DE4243040A1 - - Google Patents
Info
- Publication number
- DE4243040A1 DE4243040A1 DE4243040A DE4243040A DE4243040A1 DE 4243040 A1 DE4243040 A1 DE 4243040A1 DE 4243040 A DE4243040 A DE 4243040A DE 4243040 A DE4243040 A DE 4243040A DE 4243040 A1 DE4243040 A1 DE 4243040A1
- Authority
- DE
- Germany
- Prior art keywords
- ceramic
- glass
- circuit board
- metal
- bonding layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 67
- 239000011521 glass Substances 0.000 claims abstract description 54
- 239000002241 glass-ceramic Substances 0.000 claims abstract description 53
- 229910052751 metal Inorganic materials 0.000 claims abstract description 48
- 239000002184 metal Substances 0.000 claims abstract description 48
- 239000000945 filler Substances 0.000 claims abstract description 32
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 31
- 238000000034 method Methods 0.000 claims description 15
- 238000004377 microelectronic Methods 0.000 claims description 15
- 229910052802 copper Inorganic materials 0.000 claims description 14
- 239000004020 conductor Substances 0.000 claims description 11
- 229910001220 stainless steel Inorganic materials 0.000 claims description 7
- 239000010935 stainless steel Substances 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 4
- 239000010436 fluorite Substances 0.000 claims description 4
- 239000006124 glass-ceramic system Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000006112 glass ceramic composition Substances 0.000 claims description 3
- 239000010453 quartz Substances 0.000 claims description 3
- 229910001374 Invar Inorganic materials 0.000 claims description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000008393 encapsulating agent Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 claims 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 239000000203 mixture Substances 0.000 abstract description 12
- 229910052681 coesite Inorganic materials 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 abstract description 3
- 239000002585 base Substances 0.000 description 23
- 239000010949 copper Substances 0.000 description 19
- 238000010304 firing Methods 0.000 description 12
- 239000000758 substrate Substances 0.000 description 12
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000002667 nucleating agent Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000725 suspension Substances 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910020218 Pb—Zn Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000000654 additive Substances 0.000 description 2
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 238000005272 metallurgy Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 238000004382 potting Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- 229910017309 Mo—Mn Inorganic materials 0.000 description 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000006121 base glass Substances 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 235000015895 biscuits Nutrition 0.000 description 1
- 239000005385 borate glass Substances 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000010344 co-firing Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
- 229910000174 eucryptite Inorganic materials 0.000 description 1
- 238000005562 fading Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052839 forsterite Inorganic materials 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000005246 galvanizing Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 229910003439 heavy metal oxide Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- YEXPOXQUZXUXJW-UHFFFAOYSA-N lead(II) oxide Inorganic materials [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 description 1
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000006017 silicate glass-ceramic Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical compound CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000000037 vitreous enamel Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/142—Metallic substrates having insulating layers
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0054—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing PbO, SnO2, B2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01014—Silicon [Si]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Dispersion Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Ceramic Products (AREA)
- Insulated Metal Substrates For Printed Circuits (AREA)
- Glass Compositions (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US07/809,372 US5277724A (en) | 1991-12-18 | 1991-12-18 | Method of minimizing lateral shrinkage in a co-fired, ceramic-on-metal circuit board |
| US07/809,371 US5256469A (en) | 1991-12-18 | 1991-12-18 | Multi-layered, co-fired, ceramic-on-metal circuit board for microelectronic packaging |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE4243040A1 true DE4243040A1 (enrdf_load_stackoverflow) | 1993-06-24 |
| DE4243040C2 DE4243040C2 (de) | 1999-06-17 |
Family
ID=27123219
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE4243040A Expired - Fee Related DE4243040C2 (de) | 1991-12-18 | 1992-12-18 | Mehrschichtige Metall-Keramik-Leiterplatte und Verfahren zu ihrer Herstellung |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP2922375B2 (enrdf_load_stackoverflow) |
| KR (1) | KR970008145B1 (enrdf_load_stackoverflow) |
| DE (1) | DE4243040C2 (enrdf_load_stackoverflow) |
| GB (1) | GB2263253B (enrdf_load_stackoverflow) |
| SG (1) | SG50478A1 (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1020909A3 (en) * | 1999-01-17 | 2003-07-09 | Delphi Technologies, Inc. | Thick-film hybrid circuit on a metal circuit board and method therefor |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100382416B1 (ko) * | 1999-09-28 | 2003-05-01 | 가부시끼가이샤 도시바 | 세라믹 회로기판 |
| KR100696861B1 (ko) * | 1999-12-10 | 2007-03-19 | 고등기술연구원연구조합 | 금속상 저온 동시 소성 세라믹 기판 제조 방법 |
| KR100696859B1 (ko) * | 1999-12-10 | 2007-03-19 | 고등기술연구원연구조합 | 금속상 저온 동시 소성 세라믹 기판 제조 방법 |
| DE10148751A1 (de) * | 2001-10-02 | 2003-04-17 | Siemens Ag | Verfahren zur Herstellung einer Elektronikeinheit sowie Elektronikeinheit |
| US20100089620A1 (en) * | 2006-11-30 | 2010-04-15 | Richard Matz | Electronic Component Module and Method for the Production Thereof |
| JP5585649B2 (ja) * | 2010-03-30 | 2014-09-10 | 株式会社村田製作所 | 金属ベース基板およびその製造方法 |
| JP6285271B2 (ja) * | 2014-04-24 | 2018-02-28 | 株式会社ノリタケカンパニーリミテド | 接合材およびその利用 |
| JP6577763B2 (ja) * | 2015-06-23 | 2019-09-18 | イビデン株式会社 | エンジンバルブ及びその製造方法 |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4185139A (en) * | 1977-12-30 | 1980-01-22 | International Standard Electric Corporation | Filler for a glass-ceramic material comprising CaF2 granules overcoated with a silicon dioxide film |
| US4256796A (en) * | 1979-11-05 | 1981-03-17 | Rca Corporation | Partially devitrified porcelain composition and articles prepared with same |
| DE2533687C2 (de) * | 1974-07-30 | 1982-11-04 | Owens-Illinois, Inc., 43666 Toledo, Ohio | Gemisch von Bleiborat-Lötglaspartikeln und einem hochschmelzenden Füllstoff niedrigerer Wärmeausdehnung und seine Verwendung |
| DE3324933C2 (de) * | 1982-07-12 | 1985-01-03 | Hitachi, Ltd., Tokio/Tokyo | Keramische Mehrschicht-Leiterplatte |
| US5047371A (en) * | 1988-09-02 | 1991-09-10 | Olin Corporation | Glass/ceramic sealing system |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ZA802231B (en) * | 1979-04-19 | 1981-09-30 | Chloride Silent Power Ltd | Glass for sealing beta-alumina in electro-chemical cells or other energy conversion devices, glasses for use in seals and cells or other energy conversion devices with such selas |
| US5041695A (en) * | 1989-06-01 | 1991-08-20 | Westinghouse Electric Corp. | Co-fired ceramic package for a power circuit |
-
1992
- 1992-12-15 KR KR1019920024285A patent/KR970008145B1/ko not_active Expired - Fee Related
- 1992-12-16 SG SG1996002358A patent/SG50478A1/en unknown
- 1992-12-16 GB GB9226220A patent/GB2263253B/en not_active Expired - Lifetime
- 1992-12-18 JP JP4356082A patent/JP2922375B2/ja not_active Expired - Fee Related
- 1992-12-18 DE DE4243040A patent/DE4243040C2/de not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2533687C2 (de) * | 1974-07-30 | 1982-11-04 | Owens-Illinois, Inc., 43666 Toledo, Ohio | Gemisch von Bleiborat-Lötglaspartikeln und einem hochschmelzenden Füllstoff niedrigerer Wärmeausdehnung und seine Verwendung |
| US4185139A (en) * | 1977-12-30 | 1980-01-22 | International Standard Electric Corporation | Filler for a glass-ceramic material comprising CaF2 granules overcoated with a silicon dioxide film |
| US4256796A (en) * | 1979-11-05 | 1981-03-17 | Rca Corporation | Partially devitrified porcelain composition and articles prepared with same |
| DE3324933C2 (de) * | 1982-07-12 | 1985-01-03 | Hitachi, Ltd., Tokio/Tokyo | Keramische Mehrschicht-Leiterplatte |
| US5047371A (en) * | 1988-09-02 | 1991-09-10 | Olin Corporation | Glass/ceramic sealing system |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1020909A3 (en) * | 1999-01-17 | 2003-07-09 | Delphi Technologies, Inc. | Thick-film hybrid circuit on a metal circuit board and method therefor |
Also Published As
| Publication number | Publication date |
|---|---|
| KR970008145B1 (ko) | 1997-05-21 |
| GB2263253A (en) | 1993-07-21 |
| KR930015993A (ko) | 1993-07-24 |
| GB2263253B (en) | 1996-02-07 |
| JP2922375B2 (ja) | 1999-07-19 |
| GB9226220D0 (en) | 1993-02-10 |
| JPH05270934A (ja) | 1993-10-19 |
| SG50478A1 (en) | 1998-07-20 |
| DE4243040C2 (de) | 1999-06-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69632722T2 (de) | Gasbondierungsanlage für ein Versteifungssubstrat einer keramischen Leiterplatte | |
| DE10157443B4 (de) | Glas-Keramikzusammensetzung für ein elektronisches Keramikbauteil, Verwendung der Glas-Keramikzusammensetzung für ein elektronisches Keramikbauteil und Vefahren zur Herstellung eines elektronischen Vielschicht-Keramikbauteils | |
| DE69628548T2 (de) | Elektrische durchführung für keramische leiterplattenträgersubstrate | |
| DE3317963C2 (de) | Keramikkondensator mit Schichtaufbau | |
| DE68910155T2 (de) | Mehrschichtige keramische Unterlagen und Verfahren zu ihrer Herstellung. | |
| DE3621667C2 (enrdf_load_stackoverflow) | ||
| DE60004924T2 (de) | Zusammensetzung für Keramiksubstrat und Keramikschaltungselement | |
| US4650923A (en) | Ceramic article having a high moisture proof | |
| KR100798263B1 (ko) | 마이크로파 어플리케이션에서의 ｌｔｃｃ 테이프를 위한후막 전도체 페이스트 조성물 | |
| DE69300907T2 (de) | Keramisches Mehrschichtsubstrat mit Gradienten-Kontaktlöchern. | |
| DE69103807T2 (de) | Verfahren zum Anlöten metallisierter Komponenten an keramische Substrate. | |
| DE19608484B4 (de) | Bei niedriger Temperatur gebranntes Keramik-Schaltungssubstrat | |
| US5043223A (en) | Multilayer ceramic substrate and method for making the same | |
| DE2126909A1 (de) | Dielektrische Zusammensetzung | |
| DE19961537B4 (de) | Verfahren zur Herstellung einer Glaskeramiktafel | |
| DE112007001868T5 (de) | Glaskeramikzusammensetzung, gesinterter Glaskeramikkörper und elektronische Komponente aus monolithischer Keramik | |
| DE69919806T2 (de) | Leitpaste und Keramikschaltungsplatte | |
| DE4243040C2 (de) | Mehrschichtige Metall-Keramik-Leiterplatte und Verfahren zu ihrer Herstellung | |
| DE10108666A1 (de) | Isolierende Dickschichtzusammensetzung, keramisches elektronisches Bauelement, bei dem diese verwendet wird, und elektronisches Gerät | |
| DE69627000T2 (de) | Keramische zusammensetzung für gemeinsam gebrannte mehrschichtbauteile und leiterplatte mit metallisierung auf keramischem substrat | |
| EP1178713B1 (en) | Multilayered board and method for fabricating the same | |
| DE19609118B4 (de) | Widerstandspaste, Glasüberzugsspaste und ein diese verwendendes keramisches Schaltungssubstrat | |
| EP1130003A1 (en) | Glass ceramics composition and electronic parts and multilayered lc multiple component using the same | |
| JPH04329691A (ja) | 導体ぺーストおよび配線基板 | |
| US7740725B2 (en) | Thick film conductor paste composition for LTCC tape in microwave applications |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OP8 | Request for examination as to paragraph 44 patent law | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8320 | Willingness to grant licences declared (paragraph 23) | ||
| 8339 | Ceased/non-payment of the annual fee |