CN102822112A - 金属基基板及其制造方法 - Google Patents

金属基基板及其制造方法 Download PDF

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Publication number
CN102822112A
CN102822112A CN2011800158556A CN201180015855A CN102822112A CN 102822112 A CN102822112 A CN 102822112A CN 2011800158556 A CN2011800158556 A CN 2011800158556A CN 201180015855 A CN201180015855 A CN 201180015855A CN 102822112 A CN102822112 A CN 102822112A
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low
layer
sintered ceramics
temperature sintered
metal
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CN102822112B (zh
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守屋要一
胜部毅
武森祐贵
金森哲雄
杉本安隆
高田隆裕
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Abstract

在由铜形成的金属板上形成有低温烧结陶瓷层的金属基基板中，提高金属板和低温烧结陶瓷层的接合可靠性。通过在由铜形成的金属板（14）的表面上层叠包含含有换算成BaO为10～40摩尔％的钡和换算成SiO2为40～80摩尔％的硅的低温烧结材料的低温烧结陶瓷生坯层，从而制作生的层叠体，在低温烧结陶瓷生坯层烧结的温度下对该生的层叠体进行烧成。在这样得到的金属基基板（12）中的金属板（14）和低温烧结陶瓷层（15）之间形成由Cu-Ba-Si系玻璃形成的厚1～5μm的玻璃层（22）。该玻璃层（22）显示良好的接合可靠性。

Description

金属基基板及其制造方法
技术领域
本发明涉及可安装半导体元件等并具有散热功能的金属基基板及其制造方法，特别涉及组合了使用低温烧结陶瓷材料构成的陶瓷层和金属板的金属基基板及其制造方法。
背景技术
金属基基板具有比较高的散热功能，对于安装例如半导体元件这样的需要散热的电子部件是很有用的。在这样的金属基基板中，构成与金属板组合的基板层的材料可以使用陶瓷材料。
例如，低温烧结陶瓷材料是能够在1050℃以下的温度下烧结的陶瓷材料。因此，如果是在金属板上形成用低温烧结陶瓷材料构成的陶瓷层的金属基基板，即使不使用由熔点较高的金属形成的金属板，也能将生的低温烧结陶瓷层和金属板一体烧成而得到。
但是，上述金属基基板的情况下，烧成时使低温烧结陶瓷层和金属板不剥离是重要的课题。因此，采用在低温烧结陶瓷层和金属板之间形成接合玻璃层的方法。例如，日本专利特开平5-270934号公报（专利文献1）、日本专利特表平11-514627号公报(专利文献2)和日本专利特表平11-511719号公报(专利文献3)公开了涉及在金属板上形成接合玻璃层，在其上形成低温烧结陶瓷层一体烧结而得到的金属基基板的发明。
上述现有技术的结构中，必须在金属板和低温烧结陶瓷层之间预先形成接合玻璃层。像这样预先形成接合玻璃层的情况下，为了接合金属板和低温烧结陶瓷层，接合玻璃层必须形成得较厚，例如，专利文献1中记载了形成厚约25μm的接合玻璃层，专利文献2中记载了形成厚约35μm的接合玻璃层。专利文献3中没有公开具体的厚度。
另一方面，由于这样的接合玻璃层的目的是作为接合材料发挥作用，因此从弯曲强度的观点来看是非常脆弱的层。
而且，如果如前所述，接合玻璃层厚，则更容易因弯曲产生裂纹。这是因为接合玻璃层弯曲时，接合玻璃层越厚，接合玻璃层的一个主面侧上产生的应力和另一个主侧面上产生的应力之差就越大。
此外，现有技术中需要2次烧成工序，即用来在金属板上形成接合玻璃层的烧结接合工序和在其上形成低温烧结陶瓷生坯层后烧成的工序，工序繁杂，而且也需要大量的能量用来加热。
现有技术文献
专利文献
专利文献1:日本专利特开平5-270934号公报
专利文献2:日本专利特表平11-514627号公报
专利文献3:日本专利特表平11-511719号公报
发明内容
发明所要解决的技术问题
因此，本发明的目的是提供能解决上述问题的金属基基板及其制造方法。
解决技术问题所采用的技术方案
本发明首先针对具有金属板、在金属板上形成的玻璃层和在玻璃层上形成的低温烧结陶瓷层的金属基基板，为了解决上述技术课题，本发明的特征在于，玻璃层的厚度为1～5μm。
上述金属基基板可以由例如以下的具体构成实现：金属板至少在表面含有Cu成分时，玻璃层由Cu-Ba-Si系玻璃构成，低温烧结陶瓷层含有换算成BaO为10～40摩尔％的钡和换算成SiO2为40～80摩尔％的硅。
本发明还针对金属基基板的制造方法。本发明所涉及的金属基基板的制造方法的特征在于，具备：准备至少在表面含有Cu成分的金属板的工序；通过在金属板的表面上层叠包含含有换算成BaO为10～40摩尔％的钡和换算成SiO2为40～80摩尔％的硅的低温烧结材料的低温烧结陶瓷生坯层（セラミツクグリ一ン層），从而制作生的层叠体的工序；在低温烧结陶瓷生坯层烧结的温度下对该生的层叠体进行烧成的工序。
发明的效果
如果采用本发明涉及的金属基基板，由于强度较低的玻璃层薄，弯曲强度提高，因此玻璃层不易产生裂纹。
此外，如果采用本发明涉及的金属基基板的制造方法，可在不通过预先另外形成的接合玻璃层的情况下，在金属板上直接形成低温烧结陶瓷生坯层并烧成，从而在金属板和低温烧结陶瓷层之间形成玻璃层，金属板和低温烧结陶瓷层通过该玻璃层接合。如前所述，该玻璃层的厚度在1～5μm的范围内。
本发明涉及的金属基基板中，如果玻璃层由金属板的至少表面的成分和低温烧结陶瓷层的成分中的至少一部分形成，则由于玻璃层的组成与低温烧结陶瓷层的组成大致相同，因而在界面不易产生裂纹。
附图的简单说明
图1是表示具有基于本发明的一种实施方式的金属基基板的电子部件装置的截面图。
具体实施方式
首先，参照图1说明具有基于本发明的一种实施方式的金属基基板的电子部件装置。
图1所示的电子部件装置11具有金属基基板12和安装在其上的半导体元件13。
金属基基板12具有金属板14、在金属板14上形成的玻璃层22和在玻璃层22上形成的低温烧结陶瓷层15，还具有约束层16。这里，金属板14通过玻璃层22与低温烧结陶瓷层15接合。此外，低温烧结陶瓷层15和约束层16交替层叠，最上层是约束层16。最上层也可以是低温烧结陶瓷层15。
低温烧结陶瓷层15比约束层16厚。由后述的制造方法的说明可知，低温烧结陶瓷层15由低温烧结陶瓷材料的烧结体形成。另一方面，约束层16含有在上述低温烧结材料的烧结温度下不会烧结的难烧结性陶瓷材料，但在烧成时，由于低温烧结陶瓷层15中含有的低温烧结陶瓷材料的一部分向约束层16流动，因此难烧结性陶瓷材料固化、致密化。
玻璃层22具有1～5μm的厚度。
金属基底基材12中的由低温烧结陶瓷层15和约束层16构成的层叠体部分17中形成电路图案。图1中省略了若干处电路图案的图示，但是与半导体13相关，例如形成有若干处表面导体18、若干处层间连接导体19以及若干处面内布线导体20。此外，表面导体18的特定部分与半导体元件13通过焊线21电连接。
使用状态下，半导体元件13中产生的热量可以通过层叠体部分17被传导到金属板14，从金属板14散热。
优选玻璃层22仅由金属板14的成分和低温烧结陶瓷层15的成分形成。更具体地，如金属板14为铜板等含有Cu成分的情况下，玻璃层22由Cu-Ba-Si系玻璃形成，低温烧结陶瓷层15含有换算成BaO为10～40摩尔％的钡和换算成SiO2为40～80摩尔％的硅。
关于金属板14中含有的成分，由后述的制造方法的说明可知，由于金属板14的表面成分对玻璃层22的成分有影响，因此没有必要金属板14整体由均匀的材料形成。例如，想让金属板14的表面含有Cu成分时，可以是在铜板以外的金属板的表面上粘合铜板的材料或者如实施了镀铜的材料等仅在表面含有Cu成分的材料。
此外，较好是玻璃层22不含填料。这是因为金属板14和低温烧结陶瓷层15的接合强度会升高。如果含有填料，虽然可以提高弯曲强度，但是由于已通过使玻璃层22的厚度薄至1～5μm来提高弯曲强度，因此没有太大必要为了提高弯曲强度的目的而含有填料。
这样的电子部件装置11中使用的金属基基板12优选如下制造。
首先，准备金属板14，同时分别准备含有低温烧结陶瓷材料的低温烧结陶瓷浆料和含有在该低温烧结陶瓷材料的烧结温度下不会烧结的难烧结性陶瓷材料的难烧结性陶瓷浆料。这里，作为金属板14，准备至少在表面含有Cu成分的材料。此外，作为低温烧结陶瓷材料，使用含有换算成BaO为10～40摩尔％的钡和换算成SiO2为40～80摩尔％的硅的材料。
接着，在金属板14上层叠由低温烧结陶瓷浆料形成的低温烧结陶瓷生坯层和由难烧结性陶瓷浆料形成的难烧结性陶瓷生坯层，由此得到相当于金属基基板12烧成前的状态的生的层叠体。这里，低温烧结陶瓷生坯层是应成为低温烧结陶瓷层15的层，难烧结性陶瓷生坯层是应成为约束层16的层。此外，上述的表面导体18、层间连接导体19和面内布线导体20可以根据需要设置在特定的陶瓷生坯层。
实施上述工序时，优选通过在将低温烧结陶瓷浆料成形为片状而得到的陶瓷生片上将难烧结性陶瓷浆料成形为片状而得到低温烧结陶瓷生坯层和难烧结性陶瓷重叠的复合生片后，将所需片数的该复合生片层叠在金属板14上，进行压接。
也可以用下述方法代替上述方法：将低温烧结陶瓷浆料成形而得到的低温烧结陶瓷生片与将难烧结性陶瓷浆料成形而得到的难烧结性烧结陶瓷生片交替层叠在金属板14上。或者，可以在低温烧结陶瓷生片上反复进行难烧结性烧结陶瓷生坯层的成形和低温烧结陶瓷生坯层的成形。
接着，实施对具有金属板14以及低温烧结陶瓷生坯层和难烧结性烧结陶瓷生坯层的生的层叠体进行一体烧成的工序。在该烧成工序中，低温烧结陶瓷生坯层中含有的低温烧结陶瓷材料烧结而成为低温烧结陶瓷层15。此外，该低温烧结陶瓷材料的一部分向难烧结性陶瓷生坯层流动，将难烧结性陶瓷生坯层中含有的难烧结性陶瓷材料固化，使难烧结性陶瓷生坯层致密化，成为约束层16。
上述难烧结性陶瓷生坯层在烧成工序中实质上不在平面方向发生收缩，因此起到抑制低温烧结陶瓷生坯层在平面方向上的收缩的作用。因此，金属板14上的由低温烧结陶瓷生坯层和难烧结性陶瓷生坯层构成的层叠体部分整体在平面方向上的收缩有利地得到抑制。
这样得到的金属基基板12中，金属板14和低温烧结陶瓷层15之间形成厚1～5μm的玻璃层22，通过该玻璃层22在金属板14和低温烧结陶瓷层15之间实现良好的接合状态。
如上所述，低温烧结陶瓷层15含有换算成BaO为10～40摩尔％的钡和换算成SiO2为40～80摩尔％的硅。另一方面，金属板14至少在表面含有Cu成分。由于玻璃层22来自于金属板14和低温烧结陶瓷层15之间生成的反应层，因此由金属板14的至少表面部分和低温烧结陶瓷层15的成分中的至少一部分形成，故而在该实施方式中，由Cu-Ba-Si系玻璃形成。玻璃层22中可以含有约束层16的成分。
虽然在以上说明的实施方式中，在金属板14上形成的低温烧结陶瓷层15构成将多个低温烧结陶瓷层15和约束层16交替叠层而得的叠层体部分17的一部分，但是对于具有在金属板上只形成有低温烧结陶瓷层的结构的金属基基板也可适用本发明。
以下，对基于本发明实施的实验例进行说明。
[实验例1]
1.复合生片的制作
分别准备BaCO3、Al2O3和SiO2(石英)的粉末，通过将它们混合而得的混合粉末在840℃的温度下预煅烧120分钟，制作原料粉末，将该原料粉末和MnCO3粉末在添加有分散剂的有机溶剂中混合，然后添加树脂和增塑剂进一步混合，得到含有低温烧结陶瓷材料的低温烧结陶瓷浆料。
该低温烧结陶瓷浆料中含有的无机固体成分的组成比例如表1所示。表1中，BaCO3换算成BaO表示，MnCO3换算成MnO表示。
[表1]
Figure BDA00002188687800071
接着，将低温烧结陶瓷浆料脱泡后，通过刮刀法制成可以形成厚40μm的低温烧结陶瓷生坯层的陶瓷生片。
另一方面，将由SiO2:55.0摩尔％、BaO:20.0摩尔％、MgO:0.5摩尔％、CaO:5.5摩尔％、Al2O3:4.0摩尔％、B2O3:10.0摩尔％、Li2O:5.0摩尔％形成的玻璃粉末与Al2O3粉末按照40重量份:60重量份的比例在添加有分散剂的有机溶剂中混合，然后添加树脂和增塑剂进一步混合，得到含有难烧结性陶瓷材料的难烧结性陶瓷浆料。
接着，将难烧结性陶瓷浆料脱泡后，通过刮刀法在上述陶瓷生片上成形为厚4.0μm的片状。由此，获得由上述陶瓷生片得到的低温烧结陶瓷生坯层和由难烧结性陶瓷浆料成形得到的难烧结性陶瓷生坯层重叠而成的复合生片。
将上述难烧结性陶瓷浆料单独成形得到的陶瓷成形体确认即使在后述的烧成条件下烧成，也不会烧结。
2.评价用试样的制作
（1）第一评价用试样
在平面尺寸30mm见方、厚0.8mm的由纯铜形成的铜板的两面各层叠10片上述复合生片，在温度80℃、压力80kgf/cm2的条件下加压300秒，制成未烧成的第一评价用试样。这里，铜板与复合生片的低温烧结陶瓷生坯层侧相接，以难烧结性陶瓷生坯层在该评价用试样的两个主面上露出的方式层叠。
接着，将上述未烧成的第一评价用试样在氮中性气氛中脱脂后，在氮/氢还原性气氛中，在表2的“烧结温度”栏所示的最高温度下烧成，得到第一评价用试样。
（2）第二评价用试样
除了在上述第一评价用试样的制作过程中的复合生片的层叠阶段，采用各自在相同位置用铜糊料形成平面尺寸4mm见方的导体图案来构成电容器的复合生片作为从铜板侧起第7层和第8层的复合生片之外，经过与第一评价用试样同样的操作，得到第二评价用试样。
3．评价
如表2所示，评价“平面气孔率”、“界面接合性”和“绝缘可靠性”。
(1)平面气孔率
平面气孔率是为了评价烧结性而求出的参数，将第一评价用试样截面研磨，使用扫描型电子显微镜（SEM）以1000倍的倍数观察陶瓷部分，通过图像解析测定平面气孔率。对各试样进行10个视野的图像分析，其平均值示于表2。
（2）界面接合性
截面研磨第一评价用试样，使用SEM以5000倍的倍数观察在铜板和陶瓷部分的界面部发生裂纹的情况。对于各试样，观察30个视野，完全没有裂纹发生的情况判定为界面接合性良好，在表2中表示为“○”，另一方面，只要有一处产生裂纹就判定为界面接合不良，在表2中表示为“×”。
（3）绝缘可靠性
使用第二评价用试样，在温度:121℃、湿度:100％、导体图案间的施加电压:100DCV、试验时间:300小时的条件下进行试验。在测定电压:100DCV的条件下测定试验后的电阻值。测定结果示于表2。
[表2]
Figure BDA00002188687800091
关于表1所示的组成，满足BaO为10～40摩尔％和SiO2为40～80摩尔％的条件的试样2～6、9～12和14中，如表2所示，“气孔率”、“界面接合性”和“绝缘可靠性”全部得到良好的结果。通过波长分散型X射线分析法（WDX）对这些试样的截面进行了分析，结果确认在铜板和低温烧结陶瓷层的接合界面生成厚1～5μm的玻璃层。此外，确认在试样2～6和9～12的玻璃层中存在Cu、Ba、Si和Al等元素。在试样14的玻璃层中确认存在Cu、Ba、Si等元素，但不存在Al。
与之相对，试样1中BaO不足10摩尔％，“界面接合性”为“×”。另一方面，试样7中BaO超过40摩尔％，“绝缘可靠性”低。
此外，试样8中SiO2不足40摩尔％，“绝缘可靠性”低。另一方面，试样13中SiO2超过80摩尔％，“平面气孔率”低且“绝缘可靠性”低。
表1所示的组成中，Al2O3是为了提高化学耐久性和抗折强度而添加，是可不含的任意成分。此外，确认如果其添加量超过25摩尔％，则导致烧结不良。此外，MnO是作为烧结助剂发挥作用的成分，可以换成玻璃，确认若其添加量超过14摩尔％，则导致强度下降。
[实验例2]
1.复合生片的制作
分别准备BaCO3、Al2O3、SiO2(石英)和H3BO3的粉末，通过将它们混合而得的混合粉末在840℃的温度下预煅烧120分钟，制作原料粉末，将该原料粉末在添加有分散剂的有机溶剂中混合，然后添加树脂和增塑剂进一步混合，得到含有低温烧结陶瓷材料的低温烧结陶瓷浆料。
该低温烧结陶瓷浆料中含有的无机固体成分的组成比例如表3所示。表1中，BaCO3换算成BaO表示，H3BO3换算成B2O3表示。
[表3]
Figure BDA00002188687800101
接着，将低温烧结陶瓷浆料脱泡后，通过刮刀法，制作可以形成厚40μm的低温烧结陶瓷生坯层的陶瓷生片。
另一方面，将由SiO2:55.0摩尔％、BaO:20.0摩尔％、MgO:0.5摩尔％、CaO:5.5摩尔％、Al2O3:4.0摩尔％、B2O3:10.0摩尔％、Li2O:5.0摩尔％形成的玻璃粉末与Al2O3粉末按照35重量份:65重量份的比例在添加有分散剂的有机溶剂中混合，然后添加树脂和增塑剂进一步混合，得到含有难烧结性陶瓷材料的难烧结性陶瓷浆料。
接着，将难烧结性陶瓷浆料脱泡后，通过刮刀法在上述陶瓷生片上成形为厚3.0μm的片状。由此，获得由上述陶瓷生片得到的低温烧结陶瓷生坯层和由难烧结性陶瓷浆料成形得到的难烧结性陶瓷生坯层重叠而成的复合生片。
将上述难烧结性陶瓷浆料单独成形得到的陶瓷成形体确认即使在后述的烧成条件下烧成，也不会烧结。
2.评价用试样的制作
经过与实验例1同样的操作，得到第一评价用试样和第二评价用试样。
3．评价
用与实验例1同样的方法，如表4所示，评价“平面气孔率”、“界面接合性”和“绝缘可靠性”
[表4]
Figure BDA00002188687800111
得到与实验例1同样的评价结果。
即，关于表3所示的组成，满足BaO为10～40摩尔％和SiO2为40～80摩尔％的条件的试样22～25和28～31中，如表4所示，“气孔率”、“界面接合性”和“绝缘可靠性”全部得到良好的结果。通过波长分散型X射线分析法（WDX）对这些试样的截面进行了分析，结果确认在铜板和低温烧结陶瓷层的接合界面生成厚1～5μm的玻璃层，且在该玻璃层中存在Cu、Ba、Si和Al等元素。
与之相对，试样21中BaO不足10摩尔％，界面接合性为“×”。另一方面，试样26中BaO超过40摩尔％，“绝缘可靠性”低。
此外，试样27中SiO2不足40摩尔％，“绝缘可靠性”低。另一方面，试样32中SiO2超过80摩尔％，“平面气孔率”低且“绝缘可靠性”低。
符号的说明
11电子部件装置  12金属基基板
14金属板    15低温烧结陶瓷层
16约束层    22玻璃层。

Claims (4)

1.一种金属基基板，其特征在于，具有
金属板、
在所述金属板上形成的厚1～5μm的玻璃层、
在所述玻璃层上形成的低温烧结陶瓷层。
2.如权利要求1所述的金属基基板，其特征在于，所述玻璃层由所述金属板的至少表面的成分和所述述低温烧结陶瓷层的成分中的至少一部分形成。
3.如权利要求1或2所述的金属基基板，其特征在于，
所述金属板至少在表面含有Cu成分，
所述玻璃层由Cu-Ba-Si系玻璃形成，
所述低温烧结陶瓷层含有换算成BaO为10～40摩尔％的钡和换算成SiO2为40～80摩尔％的硅。
4.一种金属基基板的制造方法，其特征在于，具备：
准备至少在表面含有Cu成分的金属板的工序；
通过在金属板的表面上层叠包含含有换算成BaO为10～40摩尔％的钡和换算成SiO2为40～80摩尔％的硅的低温烧结材料的低温烧结陶瓷生坯层，从而制作生的层叠体的工序；
在低温烧结陶瓷生坯层烧结的温度下对所述生的层叠体进行烧成的工序。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081070A (en) * 1987-05-08 1992-01-14 Fujitsu Limited Superconducting circuit board and paste adopted therefor
JPH10167851A (ja) * 1996-12-05 1998-06-23 Ngk Insulators Ltd 金属とセラミックスの接合方法
JP2001267443A (ja) * 2000-03-14 2001-09-28 Kyocera Corp 半導体素子収納用パッケージ
CN1326242A (zh) * 2000-05-29 2001-12-12 北京科大天宇微电子材料技术开发有限公司 一种薄膜集成天线及其制作方法
JP2006095677A (ja) * 2004-08-30 2006-04-13 Showa Denko Kk 研磨方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970008145B1 (ko) * 1991-12-18 1997-05-21 제너럴 일렉트릭 컴페니 세라믹-온 금속-회로 기판 및 그 제조방법
US5256469A (en) 1991-12-18 1993-10-26 General Electric Company Multi-layered, co-fired, ceramic-on-metal circuit board for microelectronic packaging
JPH05286776A (ja) * 1992-04-06 1993-11-02 Noritake Co Ltd 金属−セラミックス複合構造体及びその製造方法
US5581876A (en) * 1995-01-27 1996-12-10 David Sarnoff Research Center, Inc. Method of adhering green tape to a metal support substrate with a bonding glass
KR100320630B1 (ko) 1995-01-27 2002-07-02 윌리암 제이. 버크 유전손실이낮은유리
WO1997016383A1 (en) 1995-11-03 1997-05-09 Sarnoff Corporation Multilayer co-fired ceramic compositions and ceramic-on-metal circuit board
US5725808A (en) * 1996-05-23 1998-03-10 David Sarnoff Research Center, Inc. Multilayer co-fired ceramic compositions and ceramic-on-metal circuit board
JP3601208B2 (ja) * 1996-09-26 2004-12-15 富士電機デバイステクノロジー株式会社 半導体装置用基板およびその製造方法
US5866240A (en) * 1997-03-06 1999-02-02 Sarnoff Corporation Thick ceramic on metal multilayer circuit board
US6753277B2 (en) * 2000-02-29 2004-06-22 Kyocera Corporation Ceramics having excellent high-frequency characteristics and method of producing the same
EP1833286A1 (en) 2004-12-28 2007-09-12 Ngk Spark Plug Co., Ltd Wiring board and wiring board manufacturing method
JP4825012B2 (ja) 2005-01-21 2011-11-30 日本特殊陶業株式会社 配線基板の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5081070A (en) * 1987-05-08 1992-01-14 Fujitsu Limited Superconducting circuit board and paste adopted therefor
JPH10167851A (ja) * 1996-12-05 1998-06-23 Ngk Insulators Ltd 金属とセラミックスの接合方法
JP2001267443A (ja) * 2000-03-14 2001-09-28 Kyocera Corp 半導体素子収納用パッケージ
CN1326242A (zh) * 2000-05-29 2001-12-12 北京科大天宇微电子材料技术开发有限公司 一种薄膜集成天线及其制作方法
JP2006095677A (ja) * 2004-08-30 2006-04-13 Showa Denko Kk 研磨方法

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