DE60013079D1 - Doppeltes magnetisches Element mit zwei magnetischen Zustände und Herstellungsverfahren dafür - Google Patents

Doppeltes magnetisches Element mit zwei magnetischen Zustände und Herstellungsverfahren dafür

Info

Publication number
DE60013079D1
DE60013079D1 DE60013079T DE60013079T DE60013079D1 DE 60013079 D1 DE60013079 D1 DE 60013079D1 DE 60013079 T DE60013079 T DE 60013079T DE 60013079 T DE60013079 T DE 60013079T DE 60013079 D1 DE60013079 D1 DE 60013079D1
Authority
DE
Germany
Prior art keywords
manufacturing
magnetic
method therefor
double
states
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60013079T
Other languages
English (en)
Other versions
DE60013079T2 (de
Inventor
Eugene Youjun Chen
Jon Michael Slaughter
Mark Durlam
Mark Deherrea
Saied N Tehrani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP USA Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE60013079D1 publication Critical patent/DE60013079D1/de
Publication of DE60013079T2 publication Critical patent/DE60013079T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
DE60013079T 1999-12-17 2000-12-11 Doppeltes magnetisches Element mit zwei magnetischen Zuständen und Herstellungsverfahren dafür Expired - Fee Related DE60013079T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/464,807 US6233172B1 (en) 1999-12-17 1999-12-17 Magnetic element with dual magnetic states and fabrication method thereof
US464807 1999-12-17

Publications (2)

Publication Number Publication Date
DE60013079D1 true DE60013079D1 (de) 2004-09-23
DE60013079T2 DE60013079T2 (de) 2005-01-27

Family

ID=23845310

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60013079T Expired - Fee Related DE60013079T2 (de) 1999-12-17 2000-12-11 Doppeltes magnetisches Element mit zwei magnetischen Zuständen und Herstellungsverfahren dafür

Country Status (7)

Country Link
US (1) US6233172B1 (de)
EP (1) EP1109168B1 (de)
JP (1) JP4969725B2 (de)
KR (1) KR100748069B1 (de)
CN (2) CN1171323C (de)
DE (1) DE60013079T2 (de)
SG (1) SG87195A1 (de)

Families Citing this family (134)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6172904B1 (en) * 2000-01-27 2001-01-09 Hewlett-Packard Company Magnetic memory cell with symmetric switching characteristics
US6297983B1 (en) * 2000-02-29 2001-10-02 Hewlett-Packard Company Reference layer structure in a magnetic storage cell
DE10113853B4 (de) * 2000-03-23 2009-08-06 Sharp K.K. Magnetspeicherelement und Magnetspeicher
JP4309075B2 (ja) 2000-07-27 2009-08-05 株式会社東芝 磁気記憶装置
US6429497B1 (en) * 2000-11-18 2002-08-06 Hewlett-Packard Company Method for improving breakdown voltage in magnetic tunnel junctions
US6657888B1 (en) 2001-05-11 2003-12-02 Board Of Regents Of The University Of Nebraska Application of high spin polarization materials in two terminal non-volatile bistable memory devices
DE10128964B4 (de) * 2001-06-15 2012-02-09 Qimonda Ag Digitale magnetische Speicherzelleneinrichtung
US6510080B1 (en) 2001-08-28 2003-01-21 Micron Technology Inc. Three terminal magnetic random access memory
US6485989B1 (en) 2001-08-30 2002-11-26 Micron Technology, Inc. MRAM sense layer isolation
FR2830971B1 (fr) * 2001-10-12 2004-03-12 Commissariat Energie Atomique Dispositif magnetoresistif a vanne de spin a performances ameliorees
US6531723B1 (en) * 2001-10-16 2003-03-11 Motorola, Inc. Magnetoresistance random access memory for improved scalability
KR100638380B1 (ko) * 2001-11-14 2006-10-26 노키아 코포레이션 ＩＰｖ6 용 이동 라우터 지원
DE10158795B4 (de) * 2001-11-30 2005-12-22 Infineon Technologies Ag Magnetoresistive Speicherzelle mit dynamischer Referenzschicht
JP4157707B2 (ja) * 2002-01-16 2008-10-01 株式会社東芝 磁気メモリ
US6893893B2 (en) * 2002-03-19 2005-05-17 Applied Materials Inc Method of preventing short circuits in magnetic film stacks
US6728132B2 (en) * 2002-04-03 2004-04-27 Micron Technology, Inc. Synthetic-ferrimagnet sense-layer for high density MRAM applications
US6724652B2 (en) * 2002-05-02 2004-04-20 Micron Technology, Inc. Low remanence flux concentrator for MRAM devices
US6879512B2 (en) * 2002-05-24 2005-04-12 International Business Machines Corporation Nonvolatile memory device utilizing spin-valve-type designs and current pulses
US6683815B1 (en) 2002-06-26 2004-01-27 Silicon Magnetic Systems Magnetic memory cell and method for assigning tunable writing currents
CN100461419C (zh) * 2002-07-09 2009-02-11 日本电气株式会社 磁随机存取存储器
US7095646B2 (en) * 2002-07-17 2006-08-22 Freescale Semiconductor, Inc. Multi-state magnetoresistance random access cell with improved memory storage density
JP2004128237A (ja) * 2002-10-03 2004-04-22 Sony Corp 磁気抵抗効果素子および磁気メモリ装置
US6898112B2 (en) * 2002-12-18 2005-05-24 Freescale Semiconductor, Inc. Synthetic antiferromagnetic structure for magnetoelectronic devices
US7002228B2 (en) * 2003-02-18 2006-02-21 Micron Technology, Inc. Diffusion barrier for improving the thermal stability of MRAM devices
US6885073B2 (en) * 2003-04-02 2005-04-26 Micron Technology, Inc. Method and apparatus providing MRAM devices with fine tuned offset
JP4863151B2 (ja) * 2003-06-23 2012-01-25 日本電気株式会社 磁気ランダム・アクセス・メモリとその製造方法
US6956763B2 (en) * 2003-06-27 2005-10-18 Freescale Semiconductor, Inc. MRAM element and methods for writing the MRAM element
US7573737B2 (en) * 2003-08-19 2009-08-11 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US8755222B2 (en) 2003-08-19 2014-06-17 New York University Bipolar spin-transfer switching
US7911832B2 (en) * 2003-08-19 2011-03-22 New York University High speed low power magnetic devices based on current induced spin-momentum transfer
US6967366B2 (en) * 2003-08-25 2005-11-22 Freescale Semiconductor, Inc. Magnetoresistive random access memory with reduced switching field variation
JP2005129801A (ja) * 2003-10-24 2005-05-19 Sony Corp 磁気記憶素子及び磁気メモリ
JP4631267B2 (ja) * 2003-10-27 2011-02-16 ソニー株式会社 磁気記憶素子及び磁気メモリ
US7045838B2 (en) * 2003-10-31 2006-05-16 International Business Machines Corporation Techniques for coupling in semiconductor devices and magnetic device using these techniques
US7053429B2 (en) * 2003-11-06 2006-05-30 Honeywell International Inc. Bias-adjusted giant magnetoresistive (GMR) devices for magnetic random access memory (MRAM) applications
KR100988086B1 (ko) * 2003-11-14 2010-10-18 삼성전자주식회사 자기 모멘트가 낮은 프리 자성막을 구비하는 자기터널접합셀 및 이를 포함하는 자기램
US7031183B2 (en) * 2003-12-08 2006-04-18 Freescale Semiconductor, Inc. MRAM device integrated with other types of circuitry
US7072209B2 (en) * 2003-12-29 2006-07-04 Micron Technology, Inc. Magnetic memory having synthetic antiferromagnetic pinned layer
US7440314B2 (en) 2004-03-05 2008-10-21 Nec Corporation Toggle-type magnetoresistive random access memory
US7414881B2 (en) * 2004-03-31 2008-08-19 Nec Corporation Magnetization direction control method and application thereof to MRAM
US7067330B2 (en) * 2004-07-16 2006-06-27 Headway Technologies, Inc. Magnetic random access memory array with thin conduction electrical read and write lines
JP4868198B2 (ja) * 2004-08-19 2012-02-01 日本電気株式会社 磁性メモリ
US7129098B2 (en) * 2004-11-24 2006-10-31 Freescale Semiconductor, Inc. Reduced power magnetoresistive random access memory elements
JP5077802B2 (ja) 2005-02-16 2012-11-21 日本電気株式会社 積層強磁性構造体、及び、ｍｔｊ素子
JP4877575B2 (ja) * 2005-05-19 2012-02-15 日本電気株式会社 磁気ランダムアクセスメモリ
US7301801B2 (en) * 2005-10-28 2007-11-27 International Business Machines Corporation Tuned pinned layers for magnetic tunnel junctions with multicomponent free layers
US20080112214A1 (en) * 2006-10-30 2008-05-15 Young Sir Chung Electronic assembly having magnetic tunnel junction voltage sensors and method for forming the same
JP4380693B2 (ja) * 2006-12-12 2009-12-09 ソニー株式会社 記憶素子、メモリ
JP4380707B2 (ja) * 2007-01-19 2009-12-09 ソニー株式会社 記憶素子
US9812184B2 (en) 2007-10-31 2017-11-07 New York University Current induced spin-momentum transfer stack with dual insulating layers
US7821771B2 (en) * 2008-04-11 2010-10-26 Northern Lights Semiconductor Corp. Apparatus for storing electrical energy
US8705212B2 (en) 2011-04-25 2014-04-22 Seagate Technology Llc Magnetic element with enhanced coupling portion
US8755154B2 (en) 2011-09-13 2014-06-17 Seagate Technology Llc Tuned angled uniaxial anisotropy in trilayer magnetic sensors
US8829901B2 (en) * 2011-11-04 2014-09-09 Honeywell International Inc. Method of using a magnetoresistive sensor in second harmonic detection mode for sensing weak magnetic fields
CN104011862B (zh) * 2011-12-30 2017-07-18 英特尔公司 平衡垂直磁隧道结中的状态之间的能垒
US9082950B2 (en) 2012-10-17 2015-07-14 New York University Increased magnetoresistance in an inverted orthogonal spin transfer layer stack
US9082888B2 (en) 2012-10-17 2015-07-14 New York University Inverted orthogonal spin transfer layer stack
US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
EP3167449A4 (de) 2014-07-07 2018-02-28 Intel Corporation Stt-speichervorrichtungen mit magnetischen kontakten
US9263667B1 (en) 2014-07-25 2016-02-16 Spin Transfer Technologies, Inc. Method for manufacturing MTJ memory device
US9337412B2 (en) 2014-09-22 2016-05-10 Spin Transfer Technologies, Inc. Magnetic tunnel junction structure for MRAM device
US9728712B2 (en) 2015-04-21 2017-08-08 Spin Transfer Technologies, Inc. Spin transfer torque structure for MRAM devices having a spin current injection capping layer
US10468590B2 (en) 2015-04-21 2019-11-05 Spin Memory, Inc. High annealing temperature perpendicular magnetic anisotropy structure for magnetic random access memory
US9853206B2 (en) 2015-06-16 2017-12-26 Spin Transfer Technologies, Inc. Precessional spin current structure for MRAM
US9773974B2 (en) 2015-07-30 2017-09-26 Spin Transfer Technologies, Inc. Polishing stop layer(s) for processing arrays of semiconductor elements
US10163479B2 (en) 2015-08-14 2018-12-25 Spin Transfer Technologies, Inc. Method and apparatus for bipolar memory write-verify
US9741926B1 (en) 2016-01-28 2017-08-22 Spin Transfer Technologies, Inc. Memory cell having magnetic tunnel junction and thermal stability enhancement layer
US10818331B2 (en) 2016-09-27 2020-10-27 Spin Memory, Inc. Multi-chip module for MRAM devices with levels of dynamic redundancy registers
US11151042B2 (en) 2016-09-27 2021-10-19 Integrated Silicon Solution, (Cayman) Inc. Error cache segmentation for power reduction
US10366774B2 (en) 2016-09-27 2019-07-30 Spin Memory, Inc. Device with dynamic redundancy registers
US10437491B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of processing incomplete memory operations in a memory device during a power up sequence and a power down sequence using a dynamic redundancy register
US10628316B2 (en) 2016-09-27 2020-04-21 Spin Memory, Inc. Memory device with a plurality of memory banks where each memory bank is associated with a corresponding memory instruction pipeline and a dynamic redundancy register
US10460781B2 (en) 2016-09-27 2019-10-29 Spin Memory, Inc. Memory device with a dual Y-multiplexer structure for performing two simultaneous operations on the same row of a memory bank
US11119910B2 (en) 2016-09-27 2021-09-14 Spin Memory, Inc. Heuristics for selecting subsegments for entry in and entry out operations in an error cache system with coarse and fine grain segments
US10546625B2 (en) 2016-09-27 2020-01-28 Spin Memory, Inc. Method of optimizing write voltage based on error buffer occupancy
US10991410B2 (en) 2016-09-27 2021-04-27 Spin Memory, Inc. Bi-polar write scheme
US10437723B2 (en) 2016-09-27 2019-10-08 Spin Memory, Inc. Method of flushing the contents of a dynamic redundancy register to a secure storage area during a power down in a memory device
US10446210B2 (en) 2016-09-27 2019-10-15 Spin Memory, Inc. Memory instruction pipeline with a pre-read stage for a write operation for reducing power consumption in a memory device that uses dynamic redundancy registers
US10360964B2 (en) 2016-09-27 2019-07-23 Spin Memory, Inc. Method of writing contents in memory during a power up sequence using a dynamic redundancy register in a memory device
US11119936B2 (en) 2016-09-27 2021-09-14 Spin Memory, Inc. Error cache system with coarse and fine segments for power optimization
US10665777B2 (en) 2017-02-28 2020-05-26 Spin Memory, Inc. Precessional spin current structure with non-magnetic insertion layer for MRAM
US10672976B2 (en) 2017-02-28 2020-06-02 Spin Memory, Inc. Precessional spin current structure with high in-plane magnetization for MRAM
US10032978B1 (en) 2017-06-27 2018-07-24 Spin Transfer Technologies, Inc. MRAM with reduced stray magnetic fields
US10529439B2 (en) 2017-10-24 2020-01-07 Spin Memory, Inc. On-the-fly bit failure detection and bit redundancy remapping techniques to correct for fixed bit defects
US10656994B2 (en) 2017-10-24 2020-05-19 Spin Memory, Inc. Over-voltage write operation of tunnel magnet-resistance (“TMR”) memory device and correcting failure bits therefrom by using on-the-fly bit failure detection and bit redundancy remapping techniques
US10481976B2 (en) 2017-10-24 2019-11-19 Spin Memory, Inc. Forcing bits as bad to widen the window between the distributions of acceptable high and low resistive bits thereby lowering the margin and increasing the speed of the sense amplifiers
US10489245B2 (en) 2017-10-24 2019-11-26 Spin Memory, Inc. Forcing stuck bits, waterfall bits, shunt bits and low TMR bits to short during testing and using on-the-fly bit failure detection and bit redundancy remapping techniques to correct them
US10679685B2 (en) 2017-12-27 2020-06-09 Spin Memory, Inc. Shared bit line array architecture for magnetoresistive memory
US10360962B1 (en) 2017-12-28 2019-07-23 Spin Memory, Inc. Memory array with individually trimmable sense amplifiers
US10811594B2 (en) 2017-12-28 2020-10-20 Spin Memory, Inc. Process for hard mask development for MRAM pillar formation using photolithography
US10891997B2 (en) 2017-12-28 2021-01-12 Spin Memory, Inc. Memory array with horizontal source line and a virtual source line
US10395712B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Memory array with horizontal source line and sacrificial bitline per virtual source
US10424726B2 (en) 2017-12-28 2019-09-24 Spin Memory, Inc. Process for improving photoresist pillar adhesion during MRAM fabrication
US10395711B2 (en) 2017-12-28 2019-08-27 Spin Memory, Inc. Perpendicular source and bit lines for an MRAM array
US10516094B2 (en) 2017-12-28 2019-12-24 Spin Memory, Inc. Process for creating dense pillars using multiple exposures for MRAM fabrication
US10886330B2 (en) 2017-12-29 2021-01-05 Spin Memory, Inc. Memory device having overlapping magnetic tunnel junctions in compliance with a reference pitch
US10360961B1 (en) 2017-12-29 2019-07-23 Spin Memory, Inc. AC current pre-charge write-assist in orthogonal STT-MRAM
US10199083B1 (en) 2017-12-29 2019-02-05 Spin Transfer Technologies, Inc. Three-terminal MRAM with ac write-assist for low read disturb
US10784439B2 (en) 2017-12-29 2020-09-22 Spin Memory, Inc. Precessional spin current magnetic tunnel junction devices and methods of manufacture
US10424723B2 (en) 2017-12-29 2019-09-24 Spin Memory, Inc. Magnetic tunnel junction devices including an optimization layer
US10840436B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Perpendicular magnetic anisotropy interface tunnel junction devices and methods of manufacture
US10840439B2 (en) 2017-12-29 2020-11-17 Spin Memory, Inc. Magnetic tunnel junction (MTJ) fabrication methods and systems
US10236047B1 (en) 2017-12-29 2019-03-19 Spin Memory, Inc. Shared oscillator (STNO) for MRAM array write-assist in orthogonal STT-MRAM
US10367139B2 (en) 2017-12-29 2019-07-30 Spin Memory, Inc. Methods of manufacturing magnetic tunnel junction devices
US10270027B1 (en) 2017-12-29 2019-04-23 Spin Memory, Inc. Self-generating AC current assist in orthogonal STT-MRAM
US10236048B1 (en) 2017-12-29 2019-03-19 Spin Memory, Inc. AC current write-assist in orthogonal STT-MRAM
US10546624B2 (en) 2017-12-29 2020-01-28 Spin Memory, Inc. Multi-port random access memory
US10255962B1 (en) 2017-12-30 2019-04-09 Spin Memory, Inc. Microwave write-assist in orthogonal STT-MRAM
US10229724B1 (en) 2017-12-30 2019-03-12 Spin Memory, Inc. Microwave write-assist in series-interconnected orthogonal STT-MRAM devices
US10339993B1 (en) 2017-12-30 2019-07-02 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic assist layers for free layer switching
US10236439B1 (en) 2017-12-30 2019-03-19 Spin Memory, Inc. Switching and stability control for perpendicular magnetic tunnel junction device
US10141499B1 (en) 2017-12-30 2018-11-27 Spin Transfer Technologies, Inc. Perpendicular magnetic tunnel junction device with offset precessional spin current layer
US10319900B1 (en) 2017-12-30 2019-06-11 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with precessional spin current layer having a modulated moment density
US10468588B2 (en) 2018-01-05 2019-11-05 Spin Memory, Inc. Perpendicular magnetic tunnel junction device with skyrmionic enhancement layers for the precessional spin current magnetic layer
US10438995B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Devices including magnetic tunnel junctions integrated with selectors
US10438996B2 (en) 2018-01-08 2019-10-08 Spin Memory, Inc. Methods of fabricating magnetic tunnel junctions integrated with selectors
US10388861B1 (en) 2018-03-08 2019-08-20 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US10446744B2 (en) 2018-03-08 2019-10-15 Spin Memory, Inc. Magnetic tunnel junction wafer adaptor used in magnetic annealing furnace and method of using the same
US11107978B2 (en) 2018-03-23 2021-08-31 Spin Memory, Inc. Methods of manufacturing three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
US10734573B2 (en) 2018-03-23 2020-08-04 Spin Memory, Inc. Three-dimensional arrays with magnetic tunnel junction devices including an annular discontinued free magnetic layer and a planar reference magnetic layer
US10784437B2 (en) 2018-03-23 2020-09-22 Spin Memory, Inc. Three-dimensional arrays with MTJ devices including a free magnetic trench layer and a planar reference magnetic layer
US11107974B2 (en) 2018-03-23 2021-08-31 Spin Memory, Inc. Magnetic tunnel junction devices including a free magnetic trench layer and a planar reference magnetic layer
US10411185B1 (en) 2018-05-30 2019-09-10 Spin Memory, Inc. Process for creating a high density magnetic tunnel junction array test platform
US10559338B2 (en) 2018-07-06 2020-02-11 Spin Memory, Inc. Multi-bit cell read-out techniques
US10593396B2 (en) 2018-07-06 2020-03-17 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10692569B2 (en) 2018-07-06 2020-06-23 Spin Memory, Inc. Read-out techniques for multi-bit cells
US10600478B2 (en) 2018-07-06 2020-03-24 Spin Memory, Inc. Multi-bit cell read-out techniques for MRAM cells with mixed pinned magnetization orientations
US10650875B2 (en) 2018-08-21 2020-05-12 Spin Memory, Inc. System for a wide temperature range nonvolatile memory
US10699761B2 (en) 2018-09-18 2020-06-30 Spin Memory, Inc. Word line decoder memory architecture
US11621293B2 (en) 2018-10-01 2023-04-04 Integrated Silicon Solution, (Cayman) Inc. Multi terminal device stack systems and methods
US10971680B2 (en) 2018-10-01 2021-04-06 Spin Memory, Inc. Multi terminal device stack formation methods
US10580827B1 (en) 2018-11-16 2020-03-03 Spin Memory, Inc. Adjustable stabilizer/polarizer method for MRAM with enhanced stability and efficient switching
US11107979B2 (en) 2018-12-28 2021-08-31 Spin Memory, Inc. Patterned silicide structures and methods of manufacture
US11500042B2 (en) 2020-02-28 2022-11-15 Brown University Magnetic sensing devices based on interlayer exchange-coupled magnetic thin films

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5648885A (en) * 1995-08-31 1997-07-15 Hitachi, Ltd. Giant magnetoresistive effect sensor, particularly having a multilayered magnetic thin film layer
US5668688A (en) * 1996-05-24 1997-09-16 Quantum Peripherals Colorado, Inc. Current perpendicular-to-the-plane spin valve type magnetoresistive transducer
US5801984A (en) * 1996-11-27 1998-09-01 International Business Machines Corporation Magnetic tunnel junction device with ferromagnetic multilayer having fixed magnetic moment
US5898612A (en) * 1997-05-22 1999-04-27 Motorola, Inc. Magnetic memory cell with increased GMR ratio
US5828598A (en) * 1997-05-23 1998-10-27 Motorola, Inc. MRAM with high GMR ratio
US5959880A (en) * 1997-12-18 1999-09-28 Motorola, Inc. Low aspect ratio magnetoresistive tunneling junction
JP3831573B2 (ja) * 1998-07-21 2006-10-11 アルプス電気株式会社 スピンバルブ型薄膜素子の製造方法及びこのスピンバルブ型薄膜素子を用いた薄膜磁気ヘッドの製造方法

Also Published As

Publication number Publication date
CN1591675B (zh) 2011-11-09
EP1109168B1 (de) 2004-08-18
KR100748069B1 (ko) 2007-08-09
JP4969725B2 (ja) 2012-07-04
US6233172B1 (en) 2001-05-15
EP1109168A2 (de) 2001-06-20
CN1171323C (zh) 2004-10-13
EP1109168A3 (de) 2002-04-03
CN1309301A (zh) 2001-08-22
DE60013079T2 (de) 2005-01-27
SG87195A1 (en) 2002-03-19
KR20010062357A (ko) 2001-07-07
CN1591675A (zh) 2005-03-09
JP2001250999A (ja) 2001-09-14

Similar Documents

Publication Publication Date Title
DE60013079D1 (de) Doppeltes magnetisches Element mit zwei magnetischen Zustände und Herstellungsverfahren dafür
SG87185A1 (en) Magnetic element with improved field response and fabricating method thereof
DE60030703D1 (de) Informationsaufzeichnungselement und herstellungsverfahren
DE60228061D1 (de) Maschenware mit öffnung und herstellungsverfahren
DE60222985D1 (de) Magnetische Speicheranordnung und deren Herstellungsverfahren
DE59813893D1 (de) Piezoaktor mit neuer kontaktierung und herstellverfahren
DE69936461D1 (de) Magnetsensor und zugehöriges herstellungsverfahren
DE60037057D1 (de) Halbleiterelement und Herstellungsverfahren dafür
DE60132435D1 (de) Planarisierte halbleiterstruktur mit einer leitenden sicherung und dessen herstellungsverfahren
DE69942213D1 (de) Verbundmagnet, Herstellungsverfahren dafür und Magnetrolle
DE69929456D1 (de) Nahfeldabtastkopf und herstellungsverfahren
DE69813974T2 (de) Programmierbares gatterfeld mit erhöhter leistung
DE69821278D1 (de) Magnetkern und Herstellungsverfahren
DE60143666D1 (de) Flachbatterie und herstellungsverfahren dafür
DE60020737D1 (de) Sic-einkristall und herstellungsverfahren dafür
DE69931890D1 (de) Integrierter Leistungsschaltkreis mit vertikalem Stromfluss und dessen Herstellungsverfahren
DE59913865D1 (de) Klebstoff mit magnetischen nanopartikeln
DE69727261D1 (de) Element mit magnetoresistivem Effekt, sein Herstellungsverfahren und Magnetkopf daraus
DE60027532D1 (de) Mikroelektromechanische anordnung mit einkristallinen komponenten und metallischen komponenten und entsprechende herstellungsmethoden
DE69939540D1 (de) Integrierter soi-schaltkreis mit entkopplungskondensator und dessen herstellungsverfahren
DE60111709D1 (de) Reifen mit genau angeordneten und orientierten Elementen
DE69941874D1 (de) Optielektronisches bauelement und herstellungsverfahren
DE60119137D1 (de) Gleitelement und herstellungsverfahren dafür
DE60040203D1 (de) Ferromagnetisches doppelquantentopf-tunnelmagnetwiderstandsbauelement
DE60129014D1 (de) Aufzeichnungsblatt und dessen herstellungsverfahren

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US

8339 Ceased/non-payment of the annual fee