DE60016273D1 - Eine anordnung kapazitiver, mikromechanischer ultraschallwandlerelemente mit durchkontaktierung durch das trägersubstrat - Google Patents

Eine anordnung kapazitiver, mikromechanischer ultraschallwandlerelemente mit durchkontaktierung durch das trägersubstrat

Info

Publication number
DE60016273D1
DE60016273D1 DE60016273T DE60016273T DE60016273D1 DE 60016273 D1 DE60016273 D1 DE 60016273D1 DE 60016273 T DE60016273 T DE 60016273T DE 60016273 T DE60016273 T DE 60016273T DE 60016273 D1 DE60016273 D1 DE 60016273D1
Authority
DE
Germany
Prior art keywords
capacitive
arrangement
contact
ultrasonic transducer
carrier substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60016273T
Other languages
English (en)
Other versions
DE60016273T2 (de
Inventor
T Khuri-Yakub
Levent Degertekin
Sam Calmes
Xuecheng Jin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Leland Stanford Junior University
Original Assignee
Leland Stanford Junior University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Leland Stanford Junior University filed Critical Leland Stanford Junior University
Application granted granted Critical
Publication of DE60016273D1 publication Critical patent/DE60016273D1/de
Publication of DE60016273T2 publication Critical patent/DE60016273T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76898—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics formed through a semiconductor substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B06—GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS IN GENERAL
    • B06B—METHODS OR APPARATUS FOR GENERATING OR TRANSMITTING MECHANICAL VIBRATIONS OF INFRASONIC, SONIC, OR ULTRASONIC FREQUENCY, e.g. FOR PERFORMING MECHANICAL WORK IN GENERAL
    • B06B1/00—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency
    • B06B1/02—Methods or apparatus for generating mechanical vibrations of infrasonic, sonic, or ultrasonic frequency making use of electrical energy
    • B06B1/0292—Electrostatic transducers, e.g. electret-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/481—Internal lead connections, e.g. via connections, feedthrough structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0556—Disposition
    • H01L2224/05568—Disposition the whole external layer protruding from the surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05573—Single external layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/16145—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
DE60016273T 1999-09-30 2000-09-29 Eine anordnung kapazitiver, mikromechanischer ultraschallwandlerelemente mit durchkontaktierung durch das trägersubstrat Expired - Lifetime DE60016273T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15825499P 1999-09-30 1999-09-30
US09/667,203 US6430109B1 (en) 1999-09-30 2000-09-21 Array of capacitive micromachined ultrasonic transducer elements with through wafer via connections
PCT/US2000/026852 WO2001023105A1 (en) 1999-09-30 2000-09-29 An array of capacitive micromachined ultrasonic transducer elements with through wafer via connections

Publications (2)

Publication Number Publication Date
DE60016273D1 true DE60016273D1 (de) 2004-12-30
DE60016273T2 DE60016273T2 (de) 2005-04-21

Family

ID=26854872

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60016273T Expired - Lifetime DE60016273T2 (de) 1999-09-30 2000-09-29 Eine anordnung kapazitiver, mikromechanischer ultraschallwandlerelemente mit durchkontaktierung durch das trägersubstrat

Country Status (5)

Country Link
US (1) US6430109B1 (de)
EP (1) EP1225984B1 (de)
JP (1) JP3924466B2 (de)
DE (1) DE60016273T2 (de)
WO (1) WO2001023105A1 (de)

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US20020115198A1 (en) * 2000-09-20 2002-08-22 Nerenberg Michael I. Microfabricated ultrasound array for use as resonant sensors
US6621137B1 (en) * 2000-10-12 2003-09-16 Intel Corporation MEMS device integrated chip package, and method of making same
US6669644B2 (en) * 2001-07-31 2003-12-30 Koninklijke Philips Electronics N.V. Micro-machined ultrasonic transducer (MUT) substrate that limits the lateral propagation of acoustic energy
US20030057544A1 (en) * 2001-09-13 2003-03-27 Nathan Richard J. Integrated assembly protocol
US20030059976A1 (en) * 2001-09-24 2003-03-27 Nathan Richard J. Integrated package and methods for making same
US6659954B2 (en) * 2001-12-19 2003-12-09 Koninklijke Philips Electronics Nv Micromachined ultrasound transducer and method for fabricating same
US20030153119A1 (en) * 2002-02-14 2003-08-14 Nathan Richard J. Integrated circuit package and method for fabrication
US6767751B2 (en) * 2002-05-28 2004-07-27 Silicon Light Machines, Inc. Integrated driver process flow
US6958255B2 (en) * 2002-08-08 2005-10-25 The Board Of Trustees Of The Leland Stanford Junior University Micromachined ultrasonic transducers and method of fabrication
US6831394B2 (en) * 2002-12-11 2004-12-14 General Electric Company Backing material for micromachined ultrasonic transducer devices
US6836020B2 (en) * 2003-01-22 2004-12-28 The Board Of Trustees Of The Leland Stanford Junior University Electrical through wafer interconnects
US7332850B2 (en) * 2003-02-10 2008-02-19 Siemens Medical Solutions Usa, Inc. Microfabricated ultrasonic transducers with curvature and method for making the same
US6936918B2 (en) * 2003-12-15 2005-08-30 Analog Devices, Inc. MEMS device with conductive path through substrate
US7030536B2 (en) * 2003-12-29 2006-04-18 General Electric Company Micromachined ultrasonic transducer cells having compliant support structure
US20050219953A1 (en) * 2004-04-06 2005-10-06 The Board Of Trustees Of The Leland Stanford Junior University Method and system for operating capacitive membrane ultrasonic transducers
JP4624763B2 (ja) * 2004-10-27 2011-02-02 オリンパス株式会社 静電容量型超音波振動子、及びその製造方法
US7375420B2 (en) * 2004-12-03 2008-05-20 General Electric Company Large area transducer array
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US7589456B2 (en) * 2005-06-14 2009-09-15 Siemens Medical Solutions Usa, Inc. Digital capacitive membrane transducer
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US8372680B2 (en) 2006-03-10 2013-02-12 Stc.Unm Three-dimensional, ultrasonic transducer arrays, methods of making ultrasonic transducer arrays, and devices including ultrasonic transducer arrays
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US8358047B2 (en) * 2008-09-29 2013-01-22 Xerox Corporation Buried traces for sealed electrostatic membrane actuators or sensors
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US8402831B2 (en) * 2009-03-05 2013-03-26 The Board Of Trustees Of The Leland Standford Junior University Monolithic integrated CMUTs fabricated by low-temperature wafer bonding
JP5851238B6 (ja) 2009-03-05 2023-12-15 株式会社日立メディコ 超音波トランスデューサ、その製造方法、および、それを用いた超音波探触子
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JP5495918B2 (ja) * 2009-07-24 2014-05-21 キヤノン株式会社 電気機械変換装置、及び電気機械変換装置の作製方法
US8531919B2 (en) * 2009-09-21 2013-09-10 The Hong Kong Polytechnic University Flexible capacitive micromachined ultrasonic transducer array with increased effective capacitance
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JP5677016B2 (ja) 2010-10-15 2015-02-25 キヤノン株式会社 電気機械変換装置及びその作製方法
JP5603739B2 (ja) 2010-11-02 2014-10-08 キヤノン株式会社 静電容量型電気機械変換装置
US9864190B2 (en) 2011-02-24 2018-01-09 The Board Of Trustees Of The Leland Stanford Junior University Confocal microscope, system and method therefor
JP5875243B2 (ja) * 2011-04-06 2016-03-02 キヤノン株式会社 電気機械変換装置及びその作製方法
JP5802448B2 (ja) * 2011-06-21 2015-10-28 オリンパス株式会社 超音波ユニット、超音波内視鏡および超音波ユニットの製造方法
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US9375850B2 (en) 2013-02-07 2016-06-28 Fujifilm Dimatix, Inc. Micromachined ultrasonic transducer devices with metal-semiconductor contact for reduced capacitive cross-talk
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US10605903B2 (en) 2014-03-18 2020-03-31 Duke University pMUT array for ultrasonic imaging, and related apparatuses, systems, and methods
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Also Published As

Publication number Publication date
JP2003527947A (ja) 2003-09-24
JP3924466B2 (ja) 2007-06-06
EP1225984A1 (de) 2002-07-31
EP1225984B1 (de) 2004-11-24
WO2001023105A1 (en) 2001-04-05
DE60016273T2 (de) 2005-04-21
US6430109B1 (en) 2002-08-06
WO2001023105A8 (en) 2001-08-16

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