DE4335457A1 - Verfahren zur Bildung eines Gate-Isolationsfilms einer Halbleitervorrichtung - Google Patents

Verfahren zur Bildung eines Gate-Isolationsfilms einer Halbleitervorrichtung

Info

Publication number
DE4335457A1
DE4335457A1 DE4335457A DE4335457A DE4335457A1 DE 4335457 A1 DE4335457 A1 DE 4335457A1 DE 4335457 A DE4335457 A DE 4335457A DE 4335457 A DE4335457 A DE 4335457A DE 4335457 A1 DE4335457 A1 DE 4335457A1
Authority
DE
Germany
Prior art keywords
film
oxide film
nitriding
gate insulation
silicon substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE4335457A
Other languages
German (de)
English (en)
Inventor
Hyun Sang Hwang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Goldstar Electron Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Goldstar Electron Co Ltd filed Critical Goldstar Electron Co Ltd
Publication of DE4335457A1 publication Critical patent/DE4335457A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01332—Making the insulator
    • H10D64/01336—Making the insulator on single crystalline silicon, e.g. chemical oxidation using a liquid
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H10P14/6512—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials by exposure to a gas or vapour

Landscapes

  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE4335457A 1992-10-20 1993-10-18 Verfahren zur Bildung eines Gate-Isolationsfilms einer Halbleitervorrichtung Ceased DE4335457A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019920019239A KR960002066B1 (ko) 1992-10-20 1992-10-20 옥시 나이트라이드 제조방법

Publications (1)

Publication Number Publication Date
DE4335457A1 true DE4335457A1 (de) 1994-04-21

Family

ID=19341412

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4335457A Ceased DE4335457A1 (de) 1992-10-20 1993-10-18 Verfahren zur Bildung eines Gate-Isolationsfilms einer Halbleitervorrichtung

Country Status (4)

Country Link
JP (1) JPH06209009A (enExample)
KR (1) KR960002066B1 (enExample)
DE (1) DE4335457A1 (enExample)
TW (1) TW228613B (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5103478B2 (ja) 2007-09-10 2012-12-19 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置の製造方法
JP4902716B2 (ja) 2008-11-20 2012-03-21 株式会社日立国際電気 不揮発性半導体記憶装置およびその製造方法

Non-Patent Citations (8)

* Cited by examiner, † Cited by third party
Title
et.al.: Characteristics of Thermal Si- licon Nitride Films Grown in Argon-Diluted Ammo- nia. In: Analytical Chemistry, 1987, H.7., S.1799-1802 *
et.al.: Improved ultrathin oxynitri-de formed by thermal nitridation and low pressure chemical vapor deposition process. In: Appl.Phys. Lett., 61, 15, 12. Oct. 1992, S.1790-1792 *
et.al.: Nitridation and Post-Ni-tridation Anneals of SiO¶2¶ for Ultrathin Dielec- trics. In: IEEE Transactions on Electron Devices, Vol.37, No.8, Aug.1990, S.1836-1841 *
MAITI, Bikas *
MOSLEHI, Mehrdad M. *
SARASWAT, Krishna C.: ThermalNitridation of Si and SiO¶2¶ for VLSI. In: IEEE Journal of Solid-State Circuits, Vol.SC-20,No.1, Feb.1985, S.26-43 *
SUN, S.W. *
WRIGHT, Peter J. *

Also Published As

Publication number Publication date
JPH06209009A (ja) 1994-07-26
TW228613B (enExample) 1994-08-21
KR960002066B1 (ko) 1996-02-10
KR940010209A (ko) 1994-05-24

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Legal Events

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8105 Search report available
8110 Request for examination paragraph 44
8131 Rejection