WO2011122406A1 - 金属ベース基板およびその製造方法 - Google Patents

金属ベース基板およびその製造方法 Download PDF

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WO2011122406A1
WO2011122406A1 PCT/JP2011/056913 JP2011056913W WO2011122406A1 WO 2011122406 A1 WO2011122406 A1 WO 2011122406A1 JP 2011056913 W JP2011056913 W JP 2011056913W WO 2011122406 A1 WO2011122406 A1 WO 2011122406A1
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Prior art keywords
low
layer
sintered ceramic
metal plate
temperature
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PCT/JP2011/056913
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English (en)
French (fr)
Inventor
要一 守屋
毅 勝部
祐貴 武森
哲雄 金森
安隆 杉本
高田　隆裕
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株式会社村田製作所
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Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to JP2012508230A priority Critical patent/JP5585649B2/ja
Priority to CN201180015855.6A priority patent/CN102822112B/zh
Publication of WO2011122406A1 publication Critical patent/WO2011122406A1/ja
Priority to US13/630,049 priority patent/US8980028B2/en

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    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
    • C04B2237/708—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the interlayers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10T156/10—Methods of surface bonding and/or assembly therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495—Thickness [relative or absolute]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less

Definitions

  • the present invention relates to a metal base substrate that provides a heat dissipation function while mounting a semiconductor element and the like, and a method of manufacturing the same, and in particular, a metal that combines a ceramic layer and a metal plate that are formed using a low-temperature sintered ceramic material.
  • the present invention relates to a base substrate and a manufacturing method thereof.
  • the metal base substrate has a relatively high heat dissipation function, and is advantageously used for mounting electronic parts that require heat dissipation, such as semiconductor elements.
  • a ceramic material is used as a material constituting the substrate layer combined with the metal plate.
  • a low-temperature sintered ceramic material is a ceramic material that can be sintered at a temperature of 1050 ° C. or lower. Therefore, if the metal base substrate has a ceramic layer formed of a low-temperature sintered ceramic material formed on the metal plate, raw low-temperature sintering can be performed without using a metal plate made of a metal having a very high melting point. The ceramic layer and the metal plate can be obtained by batch firing.
  • Patent Document 1 Japanese Patent Application Laid-Open No. 5-270934
  • Patent Document 2 Japanese Patent Publication No. 11-514627
  • Patent Document 3 Japanese Patent Publication No. 11-511719
  • such a bonded glass layer is intended to function as a bonding material, and thus is a very weak layer from the viewpoint of bending strength.
  • an object of the present invention is to provide a metal base substrate that can solve the above-described problems and a manufacturing method thereof.
  • the present invention is first directed to a metal base substrate comprising a metal plate, a glass layer formed on the metal plate, and a low-temperature sintered ceramic layer formed on the glass layer.
  • the glass layer has a thickness of 1 to 5 ⁇ m.
  • the glass layer is made of Cu—Ba—Si based glass, and the low-temperature sintered ceramic layer is barium converted to BaO. 10 to 40 mol% and 40 to 80 mol% of silicon in terms of SiO 2 can be realized.
  • the present invention is also directed to a method for manufacturing a metal base substrate.
  • the method for producing a metal base substrate according to the present invention comprises a step of preparing a metal plate containing at least a Cu component on the surface, and 10-40 mol% of barium in terms of BaO and silicon in terms of SiO 2 on the surface of the metal plate.
  • a step of producing a raw laminate by laminating a low-temperature sintered ceramic green layer containing a low-temperature sintered ceramic material containing 40 to 80 mol% at a low temperature sintered ceramic green layer And a step of firing at a temperature for sintering.
  • the glass layer having a relatively low strength is thin, the flexural strength is increased, and thus the glass layer is hardly cracked.
  • the low-temperature sintered ceramic green layer is directly formed on the metal plate and fired without using a separately formed bonding glass layer.
  • a glass layer can be formed between the metal plate and the low-temperature sintered ceramic layer, and the metal plate and the low-temperature sintered ceramic layer are joined by this glass layer.
  • this glass layer has a thickness in the range of 1 to 5 ⁇ m.
  • the composition of the glass layer is substantially the same as the composition of the low-temperature sintered ceramic layer. Since it is the same, a crack becomes difficult to enter at an interface.
  • the electronic component device 11 shown in FIG. 1 includes a metal base substrate 12 and a semiconductor element 13 mounted thereon.
  • the metal base substrate 12 includes a metal plate 14, a glass layer 22 formed on the metal plate 14, a low-temperature sintered ceramic layer 15 formed on the glass layer 22, and further includes a constraining layer 16. ing.
  • the metal plate 14 is bonded to the low-temperature sintered ceramic layer 15 via the glass layer 22.
  • the low-temperature sintered ceramic layers 15 and the constraining layers 16 are alternately stacked, and the uppermost layer is provided by the constraining layers 16. Note that the uppermost layer may be provided by the low-temperature sintered ceramic layer 15.
  • the low-temperature sintered ceramic layer 15 is thicker than the constraining layer 16.
  • the low-temperature sintered ceramic layer 15 is made of a sintered body of a low-temperature sintered ceramic material.
  • the constraining layer 16 includes a hardly-sinterable ceramic material that does not sinter at the sintering temperature of the low-temperature sintered ceramic material. When a part of the material flows into the constraining layer 16, the hardly sinterable ceramic material is solidified and densified.
  • the glass layer 22 has a thickness of 1 to 5 ⁇ m.
  • a circuit pattern is formed on the laminate portion 17 constituted by the low-temperature sintered ceramic layer 15 and the constraining layer 16 in the metal base substrate 12.
  • some circuit patterns are not shown, but in connection with the semiconductor element 13, for example, some surface conductors 18, some interlayer connection conductors 19, and some in-plane wirings
  • a conductor 20 is formed. Further, a specific one of the surface conductors 18 and the semiconductor element 13 are electrically connected by a bonding wire 21.
  • heat generated in the semiconductor element 13 is conducted to the metal plate 14 through the stacked body portion 17 and is radiated from the metal plate 14.
  • the glass layer 22 consists only of the component of the metal plate 14 and the component of the low-temperature sintered ceramic layer 15. More specifically, when the metal plate 14 includes a Cu component as in the case where the metal plate 14 is a copper plate, the glass layer 22 is made of a Cu—Ba—Si-based glass, and the low-temperature sintered ceramic layer 15 is made of barium with BaO. 10 to 40 mole% and silicon in terms of containing 40 to 80 mol% in terms of SiO 2.
  • the metal plate 14 whole is It need not be composed of a uniform material.
  • the surface of the metal plate 14 includes a Cu component
  • the surface of the metal plate other than the copper plate includes a Cu component only on the surface, such as a surface of a metal plate pasted or copper plated. There may be.
  • the glass layer 22 does not contain a filler. This is because the bonding strength between the metal plate 14 and the low-temperature sintered ceramic layer 15 is increased. When the filler is included, the bending strength can be improved. However, since the glass layer 22 has the bending strength improved by reducing the thickness to 1 to 5 ⁇ m, it is necessary to include the filler for the purpose of improving the bending strength. Because it is low.
  • the metal base substrate 12 used in such an electronic component device 11 is preferably manufactured as follows.
  • the metal plate 14 is prepared, and the low-sintered ceramic slurry containing the low-temperature sintered ceramic material and the hard-sintered material containing the hardly-sinterable ceramic material that does not sinter at the sintering temperature of the low-temperature sintered ceramic material Each of the ceramic ceramic slurry is prepared.
  • the metal plate 14 at least a surface containing a Cu component is prepared.
  • the low-temperature sintered ceramic material a material containing 10 to 40 mol% of barium in terms of BaO and 40 to 80 mol% of silicon in terms of SiO 2 is used.
  • a low-temperature sintered ceramic green layer made of low-temperature sintered ceramic slurry and a hardly-sinterable ceramic green layer made of hardly-sinterable ceramic slurry are laminated on the metal plate 14, whereby the metal base substrate 12.
  • a raw laminate corresponding to the state before firing is obtained.
  • the low-temperature sintered ceramic green layer is to be the low-temperature sintered ceramic layer 15, and the hardly sinterable ceramic green layer is to be the constraining layer 16.
  • the surface conductor 18, the interlayer connection conductor 19, and the in-plane wiring conductor 20 described above are provided in a specific ceramic green layer as necessary.
  • low-temperature sintering is performed by forming a hardly-sinterable ceramic slurry into a sheet on a ceramic green sheet obtained by forming the low-temperature-sintered ceramic slurry into a sheet.
  • a ceramic green sheet obtained by forming the low-temperature-sintered ceramic slurry into a sheet.
  • a low-temperature sintered ceramic green sheet obtained by forming a low-temperature sintered ceramic slurry, and a hardly-sinterable ceramic green sheet obtained by forming a hardly-sinterable ceramic slurry may be alternately stacked.
  • the formation of the hardly sinterable ceramic green layer and the formation of the low temperature sintered ceramic green layer may be repeated on the low temperature sintered ceramic green sheet.
  • a step of collectively firing the raw laminate including the metal plate 14 and the low-temperature sintered ceramic green layer and the hardly sinterable ceramic green layer is performed.
  • the low-temperature sintered ceramic material contained in the low-temperature sintered ceramic green layer is sintered to form a low-temperature sintered ceramic layer 15.
  • a part of this low-temperature sintered ceramic material flows into the hardly sinterable ceramic green layer, solidifies the hardly sinterable ceramic material contained in the hardly sinterable ceramic green layer, and The green layer is densified to form the constraining layer 16.
  • the hardly sinterable ceramic green layer does not substantially shrink in the planar direction in the firing step, it acts to suppress shrinkage in the planar direction of the low-temperature sintered ceramic green layer. Therefore, the shrinkage
  • a glass layer 22 having a thickness of 1 to 5 ⁇ m is formed between the metal plate 14 and the low-temperature sintered ceramic layer 15, and the glass layer 22 and the low-temperature sintered ceramic layer 15 form a low temperature. A good bonding state is achieved with the sintered ceramic layer 15.
  • the low-temperature sintered ceramic layer 15 contains 10 to 40 mol% of barium in terms of BaO and 40 to 80 mol% of silicon in terms of SiO 2 .
  • the metal plate 14 contains a Cu component at least on the surface. Since the glass layer 22 is derived from a reaction layer generated between the metal plate 14 and the low-temperature sintered ceramic layer 15, at least the surface components of the metal plate 14 and the components of the low-temperature sintered ceramic layer 15 are combined. Therefore, in this embodiment, it is made of a Cu—Ba—Si based glass.
  • the glass layer 22 may contain a component of the constraining layer 16.
  • the low-temperature sintered ceramic layer 15 formed on the metal plate 14 includes a part of the laminated body portion 17 in which the plurality of low-temperature sintered ceramic layers 15 and the constraining layers 16 are alternately stacked.
  • the present invention can also be applied to a metal base substrate having a structure in which only a low-temperature sintered ceramic layer is formed on a metal plate.
  • Example 1 Preparation of composite green sheet BaCO 3 , Al 2 O 3 , and SiO 2 (quartz) powders are prepared, and mixed powders obtained by mixing these are calcined at a temperature of 840 ° C. for 120 minutes to prepare raw material powders The raw material powder and the MnCO 3 powder are mixed in an organic solvent to which a dispersant is added, and then a resin and a plasticizer are added and further mixed to obtain a low-temperature sintered ceramic slurry containing a low-temperature sintered ceramic material. Got.
  • Table 1 shows the composition ratio of inorganic solids contained in the low-temperature sintered ceramic slurry.
  • BaCO 3 is shown in terms of BaO
  • MnCO 3 is shown in terms of MnO.
  • a ceramic green sheet to be a low-temperature sintered ceramic green layer having a thickness of 40 ⁇ m was prepared by a doctor blade method.
  • SiO 2 55.0 mol%, BaO: 20.0 mol%, MgO: 0.5 mol%, CaO: 5.5 mol%, Al 2 O 3: 4.0 mol%, B 2 O 3
  • an organic solvent to which a dispersant is added at a ratio of 40 parts by weight to 60 parts by weight of glass powder and Al 2 O 3 powder consisting of 10.0 mol% and Li 2 O: 5.0 mol%
  • a resin and a plasticizer were added and further mixed to obtain a hardly sinterable ceramic slurry containing a hardly sinterable ceramic material.
  • the non-sinterable ceramic slurry was defoamed, it was formed into a sheet with a thickness of 4.0 ⁇ m by the doctor blade method on the ceramic green sheet described above. In this way, a composite green sheet was obtained in which the low temperature sintered ceramic green layer provided by the ceramic green sheet and the hardly sintered ceramic green layer formed from the hardly sintered ceramic slurry were superimposed.
  • the ceramic molded body obtained by molding the hardly sinterable ceramic slurry alone is not sintered even when fired under the firing conditions described later.
  • the unfired first evaluation sample was degreased in a nitrogen neutral atmosphere, and then fired in a nitrogen / hydrogen reducing atmosphere at the top temperature shown in the column “Baking Temperature” in Table 2, A sample for evaluation 1 was obtained.
  • a capacitor is configured as the seventh and eighth composite green sheets from the copper plate side. Except for using a composite green sheet in which conductor patterns having a plane size of 4 mm ⁇ are formed at the same position using copper paste, the same operation as in the case of the first evaluation sample was performed, and the second evaluation sample was used. A sample was obtained.
  • planar porosity The planar porosity was obtained in order to evaluate the sinterability.
  • the first evaluation sample was subjected to cross-sectional polishing, and a scanning electron microscope (SEM) was used at a magnification of 1000 times. The ceramic portion was observed, and the planar porosity was measured by image analysis. Ten visual field images were analyzed for each sample, and the average values are shown in Table 2.
  • SiO 2 is less than 40 mol%, and “insulation reliability” is low.
  • SiO 2 exceeds 80 mol%, “planar porosity” is low, and “insulation reliability” is low.
  • Al 2 O 3 is an optional component that is added to increase chemical durability and bending strength, but may not be included. Moreover, when the addition amount exceeds 25 mol%, it has been confirmed that defective sintering is caused. Further, MnO functions as a sintering aid, which may be replaced with glass, but it has been confirmed that when the added amount exceeds 14 mol%, strength is reduced.
  • Table 3 shows the composition ratio of inorganic solids contained in this low-temperature sintered ceramic slurry.
  • BaCO 3 is shown in terms of BaO
  • H 3 BO 3 is shown in terms of B 2 O 3 .
  • a ceramic green sheet to be a low-temperature sintered ceramic green layer having a thickness of 40 ⁇ m was prepared by a doctor blade method.
  • SiO 2 55.0 mol%, BaO: 20.0 mol%, MgO: 0.5 mol%, CaO: 5.5 mol%, Al 2 O 3: 4.0 mol%, B 2 O 3
  • an organic solvent to which a dispersant is added in a ratio of 35 parts by weight to 65 parts by weight of glass powder and Al 2 O 3 powder consisting of 10.0 mol% and Li 2 O: 5.0 mol%
  • a resin and a plasticizer were added and further mixed to obtain a hardly sinterable ceramic slurry containing a hardly sinterable ceramic material.
  • the non-sinterable ceramic slurry was defoamed, it was formed into a sheet shape with a thickness of 3.0 ⁇ m by the doctor blade method on the ceramic green sheet described above. In this way, a composite green sheet was obtained in which the low temperature sintered ceramic green layer provided by the ceramic green sheet and the hardly sintered ceramic green layer formed from the hardly sintered ceramic slurry were superimposed.
  • the ceramic molded body obtained by molding the hardly sinterable ceramic slurry alone is not sintered even when fired under the firing conditions described later.
  • SiO 2 is less than 40 mol%, and the “insulation reliability” is low.
  • SiO 2 exceeds 80 mol%, “planar porosity” is low, and “insulation reliability” is low.

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Abstract

　銅からなる金属板上に低温焼結セラミック層を形成した、金属ベース基板において、金属板と低温焼結セラミック層との接合信頼性を高める。　銅からなる金属板（１４）の表面上に、バリウムをＢａＯ換算で１０～４０モル％およびケイ素をＳｉＯ２換算で４０～８０モル％含む低温焼結セラミック材料を含む、低温焼結セラミックグリーン層を積層することによって、生の積層体を作製し、この生の積層体を、低温焼結セラミックグリーン層が焼結する温度で焼成する。このようにして得られた金属ベース基板（１２）における金属板（１４）と低温焼結セラミック層（１５）との間には、Ｃｕ－Ｂａ－Ｓｉ系のガラスからなる厚み１～５μｍのガラス層（２２）が形成される。このガラス層（２２）は良好な接合信頼性を示す。

Description

金属ベース基板およびその製造方法
　この発明は、半導体素子などを実装しながら放熱機能をも与える金属ベース基板およびその製造方法に関するもので、特に、低温焼結セラミック材料を用いて構成されたセラミック層と金属板とを組み合わせた金属ベース基板およびその製造方法に関するものである。
　金属ベース基板は、比較的高い放熱機能を有しており、たとえば半導体素子のような放熱を必要とする電子部品を実装するために有利に用いられている。このような金属ベース基板において、金属板と組み合わせる基板層を構成する材料として、セラミック材料が用いられている。
　たとえば低温焼結セラミック材料は、１０５０℃以下の温度で焼結可能なセラミック材料である。したがって、低温焼結セラミック材料を用いて構成されたセラミック層を金属板上に形成した金属ベース基板であれば、それほど高い融点を有する金属からなる金属板を用いなくても、生の低温焼結セラミック層と金属板とを一括焼成して得ることができる。
　しかし、上述のような金属ベース基板の場合、焼成時に低温焼結セラミック層と金属板とが剥離しないようにすることが重要な課題となる。そのため、低温焼結セラミック層と金属板との間に、接合ガラス層を形成することが行なわれている。たとえば、特開平５－２７０９３４号公報（特許文献１）、特表平１１－５１４６２７号公報（特許文献２）、および特表平１１－５１１７１９号公報（特許文献３）には、金属板上に接合ガラス層を形成し、その上に低温焼結セラミック層を形成して一括焼成して得られる、金属ベース基板に関する発明が開示されている。
　上記の従来技術の構成では、金属板と低温焼結セラミック層との間に接合ガラス層を予め形成しておく必要がある。このように接合ガラス層を予め形成する場合、金属板と低温焼結セラミック層とを結合するためには、接合ガラス層は厚く形成されなければならず、たとえば、特許文献１では約２５μｍ、特許文献２では約３５μｍの厚みの接合ガラス層が形成されると記載されている。なお、特許文献３には具体的な厚みの開示がない。
　一方、このような接合ガラス層は、接合材として機能することを目的としたものであるため、撓み強度の観点からは非常に弱い層となる。
　その上、前述のように、接合ガラス層が厚いとなると、撓みによって、益々クラックが生じやすくなる。なぜなら、接合ガラス層が撓んだとき、接合ガラス層が厚くなるほど、接合ガラス層の一方主面側で生じる応力と他方主面側で生じる応力との差がより大きくなるためである。
　また、従来技術では、接合ガラス層を金属板に形成するために焼き付ける工程と、その上に低温焼結セラミックグリーン層を形成してから焼成する工程といった、２度の焼成工程が必要になり、工程が煩雑であり、また、加熱のためのエネルギーも多く必要とする。
特開平５－２７０９３４号公報 特表平１１－５１４６２７号公報 特表平１１－５１１７１９号公報
　そこで、この発明の目的は、上述したような問題を解決し得る金属ベース基板およびその製造方法を提供しようとすることである。
　この発明は、金属板と、金属板の上に形成されたガラス層と、ガラス層の上に形成された低温焼結セラミック層とを備える、金属ベース基板にまず向けられるものであって、上述した技術的課題を解決するため、ガラス層の厚みが１～５μｍであることを特徴としている。
　上記のような金属ベース基板は、たとえば、金属板が、少なくとも表面にＣｕ成分を含むとき、ガラス層が、Ｃｕ－Ｂａ－Ｓｉ系のガラスからなり、低温焼結セラミック層が、バリウムをＢａＯ換算で１０～４０モル％およびケイ素をＳｉＯ２換算で４０～８０モル％含む、といった具体的構成によって実現され得る。
　この発明は、また、金属ベース基板の製造方法にも向けられる。この発明に係る金属ベース基板の製造方法は、少なくとも表面にＣｕ成分を含む金属板を準備する工程と、金属板の表面上に、バリウムをＢａＯ換算で１０～４０モル％およびケイ素をＳｉＯ２換算で４０～８０モル％含む低温焼結セラミック材料を含む、低温焼結セラミックグリーン層を積層することによって、生の積層体を作製する工程と、この生の積層体を、低温焼結セラミックグリーン層が焼結する温度で焼成する工程とを備えることを特徴としている。
　この発明に係る金属ベース基板によれば、強度の比較的低いガラス層が薄いため、撓み強度が高くなり、よって、ガラス層にクラックが生じにくくなる。
　また、この発明に係る金属ベース基板の製造方法によれば、予め別に形成される接合ガラス層を介することなく、金属板の上に、直接、低温焼結セラミックグリーン層を形成して焼成することにより、金属板と低温焼結セラミック層との間にガラス層が形成されることができ、このガラス層によって、金属板と低温焼結セラミック層とが接合される。このガラス層は、前述したように、１～５μｍの範囲の厚みとなる。
　この発明に係る金属ベース基板において、ガラス層が、金属板の少なくとも表面の成分と低温焼結セラミック層の成分との少なくとも一部からなると、ガラス層の組成が低温焼結セラミック層の組成とほぼ同じであるため、界面でクラックがより入りにくくなる。
この発明の一実施形態による金属ベース基板を備える電子部品装置を示す断面図である。
　図１を参照して、まず、この発明の一実施形態による金属ベース基板を備える電子部品装置について説明する。
　図１に示した電子部品装置１１は、金属ベース基板１２と、その上に実装される半導体素子１３とを備えている。
　金属ベース基板１２は、金属板１４と、金属板１４の上に形成されたガラス層２２と、ガラス層２２の上に形成された低温焼結セラミック層１５とを備え、さらに拘束層１６を備えている。ここで、金属板１４は、ガラス層２２を介して、低温焼結セラミック層１５に接合されている。また、低温焼結セラミック層１５と拘束層１６とは交互に積層され、最上層は拘束層１６によって与えられている。なお、最上層は低温焼結セラミック層１５によって与えられてもよい。
　低温焼結セラミック層１５は、拘束層１６より厚い。後述する製造方法の説明から明らかになるように、低温焼結セラミック層１５は低温焼結セラミック材料の焼結体からなる。他方、拘束層１６は、上記低温焼結セラミック材料の焼結温度では焼結しない難焼結性セラミック材料を含むが、焼成時において、低温焼結セラミック層１５に含まれていた低温焼結セラミック材料の一部が拘束層１６へと流動することによって、難焼結性セラミック材料が固化され、緻密化されている。
　ガラス層２２は、１～５μｍの厚みを有している。
　金属ベース基板１２における低温焼結セラミック層１５および拘束層１６によって構成される積層体部分１７には、回路パターンが形成される。図１では、いくつかの回路パターンの図示を省略しているが、半導体素子１３に関連して、たとえば、いくつかの表面導体１８、いくつかの層間接続導体１９、およびいくつかの面内配線導体２０が形成されている。また、表面導体１８の特定のものと半導体素子１３とは、ボンディングワイヤ２１によって電気的に接続されている。
　使用状態において、半導体素子１３において発生した熱は、積層体部分１７を介して金属板１４に伝導され、金属板１４から放熱される。
　好ましくは、ガラス層２２は、金属板１４の成分と低温焼結セラミック層１５の成分とのみからなる。より具体的には、金属板１４が銅板である場合のようにＣｕ成分を含む場合、ガラス層２２は、Ｃｕ－Ｂａ－Ｓｉ系のガラスからなり、低温焼結セラミック層１５は、バリウムをＢａＯ換算で１０～４０モル％およびケイ素をＳｉＯ２換算で４０～８０モル％含む。
　なお、金属板１４に含まれる成分については、後述する製造方法の説明からわかるように、金属板１４の表面の成分がガラス層２２の成分に影響を及ぼすものであるので、金属板１４全体が均一の材料から構成される必要はない。たとえば、金属板１４の表面がＣｕ成分を含むようにしたい場合、銅板以外の金属板の表面に銅板を張り合わせたものや、銅めっきを施したもののように、表面のみにおいてＣｕ成分を含むものであってもよい。
　また、ガラス層２２は、フィラーを含まない方が好ましい。金属板１４と低温焼結セラミック層１５との接合強度が高くなるからである。フィラーを含むと撓み強度を向上させることができるが、ガラス層２２は厚みを１～５μｍと薄くすることによって撓み強度を向上させているため、撓み強度を向上させる目的でフィラーを含ませる必要性は低いからである。
　このような電子部品装置１１において用いられる、金属ベース基板１２は、好ましくは、次のようにして製造される。
　まず、金属板１４が用意されるとともに、低温焼結セラミック材料を含む低温焼結セラミックスラリーと、この低温焼結セラミック材料の焼結温度では焼結しない難焼結性セラミック材料を含む難焼結性セラミックスラリーとがそれぞれ用意される。ここで、金属板１４としては、少なくとも表面にＣｕ成分を含むものが用意される。また、低温焼結セラミック材料としては、バリウムをＢａＯ換算で１０～４０モル％およびケイ素をＳｉＯ２換算で４０～８０モル％含むものが用いられる。
　次に、金属板１４の上に、低温焼結セラミックスラリーからなる低温焼結セラミックグリーン層および難焼結性セラミックスラリーからなる難焼結性セラミックグリーン層が積層され、それによって、金属ベース基板１２の焼成前の状態に相当する生の積層体が得られる。ここで、低温焼結セラミックグリーン層は低温焼結セラミック層１５となるべきものであり、難焼結性セラミックグリーン層は拘束層１６となるべきものである。また、前述した表面導体１８、層間接続導体１９および面内配線導体２０が、必要に応じて、特定のセラミックグリーン層に設けられる。
　上述の工程を実施するにあたり、好ましくは、低温焼結セラミックスラリーをシート状に成形して得られたセラミックグリーンシート上で、難焼結性セラミックスラリーをシート状に成形することによって、低温焼結セラミックグリーン層と難焼結性セラミックグリーン層とが重ね合わされた複合グリーンシートを得た上で、この複合グリーンシートを金属板１４上に必要枚数積層し、圧着することが行なわれる。
　なお、上記方法に代えて、低温焼結セラミックスラリーを成形して得られた低温焼結セラミックグリーンシートと、難焼結性セラミックスラリーを形成して得られた難焼結性セラミックグリーンシートとを、金属板１４上で、交互に積層してもよい。あるいは、低温焼結セラミックグリーンシート上で、難焼結性セラミックグリーン層の成形と低温焼結セラミックグリーン層の成形とを繰り返してもよい。
　次に、金属板１４ならびに低温焼結セラミックグリーン層および難焼結性セラミックグリーン層を備える生の積層体を一括焼成する工程が実施される。この焼成工程において、低温焼結セラミックグリーン層に含まれている低温焼結セラミック材料は焼結し、低温焼結セラミック層１５となる。また、この低温焼結セラミック材料の一部は、難焼結性セラミックグリーン層へと流動し、難焼結性セラミックグリーン層に含まれる難焼結性セラミック材料を固化し、難焼結性セラミックグリーン層を緻密化させ、拘束層１６となる。
　上記難焼結性セラミックグリーン層は、焼成工程において、平面方向へは実質的に収縮しないため、低温焼結セラミックグリーン層の平面方向での収縮を抑制するように作用する。したがって、金属板１４の上の低温焼結セラミックグリーン層および難焼結性セラミックグリーン層からなる積層体部分全体の平面方向での収縮が有利に抑制される。
　このようにして得られた金属ベース基板１２において、金属板１４と低温焼結セラミック層１５との間に厚み１～５μｍのガラス層２２が形成され、このガラス層２２によって、金属板１４と低温焼結セラミック層１５との間で良好な接合状態が達成される。
　前述したように、低温焼結セラミック層１５は、バリウムをＢａＯ換算で１０～４０モル％およびケイ素をＳｉＯ２換算で４０～８０モル％含んでいる。他方、金属板１４は、少なくとも表面にＣｕ成分を含んでいる。ガラス層２２は、金属板１４と低温焼結セラミック層１５との間に生じた反応層に由来するものであるので、金属板１４の少なくとも表面の成分と低温焼結セラミック層１５の成分との少なくとも一部からなり、したがって、この実施形態では、Ｃｕ－Ｂａ－Ｓｉ系のガラスからなる。なお、ガラス層２２には、拘束層１６の成分が含まれていてもよい。
　以上説明した実施形態では、金属板１４の上に形成される低温焼結セラミック層１５が、複数の低温焼結セラミック層１５と拘束層１６とを交互に積層した積層体部分１７の一部を構成するものであったが、金属板の上に低温焼結セラミック層のみが形成された構造を有する金属ベース基板に対しても、この発明を適用することができる。
　次に、この発明に基づいて実施した実験例について説明する。
　［実験例１］
　１．複合グリーンシートの作製
　ＢａＣＯ３、Ａｌ２Ｏ３、およびＳｉＯ２（クオーツ）の各粉末を用意し、これらを混合した混合粉末を８４０℃の温度で１２０分間仮焼することによって、原料粉末を作製し、この原料粉末およびＭｎＣＯ３粉末を、分散剤が添加された有機溶剤中で混合し、後に樹脂および可塑剤を添加してさらに混合して、低温焼結セラミック材料を含む低温焼結セラミックスラリーを得た。
　この低温焼結セラミックスラリーに含まれる無機固形分の組成比率が表１に示されている。表１において、ＢａＣＯ３はＢａＯ換算で、ＭｎＣＯ３はＭｎＯ換算で示されている。
Figure JPOXMLDOC01-appb-T000001
　次に、低温焼結セラミックスラリーを脱泡した後、ドクターブレード法により、厚み４０μｍの低温焼結セラミックグリーン層となるべきセラミックグリーンシートを作製した。
　他方、ＳｉＯ２：５５．０モル％、ＢａＯ：２０．０モル％、ＭｇＯ：０．５モル％、ＣａＯ：５．５モル％、Ａｌ２Ｏ３：４．０モル％、Ｂ２Ｏ３：１０．０モル％、およびＬｉ２Ｏ：５．０モル％からなるガラス粉末とＡｌ２Ｏ３粉末とを、４０重量部：６０重量部の比率で、分散剤が添加された有機溶剤中で混合し、後に樹脂および可塑剤を添加してさらに混合して、難焼結性セラミック材料を含む難焼結性セラミックスラリーを得た。
　次に、難焼結性セラミックスラリーを脱泡した後、前述したセラミックグリーンシート上で、ドクターブレード法により、厚み４．０μｍをもってシート状に成形した。このようにして、上記セラミックグリーンシートによって与えられた低温焼結セラミックグリーン層と、難焼結性セラミックスラリーから成形された難焼結性セラミックグリーン層とが重ね合わされた複合グリーンシートを得た。
　なお、上記難焼結性セラミックスラリーを単独で成形して得られたセラミック成形体は、後述する焼成条件で焼成しても、焼結しないことが確認されている。
　２．評価用試料の作製
　（１）第１の評価用試料
　平面寸法３０ｍｍ□、厚み０．８ｍｍの純銅からなる銅板の両面に、上記複合グリーンシートを１０枚ずつ積層し、温度８０℃、圧力８０ｋｇｆ／ｃｍ２の条件で３００秒間プレスし、未焼成の第１の評価用試料を作製した。ここで、銅板には、複合グリーンシートの低温焼結セラミックグリーン層側が接し、この評価用試料の両主面には、難焼結性セラミックグリーン層が露出するように積層した。
　次に、上記未焼成の第１の評価用試料を、窒素中性雰囲気で脱脂した後、窒素／水素還元性雰囲気において、表２の「焼成温度」の欄に示すトップ温度で焼成し、第１の評価用試料を得た。
　（２）第２の評価用試料
　上記第１の評価用試料の作製途中の複合グリーンシートの積層段階において、銅板側から７層目および８層目の複合グリーンシートとして、コンデンサを構成するように銅ペーストを用いて平面寸法４ｍｍ□の導体パターンを互いに同じ位置に形成した複合グリーンシートを用いたことを除いて、第１の評価用試料の場合と同様の操作を経て、第２の評価用試料を得た。
　３．評価
　表２に示すように、「平面気孔率」、「界面接合性」および「絶縁信頼性」を評価した。
　（１）平面気孔率
　平面気孔率は、焼結性を評価するために求めたもので、第１の評価用試料を断面研磨し、走査型電子顕微鏡（ＳＥＭ）を用いて、倍率１０００倍でセラミック部分を観察し、画像解析により平面気孔率を測定した。各試料につき１０視野画像解析し、その平均値を表２に示した。
　（２）界面接合性
　第１の評価用試料を断面研磨し、ＳＥＭを用いて、倍率５０００倍で銅板とセラミック部分との界面部でのクラック発生状況を観察した。各試料で３０視野観察し、クラックの全く発生していない場合は界面接合性が良好であると判定し、表２において「○」で示し、他方、１箇所でもクラックが発生している場合は界面接合性が不良であると判定し、表２において「×」で示した。
　（３）絶縁信頼性
　第２の評価用試料を用い、温度：１２１℃、湿度：１００％、導体パターン間への印加電圧：１００ＤＣＶ、および試験時間：３００時間の条件で試験した。試験後の抵抗値を測定電圧：１００ＤＣＶで測定した。この測定結果が表２に示されている。
Figure JPOXMLDOC01-appb-T000002
　表１に示す組成に関して、ＢａＯが１０～４０モル％およびＳｉＯ２が４０～８０モル％であるという条件を満足する試料２～６、９～１２および１４において、表２に示すように、「気孔率」、「界面接合性」および「絶縁信頼性」のすべてについて良好な結果が得られている。これらの試料について、その断面を波長分散型Ｘ線分析法（ＷＤＸ）により分析したところ、銅板と低温焼結セラミック層との接合界面において、厚み１～５μｍのガラス層が生成されていることが確認された。また、試料２～６および９～１２のガラス層において、Ｃｕ、Ｂａ、ＳｉおよびＡｌの各元素が存在していることが確認された。試料１４のガラス層においては、Ｃｕ、Ｂａ、Ｓｉの各元素が存在していることが確認されたが、Ａｌは存在していなかった。
　これらに対して、試料１では、ＢａＯが１０モル％未満であり、「界面接合性」が「×」である。他方、試料７では、ＢａＯが４０モル％を超え、「絶縁信頼性」が低い。
　また、試料８では、ＳｉＯ２が４０モル％未満であり、「絶縁信頼性」が低い。他方、試料１３では、ＳｉＯ２が８０モル％を超え、「平面気孔率」が低く、また、「絶縁信頼性」が低い。
　なお、表１に示した組成のうち、Ａｌ２Ｏ３は、化学的耐久性や抗折強度を上げるために添加されるが、含まなくてもよい任意成分である。また、その添加量が２５モル％を超えると、焼結不良を招くことが確認されている。また、ＭｎＯは、焼結助剤として機能するものであり、これはガラスに置き換えられてもよいが、その添加量が１４モル％を超えると強度低下を招くことが確認されている。
　［実験例２］
　１．複合グリーンシートの作製
　ＢａＣＯ３、Ａｌ２Ｏ３、ＳｉＯ２（クオーツ）、およびＨ３ＢＯ３の各粉末を用意し、これらを混合した混合粉末を８４０℃の温度で１２０分間仮焼することによって、原料粉末を作製し、この原料粉末を、分散剤が添加された有機溶剤中で混合し、後に樹脂および可塑剤を添加してさらに混合して、低温焼結セラミック材料を含む低温焼結セラミックスラリーを得た。
　この低温焼結セラミックスラリーに含まれる無機固形分の組成比率が表３に示されている。表１において、ＢａＣＯ３はＢａＯ換算で、Ｈ３ＢＯ３はＢ２Ｏ３換算で示されている。
Figure JPOXMLDOC01-appb-T000003
　次に、低温焼結セラミックスラリーを脱泡した後、ドクターブレード法により、厚み４０μｍの低温焼結セラミックグリーン層となるべきセラミックグリーンシートを作製した。
　他方、ＳｉＯ２：５５．０モル％、ＢａＯ：２０．０モル％、ＭｇＯ：０．５モル％、ＣａＯ：５．５モル％、Ａｌ２Ｏ３：４．０モル％、Ｂ２Ｏ３：１０．０モル％、およびＬｉ２Ｏ：５．０モル％からなるガラス粉末とＡｌ２Ｏ３粉末とを、３５重量部：６５重量部の比率で、分散剤が添加された有機溶剤中で混合し、後に樹脂および可塑剤を添加してさらに混合して、難焼結性セラミック材料を含む難焼結性セラミックスラリーを得た。
　次に、難焼結性セラミックスラリーを脱泡した後、前述したセラミックグリーンシート上で、ドクターブレード法により、厚み３．０μｍをもってシート状に成形した。このようにして、上記セラミックグリーンシートによって与えられた低温焼結セラミックグリーン層と、難焼結性セラミックスラリーから成形された難焼結性セラミックグリーン層とが重ね合わされた複合グリーンシートを得た。
　なお、上記難焼結性セラミックスラリーを単独で成形して得られたセラミック成形体は、後述する焼成条件で焼成しても、焼結しないことが確認されている。
　２．評価用試料の作製
　実験例１の場合と同様の操作を経て、第１の評価用試料および第２の評価用試料を得た。
　３．評価
　実験例１の場合と同様の方法で、表４に示すように、「平面気孔率」、「界面接合性」および「絶縁信頼性」を評価した。
Figure JPOXMLDOC01-appb-T000004
　実験例１の場合と同様の評価結果が得られた。
　すなわち、表３に示す組成に関して、ＢａＯが１０～４０モル％およびＳｉＯ２が４０～８０モル％であるという条件を満足する試料２２～２５および２８～３１において、表４に示すように、「気孔率」、「界面接合性」および「絶縁信頼性」のすべてについて良好な結果が得られている。これらの試料について、その断面を波長分散型Ｘ線分析法（ＷＤＸ）により分析したところ、銅板と低温焼結セラミック層との接合界面において、厚み１～５μｍのガラス層が生成され、かつこのガラス層において、Ｃｕ、Ｂａ、ＳｉおよびＡｌの各元素が存在していることが確認された。
　これらに対して、試料２１では、ＢａＯが１０モル％未満であり、「界面接合性」が「×」である。他方、試料２６では、ＢａＯが４０モル％を超え、「絶縁信頼性」が低い。
　また、試料２７では、ＳｉＯ２が４０モル％未満であり、「絶縁信頼性」が低い。他方、試料３２では、ＳｉＯ２が８０モル％を超え、「平面気孔率」が低く、また、「絶縁信頼性」が低い。
１１　電子部品装置
１２　金属ベース基板
１４　金属板
１５　低温焼結セラミック層
１６　拘束層
２２　ガラス層

Claims (4)

  1. 　金属板と、
    　前記金属板の上に形成された厚み１～５μｍのガラス層と、
    　前記ガラス層の上に形成された低温焼結セラミック層と
    を備える、金属ベース基板。
  2. 　前記ガラス層は、前記金属板の少なくとも表面の成分と前記低温焼結セラミック層の成分との少なくとも一部からなる、請求項１に記載の金属ベース基板。
  3. 　前記金属板は、少なくとも表面にＣｕ成分を含み、
    　前記ガラス層は、Ｃｕ－Ｂａ－Ｓｉ系のガラスからなり、
    　前記低温焼結セラミック層は、バリウムをＢａＯ換算で１０～４０モル％およびケイ素をＳｉＯ２換算で４０～８０モル％含む、請求項１または２に記載の金属ベース基板。
  4. 　少なくとも表面にＣｕ成分を含む金属板を準備する工程と、
    　前記金属板の表面上に、バリウムをＢａＯ換算で１０～４０モル％およびケイ素をＳｉＯ２換算で４０～８０モル％含む低温焼結セラミック材料を含む、低温焼結セラミックグリーン層を積層することによって、生の積層体を作製する工程と、
    　前記生の積層体を、前記低温焼結セラミックグリーン層が焼結する温度で焼成する工程と
    を備える、金属ベース基板の製造方法。
PCT/JP2011/056913 2010-03-30 2011-03-23 金属ベース基板およびその製造方法 WO2011122406A1 (ja)

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