DE3882882D1 - Verfahren zur herstellung einer siliziumstruktur auf einem isolator. - Google Patents

Verfahren zur herstellung einer siliziumstruktur auf einem isolator.

Info

Publication number
DE3882882D1
DE3882882D1 DE8888420302T DE3882882T DE3882882D1 DE 3882882 D1 DE3882882 D1 DE 3882882D1 DE 8888420302 T DE8888420302 T DE 8888420302T DE 3882882 T DE3882882 T DE 3882882T DE 3882882 D1 DE3882882 D1 DE 3882882D1
Authority
DE
Germany
Prior art keywords
isolator
producing
silicon structure
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888420302T
Other languages
English (en)
Other versions
DE3882882T2 (de
Inventor
Guillermo Bomchil
Aomar Halimaoui
Roland Herino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Orange SA
Original Assignee
France Telecom SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by France Telecom SA filed Critical France Telecom SA
Application granted granted Critical
Publication of DE3882882D1 publication Critical patent/DE3882882D1/de
Publication of DE3882882T2 publication Critical patent/DE3882882T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02488—Insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02598—Microstructure monocrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76245—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using full isolation by porous oxide silicon, i.e. FIPOS techniques
DE88420302T 1987-09-11 1988-09-08 Verfahren zur Herstellung einer Siliziumstruktur auf einem Isolator. Expired - Fee Related DE3882882T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR8712913A FR2620571B1 (fr) 1987-09-11 1987-09-11 Procede de fabrication d'une structure de silicium sur isolant

Publications (2)

Publication Number Publication Date
DE3882882D1 true DE3882882D1 (de) 1993-09-09
DE3882882T2 DE3882882T2 (de) 1994-03-24

Family

ID=9355001

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88420302T Expired - Fee Related DE3882882T2 (de) 1987-09-11 1988-09-08 Verfahren zur Herstellung einer Siliziumstruktur auf einem Isolator.

Country Status (3)

Country Link
EP (1) EP0312466B1 (de)
DE (1) DE3882882T2 (de)
FR (1) FR2620571B1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3253099B2 (ja) * 1990-03-27 2002-02-04 キヤノン株式会社 半導体基板の作製方法
GB9025236D0 (en) * 1990-11-20 1991-01-02 Secr Defence Silicon-on porous-silicon;method of production
EP0536790B1 (de) * 1991-10-11 2004-03-03 Canon Kabushiki Kaisha Verfahren zur Herstellung von Halbleiter-Produkten
JP3250673B2 (ja) * 1992-01-31 2002-01-28 キヤノン株式会社 半導体素子基体とその作製方法
WO1999001893A2 (de) * 1997-06-30 1999-01-14 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur herstellung von schichtartigen gebilden auf einem substrat, substrat sowie mittels des verfahrens hergestellte halbleiterbauelemente
DE19841430A1 (de) * 1998-09-10 2000-05-25 Inst Physikalische Elektronik Verfahren zur Herstellung kristalliner Halbleiterschichten
FR2797093B1 (fr) * 1999-07-26 2001-11-02 France Telecom Procede de realisation d'un dispositif comprenant un empilement de plans de boites quantiques sur un substrat de silicium ou germanium monocristallin
DE10117363A1 (de) * 2001-04-06 2002-10-17 Infineon Technologies Ag Verfahren zum Herstellen einer porösen Si0¶2¶-Scheibe
FR2968316B1 (fr) * 2010-12-01 2013-06-28 Commissariat Energie Atomique Procede de preparation d'une couche de silicium cristallise a gros grains

Also Published As

Publication number Publication date
DE3882882T2 (de) 1994-03-24
FR2620571B1 (fr) 1990-01-12
EP0312466A1 (de) 1989-04-19
FR2620571A1 (fr) 1989-03-17
EP0312466B1 (de) 1993-08-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee