DE3855322D1 - Anordnung zur Detektion von Magnetismus - Google Patents

Anordnung zur Detektion von Magnetismus

Info

Publication number
DE3855322D1
DE3855322D1 DE3855322T DE3855322T DE3855322D1 DE 3855322 D1 DE3855322 D1 DE 3855322D1 DE 3855322 T DE3855322 T DE 3855322T DE 3855322 T DE3855322 T DE 3855322T DE 3855322 D1 DE3855322 D1 DE 3855322D1
Authority
DE
Germany
Prior art keywords
magnetism
arrangement
detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3855322T
Other languages
English (en)
Other versions
DE3855322T2 (de
Inventor
Yoshimi Yoshino
Kenichi Ao
Ichiro Izawa
Toshikazu Arasuna
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Denso Corp
Original Assignee
NipponDenso Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NipponDenso Co Ltd filed Critical NipponDenso Co Ltd
Publication of DE3855322D1 publication Critical patent/DE3855322D1/de
Application granted granted Critical
Publication of DE3855322T2 publication Critical patent/DE3855322T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R33/00—Arrangements or instruments for measuring magnetic variables
    • G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
    • G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
    • G01R33/09—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N59/00—Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
DE3855322T 1987-08-21 1988-08-17 Anordnung zur Detektion von Magnetismus Expired - Lifetime DE3855322T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP20883287 1987-08-21
JP10851888 1988-04-30

Publications (2)

Publication Number Publication Date
DE3855322D1 true DE3855322D1 (de) 1996-07-04
DE3855322T2 DE3855322T2 (de) 1996-10-10

Family

ID=26448375

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3855322T Expired - Lifetime DE3855322T2 (de) 1987-08-21 1988-08-17 Anordnung zur Detektion von Magnetismus

Country Status (4)

Country Link
US (1) US5005064A (de)
EP (1) EP0304280B1 (de)
KR (1) KR910007387B1 (de)
DE (1) DE3855322T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5686835A (en) * 1989-01-18 1997-11-11 Nippondenso Co., Ltd Physical quantity detection device for converting a physical quantity into a corresponding time interval
US5262666A (en) * 1989-05-15 1993-11-16 Nippondenso Co., Ltd. Semiconductor device with a nickel alloy protective resistor
JP2868266B2 (ja) * 1990-01-25 1999-03-10 株式会社日本自動車部品総合研究所 信号位相差検出回路及び信号位相差検出方法
JP3483895B2 (ja) * 1990-11-01 2004-01-06 株式会社東芝 磁気抵抗効果膜
US5998040A (en) * 1990-12-10 1999-12-07 Hitachi, Ltd. Multilayer which shows magnetoresistive effect and magnetoresistive element using the same
JP2690623B2 (ja) * 1991-02-04 1997-12-10 松下電器産業株式会社 磁気抵抗効果素子
US5406116A (en) * 1991-03-11 1995-04-11 Texas Instruments Incorporated Dopant implant for conductive charge leakage layer for use with voltage contrast
US5321283A (en) * 1991-07-30 1994-06-14 Microwave Technology, Inc. High frequency JFET
JPH0677557A (ja) * 1992-07-30 1994-03-18 Mitsubishi Electric Corp 混成集積回路装置
US5486804A (en) * 1993-12-03 1996-01-23 Hughes Aircraft Company Integrated magnetoresistive sensor fabrication method and apparatus
US5667879A (en) * 1995-09-13 1997-09-16 Honeywell Inc. TaN/NiFe/TaN anisotropic magnetic sensor element
US6153318A (en) * 1996-04-30 2000-11-28 Rothberg; Gerald M. Layered material having properties that are variable by an applied electric field
US5831426A (en) * 1996-08-16 1998-11-03 Nonvolatile Electronics, Incorporated Magnetic current sensor
DE19857275A1 (de) * 1998-12-11 2000-06-15 Johannes V Kluge Integrierbarer Magnetfeldsensor aus Halbleitermaterial
US6429640B1 (en) 2000-08-21 2002-08-06 The United States Of America As Represented By The Secretary Of The Air Force GMR high current, wide dynamic range sensor
JP3565268B2 (ja) * 2001-06-22 2004-09-15 株式会社東芝 磁気抵抗効果素子、磁気ヘッド及び磁気再生装置
KR100590211B1 (ko) * 2002-11-21 2006-06-15 가부시키가이샤 덴소 자기 임피던스 소자, 그를 이용한 센서 장치 및 그 제조방법
CN100438011C (zh) * 2004-03-24 2008-11-26 雅马哈株式会社 半导体装置、磁传感器和磁传感器单元
US7557562B2 (en) * 2004-09-17 2009-07-07 Nve Corporation Inverted magnetic isolator

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4036723A (en) * 1975-08-21 1977-07-19 International Business Machines Corporation RF bias sputtering method for producing insulating films free of surface irregularities
JPS6045804B2 (ja) * 1978-02-28 1985-10-12 日本電気株式会社 角度検出器
JPS55111184A (en) * 1979-02-20 1980-08-27 Pioneer Electronic Corp Reluctance unit and manufacturing method thereof
CH651152A5 (de) * 1979-11-27 1985-08-30 Landis & Gyr Ag Messwandler zum messen eines insbesondere von einem messstrom erzeugten magnetfeldes.
JPS5816580A (ja) * 1981-07-22 1983-01-31 Sharp Corp 磁気抵抗効果素子のバイアス磁界印加方法
JPS601514A (ja) * 1983-06-17 1985-01-07 Copal Co Ltd 変位量検出器
JPS6021976A (ja) * 1983-07-14 1985-02-04 ユニチカ株式会社 事故防止外衣用ポリエステル織物の製造方法
JPH0719923B2 (ja) * 1984-12-14 1995-03-06 日本電装株式会社 位置検出装置
JPS61226982A (ja) * 1985-04-01 1986-10-08 Asahi Chem Ind Co Ltd ハイブリツド・ホ−ルｉｃ
JPS61241993A (ja) * 1985-04-19 1986-10-28 Hitachi Ltd 複合磁気抵抗効果素子
JPS62174968A (ja) * 1986-01-29 1987-07-31 Hitachi Ltd 半導体装置
US5019461A (en) * 1986-12-08 1991-05-28 Honeywell Inc. Resistive overlayer for thin film devices
DE8704192U1 (de) * 1987-03-20 1988-07-14 Robert Bosch Gmbh, 70469 Stuttgart Sensor

Also Published As

Publication number Publication date
EP0304280A3 (en) 1990-06-27
US5005064A (en) 1991-04-02
EP0304280B1 (de) 1996-05-29
KR890004174A (ko) 1989-04-20
KR910007387B1 (ko) 1991-09-25
DE3855322T2 (de) 1996-10-10
EP0304280A2 (de) 1989-02-22

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Legal Events

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8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)