DE4243053C2 - Voluminöser Oxid-Supraleiter in Form eines Einkristalls und Verfahren zu dessen Herstellung - Google Patents

Voluminöser Oxid-Supraleiter in Form eines Einkristalls und Verfahren zu dessen Herstellung

Info

Publication number
DE4243053C2
DE4243053C2 DE4243053A DE4243053A DE4243053C2 DE 4243053 C2 DE4243053 C2 DE 4243053C2 DE 4243053 A DE4243053 A DE 4243053A DE 4243053 A DE4243053 A DE 4243053A DE 4243053 C2 DE4243053 C2 DE 4243053C2
Authority
DE
Germany
Prior art keywords
crystal
layers
shaped body
temperature
phase formation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE4243053A
Other languages
German (de)
English (en)
Other versions
DE4243053A1 (enExample
Inventor
Mitsuru Morita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Publication of DE4243053A1 publication Critical patent/DE4243053A1/de
Application granted granted Critical
Publication of DE4243053C2 publication Critical patent/DE4243053C2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/225—Complex oxides based on rare earth copper oxides, e.g. high T-superconductors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details
    • H10N60/85—Superconducting active materials
    • H10N60/855—Ceramic superconductors
    • H10N60/857—Ceramic superconductors comprising copper oxide
    • H10N60/858—Ceramic superconductors comprising copper oxide having multilayered structures, e.g. superlattices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
    • Y10S505/779—Other rare earth, i.e. Sc,Y,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and alkaline earth, i.e. Ca,Sr,Ba,Ra
    • Y10S505/78—Yttrium and barium-, e.g. YBa2Cu307
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/776—Containing transition metal oxide with rare earth or alkaline earth
    • Y10S505/779—Other rare earth, i.e. Sc,Y,Ce,Pr,Nd,Pm,Sm,Eu,Gd,Tb,Dy,Ho,Er,Tm,Yb,Lu and alkaline earth, i.e. Ca,Sr,Ba,Ra
    • Y10S505/78—Yttrium and barium-, e.g. YBa2Cu307
    • Y10S505/781—Noble metal, i.e. Ag, Au, Os, Ir, Pt, Ru, Rh, Pd or chromium, manganese, iron, cobalt or nickel
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S505/00—Superconductor technology: apparatus, material, process
    • Y10S505/775—High tc, above 30 k, superconducting material
    • Y10S505/785—Composition containing superconducting material and diverse nonsuperconducting material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/18—Longitudinally sectional layer of three or more sections
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Superconductors And Manufacturing Methods Therefor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Superconductor Devices And Manufacturing Methods Thereof (AREA)
DE4243053A 1991-12-20 1992-12-18 Voluminöser Oxid-Supraleiter in Form eines Einkristalls und Verfahren zu dessen Herstellung Expired - Lifetime DE4243053C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3354469A JP2838742B2 (ja) 1991-12-20 1991-12-20 酸化物バルク超電導体およびその製造方法

Publications (2)

Publication Number Publication Date
DE4243053A1 DE4243053A1 (enExample) 1993-06-24
DE4243053C2 true DE4243053C2 (de) 2001-07-19

Family

ID=18437772

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4243053A Expired - Lifetime DE4243053C2 (de) 1991-12-20 1992-12-18 Voluminöser Oxid-Supraleiter in Form eines Einkristalls und Verfahren zu dessen Herstellung

Country Status (5)

Country Link
US (1) US5571776A (enExample)
JP (1) JP2838742B2 (enExample)
DE (1) DE4243053C2 (enExample)
FR (1) FR2685978B1 (enExample)
GB (1) GB2262519B (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06321695A (ja) * 1993-05-10 1994-11-22 Kokusai Chodendo Sangyo Gijutsu Kenkyu Center Ｙ１２３型結晶構造を有する酸化物結晶膜及び膜積層体
AU4748096A (en) * 1995-01-12 1996-07-31 University Of Chicago, The Large single domain 123 material produced by seeding with single crystal rare earth barium copper oxide single crystals
US5776864A (en) * 1995-01-12 1998-07-07 The University Of Chicago Large single domain 123 material produced by seeding with single crystal rare earth barium copper oxide single crystals
FR2744715B1 (fr) * 1996-01-05 2003-01-24 Univ Princeton Procede de production de monocristaux supraconducteurs ceramiques
DE19601771C1 (de) * 1996-01-19 1997-04-10 Karlsruhe Forschzent Verfahren zur Herstellung von optimierten, schmelztexturierten Volumenproben auf der Basis des Hochtemperatursupraleiters YBa¶2¶Cu¶3¶O¶7¶ (YBCO)
JP2967154B2 (ja) * 1996-08-02 1999-10-25 同和鉱業株式会社 Ａｇを含み結晶方位の揃った酸化物超電導体及びその製造方法
US6256521B1 (en) 1997-09-16 2001-07-03 Ut-Battelle, Llc Preferentially oriented, High temperature superconductors by seeding and a method for their preparation
DE19908597A1 (de) * 1999-02-27 2000-09-14 Aventis Res & Tech Gmbh & Co Verfahren zum Vergüten eines Supraleitermaterials mit hoher Remanenzinduktion, vergütetes Supraleitermaterial und dessen Verwendung
JP4109409B2 (ja) * 2000-03-10 2008-07-02 新日本製鐵株式会社 大型超電導体およびその作製方法
JP4660326B2 (ja) * 2005-09-08 2011-03-30 新日本製鐵株式会社 酸化物超電導材料の製造方法およびその前駆体支持用基材
JP4806742B2 (ja) * 2005-11-07 2011-11-02 アイシン精機株式会社 磁場発生装置及び核磁気共鳴装置
JP2013136815A (ja) * 2011-12-28 2013-07-11 Fujikura Ltd レーザーアブレーション用ターゲットとそれを用いた酸化物超電導線材の製造方法および酸化物超電導線材
CN105420811A (zh) * 2015-12-25 2016-03-23 上海交通大学 利用片状rebco单晶生长rebco准单晶的方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991019029A1 (fr) * 1990-06-07 1991-12-12 Nippon Steel Corporation Supraconducteur a oxyde et procede de production associe

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6464731A (en) * 1987-08-31 1989-03-10 Sharp Kk Feeding device for fastener parts
JPH02153803A (ja) * 1988-06-06 1990-06-13 Nippon Steel Corp 酸化物超電導バルク材料およびその製造方法
US5084436A (en) * 1989-01-31 1992-01-28 Asahi Glass Company Ltd. Oriented superconductor containing a dispersed non-superconducting phase
JP2688455B2 (ja) * 1990-12-20 1997-12-10 財団法人国際超電導産業技術研究センター 希土類系酸化物超電導体及びその製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1991019029A1 (fr) * 1990-06-07 1991-12-12 Nippon Steel Corporation Supraconducteur a oxyde et procede de production associe
EP0486698A1 (en) * 1990-06-07 1992-05-27 Nippon Steel Corporation Oxide superconductor and production thereof

Also Published As

Publication number Publication date
DE4243053A1 (enExample) 1993-06-24
JP2838742B2 (ja) 1998-12-16
GB2262519A (en) 1993-06-23
GB2262519B (en) 1995-05-17
US5571776A (en) 1996-11-05
JPH05170598A (ja) 1993-07-09
FR2685978B1 (fr) 1995-03-10
GB9226151D0 (en) 1993-02-10
FR2685978A1 (fr) 1993-07-09

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Legal Events

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OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
R071 Expiry of right
R071 Expiry of right