DE3810901C2 - - Google Patents

Info

Publication number
DE3810901C2
DE3810901C2 DE3810901A DE3810901A DE3810901C2 DE 3810901 C2 DE3810901 C2 DE 3810901C2 DE 3810901 A DE3810901 A DE 3810901A DE 3810901 A DE3810901 A DE 3810901A DE 3810901 C2 DE3810901 C2 DE 3810901C2
Authority
DE
Germany
Prior art keywords
layer
film
face
reflectivity
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE3810901A
Other languages
German (de)
English (en)
Other versions
DE3810901A1 (de
Inventor
Hitoshi Kagawa
Ryo Itami Hyogo Jp Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of DE3810901A1 publication Critical patent/DE3810901A1/de
Application granted granted Critical
Publication of DE3810901C2 publication Critical patent/DE3810901C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
DE3810901A 1987-03-31 1988-03-30 Halbleiterlaser Granted DE3810901A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62079934A JPH0644663B2 (ja) 1987-03-31 1987-03-31 半導体レ−ザ

Publications (2)

Publication Number Publication Date
DE3810901A1 DE3810901A1 (de) 1988-10-27
DE3810901C2 true DE3810901C2 (https=) 1992-10-08

Family

ID=13704147

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3810901A Granted DE3810901A1 (de) 1987-03-31 1988-03-30 Halbleiterlaser

Country Status (4)

Country Link
US (1) US4852112A (https=)
JP (1) JPH0644663B2 (https=)
DE (1) DE3810901A1 (https=)
FR (1) FR2613548B1 (https=)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0750814B2 (ja) * 1988-09-27 1995-05-31 三菱電機株式会社 多点発光型半導体レーザ装置
JPH04154185A (ja) * 1990-10-17 1992-05-27 Mitsubishi Electric Corp 半導体レーザ装置
US5590144A (en) * 1990-11-07 1996-12-31 Fuji Electric Co., Ltd. Semiconductor laser device
DE69118482T2 (de) * 1990-11-07 1996-08-22 Fuji Electric Co Ltd Laserdiode mit einer Schutzschicht auf ihrer lichtemittierenden Endfläche
JPH0697570A (ja) * 1992-09-14 1994-04-08 Matsushita Electric Ind Co Ltd 半導体レーザー素子端面の反射鏡およびその製造方法
JP3381073B2 (ja) * 1992-09-28 2003-02-24 ソニー株式会社 半導体レーザ装置とその製造方法
US5523590A (en) * 1993-10-20 1996-06-04 Oki Electric Industry Co., Ltd. LED array with insulating films
US5517039A (en) * 1994-11-14 1996-05-14 Hewlett-Packard Company Semiconductor devices fabricated with passivated high aluminum-content III-V material
JPH10509283A (ja) * 1995-09-14 1998-09-08 フィリップス エレクトロニクス ネムローゼ フェンノートシャップ 半導体ダイオードレーザ及びその製造方法
JPH1093193A (ja) * 1996-09-10 1998-04-10 Oki Electric Ind Co Ltd 光半導体装置及び光源
US5812580A (en) * 1996-11-05 1998-09-22 Coherent, Inc. Laser diode facet coating
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
JP2002134827A (ja) * 2000-10-27 2002-05-10 Tdk Corp 半導体レーザ及びその製造方法並びにこれを用いた近接場光ヘッド

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4178564A (en) * 1976-01-15 1979-12-11 Rca Corporation Half wave protection layers on injection lasers
JPS55115386A (en) * 1979-02-26 1980-09-05 Hitachi Ltd Semiconductor laser unit
US4280107A (en) * 1979-08-08 1981-07-21 Xerox Corporation Apertured and unapertured reflector structures for electroluminescent devices
JPS5814590A (ja) * 1981-07-17 1983-01-27 Matsushita Electric Ind Co Ltd 半導体レ−ザ
US4731792A (en) * 1983-06-29 1988-03-15 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device with decreased light intensity noise
JPS61207091A (ja) * 1985-03-11 1986-09-13 Sharp Corp 半導体レ−ザ素子

Also Published As

Publication number Publication date
JPH0644663B2 (ja) 1994-06-08
FR2613548A1 (fr) 1988-10-07
DE3810901A1 (de) 1988-10-27
FR2613548B1 (fr) 1992-08-07
US4852112A (en) 1989-07-25
JPS63244894A (ja) 1988-10-12

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Legal Events

Date Code Title Description
OP8 Request for examination as to paragraph 44 patent law
8125 Change of the main classification

Ipc: H01S 3/085

D2 Grant after examination
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8339 Ceased/non-payment of the annual fee