DE60325343D1 - Verbessertes löschverfahren für eine doppelbit-speicherzelle - Google Patents

Verbessertes löschverfahren für eine doppelbit-speicherzelle

Info

Publication number
DE60325343D1
DE60325343D1 DE60325343T DE60325343T DE60325343D1 DE 60325343 D1 DE60325343 D1 DE 60325343D1 DE 60325343 T DE60325343 T DE 60325343T DE 60325343 T DE60325343 T DE 60325343T DE 60325343 D1 DE60325343 D1 DE 60325343D1
Authority
DE
Germany
Prior art keywords
improved
memory cell
bit memory
double bit
delete procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60325343T
Other languages
English (en)
Inventor
Darlene G Hamilton
Eric M Ajimine
Binh Q Le
Edward Hsia
Kulachet Tanpairoj
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Spansion LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Spansion LLC filed Critical Spansion LLC
Application granted granted Critical
Publication of DE60325343D1 publication Critical patent/DE60325343D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/107—Programming all cells in an array, sector or block to the same state prior to flash erasing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2216/00—Indexing scheme relating to G11C16/00 and subgroups, for features not directly covered by these groups
    • G11C2216/12—Reading and writing aspects of erasable programmable read-only memories
    • G11C2216/18—Flash erasure of all the cells in an array, sector or block simultaneously

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
DE60325343T 2002-04-08 2003-02-14 Verbessertes löschverfahren für eine doppelbit-speicherzelle Expired - Lifetime DE60325343D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/119,366 US6901010B1 (en) 2002-04-08 2002-04-08 Erase method for a dual bit memory cell
PCT/US2003/004607 WO2003088258A1 (en) 2002-04-08 2003-02-14 Improved erase method for a dual bit memory cell

Publications (1)

Publication Number Publication Date
DE60325343D1 true DE60325343D1 (de) 2009-01-29

Family

ID=29248245

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60325343T Expired - Lifetime DE60325343D1 (de) 2002-04-08 2003-02-14 Verbessertes löschverfahren für eine doppelbit-speicherzelle

Country Status (9)

Country Link
US (1) US6901010B1 (de)
EP (1) EP1497833B1 (de)
JP (1) JP4235115B2 (de)
KR (1) KR100936087B1 (de)
CN (1) CN1698133A (de)
AU (1) AU2003211091A1 (de)
DE (1) DE60325343D1 (de)
TW (1) TWI288417B (de)
WO (1) WO2003088258A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7167398B1 (en) * 2005-02-23 2007-01-23 Spansion L.L.C. System and method for erasing a memory cell
US7391654B2 (en) * 2005-05-11 2008-06-24 Micron Technology, Inc. Memory block erasing in a flash memory device
US8116142B2 (en) 2005-09-06 2012-02-14 Infineon Technologies Ag Method and circuit for erasing a non-volatile memory cell
CN100464375C (zh) * 2005-10-08 2009-02-25 晶豪科技股份有限公司 降低擦除时间及防止过擦除之擦除方法
US7400538B2 (en) * 2006-10-05 2008-07-15 Tower Semiconductor Ltd. NROM memory device with enhanced endurance
US7385851B1 (en) * 2006-12-22 2008-06-10 Spansion Llc Repetitive erase verify technique for flash memory devices
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
US7839690B2 (en) * 2008-12-11 2010-11-23 Sandisk Corporation Adaptive erase and soft programming for memory
KR101676816B1 (ko) * 2010-02-11 2016-11-18 삼성전자주식회사 플래시 메모리 장치 및 그것의 프로그램 방법
CN105450651B (zh) * 2015-12-04 2021-07-02 浙江宇视科技有限公司 一种监控视频码流动态路由选择的方法及装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5491809A (en) * 1993-01-05 1996-02-13 Texas Instruments Incorporated Smart erase algorithm with secure scheme for flash EPROMs
JP4058219B2 (ja) * 1999-09-17 2008-03-05 株式会社ルネサステクノロジ 半導体集積回路
US6331951B1 (en) 2000-11-21 2001-12-18 Advanced Micro Devices, Inc. Method and system for embedded chip erase verification
US6344994B1 (en) * 2001-01-31 2002-02-05 Advanced Micro Devices Data retention characteristics as a result of high temperature bake
US6567303B1 (en) * 2001-01-31 2003-05-20 Advanced Micro Devices, Inc. Charge injection
US6456533B1 (en) * 2001-02-28 2002-09-24 Advanced Micro Devices, Inc. Higher program VT and faster programming rates based on improved erase methods
US6442074B1 (en) * 2001-02-28 2002-08-27 Advanced Micro Devices, Inc. Tailored erase method using higher program VT and higher negative gate erase
US6307784B1 (en) * 2001-02-28 2001-10-23 Advanced Micro Devices Negative gate erase
US6493266B1 (en) * 2001-04-09 2002-12-10 Advanced Micro Devices, Inc. Soft program and soft program verify of the core cells in flash memory array
US6512701B1 (en) * 2001-06-21 2003-01-28 Advanced Micro Devices, Inc. Erase method for dual bit virtual ground flash

Also Published As

Publication number Publication date
JP2005522815A (ja) 2005-07-28
EP1497833A1 (de) 2005-01-19
WO2003088258A1 (en) 2003-10-23
TWI288417B (en) 2007-10-11
KR100936087B1 (ko) 2010-01-12
CN1698133A (zh) 2005-11-16
TW200400511A (en) 2004-01-01
EP1497833B1 (de) 2008-12-17
US6901010B1 (en) 2005-05-31
KR20040097312A (ko) 2004-11-17
JP4235115B2 (ja) 2009-03-11
AU2003211091A1 (en) 2003-10-27

Similar Documents

Publication Publication Date Title
DE60301119D1 (de) Nichtflüchtige SRAM Speicherzelle
DE60201203D1 (de) Kaschierter Leseleiter für eine Tunnelübergang-Speicherzelle
DE60329357D1 (de) Herstellungsverfahren für eine selbstausgerichtete Kreuzpunkt-Speichermatrix
DE602004028190D1 (de) Speicheranordnung
DE60217463D1 (de) Nichtflüchtige ferroelektrische Zweitransistor-Speicherzelle
SG125143A1 (en) Nrom memory cell, memory array, related devices and methods
DE60319718D1 (de) Steuerverfahren für eine nichtflüchtige speichereinrichtung
DE60314068D1 (de) Nichtflüchtiger Halbleiterspeicher
DE50308471D1 (de) Wort- und bitleitungsanordnung für einen finfet- halbleiterspeicher
DE60300777D1 (de) Nichtflüchtiger redundanzadressen-speicher
DE10195853T1 (de) Verbesserte Speicherzelle hoher Dichte
SG108925A1 (en) Non-volatile memory cells
DE60037786D1 (de) Nichtflüchtiger Halbleiterspeicher mit Zwei-Bitzellen
DK1424152T3 (da) Værktöjsholder til kerneborekroner
DE60304209D1 (de) Magnettunnelsperrschichtspeicherzellenarchitektur
DE60329993D1 (de) Speicherherstellungsverfahren mit bitleitungsisolation
AU2003285948A8 (en) Source-biased memory cell array
DE60317930D1 (de) Verbessertes system zum programmieren einer nichtflüchtigen speicherzelle
DE60325343D1 (de) Verbessertes löschverfahren für eine doppelbit-speicherzelle
DE60222891D1 (de) Nichtflüchtige Speicheranordnung und Selbstreparatur-Verfahren
NO20032188D0 (no) En selvinnstillende ikke-volatil minnecelle
DE60212721D1 (de) Datenkonservierung
DE60321716D1 (de) Verbessertes vorspannungsverfahren zum lesen einer nichtfl chtigen speicherzelle
DE60230129D1 (de) Zeilenauswahlschaltung für Speicherzellenarray
GB2398898B (en) Memory management

Legal Events

Date Code Title Description
8364 No opposition during term of opposition