DE4021968C2 - - Google Patents

Info

Publication number
DE4021968C2
DE4021968C2 DE4021968A DE4021968A DE4021968C2 DE 4021968 C2 DE4021968 C2 DE 4021968C2 DE 4021968 A DE4021968 A DE 4021968A DE 4021968 A DE4021968 A DE 4021968A DE 4021968 C2 DE4021968 C2 DE 4021968C2
Authority
DE
Germany
Prior art keywords
cleaning
gas
clf
carbon
graphite
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE4021968A
Other languages
German (de)
English (en)
Other versions
DE4021968A1 (de
Inventor
Yoshiyuki Ube Jp Kobayashi
Takashi Yamaguchi Jp Suenaga
Isamu Mohri
Tsukasa Ube Jp Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Central Glass Co Ltd
Original Assignee
Central Glass Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Central Glass Co Ltd filed Critical Central Glass Co Ltd
Publication of DE4021968A1 publication Critical patent/DE4021968A1/de
Application granted granted Critical
Publication of DE4021968C2 publication Critical patent/DE4021968C2/de
Granted legal-status Critical Current

Links

Classifications

    • H10P72/0406—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C04B41/5346—Dry etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Detergent Compositions (AREA)
DE4021968A 1989-07-10 1990-07-10 Verfahren zur reinigung von mit anorganischen ablagerungen verunreinigten kohlenstoffteilen Granted DE4021968A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1177384A JP2539917B2 (ja) 1989-07-10 1989-07-10 フッ化塩素ガスによる炭素材料のクリ―ニング方法

Publications (2)

Publication Number Publication Date
DE4021968A1 DE4021968A1 (de) 1991-01-17
DE4021968C2 true DE4021968C2 (OSRAM) 1992-06-11

Family

ID=16029999

Family Applications (1)

Application Number Title Priority Date Filing Date
DE4021968A Granted DE4021968A1 (de) 1989-07-10 1990-07-10 Verfahren zur reinigung von mit anorganischen ablagerungen verunreinigten kohlenstoffteilen

Country Status (3)

Country Link
US (1) US5069724A (OSRAM)
JP (1) JP2539917B2 (OSRAM)
DE (1) DE4021968A1 (OSRAM)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5318668A (en) * 1991-10-24 1994-06-07 Matsushita Electric Industrial Co., Ltd. Dry etching method
US5486235A (en) * 1993-08-09 1996-01-23 Applied Materials, Inc. Plasma dry cleaning of semiconductor processing chambers
JPH08319586A (ja) * 1995-05-24 1996-12-03 Nec Yamagata Ltd 真空処理装置のクリーニング方法
US5868852A (en) * 1997-02-18 1999-02-09 Air Products And Chemicals, Inc. Partial clean fluorine thermal cleaning process
US6236023B1 (en) * 1998-07-13 2001-05-22 Mattson Technology, Inc. Cleaning process for rapid thermal processing system
US6246029B1 (en) * 1999-02-19 2001-06-12 Seh America, Inc. High temperature semiconductor crystal growing furnace component cleaning method
US7888685B2 (en) * 2004-07-27 2011-02-15 Memc Electronic Materials, Inc. High purity silicon carbide structures
JP5759534B2 (ja) * 2010-04-21 2015-08-05 インテグリス・インコーポレーテッド 被覆黒鉛物品、ならびに反応性イオンエッチングによる黒鉛物品の製造および再生
CN103771354A (zh) * 2013-12-12 2014-05-07 江苏大学 一种TixNb1-xSe2纳米材料的制备方法及其应用
CN103922293A (zh) * 2014-04-15 2014-07-16 江苏大学 一种Nb1-xTaxSe2纳米材料的制备方法
CN113429224B (zh) * 2021-05-14 2022-10-04 中国工程物理研究院材料研究所 一种碳材料的表面刻蚀方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1268377A (en) * 1968-06-17 1972-03-29 James Ephraim Lovelock An improved method for cleaning articles
GB2183204A (en) * 1985-11-22 1987-06-03 Advanced Semiconductor Mat Nitrogen trifluoride as an in-situ cleaning agent
JP2720966B2 (ja) * 1987-07-13 1998-03-04 セントラル硝子株式会社 薄膜を付着した部品の再生利用方法
JPH01152274A (ja) * 1987-12-09 1989-06-14 Iwatani Internatl Corp 膜形成操作系におけるフッ化塩素クリーニング後の汚染除去方法
JPH0231936A (ja) * 1988-07-21 1990-02-01 Toyota Motor Corp 前後輪差動制限装置の制御方法

Also Published As

Publication number Publication date
JPH0341199A (ja) 1991-02-21
US5069724A (en) 1991-12-03
JP2539917B2 (ja) 1996-10-02
DE4021968A1 (de) 1991-01-17

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee