DE3880169D1 - Herstellungsmethode fuer junction-feldeffekttransistoren in kaskodenschaltung. - Google Patents

Herstellungsmethode fuer junction-feldeffekttransistoren in kaskodenschaltung.

Info

Publication number
DE3880169D1
DE3880169D1 DE8888101652T DE3880169T DE3880169D1 DE 3880169 D1 DE3880169 D1 DE 3880169D1 DE 8888101652 T DE8888101652 T DE 8888101652T DE 3880169 T DE3880169 T DE 3880169T DE 3880169 D1 DE3880169 D1 DE 3880169D1
Authority
DE
Germany
Prior art keywords
manufacturing
field effect
effect transistors
junction field
cascode switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE8888101652T
Other languages
English (en)
Other versions
DE3880169T2 (de
Inventor
Jun-Ichi Patent Division Okano
Kiyohito Patent Divi Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE3880169D1 publication Critical patent/DE3880169D1/de
Publication of DE3880169T2 publication Critical patent/DE3880169T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/098—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being PN junction gate field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE8888101652T 1987-02-09 1988-02-04 Herstellungsmethode fuer junction-feldeffekttransistoren in kaskodenschaltung. Expired - Fee Related DE3880169T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62026366A JPS63194368A (ja) 1987-02-09 1987-02-09 電界効果型トランジスタとその製造方法

Publications (2)

Publication Number Publication Date
DE3880169D1 true DE3880169D1 (de) 1993-05-19
DE3880169T2 DE3880169T2 (de) 1993-07-29

Family

ID=12191500

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888101652T Expired - Fee Related DE3880169T2 (de) 1987-02-09 1988-02-04 Herstellungsmethode fuer junction-feldeffekttransistoren in kaskodenschaltung.

Country Status (5)

Country Link
US (1) US4800172A (de)
EP (1) EP0278410B1 (de)
JP (1) JPS63194368A (de)
KR (1) KR910002308B1 (de)
DE (1) DE3880169T2 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5309007A (en) * 1991-09-30 1994-05-03 The United States Of America As Represented By The Secretary Of The Navy Junction field effect transistor with lateral gate voltage swing (GVS-JFET)
JPH0738337A (ja) * 1993-07-20 1995-02-07 Hitachi Ltd 低歪カスケード回路
EP1100552B2 (de) 1998-07-24 2009-12-30 Kao Corporation Desodorierende absorbierende schicht
JP4307664B2 (ja) * 1999-12-03 2009-08-05 株式会社ルネサステクノロジ 半導体装置
US6750698B1 (en) * 2000-09-29 2004-06-15 Lovoltech, Inc. Cascade circuits utilizing normally-off junction field effect transistors for low on-resistance and low voltage applications
US20040256692A1 (en) * 2003-06-19 2004-12-23 Keith Edmund Kunz Composite analog power transistor and method for making the same
US7829941B2 (en) * 2006-01-24 2010-11-09 Alpha & Omega Semiconductor, Ltd. Configuration and method to form MOSFET devices with low resistance silicide gate and mesa contact regions
US7582922B2 (en) * 2007-11-26 2009-09-01 Infineon Technologies Austria Ag Semiconductor device
US9214457B2 (en) 2011-09-20 2015-12-15 Alpha & Omega Semiconductor Incorporated Method of integrating high voltage devices
CN104350601B (zh) * 2012-05-23 2018-04-20 Hrl实验室有限责任公司 Hemt装置和制造hemt装置的方法
US9379195B2 (en) 2012-05-23 2016-06-28 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US10700201B2 (en) 2012-05-23 2020-06-30 Hrl Laboratories, Llc HEMT GaN device with a non-uniform lateral two dimensional electron gas profile and method of manufacturing the same
US8680536B2 (en) 2012-05-23 2014-03-25 Hrl Laboratories, Llc Non-uniform two dimensional electron gas profile in III-Nitride HEMT devices
US9000484B2 (en) 2012-05-23 2015-04-07 Hrl Laboratories, Llc Non-uniform lateral profile of two-dimensional electron gas charge density in type III nitride HEMT devices using ion implantation through gray scale mask

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5247992B2 (de) * 1973-06-19 1977-12-06
JPS522271A (en) * 1975-06-24 1977-01-08 Tokyo Tsushin Kozai Kk Electromagnetic counter
JPS5425175A (en) * 1977-07-27 1979-02-24 Nippon Gakki Seizo Kk Integrated circuit device
JPS5475280A (en) * 1977-11-29 1979-06-15 Nec Corp Junction-type field effect transistor
JPS5515275A (en) * 1978-07-19 1980-02-02 Semiconductor Res Found Charge transfer device
JPS55102253A (en) * 1979-01-29 1980-08-05 Nec Corp Manufacture of semiconductor device
JPS55160443A (en) * 1979-05-22 1980-12-13 Semiconductor Res Found Manufacture of semiconductor integrated circuit device
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
JPS60101972A (ja) * 1983-11-08 1985-06-06 Matsushita Electric Ind Co Ltd デユアルゲ−ト電界効果トランジスタ
US4516316A (en) * 1984-03-27 1985-05-14 Advanced Micro Devices, Inc. Method of making improved twin wells for CMOS devices by controlling spatial separation

Also Published As

Publication number Publication date
EP0278410A1 (de) 1988-08-17
JPS63194368A (ja) 1988-08-11
KR880010506A (ko) 1988-10-10
DE3880169T2 (de) 1993-07-29
KR910002308B1 (ko) 1991-04-11
EP0278410B1 (de) 1993-04-14
US4800172A (en) 1989-01-24

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee