DE69527252D1 - Lesen einer Bitleitung in einer Speichermatrix - Google Patents
Lesen einer Bitleitung in einer SpeichermatrixInfo
- Publication number
- DE69527252D1 DE69527252D1 DE69527252T DE69527252T DE69527252D1 DE 69527252 D1 DE69527252 D1 DE 69527252D1 DE 69527252 T DE69527252 T DE 69527252T DE 69527252 T DE69527252 T DE 69527252T DE 69527252 D1 DE69527252 D1 DE 69527252D1
- Authority
- DE
- Germany
- Prior art keywords
- read
- bit line
- memory matrix
- matrix
- memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/26—Sensing or reading circuits; Data output circuits
- G11C16/28—Sensing or reading circuits; Data output circuits using differential sensing or reference cells, e.g. dummy cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/14—Dummy cell management; Sense reference voltage generators
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Read Only Memory (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9423032A GB9423032D0 (en) | 1994-11-15 | 1994-11-15 | Bit line sensing in a memory array |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69527252D1 true DE69527252D1 (de) | 2002-08-08 |
| DE69527252T2 DE69527252T2 (de) | 2003-03-06 |
Family
ID=10764426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69527252T Expired - Fee Related DE69527252T2 (de) | 1994-11-15 | 1995-11-09 | Lesen einer Bitleitung in einer Speichermatrix |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US5619449A (de) |
| EP (1) | EP0713223B1 (de) |
| JP (1) | JP2954517B2 (de) |
| DE (1) | DE69527252T2 (de) |
| GB (1) | GB9423032D0 (de) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2735896B1 (fr) * | 1995-06-21 | 1997-08-22 | Sgs Thomson Microelectronics | Memoire eeprom programmable et effacable par effet de fowler-nordheim |
| US5729493A (en) * | 1996-08-23 | 1998-03-17 | Motorola Inc. | Memory suitable for operation at low power supply voltages and sense amplifier therefor |
| US5828607A (en) * | 1997-05-21 | 1998-10-27 | Motorola, Inc. | Memory programming circuit and method |
| US5930180A (en) * | 1997-07-01 | 1999-07-27 | Enable Semiconductor, Inc. | ROM bit sensing |
| US5991196A (en) * | 1997-12-16 | 1999-11-23 | Microchip Technology Incorporated | Reprogrammable memory device with variable page size |
| US6711068B2 (en) * | 2002-06-28 | 2004-03-23 | Motorola, Inc. | Balanced load memory and method of operation |
| JP6161482B2 (ja) * | 2013-09-19 | 2017-07-12 | ルネサスエレクトロニクス株式会社 | 半導体記憶装置 |
| JP6422273B2 (ja) * | 2014-09-03 | 2018-11-14 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
| US9773529B1 (en) | 2016-06-16 | 2017-09-26 | Cypress Semiconductor Corporation | Methods and devices for reading data from non-volatile memory cells |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2548429B1 (fr) * | 1983-06-28 | 1988-12-30 | Efcis | Memoire permanente organisee en deux demi-plans pour ameliorer la vitesse de lecture |
| JPS6173300A (ja) * | 1984-09-17 | 1986-04-15 | Toshiba Corp | 半導体記憶装置 |
| JPS6177199A (ja) * | 1984-09-21 | 1986-04-19 | Toshiba Corp | 半導体記憶装置 |
| JP2537264B2 (ja) * | 1988-04-13 | 1996-09-25 | 株式会社東芝 | 半導体記憶装置 |
| US5022009A (en) * | 1988-06-02 | 1991-06-04 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory device having reading operation of information by differential amplification |
| US5237534A (en) * | 1989-04-27 | 1993-08-17 | Kabushiki Kaisha Toshiba | Data sense circuit for a semiconductor nonvolatile memory device |
| GB8917835D0 (en) * | 1989-08-04 | 1989-09-20 | Inmos Ltd | Current sensing amplifier for a memory |
| JPH0793033B2 (ja) * | 1989-08-24 | 1995-10-09 | 日本電気株式会社 | センスアンプ |
| JPH04188498A (ja) * | 1990-11-22 | 1992-07-07 | Fujitsu Ltd | 書き換え可能な不揮発性半導体記憶装置 |
| US5331597A (en) * | 1991-03-29 | 1994-07-19 | Kabushiki Kaisha Toshiba | Semiconductor nonvolatile memory apparatus including threshold voltage shift circuitry |
| US5440506A (en) * | 1992-08-14 | 1995-08-08 | Harris Corporation | Semiconductor ROM device and method |
| US5487045A (en) * | 1994-09-16 | 1996-01-23 | Philips Electroics North America Corporation | Sense amplifier having variable sensing load for non-volatile memory |
-
1994
- 1994-11-15 GB GB9423032A patent/GB9423032D0/en active Pending
-
1995
- 1995-11-09 DE DE69527252T patent/DE69527252T2/de not_active Expired - Fee Related
- 1995-11-09 EP EP95308019A patent/EP0713223B1/de not_active Expired - Lifetime
- 1995-11-15 JP JP29699395A patent/JP2954517B2/ja not_active Expired - Fee Related
- 1995-11-15 US US08/559,695 patent/US5619449A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE69527252T2 (de) | 2003-03-06 |
| GB9423032D0 (en) | 1995-01-04 |
| EP0713223A1 (de) | 1996-05-22 |
| EP0713223B1 (de) | 2002-07-03 |
| US5619449A (en) | 1997-04-08 |
| JP2954517B2 (ja) | 1999-09-27 |
| JPH0945093A (ja) | 1997-02-14 |
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| DE69417077D1 (de) | Festwertspeicher |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |