DE60003800D1 - Mit strontium dotierter siliziumschmelze zur verwendung in einem kristallzüchtungsverfahren - Google Patents

Mit strontium dotierter siliziumschmelze zur verwendung in einem kristallzüchtungsverfahren

Info

Publication number
DE60003800D1
DE60003800D1 DE60003800T DE60003800T DE60003800D1 DE 60003800 D1 DE60003800 D1 DE 60003800D1 DE 60003800 T DE60003800 T DE 60003800T DE 60003800 T DE60003800 T DE 60003800T DE 60003800 D1 DE60003800 D1 DE 60003800D1
Authority
DE
Germany
Prior art keywords
strontium
crystal growing
growing process
doped silicone
silicone melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60003800T
Other languages
English (en)
Other versions
DE60003800T2 (de
Inventor
Richard J Phillips
Steven J Keltner
D Holder
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Inc
Original Assignee
SunEdison Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Inc filed Critical SunEdison Inc
Publication of DE60003800D1 publication Critical patent/DE60003800D1/de
Application granted granted Critical
Publication of DE60003800T2 publication Critical patent/DE60003800T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
DE60003800T 1999-03-15 2000-03-14 Mit strontium dotierter siliziumschmelze zur verwendung in einem kristallzüchtungsverfahren Expired - Lifetime DE60003800T2 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12440099P 1999-03-15 1999-03-15
US124400P 1999-03-15
US521525 2000-03-08
US09/521,525 US6350312B1 (en) 1999-03-15 2000-03-08 Strontium doping of molten silicon for use in crystal growing process
PCT/US2000/006570 WO2000055395A1 (en) 1999-03-15 2000-03-14 Strontium doping of molten silicon for use in crystal growing process

Publications (2)

Publication Number Publication Date
DE60003800D1 true DE60003800D1 (de) 2003-08-14
DE60003800T2 DE60003800T2 (de) 2004-06-03

Family

ID=26822544

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60003800T Expired - Lifetime DE60003800T2 (de) 1999-03-15 2000-03-14 Mit strontium dotierter siliziumschmelze zur verwendung in einem kristallzüchtungsverfahren

Country Status (8)

Country Link
US (1) US6350312B1 (de)
EP (1) EP1169496B1 (de)
JP (1) JP4439741B2 (de)
KR (1) KR100681744B1 (de)
CN (1) CN1166821C (de)
DE (1) DE60003800T2 (de)
MY (1) MY136021A (de)
WO (1) WO2000055395A1 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1224574C (zh) * 2000-05-11 2005-10-26 德山株式会社 多晶硅、其生产方法及生产装置
US20040118156A1 (en) * 2001-03-08 2004-06-24 Gabriele Korus Method of producing a quartz glass crucible
US7118789B2 (en) 2001-07-16 2006-10-10 Heraeus Shin-Etsu America Silica glass crucible
JP2003095678A (ja) * 2001-07-16 2003-04-03 Heraeus Shin-Etsu America シリコン単結晶製造用ドープ石英ガラスルツボ及びその製造方法
US6641663B2 (en) 2001-12-12 2003-11-04 Heracus Shin-Estu America Silica crucible with inner layer crystallizer and method
US20040187767A1 (en) * 2002-10-24 2004-09-30 Intel Corporation Device and method for multicrystalline silicon wafers
JP4719835B2 (ja) * 2004-09-13 2011-07-06 島根県 シリカ多孔体結晶の製造方法
US7383696B2 (en) * 2005-09-08 2008-06-10 Heraeus Shin-Etsu America, Inc. Silica glass crucible with bubble-free and reduced bubble growth wall
US7427327B2 (en) * 2005-09-08 2008-09-23 Heraeus Shin-Etsu America, Inc. Silica glass crucible with barium-doped inner wall
JP5034246B2 (ja) * 2006-02-01 2012-09-26 株式会社Ｓｕｍｃｏ シリコン単結晶の製造方法およびシリコン単結晶
US20090120353A1 (en) * 2007-11-13 2009-05-14 Memc Electronic Materials, Inc. Reduction of air pockets in silicon crystals by avoiding the introduction of nearly-insoluble gases into the melt
WO2011009062A2 (en) * 2009-07-16 2011-01-20 Memc Singapore Pte, Ltd. Coated crucibles and methods for preparing and use thereof
US20190062943A1 (en) * 2016-03-23 2019-02-28 Momentive Performance Materials Inc. Devitrification agent for quartz glass crucible crystal growing process
CN106591942B (zh) * 2016-12-30 2019-06-11 江西赛维Ldk太阳能高科技有限公司 多晶硅铸锭用坩埚及其制备方法和多晶硅锭及其制备方法
US20240035198A1 (en) * 2022-07-29 2024-02-01 Globalwafers Co., Ltd. Systems and methods for forming single crystal silicon ingots with crucibles having a synthetic liner

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2872299A (en) 1954-11-30 1959-02-03 Rca Corp Preparation of reactive materials in a molten non-reactive lined crucible
JP3100836B2 (ja) 1994-06-20 2000-10-23 信越石英株式会社 石英ガラスルツボとその製造方法
EP0691423B1 (de) 1994-07-06 1999-03-24 Shin-Etsu Handotai Company Limited Verfahren zur Herstellung von Silizium-Einkristall und Tiegel aus geschmolzenem Silika dafür
JPH08217592A (ja) 1995-02-17 1996-08-27 Toshiba Ceramics Co Ltd シリコン単結晶製造用石英ルツボ
JPH08239231A (ja) 1995-03-02 1996-09-17 Shin Etsu Chem Co Ltd 石英ルツボの製造方法
JP2811290B2 (ja) 1995-04-04 1998-10-15 信越石英株式会社 シリコン単結晶引き上げ用石英ガラスルツボ
JP2830990B2 (ja) 1995-05-31 1998-12-02 信越石英株式会社 石英製二重ルツボの製造方法
US5976247A (en) 1995-06-14 1999-11-02 Memc Electronic Materials, Inc. Surface-treated crucibles for improved zero dislocation performance
US5980629A (en) 1995-06-14 1999-11-09 Memc Electronic Materials, Inc. Methods for improving zero dislocation yield of single crystals
JP4237280B2 (ja) 1997-07-02 2009-03-11 信越半導体株式会社 シリコン単結晶の製造方法

Also Published As

Publication number Publication date
WO2000055395A1 (en) 2000-09-21
CN1343264A (zh) 2002-04-03
JP4439741B2 (ja) 2010-03-24
EP1169496B1 (de) 2003-07-09
US6350312B1 (en) 2002-02-26
CN1166821C (zh) 2004-09-15
JP2002539069A (ja) 2002-11-19
DE60003800T2 (de) 2004-06-03
EP1169496A1 (de) 2002-01-09
KR20010102426A (ko) 2001-11-15
MY136021A (en) 2008-07-31
KR100681744B1 (ko) 2007-02-15

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