DE3920644C1 - - Google Patents

Info

Publication number
DE3920644C1
DE3920644C1 DE19893920644 DE3920644A DE3920644C1 DE 3920644 C1 DE3920644 C1 DE 3920644C1 DE 19893920644 DE19893920644 DE 19893920644 DE 3920644 A DE3920644 A DE 3920644A DE 3920644 C1 DE3920644 C1 DE 3920644C1
Authority
DE
Germany
Prior art keywords
silicon
etching
etching liquid
aluminum
mixture
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE19893920644
Other languages
German (de)
English (en)
Inventor
Uwe Dipl.-Phys. Schnakenberg
Wolfgang Dipl.-Phys. Dr.-Ing. 1Ooo Berlin De Benecke
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Original Assignee
Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV filed Critical Fraunhofer Gesellschaft zur Foerderung der Angewandten Forschung eV
Priority to DE19893920644 priority Critical patent/DE3920644C1/de
Priority to PCT/DE1990/000418 priority patent/WO1991000614A1/de
Application granted granted Critical
Publication of DE3920644C1 publication Critical patent/DE3920644C1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3063—Electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30608—Anisotropic liquid etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3081—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their composition, e.g. multilayer masks, materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
DE19893920644 1989-06-23 1989-06-23 Expired - Lifetime DE3920644C1 (enExample)

Priority Applications (2)

Application Number Priority Date Filing Date Title
DE19893920644 DE3920644C1 (enExample) 1989-06-23 1989-06-23
PCT/DE1990/000418 WO1991000614A1 (de) 1989-06-23 1990-06-01 Verfahren zum anisotropen ätzen halbleitender materialien

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19893920644 DE3920644C1 (enExample) 1989-06-23 1989-06-23

Publications (1)

Publication Number Publication Date
DE3920644C1 true DE3920644C1 (enExample) 1990-12-20

Family

ID=6383445

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19893920644 Expired - Lifetime DE3920644C1 (enExample) 1989-06-23 1989-06-23

Country Status (2)

Country Link
DE (1) DE3920644C1 (enExample)
WO (1) WO1991000614A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4404885A1 (de) * 1994-01-12 1995-07-13 Gold Star Electronics Selektives Ätzverfahren
DE19926599C2 (de) * 1998-09-12 2002-07-04 Univ Gesamthochschule Kassel Lösung zum Ätzen von Silizium und Verfahren zum Ätzen von Silizium

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
DD241975A1 (de) * 1985-10-14 1987-01-07 Messgeraetewerk Zwonitz Veb K Herstellungsverfahren fuer halbleiterkoerper mit integrierten schaltungsteilen und geaetzten dreidimensionalen strukturen
DE3805752A1 (de) * 1988-02-24 1989-08-31 Fraunhofer Ges Forschung Anisotropes aetzverfahren mit elektrochemischem aetzstop

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR96065E (fr) * 1967-11-01 1972-05-19 Western Electric Co Procédé de gravure précise de semiconducteurs.
US4137123A (en) * 1975-12-31 1979-01-30 Motorola, Inc. Texture etching of silicon: method
DE3678761D1 (de) * 1985-07-15 1991-05-23 Philips Nv Verfahren zur herstellung einer halbleiteranordnung unter verwendung des aetzens einer ga-as-schicht mittels einer alkalischen loesung von wasserstoffperoxide.

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898141A (en) * 1974-02-08 1975-08-05 Bell Telephone Labor Inc Electrolytic oxidation and etching of III-V compound semiconductors
DD241975A1 (de) * 1985-10-14 1987-01-07 Messgeraetewerk Zwonitz Veb K Herstellungsverfahren fuer halbleiterkoerper mit integrierten schaltungsteilen und geaetzten dreidimensionalen strukturen
DE3805752A1 (de) * 1988-02-24 1989-08-31 Fraunhofer Ges Forschung Anisotropes aetzverfahren mit elektrochemischem aetzstop

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
Beyer, K.D.: Silicon Surface Cleaning Process. In: IBM TDB, Bd. 20, Nr. 5, Okt. 1977, S. 1746-1747 *
Hammond, B.R. et. al: Etch for Silicon. In: IBM TDB, Bd. 19, Nr. 4, Sept. 1976, S. 1159 *
Huo, D.T.C. et. al.: A Novel Etch Mask... *
In: J. Electrochem. Soc.: Solid-State Science and Technology, Nov. 1987, S. 2850-2856 *
Vossen, J.L. und Kern, W. (Hrsg.): Thin Film Processes, Academic Press, New York 1978, S. 144, 152, 153 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4404885A1 (de) * 1994-01-12 1995-07-13 Gold Star Electronics Selektives Ätzverfahren
DE4404885C2 (de) * 1994-01-12 2003-08-21 Gold Star Electronics Verfahren zum selektiven Ätzen von Siliziumnitrid gegenüber Silizium
DE19926599C2 (de) * 1998-09-12 2002-07-04 Univ Gesamthochschule Kassel Lösung zum Ätzen von Silizium und Verfahren zum Ätzen von Silizium

Also Published As

Publication number Publication date
WO1991000614A1 (de) 1991-01-10

Similar Documents

Publication Publication Date Title
DE60115909T2 (de) Reinigungsmittelzusammensetzung
DE69506948T2 (de) Selektive Ätzung von TiW für C4-Herstellung
DE60301907T2 (de) Reinigungsmittel nach CMP-Gebrauch
DE60212937T2 (de) Verfahren zum Entfernen von Rückständen von der Mikrostruktur eines Objektes
DE69024263T2 (de) Verfahren zum chemisch-mechanischen Polieren eines Halbleitersubstrats einer elektronischen Komponente und Polierzusammensetzung für dieses Verfahren
EP0477504A1 (en) Reduction of foreign particulate matter on semiconductor wafers
DE69112545T2 (de) Verfahren zur Herstellung eines Halbleiterbauelementes.
JPH07506616A (ja) エッチング液組成物
DE102005004110A1 (de) Korrosionshemmende Reinigungszusammensetzungen für Metallschichten und Muster an Halbleitersubstraten
DE69509815T2 (de) Halbleiter-Druckwandler mit Polysilizium-Membran und Einkristall-Dehnungsmesstreifen und Herstellungsverfahren dazu
DE2245809A1 (de) Aetzmittel zum aetzen von halbleitermaterial
EP0561236A1 (en) An aqueous ammonia composition for the cleaning of semi-conductor substrates
EP0236936A3 (de) Verfahren zur Vermeidung von Kurzschlüssen bei der Herstellung von elektrischen Bauelementen, vorzugsweise von aus amorphen Siliziumschichten bestehenden Solarzellen
DE3920644C1 (enExample)
EP0012861A1 (de) Verfahren zum selektiven Feststellen von durch Polieren verursachten Fehlern auf der Oberfläche von Siliziumplättchen
EP0742583B1 (de) Verfahren zum Entfernen beschädigter Kristallbereiche von Siliziumscheiben
DE102005049202A1 (de) Polierzusammensetzung und Polierverfahren unter Verwendung derselben
DE1917995B2 (de) Verfahren zur bildung eines isolierfilmes und danach hergestelltes halbleiterelement
DE10261407A1 (de) CMP-Slurry für ein Metall und Verfahren zur Herstellung eines Metallleiter-Kontaktstopfens einer Halbleitervorrichtung unter Verwendung der Slurry
KR101190907B1 (ko) 박리제 조성물
DE4003472C2 (de) Verfahren zum anisotropen Ätzen von Siliziumplatten
DE10230252B4 (de) Verfahren zur Herstellung integrierter Mikrosysteme
KR960012576B1 (ko) 알루미늄 합금배선막의 성능평가 방법
DE3842758A1 (de) Verfahren zum aetzen einer dreilagigen verdrahtungsebene bei der herstellung integrierter halbleiterschaltungen
WO2002045148A2 (de) Reinigungslösung für halbleiterscheiben im beol-bereich

Legal Events

Date Code Title Description
8100 Publication of the examined application without publication of unexamined application
D1 Grant (no unexamined application published) patent law 81
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee