahren zur nichtflüchtigen Informationsspeicherung
JP2710235B2 (ja) * 1995-08-30 1998-02-10 日本電気株式会社 欠陥救済判定回路
US5959445A (en) * 1995-09-29 1999-09-28 Intel Corporation Static, high-sensitivity, fuse-based storage cell
GB2307320B (en) * 1995-11-18 2000-10-18 Motorola Inc Non-volatile memory cell and method of storing data therein
KR100258975B1 (ko) * 1996-12-10 2000-06-15 윤종용 반도체 메모리장치
US5910921A (en) * 1997-04-22 1999-06-08 Micron Technology, Inc. Self-test of a memory device
US5898626A (en) * 1997-06-19 1999-04-27 Silicon Magic Corporation Redundancy programming circuit and system for semiconductor memory

Also Published As

Publication number Publication date
EP1232500A1 (de) 2002-08-21
WO2001037284A1 (en) 2001-05-25
EP1232500B1 (de) 2004-08-18
DE60013168T2 (de) 2005-08-11
US6285619B1 (en) 2001-09-04
TW594767B (en) 2004-06-21

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: QIMONDA AG, 81739 MUENCHEN, DE