DE3882856D1 - Herstellung einer polykristallinen schicht. - Google Patents

Herstellung einer polykristallinen schicht.

Info

Publication number
DE3882856D1
DE3882856D1 DE8888308427T DE3882856T DE3882856D1 DE 3882856 D1 DE3882856 D1 DE 3882856D1 DE 8888308427 T DE8888308427 T DE 8888308427T DE 3882856 T DE3882856 T DE 3882856T DE 3882856 D1 DE3882856 D1 DE 3882856D1
Authority
DE
Germany
Prior art keywords
production
polycrystalline layer
polycrystalline
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888308427T
Other languages
English (en)
Other versions
DE3882856T2 (de
Inventor
Anne Chiang
I-Wei Wu
Tiao-Yuan Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Application granted granted Critical
Publication of DE3882856D1 publication Critical patent/DE3882856D1/de
Publication of DE3882856T2 publication Critical patent/DE3882856T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02587—Structure
    • H01L21/0259—Microstructure
    • H01L21/02595—Microstructure polycrystalline
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02664—Aftertreatments
    • H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Recrystallisation Techniques (AREA)
  • Physical Vapour Deposition (AREA)
DE88308427T 1987-09-18 1988-09-13 Herstellung einer polykristallinen Schicht. Expired - Fee Related DE3882856T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US9825987A 1987-09-18 1987-09-18

Publications (2)

Publication Number Publication Date
DE3882856D1 true DE3882856D1 (de) 1993-09-09
DE3882856T2 DE3882856T2 (de) 1993-11-25

Family

ID=22268436

Family Applications (1)

Application Number Title Priority Date Filing Date
DE88308427T Expired - Fee Related DE3882856T2 (de) 1987-09-18 1988-09-13 Herstellung einer polykristallinen Schicht.

Country Status (3)

Country Link
EP (1) EP0308166B1 (de)
JP (1) JP2746606B2 (de)
DE (1) DE3882856T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0390607B1 (de) * 1989-03-31 1998-01-07 Canon Kabushiki Kaisha Verfahren zur Herstellung eines halbleitenden kristallinen Filmes
US5290712A (en) * 1989-03-31 1994-03-01 Canon Kabushiki Kaisha Process for forming crystalline semiconductor film
DE59010851D1 (de) * 1989-04-27 1998-11-12 Max Planck Gesellschaft Halbleiterstruktur mit einer 2D-Ladungsträgerschicht und Herstellungsverfahren
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法
US5207863A (en) * 1990-04-06 1993-05-04 Canon Kabushiki Kaisha Crystal growth method and crystalline article obtained by said method
US5385865A (en) * 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
DE4114162A1 (de) * 1990-05-02 1991-11-07 Nippon Sheet Glass Co Ltd Verfahren zur herstellung eines polykristallinen halbleiterfilms
TW374196B (en) * 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
JP2982739B2 (ja) * 1997-04-22 1999-11-29 日本電気株式会社 半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58122036A (ja) * 1982-01-12 1983-07-20 Matsushita Electric Ind Co Ltd 多結晶体膜の製造方法
US4509990A (en) * 1982-11-15 1985-04-09 Hughes Aircraft Company Solid phase epitaxy and regrowth process with controlled defect density profiling for heteroepitaxial semiconductor on insulator composite substrates
JPS61174621A (ja) * 1985-01-28 1986-08-06 Nippon Telegr & Teleph Corp <Ntt> 半導体薄膜結晶の製造方法

Also Published As

Publication number Publication date
EP0308166A2 (de) 1989-03-22
DE3882856T2 (de) 1993-11-25
JPH01108379A (ja) 1989-04-25
JP2746606B2 (ja) 1998-05-06
EP0308166A3 (en) 1990-02-21
EP0308166B1 (de) 1993-08-04

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee