DE3871851T2 - Trockenaetzverfahren fuer aluminiumschichten. - Google Patents

Trockenaetzverfahren fuer aluminiumschichten.

Info

Publication number
DE3871851T2
DE3871851T2 DE8888302615T DE3871851T DE3871851T2 DE 3871851 T2 DE3871851 T2 DE 3871851T2 DE 8888302615 T DE8888302615 T DE 8888302615T DE 3871851 T DE3871851 T DE 3871851T DE 3871851 T2 DE3871851 T2 DE 3871851T2
Authority
DE
Germany
Prior art keywords
substrate
etching
temperature
layer
aluminum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE8888302615T
Other languages
German (de)
English (en)
Other versions
DE3871851D1 (de
Inventor
Takashi Kurimoto
Moritaka Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Publication of DE3871851D1 publication Critical patent/DE3871851D1/de
Application granted granted Critical
Publication of DE3871851T2 publication Critical patent/DE3871851T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
DE8888302615T 1987-03-27 1988-03-24 Trockenaetzverfahren fuer aluminiumschichten. Expired - Lifetime DE3871851T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62071737A JPS63238288A (ja) 1987-03-27 1987-03-27 ドライエツチング方法

Publications (2)

Publication Number Publication Date
DE3871851D1 DE3871851D1 (de) 1992-07-16
DE3871851T2 true DE3871851T2 (de) 1992-12-03

Family

ID=13469137

Family Applications (1)

Application Number Title Priority Date Filing Date
DE8888302615T Expired - Lifetime DE3871851T2 (de) 1987-03-27 1988-03-24 Trockenaetzverfahren fuer aluminiumschichten.

Country Status (5)

Country Link
US (1) US4798650A (enExample)
EP (1) EP0289131B1 (enExample)
JP (1) JPS63238288A (enExample)
KR (1) KR920005633B1 (enExample)
DE (1) DE3871851T2 (enExample)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4878995A (en) * 1987-07-02 1989-11-07 Kabushiki Kaisha Toshiba Method of dry etching and apparatus for use in such method
JPS6432633A (en) * 1987-07-29 1989-02-02 Hitachi Ltd Taper etching method
US5147500A (en) * 1987-07-31 1992-09-15 Hitachi, Ltd. Dry etching method
DE68928977T2 (de) * 1988-02-09 1999-08-19 Fujitsu Ltd. Trockenätzen mit Wasserstoffbromid oder Brom
US5316616A (en) * 1988-02-09 1994-05-31 Fujitsu Limited Dry etching with hydrogen bromide or bromine
JPH0478133A (ja) * 1990-07-20 1992-03-12 Tokyo Electron Ltd プラズマ処理装置
US5259922A (en) * 1990-08-14 1993-11-09 Matsushita Electric Industrial Co., Ltd. Drying etching method
JPH05109728A (ja) * 1991-10-16 1993-04-30 Nec Corp 半導体装置の製造方法
US5460684A (en) * 1992-12-04 1995-10-24 Tokyo Electron Limited Stage having electrostatic chuck and plasma processing apparatus using same
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films
US5591301A (en) * 1994-12-22 1997-01-07 Siemens Aktiengesellschaft Plasma etching method
JPH09172001A (ja) * 1995-12-15 1997-06-30 Sony Corp 半導体製造装置の温度制御方法および装置
US5849641A (en) * 1997-03-19 1998-12-15 Lam Research Corporation Methods and apparatus for etching a conductive layer to improve yield
US6432812B1 (en) * 2001-07-16 2002-08-13 Lsi Logic Corporation Method of coupling capacitance reduction
KR100541152B1 (ko) * 2003-07-18 2006-01-11 매그나칩 반도체 유한회사 반도체 소자의 금속 배선층 형성 방법
US20060000553A1 (en) * 2004-06-30 2006-01-05 Arun Ramamoorthy Minimizing particle contamination of semiconductor wafers during pressure evacuation by selective orientation and shielding
JP4519567B2 (ja) * 2004-08-11 2010-08-04 株式会社日立ハイテクノロジーズ 走査型電子顕微鏡およびこれを用いた試料観察方法
US8157951B2 (en) * 2005-10-11 2012-04-17 Applied Materials, Inc. Capacitively coupled plasma reactor having very agile wafer temperature control
US8034180B2 (en) * 2005-10-11 2011-10-11 Applied Materials, Inc. Method of cooling a wafer support at a uniform temperature in a capacitively coupled plasma reactor
US8092638B2 (en) * 2005-10-11 2012-01-10 Applied Materials Inc. Capacitively coupled plasma reactor having a cooled/heated wafer support with uniform temperature distribution
US20070091540A1 (en) * 2005-10-20 2007-04-26 Applied Materials, Inc. Method of processing a workpiece in a plasma reactor using multiple zone feed forward thermal control
US9767988B2 (en) * 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US12505980B2 (en) 2009-05-01 2025-12-23 Advanced Energy Industries, Inc. Apparatus to produce a waveform
US8431486B2 (en) * 2010-08-10 2013-04-30 International Business Machines Corporation Interconnect structure for improved time dependent dielectric breakdown
KR101800321B1 (ko) * 2016-04-18 2017-11-22 최상준 건식 에칭장치
KR101913684B1 (ko) * 2016-10-21 2018-11-01 주식회사 볼트크리에이션 건식 에칭장치 및 그 제어방법
TWI872423B (zh) 2017-11-17 2025-02-11 新加坡商Aes 全球公司 用於在空間域和時間域上控制基板上的電漿處理之系統和方法，及相關的電腦可讀取媒體
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5744747A (en) * 1980-08-29 1982-03-13 Toyota Motor Corp Controlling device of air-fuel ratio
US4384918A (en) * 1980-09-30 1983-05-24 Fujitsu Limited Method and apparatus for dry etching and electrostatic chucking device used therein
JPS57116774A (en) * 1981-01-14 1982-07-20 Hitachi Ltd Etching method
US4462882A (en) * 1983-01-03 1984-07-31 Massachusetts Institute Of Technology Selective etching of aluminum
JPS6159658A (ja) * 1984-08-29 1986-03-27 Pioneer Electronic Corp デイスクロ−デイング機構
GB2171360A (en) * 1985-02-19 1986-08-28 Oerlikon Buehrle Inc Etching aluminum/copper alloy films
DE3752140T2 (de) * 1986-09-05 1998-03-05 Hitachi Ltd Trockenes Ätzverfahren

Also Published As

Publication number Publication date
JPH0428791B2 (enExample) 1992-05-15
KR880011893A (ko) 1988-10-31
US4798650A (en) 1989-01-17
JPS63238288A (ja) 1988-10-04
EP0289131B1 (en) 1992-06-10
DE3871851D1 (de) 1992-07-16
EP0289131A1 (en) 1988-11-02
KR920005633B1 (ko) 1992-07-10

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee