DE50307712D1 - Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation - Google Patents

Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation

Info

Publication number
DE50307712D1
DE50307712D1 DE50307712T DE50307712T DE50307712D1 DE 50307712 D1 DE50307712 D1 DE 50307712D1 DE 50307712 T DE50307712 T DE 50307712T DE 50307712 T DE50307712 T DE 50307712T DE 50307712 D1 DE50307712 D1 DE 50307712D1
Authority
DE
Germany
Prior art keywords
crucible
crystallization
polycrystalline structure
production
section
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE50307712T
Other languages
English (en)
Inventor
Nikolai V Abrosimov
Helge Riemann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Pv Silicon Forschungs und Produktions 99 De GmbH
Original Assignee
PV SILICON FORSCHUNGS und PROD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by PV SILICON FORSCHUNGS und PROD filed Critical PV SILICON FORSCHUNGS und PROD
Application granted granted Critical
Publication of DE50307712D1 publication Critical patent/DE50307712D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/08—Downward pulling
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1052—Seed pulling including a sectioned crucible [e.g., double crucible, baffle]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
    • Y10T117/1032—Seed pulling
    • Y10T117/1056—Seed pulling including details of precursor replenishment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE50307712T 2002-05-06 2003-05-06 Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation Expired - Lifetime DE50307712D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10220964A DE10220964B4 (de) 2002-05-06 2002-05-06 Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation
PCT/DE2003/001515 WO2003093540A1 (de) 2002-05-06 2003-05-06 Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation

Publications (1)

Publication Number Publication Date
DE50307712D1 true DE50307712D1 (de) 2007-08-30

Family

ID=29285284

Family Applications (2)

Application Number Title Priority Date Filing Date
DE10220964A Expired - Fee Related DE10220964B4 (de) 2002-05-06 2002-05-06 Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation
DE50307712T Expired - Lifetime DE50307712D1 (de) 2002-05-06 2003-05-06 Anordnung zur herstellung von kristallstäben mit definiertem querschnitt und kolumnarer polykristalliner struktur mittels tiegelfreier kontinuierlicher kristallisation

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE10220964A Expired - Fee Related DE10220964B4 (de) 2002-05-06 2002-05-06 Anordnung zur Herstellung von Kristallstäben mit definiertem Querschnitt und kolumnarer polykristalliner Struktur mittels tiegelfreier kontinuierlicher Kristallisation

Country Status (10)

Country Link
US (1) US7326297B2 (de)
EP (1) EP1509642B1 (de)
JP (1) JP4555677B2 (de)
AT (1) ATE367462T1 (de)
AU (1) AU2003229290A1 (de)
DE (2) DE10220964B4 (de)
DK (1) DK1509642T3 (de)
ES (1) ES2290458T3 (de)
NO (1) NO20045319L (de)
WO (1) WO2003093540A1 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005063346B4 (de) * 2005-04-06 2010-10-28 Pv Silicon Forschungs Und Produktions Gmbh Verfahren zur Herstellung einer einkristallinen Si-Scheibe mit annähernd rundem polygonalem Querschnitt
JP5073257B2 (ja) * 2006-09-27 2012-11-14 Ｓｕｍｃｏ Ｔｅｃｈｘｉｖ株式会社 単結晶製造装置及び方法
WO2011063795A1 (de) * 2009-11-24 2011-06-03 Forschungsverbund Berlin E. V. Verfahren und vorrichtung zur herstellung von einkristallen aus halbleitermaterial
DE102012213506A1 (de) * 2012-07-31 2014-02-06 Siltronic Ag Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102012215677B3 (de) * 2012-09-04 2013-10-10 Siltronic Ag Verfahren zum Herstellen eines Einkristalls aus Silizium
JP2014062044A (ja) * 2013-12-11 2014-04-10 National Institute For Materials Science 四角形の単結晶シリコンウェ−ハ
DE102014207149A1 (de) * 2014-04-14 2015-10-29 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Einkristalls aus Silizium
DE102014210936B3 (de) * 2014-06-06 2015-10-22 Siltronic Ag Vorrichtung und Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
DE102014226419A1 (de) 2014-12-18 2016-06-23 Siltronic Ag Verfahren zum Züchten eines Einkristalls durch Kristallisieren des Einkristalls aus einer Fließzone
CN114941171B (zh) * 2022-05-25 2023-03-24 宇泽半导体(云南)有限公司 一种用直拉法生长准矩形柱体单晶硅的装置和工艺方法
CN116288650B (zh) * 2023-05-24 2023-08-29 苏州晨晖智能设备有限公司 以颗粒硅为原料的硅单晶生长装置和生长方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1220832B (de) * 1964-09-22 1966-07-14 Siemens Ag Ziehduese zum Ziehen von Halbleiterkristallen aus einer Schmelze
US4565600A (en) * 1981-04-27 1986-01-21 Criceram Processes for the continuous preparation of single crystals
DE3531610A1 (de) * 1985-09-04 1987-03-05 Wacker Chemitronic Verfahren und vorrichtung zur herstellung von siliciumstaeben
JP3309141B2 (ja) * 1991-12-18 2002-07-29 ノヴァ・サイエンス株式会社 電子ビーム溶解による結晶シリコンインゴットの鋳造方法および装置
JP2874722B2 (ja) * 1993-06-18 1999-03-24 信越半導体株式会社 シリコン単結晶の成長方法及び装置
DE4323793A1 (de) * 1993-07-15 1995-01-19 Wacker Chemitronic Verfahren zur Herstellung von Stäben oder Blöcken aus beim Erstarren sich ausdehnendem Halbleitermaterial durch Kristallisieren einer aus Granulat erzeugten Schmelze sowie Vorrichtung zu seiner Durchführung
JP2833478B2 (ja) * 1994-05-18 1998-12-09 信越半導体株式会社 シリコン単結晶成長方法
JPH08333188A (ja) * 1995-04-06 1996-12-17 Komatsu Electron Metals Co Ltd Ｆｚ法による半導体単結晶製造装置
DE19538020A1 (de) * 1995-10-12 1997-04-17 Wacker Siltronic Halbleitermat Verfahren und Vorrichtung zur Herstellung von Einkristallen aus Silicium
DE19610650B4 (de) * 1996-03-06 2004-03-18 Forschungsverbund Berlin E.V. Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterialstäben
JP3759807B2 (ja) * 1997-03-12 2006-03-29 日本碍子株式会社 酸化物単結晶体の製造方法およびその装置

Also Published As

Publication number Publication date
US7326297B2 (en) 2008-02-05
ES2290458T3 (es) 2008-02-16
DE10220964A8 (de) 2004-07-08
AU2003229290A1 (en) 2003-11-17
DK1509642T3 (da) 2007-11-05
ATE367462T1 (de) 2007-08-15
NO20045319L (no) 2004-12-03
EP1509642B1 (de) 2007-07-18
US20050188918A1 (en) 2005-09-01
EP1509642A1 (de) 2005-03-02
JP4555677B2 (ja) 2010-10-06
JP2005529046A (ja) 2005-09-29
DE10220964B4 (de) 2006-11-02
DE10220964A1 (de) 2003-11-27
WO2003093540A1 (de) 2003-11-13

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Owner name: PV SILICON FORSCHUNGS UND PRODUKTIONS GMBH, 99, DE