DE3873173D1 - Vorrichtung fuer hf-induktionsheizung. - Google Patents
Vorrichtung fuer hf-induktionsheizung.Info
- Publication number
- DE3873173D1 DE3873173D1 DE8888108274T DE3873173T DE3873173D1 DE 3873173 D1 DE3873173 D1 DE 3873173D1 DE 8888108274 T DE8888108274 T DE 8888108274T DE 3873173 T DE3873173 T DE 3873173T DE 3873173 D1 DE3873173 D1 DE 3873173D1
- Authority
- DE
- Germany
- Prior art keywords
- induction heating
- induction
- heating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B6/00—Heating by electric, magnetic or electromagnetic fields
- H05B6/02—Induction heating
- H05B6/22—Furnaces without an endless core
- H05B6/30—Arrangements for remelting or zone melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
- C30B13/20—Heating of the molten zone by induction, e.g. hot wire technique
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1076—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone
- Y10T117/1088—Apparatus for crystallization from liquid or supercritical state having means for producing a moving solid-liquid-solid zone including heating or cooling details
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP12580187A JPS63291887A (ja) | 1987-05-25 | 1987-05-25 | 半導体単結晶製造装置 |
JP12580287A JPS63291388A (ja) | 1987-05-25 | 1987-05-25 | 浮遊帯域溶融法に用いる単巻誘導加熱コイル |
JP12580387A JPS63291389A (ja) | 1987-05-25 | 1987-05-25 | 浮遊帯域溶融法に用いる誘導加熱装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3873173D1 true DE3873173D1 (de) | 1992-09-03 |
DE3873173T2 DE3873173T2 (de) | 1993-03-04 |
Family
ID=27315207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE8888108274T Expired - Fee Related DE3873173T2 (de) | 1987-05-25 | 1988-05-24 | Vorrichtung fuer hf-induktionsheizung. |
Country Status (3)
Country | Link |
---|---|
US (1) | US4942279A (de) |
EP (1) | EP0292920B1 (de) |
DE (1) | DE3873173T2 (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0699218B2 (ja) * | 1989-04-26 | 1994-12-07 | 信越半導体株式会社 | 単結晶育成用コイル |
US5461215A (en) * | 1994-03-17 | 1995-10-24 | Massachusetts Institute Of Technology | Fluid cooled litz coil inductive heater and connector therefor |
JP3127981B2 (ja) * | 1995-01-31 | 2001-01-29 | 信越半導体株式会社 | 高周波誘導加熱装置 |
US6727483B2 (en) | 2001-08-27 | 2004-04-27 | Illinois Tool Works Inc. | Method and apparatus for delivery of induction heating to a workpiece |
US6713737B1 (en) | 2001-11-26 | 2004-03-30 | Illinois Tool Works Inc. | System for reducing noise from a thermocouple in an induction heating system |
US8038931B1 (en) | 2001-11-26 | 2011-10-18 | Illinois Tool Works Inc. | On-site induction heating apparatus |
US6956189B1 (en) | 2001-11-26 | 2005-10-18 | Illinois Tool Works Inc. | Alarm and indication system for an on-site induction heating system |
US7015439B1 (en) | 2001-11-26 | 2006-03-21 | Illinois Tool Works Inc. | Method and system for control of on-site induction heating |
US6911089B2 (en) | 2002-11-01 | 2005-06-28 | Illinois Tool Works Inc. | System and method for coating a work piece |
US20040084443A1 (en) * | 2002-11-01 | 2004-05-06 | Ulrich Mark A. | Method and apparatus for induction heating of a wound core |
DE10328859B4 (de) * | 2003-06-20 | 2007-09-27 | Leibniz-Institut Für Festkörper- Und Werkstoffforschung Dresden E.V. | Verfahren und Vorrichtung zum Ziehen von Einkristallen durch Zonenziehen |
US20050230379A1 (en) * | 2004-04-20 | 2005-10-20 | Vianney Martawibawa | System and method for heating a workpiece during a welding operation |
JP6111033B2 (ja) * | 2011-12-05 | 2017-04-05 | 高周波熱錬株式会社 | 加熱コイル |
DE102011089429A1 (de) * | 2011-12-21 | 2013-06-27 | Siltronic Ag | Verfahren und Vorrichtung zur Herstellung eines Einkristalls |
DE102012022965B4 (de) * | 2012-11-19 | 2018-12-06 | Forschungsverbund Berlin E.V. | Vorrichtung für das tiegelfreie Zonenziehen von Kristallstäben |
CN103255472B (zh) * | 2013-04-25 | 2016-12-28 | 浙江晶盛机电股份有限公司 | 具有双电源加热的区熔炉热场及保温方法 |
CN103993349A (zh) * | 2014-05-06 | 2014-08-20 | 洛阳金诺机械工程有限公司 | 一种使用区熔法拉制单晶硅棒的高频线圈 |
CN104264220A (zh) * | 2014-07-02 | 2015-01-07 | 洛阳金诺机械工程有限公司 | 一种用产品料直接拉制硅芯的方法 |
CN108070901A (zh) * | 2016-11-17 | 2018-05-25 | 上海新昇半导体科技有限公司 | 浮区法生长晶体的设备及方法 |
CN110257899A (zh) * | 2019-06-24 | 2019-09-20 | 天津中环领先材料技术有限公司 | 一种平衡热场的区熔线圈 |
EP3995607A4 (de) * | 2019-07-05 | 2023-09-06 | SUMCO Corporation | Induktionsheizspule und vorrichtung zur herstellung von einkristallen damit |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL274145A (de) * | 1961-03-17 | |||
DE1208292B (de) * | 1963-03-29 | 1966-01-05 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial |
DE1644004A1 (de) * | 1967-04-21 | 1970-04-02 | Siemens Ag | Verfahren und Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
CH472236A (de) * | 1968-05-30 | 1969-05-15 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes |
DE1802524B1 (de) * | 1968-10-11 | 1970-06-04 | Siemens Ag | Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes,insbesondere Halbleiterstabes |
BE789504A (fr) * | 1971-12-07 | 1973-01-15 | Siemens Ag | Bobine de chauffage par induction pour la fusion par zones sanscreuset de barreaux semiconducteurs |
US3725630A (en) * | 1971-12-20 | 1973-04-03 | Cycle Dyne Inc | Inductive coil for heating a loop of conductive material |
DE2538812A1 (de) * | 1975-09-01 | 1977-03-03 | Wacker Chemitronic | Verfahren zum dotieren von halbleiterstaeben |
US4220839A (en) * | 1978-01-05 | 1980-09-02 | Topsil A/S | Induction heating coil for float zone melting of semiconductor rods |
DE2812216A1 (de) * | 1978-03-20 | 1979-10-11 | Siemens Ag | Verfahren zum besseren aufschmelzen des vorratsstabes beim tiegelfreien zonenschmelzen |
DE3143146A1 (de) * | 1981-10-30 | 1983-05-11 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3143207A1 (de) * | 1981-10-30 | 1983-05-11 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsspule zum tiegelfreien zonenschmelzen |
DE3226713A1 (de) * | 1982-07-16 | 1984-01-19 | Siemens AG, 1000 Berlin und 8000 München | Als flachspule ausgebildete induktionsheizspule zum tiegelfreien zonenschmelzen |
DE3625669A1 (de) * | 1986-07-29 | 1988-02-04 | Siemens Ag | Induktionsheizer zum tiegelfreien zonenschmelzen |
-
1988
- 1988-05-24 EP EP88108274A patent/EP0292920B1/de not_active Expired - Lifetime
- 1988-05-24 DE DE8888108274T patent/DE3873173T2/de not_active Expired - Fee Related
-
1989
- 1989-12-20 US US07/456,203 patent/US4942279A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE3873173T2 (de) | 1993-03-04 |
US4942279A (en) | 1990-07-17 |
EP0292920B1 (de) | 1992-07-29 |
EP0292920A1 (de) | 1988-11-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |