DE3889357T2 - Verfahren zur Herstellung einer integrierten Kundenwunschschaltung mit isoliertem Gate. - Google Patents
Verfahren zur Herstellung einer integrierten Kundenwunschschaltung mit isoliertem Gate.Info
- Publication number
- DE3889357T2 DE3889357T2 DE3889357T DE3889357T DE3889357T2 DE 3889357 T2 DE3889357 T2 DE 3889357T2 DE 3889357 T DE3889357 T DE 3889357T DE 3889357 T DE3889357 T DE 3889357T DE 3889357 T2 DE3889357 T2 DE 3889357T2
- Authority
- DE
- Germany
- Prior art keywords
- production
- insulated gate
- integrated customer
- customer circuit
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62039599A JPH0758734B2 (ja) | 1987-02-23 | 1987-02-23 | 絶縁ゲ−ト型セミカスタム集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3889357D1 DE3889357D1 (de) | 1994-06-09 |
DE3889357T2 true DE3889357T2 (de) | 1994-10-20 |
Family
ID=12557577
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3889357T Expired - Lifetime DE3889357T2 (de) | 1987-02-23 | 1988-02-22 | Verfahren zur Herstellung einer integrierten Kundenwunschschaltung mit isoliertem Gate. |
Country Status (5)
Country | Link |
---|---|
US (1) | US4868705A (de) |
EP (1) | EP0280236B1 (de) |
JP (1) | JPH0758734B2 (de) |
KR (1) | KR910001982B1 (de) |
DE (1) | DE3889357T2 (de) |
Families Citing this family (38)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR900001398B1 (ko) * | 1987-11-30 | 1990-03-09 | 삼성전자 주식회사 | 양방성 입출력 셀 |
JPH07105446B2 (ja) * | 1988-01-11 | 1995-11-13 | 株式会社東芝 | Mos型半導体装置の入力保護回路 |
JPH02113623A (ja) * | 1988-10-21 | 1990-04-25 | Sharp Corp | 集積回路の静電気保護回路 |
US5200876A (en) * | 1989-04-10 | 1993-04-06 | Matsushita Electric Industrial Co., Ltd. | Electrostatic breakdown protection circuit |
US5124877A (en) * | 1989-07-18 | 1992-06-23 | Gazelle Microcircuits, Inc. | Structure for providing electrostatic discharge protection |
JP2754072B2 (ja) * | 1990-02-07 | 1998-05-20 | 三菱電機株式会社 | 半導体装置の入力回路 |
DE4004526C1 (de) * | 1990-02-14 | 1991-09-05 | Texas Instruments Deutschland Gmbh, 8050 Freising, De | |
US5229635A (en) * | 1991-08-21 | 1993-07-20 | Vlsi Technology, Inc. | ESD protection circuit and method for power-down application |
US5513064A (en) * | 1991-12-13 | 1996-04-30 | Texas Instruments Incorporated | Method and device for improving I/O ESD tolerance |
GB2273831B (en) * | 1992-12-24 | 1997-03-26 | Motorola Semiconducteurs | Voltage protection circuit |
US5311391A (en) * | 1993-05-04 | 1994-05-10 | Hewlett-Packard Company | Electrostatic discharge protection circuit with dynamic triggering |
US5473500A (en) * | 1994-01-13 | 1995-12-05 | Atmel Corporation | Electrostatic discharge circuit for high speed, high voltage circuitry |
US5532896A (en) * | 1994-04-26 | 1996-07-02 | Coussens; Eugene | Distributed silicon controlled rectifiers for ESD protection |
JPH088391A (ja) * | 1994-06-17 | 1996-01-12 | Mitsubishi Electric Corp | 半導体回路 |
JP2834034B2 (ja) * | 1995-06-22 | 1998-12-09 | 日本電気アイシーマイコンシステム株式会社 | 半導体装置 |
US5745323A (en) * | 1995-06-30 | 1998-04-28 | Analog Devices, Inc. | Electrostatic discharge protection circuit for protecting CMOS transistors on integrated circuit processes |
US5729419A (en) * | 1995-11-20 | 1998-03-17 | Integrated Device Technology, Inc. | Changed device model electrostatic discharge protection circuit for output drivers and method of implementing same |
US5751525A (en) * | 1996-01-05 | 1998-05-12 | Analog Devices, Inc. | EOS/ESD Protection circuit for an integrated circuit with operating/test voltages exceeding power supply rail voltages |
US5831312A (en) * | 1996-04-09 | 1998-11-03 | United Microelectronics Corporation | Electrostic discharge protection device comprising a plurality of trenches |
JP3464340B2 (ja) * | 1996-04-19 | 2003-11-10 | 沖電気工業株式会社 | 半導体集積回路装置 |
US5739998A (en) * | 1996-07-12 | 1998-04-14 | Kabushiki Kaisha Toshiba | Protective circuit and semiconductor integrated circuit incorporating protective circuit |
US5917689A (en) * | 1996-09-12 | 1999-06-29 | Analog Devices, Inc. | General purpose EOS/ESD protection circuit for bipolar-CMOS and CMOS integrated circuits |
US5748028A (en) * | 1996-10-31 | 1998-05-05 | International Business Machines Corporation | Method and apparatus for multi-level input voltage receiver circuit |
US5838146A (en) * | 1996-11-12 | 1998-11-17 | Analog Devices, Inc. | Method and apparatus for providing ESD/EOS protection for IC power supply pins |
US5991134A (en) * | 1997-06-19 | 1999-11-23 | Advanced Micro Devices, Inc. | Switchable ESD protective shunting circuit for semiconductor devices |
JP4054093B2 (ja) * | 1997-10-09 | 2008-02-27 | 株式会社ルネサステクノロジ | 半導体装置 |
US6181193B1 (en) * | 1999-10-08 | 2001-01-30 | International Business Machines Corporation | Using thick-oxide CMOS devices to interface high voltage integrated circuits |
US7333310B2 (en) * | 2003-12-18 | 2008-02-19 | Stmicroelectronics, Inc. | ESD bonding pad |
US20050180071A1 (en) * | 2004-02-13 | 2005-08-18 | Yi-Hsun Wu | Circuit and method for ESD protection |
US20050224883A1 (en) * | 2004-04-06 | 2005-10-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Circuit design for increasing charge device model immunity |
JP5712591B2 (ja) * | 2010-12-10 | 2015-05-07 | セイコーエプソン株式会社 | 集積回路装置、電子機器及び集積回路装置の製造方法 |
US8941958B2 (en) * | 2011-04-22 | 2015-01-27 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
JP5969961B2 (ja) * | 2013-07-12 | 2016-08-17 | 富士フイルム株式会社 | 配線基板 |
US9659924B2 (en) * | 2014-05-25 | 2017-05-23 | Mediatek Inc. | Signal receiving circuit and signal transceiving circuit |
DE102020109476A1 (de) | 2020-02-02 | 2021-08-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Integrierte schaltung |
CN113053870A (zh) | 2020-02-02 | 2021-06-29 | 台湾积体电路制造股份有限公司 | 集成电路 |
CN113271089B (zh) * | 2021-04-14 | 2023-04-11 | 杭州士兰微电子股份有限公司 | 栅极驱动电路及其智能功率模块 |
WO2023210631A1 (ja) * | 2022-04-27 | 2023-11-02 | ローム株式会社 | I/o回路、半導体装置、セルライブラリ、半導体装置の回路設計方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4264941A (en) * | 1979-02-14 | 1981-04-28 | National Semiconductor Corporation | Protective circuit for insulated gate field effect transistor integrated circuits |
US4282556A (en) * | 1979-05-21 | 1981-08-04 | Rca Corporation | Input protection device for insulated gate field effect transistor |
JPS57211248A (en) * | 1981-06-22 | 1982-12-25 | Hitachi Ltd | Semiconductor integrated circuit device |
US4527213A (en) * | 1981-11-27 | 1985-07-02 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit device with circuits for protecting an input section against an external surge |
JPS6027145A (ja) * | 1983-07-25 | 1985-02-12 | Hitachi Ltd | 半導体集積回路装置 |
JPS60136241A (ja) * | 1983-12-23 | 1985-07-19 | Toshiba Corp | ゲ−トアレイの入力回路 |
JPS60142556A (ja) * | 1983-12-28 | 1985-07-27 | Toshiba Corp | 入力保護回路 |
JPS613442A (ja) * | 1984-06-15 | 1986-01-09 | Nec Corp | 半導体装置 |
JPS61150232A (ja) * | 1984-12-24 | 1986-07-08 | Matsushita Electric Ind Co Ltd | 半導体集積回路の入出力回路 |
US4736271A (en) * | 1987-06-23 | 1988-04-05 | Signetics Corporation | Protection device utilizing one or more subsurface diodes and associated method of manufacture |
-
1987
- 1987-02-23 JP JP62039599A patent/JPH0758734B2/ja not_active Expired - Lifetime
-
1988
- 1988-02-18 US US07/156,740 patent/US4868705A/en not_active Expired - Lifetime
- 1988-02-22 DE DE3889357T patent/DE3889357T2/de not_active Expired - Lifetime
- 1988-02-22 EP EP88102574A patent/EP0280236B1/de not_active Expired - Lifetime
- 1988-02-23 KR KR1019880001874A patent/KR910001982B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH0758734B2 (ja) | 1995-06-21 |
EP0280236B1 (de) | 1994-05-04 |
US4868705A (en) | 1989-09-19 |
KR910001982B1 (ko) | 1991-03-30 |
JPS63205928A (ja) | 1988-08-25 |
DE3889357D1 (de) | 1994-06-09 |
KR880010500A (ko) | 1988-10-10 |
EP0280236A2 (de) | 1988-08-31 |
EP0280236A3 (en) | 1990-07-25 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |