DE3856441D1 - Methode zur Erzeugung eines feinen Musters - Google Patents
Methode zur Erzeugung eines feinen MustersInfo
- Publication number
- DE3856441D1 DE3856441D1 DE3856441T DE3856441T DE3856441D1 DE 3856441 D1 DE3856441 D1 DE 3856441D1 DE 3856441 T DE3856441 T DE 3856441T DE 3856441 T DE3856441 T DE 3856441T DE 3856441 D1 DE3856441 D1 DE 3856441D1
- Authority
- DE
- Germany
- Prior art keywords
- creating
- fine pattern
- fine
- pattern
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62206745A JPS6450425A (en) | 1987-08-20 | 1987-08-20 | Formation of fine pattern |
Publications (2)
Publication Number | Publication Date |
---|---|
DE3856441D1 true DE3856441D1 (de) | 2000-12-14 |
DE3856441T2 DE3856441T2 (de) | 2001-04-05 |
Family
ID=16528394
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE3856441T Expired - Lifetime DE3856441T2 (de) | 1987-08-20 | 1988-08-19 | Methode zur Erzeugung eines feinen Musters |
Country Status (5)
Country | Link |
---|---|
US (1) | US5032491A (de) |
EP (1) | EP0304077B1 (de) |
JP (1) | JPS6450425A (de) |
KR (1) | KR930001956B1 (de) |
DE (1) | DE3856441T2 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2606900B2 (ja) * | 1988-09-08 | 1997-05-07 | 株式会社東芝 | パターン形成方法 |
US4996167A (en) * | 1990-06-29 | 1991-02-26 | At&T Bell Laboratories | Method of making electrical contacts to gate structures in integrated circuits |
EP0773477B1 (de) * | 1990-09-21 | 2001-05-30 | Dai Nippon Printing Co., Ltd. | Verfahren zur Herstellung einer Phasenschieber-Fotomaske |
US5330879A (en) * | 1992-07-16 | 1994-07-19 | Micron Technology, Inc. | Method for fabrication of close-tolerance lines and sharp emission tips on a semiconductor wafer |
JP2803999B2 (ja) * | 1993-11-10 | 1998-09-24 | 現代電子産業株式会社 | 半導体装置の微細パターン製造法 |
US5470681A (en) * | 1993-12-23 | 1995-11-28 | International Business Machines Corporation | Phase shift mask using liquid phase oxide deposition |
KR0141941B1 (ko) * | 1994-11-11 | 1998-07-15 | 문정환 | 감광막의 패터닝방법 |
WO2006033872A2 (en) * | 2004-09-21 | 2006-03-30 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
US20090200266A1 (en) * | 2008-02-08 | 2009-08-13 | Molecular Imprints, Inc. | Template Pillar Formation |
AT511721B1 (de) | 2011-11-03 | 2013-02-15 | Avl List Gmbh | Einlassstrang für eine brennkraftmaschine |
US11961738B2 (en) | 2021-02-12 | 2024-04-16 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of manufacturing semiconductor devices |
CN114420774A (zh) * | 2021-11-29 | 2022-04-29 | 江苏科来材料科技有限公司 | 一种晶硅电池的制绒工艺 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5893330A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | 半導体装置の製造方法 |
JPS58132927A (ja) * | 1982-02-03 | 1983-08-08 | Matsushita Electronics Corp | パタ−ン形成方法 |
JPS5976428A (ja) * | 1982-10-26 | 1984-05-01 | Nippon Telegr & Teleph Corp <Ntt> | 微細パタ−ン形成法 |
JPS59163829A (ja) * | 1983-03-08 | 1984-09-14 | Matsushita Electronics Corp | パタ−ン形成方法 |
JPH0665225B2 (ja) * | 1984-01-13 | 1994-08-22 | 株式会社東芝 | 半導体記憶装置の製造方法 |
US4511430A (en) * | 1984-01-30 | 1985-04-16 | International Business Machines Corporation | Control of etch rate ratio of SiO2 /photoresist for quartz planarization etch back process |
JPS60214532A (ja) * | 1984-04-11 | 1985-10-26 | Nippon Telegr & Teleph Corp <Ntt> | パタ−ン形成方法 |
JPS60218843A (ja) * | 1984-04-13 | 1985-11-01 | Nippon Telegr & Teleph Corp <Ntt> | パタン形成方法 |
US4634645A (en) * | 1984-04-13 | 1987-01-06 | Nippon Telegraph And Telephone Corporation | Method of forming resist micropattern |
JPS6154629A (ja) * | 1984-08-24 | 1986-03-18 | Nec Corp | フオト・レジストパタ−ンの形成方法 |
US4707218A (en) * | 1986-10-28 | 1987-11-17 | International Business Machines Corporation | Lithographic image size reduction |
JPS63111619A (ja) * | 1986-10-29 | 1988-05-16 | Mitsubishi Electric Corp | 半導体装置の製造方法 |
US4732658A (en) * | 1986-12-03 | 1988-03-22 | Honeywell Inc. | Planarization of silicon semiconductor devices |
-
1987
- 1987-08-20 JP JP62206745A patent/JPS6450425A/ja active Pending
-
1988
- 1988-08-19 DE DE3856441T patent/DE3856441T2/de not_active Expired - Lifetime
- 1988-08-19 EP EP88113503A patent/EP0304077B1/de not_active Expired - Lifetime
- 1988-08-20 KR KR1019880010605A patent/KR930001956B1/ko not_active IP Right Cessation
- 1988-08-22 US US07/234,725 patent/US5032491A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0304077A3 (de) | 1990-07-18 |
JPS6450425A (en) | 1989-02-27 |
EP0304077B1 (de) | 2000-11-08 |
EP0304077A2 (de) | 1989-02-22 |
DE3856441T2 (de) | 2001-04-05 |
KR930001956B1 (ko) | 1993-03-20 |
KR890004392A (ko) | 1989-04-21 |
US5032491A (en) | 1991-07-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |