DE59906526D1 - Perforierte silizium-membran, hergestellt mittels eines elektrochemischen ätzverfahrens - Google Patents

Perforierte silizium-membran, hergestellt mittels eines elektrochemischen ätzverfahrens

Info

Publication number
DE59906526D1
DE59906526D1 DE59906526T DE59906526T DE59906526D1 DE 59906526 D1 DE59906526 D1 DE 59906526D1 DE 59906526 T DE59906526 T DE 59906526T DE 59906526 T DE59906526 T DE 59906526T DE 59906526 D1 DE59906526 D1 DE 59906526D1
Authority
DE
Germany
Prior art keywords
etching process
electrochemical etching
silicon membrane
perforated silicon
perforated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE59906526T
Other languages
English (en)
Inventor
Volker Lehmann
Hans Reisinger
Hermann Wendt
Reinhard Stengl
Gerrit Lange
Stefan Ottow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies AG
Original Assignee
Infineon Technologies AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infineon Technologies AG filed Critical Infineon Technologies AG
Application granted granted Critical
Publication of DE59906526D1 publication Critical patent/DE59906526D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • C25F3/12—Etching of semiconducting materials
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • C25F3/02—Etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24273—Structurally defined web or sheet [e.g., overall dimension, etc.] including aperture
    • Y10T428/24322—Composite web or sheet
    • Y10T428/24331—Composite web or sheet including nonapertured component

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Micromachines (AREA)
DE59906526T 1998-05-08 1999-05-03 Perforierte silizium-membran, hergestellt mittels eines elektrochemischen ätzverfahrens Expired - Lifetime DE59906526D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19820756A DE19820756C1 (de) 1998-05-08 1998-05-08 Perforiertes Werkstück und Verfahren zu dessen Herstellung
PCT/DE1999/001292 WO1999058746A1 (de) 1998-05-08 1999-05-03 Perforiertes silizium-membran hergestellt mittels eines elektrochemischen ätverfahrens

Publications (1)

Publication Number Publication Date
DE59906526D1 true DE59906526D1 (de) 2003-09-11

Family

ID=7867190

Family Applications (2)

Application Number Title Priority Date Filing Date
DE19820756A Expired - Fee Related DE19820756C1 (de) 1998-05-08 1998-05-08 Perforiertes Werkstück und Verfahren zu dessen Herstellung
DE59906526T Expired - Lifetime DE59906526D1 (de) 1998-05-08 1999-05-03 Perforierte silizium-membran, hergestellt mittels eines elektrochemischen ätzverfahrens

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE19820756A Expired - Fee Related DE19820756C1 (de) 1998-05-08 1998-05-08 Perforiertes Werkstück und Verfahren zu dessen Herstellung

Country Status (7)

Country Link
US (1) US6558770B1 (de)
EP (1) EP1084285B1 (de)
JP (1) JP2002514689A (de)
KR (1) KR20010052320A (de)
DE (2) DE19820756C1 (de)
TW (1) TW552322B (de)
WO (1) WO1999058746A1 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6924058B2 (en) * 1999-11-17 2005-08-02 Leroy J. Ohlsen Hydrodynamic transport and flow channel passageways associated with fuel cell electrode structures and fuel cell electrode stack assemblies
US6808840B2 (en) * 1999-11-17 2004-10-26 Neah Power Systems, Inc. Silicon-based fuel cell electrode structures and fuel cell electrode stack assemblies
US6720105B2 (en) * 1999-11-17 2004-04-13 Neah Power Systems, Inc. Metallic blocking layers integrally associated with fuel cell electrode structures and fuel cell electrode stack assemblies
CN1205685C (zh) * 1999-11-17 2005-06-08 尼电源系统公司 具有硅基片的燃料电池
DE10052007C1 (de) * 2000-10-20 2002-03-07 Infineon Technologies Ag Halbleiterbauelement mit durchgehenden Kompensationszonen
DE10122839B4 (de) * 2001-05-11 2007-11-29 Qimonda Ag Verfahren zum Vereinzeln von Halbleiterstrukturen sowie zum Vereinzeln vorbereitetes Halbleitersubstrat
EP1258937A1 (de) * 2001-05-17 2002-11-20 STMicroelectronics S.r.l. Mikro-Silizium-Brennstoffzelle, Verfahren zur Herstellung und autonome Halbleitervorrichtung mit Mikro-Brennstoffzelle
KR100451132B1 (ko) * 2001-11-08 2004-10-02 홍석인 다공성 실리콘을 이용한 효소고정화 전극 제작 방법
CA2472232A1 (en) * 2002-01-03 2003-07-17 Neah Power Systems, Inc. Porous fuel cell electrode structures having conformal electrically conductive layers thereon
DE10217569A1 (de) * 2002-04-19 2003-11-13 Infineon Technologies Ag Vorrichtung auf Basis von partiell oxidiertem porösen Silizium
MD2449G2 (ro) * 2003-03-14 2004-11-30 Ион ТИГИНЯНУ Procedeu de obţinere a membranelor perforate ultrasubţiri
DE10318995B4 (de) * 2003-04-25 2006-04-20 Christian-Albrechts-Universität Zu Kiel Verfahren zur Herstellung von durchgängigen Membranen
DE10362083B4 (de) * 2003-04-25 2007-05-03 Christian-Albrechts-Universität Zu Kiel Verfahren zur Herstellung von Membranen mit durchgängigen Poren
US7081158B2 (en) * 2003-11-21 2006-07-25 Imaje S.A. Ink composition for continuous deflected jet printing, especially on letters and postal articles
DE102005010080B4 (de) * 2005-03-03 2008-04-03 Qimonda Ag Verfahren zum Herstellen einer Dünnschicht-Struktur
ITVA20050034A1 (it) * 2005-05-13 2006-11-14 St Microelectronics Srl Celle a combustibile realizzate in un singolo strato di silicio monocristallino e processo di fabbricazione
US7615161B2 (en) * 2005-08-19 2009-11-10 General Electric Company Simplified way to manufacture a low cost cast type collimator assembly
EP1798799B1 (de) * 2005-12-16 2008-09-24 STMicroelectronics S.r.l. Brennstoffzelle flächig integriert auf einem monokristallinen Silikonschaltkreis und Verfahren zur Herstellung
KR100731549B1 (ko) * 2006-07-21 2007-06-22 이노필터 주식회사 다공성 복합 세라믹 분리막 제조방법과, 이에 의해 제조된다공성 복합 세라믹 분리막
EP2154269A4 (de) * 2007-05-09 2012-11-21 Quantum 14 Kk Verfahren zur verarbeitung von siliciumbasismaterial, nach dem verfahren verarbeiteter gegenstand und verarbeitungsvorrichtung
TWI464108B (zh) * 2012-01-17 2014-12-11 Nat Univ Kaohsiung The preparation of porous silicon nanowires and the prepared porous silicon nanowires
TWI500825B (zh) * 2013-05-02 2015-09-21 Nat Univ Tsing Hua Ｖ－ｖｉ族半導體之奈米片狀陣列結構之製備方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4044222A (en) * 1976-01-16 1977-08-23 Western Electric Company, Inc. Method of forming tapered apertures in thin films with an energy beam
US4570173A (en) * 1981-05-26 1986-02-11 General Electric Company High-aspect-ratio hollow diffused regions in a semiconductor body
US5139624A (en) * 1990-12-06 1992-08-18 Sri International Method for making porous semiconductor membranes
DE4202454C1 (de) * 1992-01-29 1993-07-29 Siemens Ag, 8000 Muenchen, De
EP0630058A3 (de) * 1993-05-19 1995-03-15 Siemens Ag Verfahren zur Herstellung einer Pyrodetektoranordnung durch elektronisches Ätzen eines Silizium Substrats.
DE4426507C2 (de) * 1994-07-27 2001-04-26 Inst Chemo Biosensorik Sensoren auf der Basis von Mikrostrukturen
US5997713A (en) * 1997-05-08 1999-12-07 Nanosciences Corporation Silicon etching process for making microchannel plates

Also Published As

Publication number Publication date
WO1999058746A1 (de) 1999-11-18
KR20010052320A (ko) 2001-06-25
EP1084285B1 (de) 2003-08-06
US6558770B1 (en) 2003-05-06
EP1084285A1 (de) 2001-03-21
TW552322B (en) 2003-09-11
JP2002514689A (ja) 2002-05-21
DE19820756C1 (de) 1999-11-11

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