DE69027707T2 - Photoempfindliche Zusammensetzung und Verfahren zur Herstellung von Mustern unter Verwendung dieser Zusammensetzung - Google Patents

Photoempfindliche Zusammensetzung und Verfahren zur Herstellung von Mustern unter Verwendung dieser Zusammensetzung

Info

Publication number
DE69027707T2
DE69027707T2 DE69027707T DE69027707T DE69027707T2 DE 69027707 T2 DE69027707 T2 DE 69027707T2 DE 69027707 T DE69027707 T DE 69027707T DE 69027707 T DE69027707 T DE 69027707T DE 69027707 T2 DE69027707 T2 DE 69027707T2
Authority
DE
Germany
Prior art keywords
composition
making patterns
photosensitive
photosensitive composition
patterns
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69027707T
Other languages
English (en)
Other versions
DE69027707D1 (de
Inventor
Yasunobu Onishi
Hirokazu Niki
Yoshihito Kobayashi
Rumiko Hayase
Toru Ushirogouchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1081453A external-priority patent/JPH02262151A/ja
Priority claimed from JP1146503A external-priority patent/JPH0311352A/ja
Priority claimed from JP1150444A external-priority patent/JPH0317652A/ja
Priority claimed from JP1150445A external-priority patent/JPH0317653A/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69027707D1 publication Critical patent/DE69027707D1/de
Publication of DE69027707T2 publication Critical patent/DE69027707T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/04—Chromates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0755—Non-macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G03F7/0758—Macromolecular compounds containing Si-O, Si-C or Si-N bonds with silicon- containing groups in the side chains
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/124—Carbonyl compound containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/124—Carbonyl compound containing
    • Y10S430/125—Carbonyl in heterocyclic compound

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
DE69027707T 1989-04-03 1990-04-03 Photoempfindliche Zusammensetzung und Verfahren zur Herstellung von Mustern unter Verwendung dieser Zusammensetzung Expired - Fee Related DE69027707T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1081453A JPH02262151A (ja) 1989-04-03 1989-04-03 感光性組成物
JP1146503A JPH0311352A (ja) 1989-06-08 1989-06-08 パターン形成方法
JP1150444A JPH0317652A (ja) 1989-06-15 1989-06-15 感光性組成物
JP1150445A JPH0317653A (ja) 1989-06-15 1989-06-15 感光性組成物

Publications (2)

Publication Number Publication Date
DE69027707D1 DE69027707D1 (de) 1996-08-14
DE69027707T2 true DE69027707T2 (de) 1997-01-09

Family

ID=27466571

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69027707T Expired - Fee Related DE69027707T2 (de) 1989-04-03 1990-04-03 Photoempfindliche Zusammensetzung und Verfahren zur Herstellung von Mustern unter Verwendung dieser Zusammensetzung

Country Status (4)

Country Link
US (1) US5091282A (de)
EP (1) EP0396254B1 (de)
KR (1) KR920005712B1 (de)
DE (1) DE69027707T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0523957A1 (de) * 1991-07-17 1993-01-20 Japan Synthetic Rubber Co., Ltd. Strahlungsempfindliche Zusammensetzung
US6703181B1 (en) * 1993-03-12 2004-03-09 Kabushiki Kaisha Toshiba Photosensitive composition having uniform concentration distribution of components and pattern formation method using the same
JP4718390B2 (ja) * 2006-08-01 2011-07-06 信越化学工業株式会社 レジスト下層膜材料並びにそれを用いたレジスト下層膜基板およびパターン形成方法
US10032633B1 (en) * 2017-01-17 2018-07-24 International Business Machines Corporation Image transfer using EUV lithographic structure and double patterning process

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3440052A (en) * 1965-06-10 1969-04-22 Eastman Kodak Co Sensitized silver halide emulsions with holopolar dyes containing a dilactone ring
JPS5852638A (ja) * 1981-09-24 1983-03-28 Hitachi Ltd 放射線感応性組成物
JPS63270703A (ja) * 1986-12-09 1988-11-08 Canon Inc 光重合開始剤及び記録媒体
US4902603A (en) * 1987-10-05 1990-02-20 Olin Corporation Photoresist compositions containing selected 6-acetoxy cyclohexadienone photosensitizers and novolak resins
US4920028A (en) * 1988-03-31 1990-04-24 Morton Thiokol, Inc. High contrast high thermal stability positive photoresists with mixed cresol and hydroxybenzaldehyde prepared novolak and photosensitive diazoquinone
US4910115A (en) * 1988-11-21 1990-03-20 The Mead Corporation Light-sensitive polymerizable compositions containing silver compounds
US4939229A (en) * 1989-05-12 1990-07-03 Rohm And Haas Company Method for preparing lithographically sensitive branched novolaks using a mannich base intermediate

Also Published As

Publication number Publication date
US5091282A (en) 1992-02-25
EP0396254B1 (de) 1996-07-10
EP0396254A2 (de) 1990-11-07
DE69027707D1 (de) 1996-08-14
KR920005712B1 (ko) 1992-07-13
KR900016811A (ko) 1990-11-14
EP0396254A3 (de) 1991-11-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee