DE3883421D1 - Verfahren zum Ätzen eines Halbleiterkörpers. - Google Patents

Verfahren zum Ätzen eines Halbleiterkörpers.

Info

Publication number
DE3883421D1
DE3883421D1 DE88200751T DE3883421T DE3883421D1 DE 3883421 D1 DE3883421 D1 DE 3883421D1 DE 88200751 T DE88200751 T DE 88200751T DE 3883421 T DE3883421 T DE 3883421T DE 3883421 D1 DE3883421 D1 DE 3883421D1
Authority
DE
Germany
Prior art keywords
etching
semiconductor body
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE88200751T
Other languages
English (en)
Other versions
DE3883421T2 (de
Inventor
Peter James Dobson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE3883421D1 publication Critical patent/DE3883421D1/de
Application granted granted Critical
Publication of DE3883421T2 publication Critical patent/DE3883421T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
  • Semiconductor Lasers (AREA)
DE88200751T 1987-04-24 1988-04-20 Verfahren zum Ätzen eines Halbleiterkörpers. Expired - Fee Related DE3883421T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08709727A GB2203892A (en) 1987-04-24 1987-04-24 A method of etching a semiconductor body

Publications (2)

Publication Number Publication Date
DE3883421D1 true DE3883421D1 (de) 1993-09-30
DE3883421T2 DE3883421T2 (de) 1994-03-10

Family

ID=10616284

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88200751T Expired - Fee Related DE3883421T2 (de) 1987-04-24 1988-04-20 Verfahren zum Ätzen eines Halbleiterkörpers.

Country Status (5)

Country Link
US (1) US4838987A (de)
EP (1) EP0290069B1 (de)
JP (1) JP2571258B2 (de)
DE (1) DE3883421T2 (de)
GB (1) GB2203892A (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0396010A3 (de) * 1989-05-05 1991-03-27 Applied Materials, Inc. Verfahren und Vorrichtung zur Überwachung der Wachstums- und Ätzgeschwindigkeit von Materialien
WO1992007716A1 (en) * 1990-11-01 1992-05-14 Landsman Robert M Printing press
US5238531A (en) * 1992-01-17 1993-08-24 Hughes Aircraft Company Apparatus and method for fabricating a chirped grating in a surface emitting distributed feedback semiconductor laser diode device
US6177710B1 (en) * 1996-06-13 2001-01-23 The Furukawa Electric Co., Ltd. Semiconductor waveguide type photodetector and method for manufacturing the same
US6258437B1 (en) * 1999-03-31 2001-07-10 Advanced Micro Devices, Inc. Test structure and methodology for characterizing etching in an integrated circuit fabrication process
DE102006042195A1 (de) * 2006-09-08 2008-03-27 Osram Opto Semiconductors Gmbh Etalon und optoelektronische Halbleitervorrichtung
US7963870B2 (en) * 2008-05-01 2011-06-21 Shimano Inc. Bicycle rear derailleur
US20130130417A1 (en) * 2011-11-22 2013-05-23 Jar-Yu WU Manufacturing method of a light-emitting device
US9488595B2 (en) * 2014-03-28 2016-11-08 Intel Corporation Inspection of microelectronic devices using near-infrared light
CN110800089B (zh) 2017-03-31 2024-03-08 尼尔森科学有限公司 三维半导体制造

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4415414A (en) * 1982-09-10 1983-11-15 Bell Telephone Laboratories, Incorporated Etching of optical surfaces
US4525687A (en) * 1983-02-28 1985-06-25 At&T Bell Laboratories High speed light modulator using multiple quantum well structures
US4518456A (en) * 1983-03-11 1985-05-21 At&T Bell Laboratories Light induced etching of InP by aqueous solutions of H3 PO4
US4648938A (en) * 1985-10-11 1987-03-10 The United States Of America As Represented By The United States Department Of Energy Composition/bandgap selective dry photochemical etching of semiconductor materials

Also Published As

Publication number Publication date
EP0290069B1 (de) 1993-08-25
EP0290069A1 (de) 1988-11-09
JPS63281431A (ja) 1988-11-17
GB2203892A (en) 1988-10-26
US4838987A (en) 1989-06-13
JP2571258B2 (ja) 1997-01-16
GB8709727D0 (en) 1987-05-28
DE3883421T2 (de) 1994-03-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: PHILIPS ELECTRONICS N.V., EINDHOVEN, NL

8327 Change in the person/name/address of the patent owner

Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N

8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee