DE3789913T2 - Leistungstransistor. - Google Patents

Leistungstransistor.

Info

Publication number
DE3789913T2
DE3789913T2 DE3789913T DE3789913T DE3789913T2 DE 3789913 T2 DE3789913 T2 DE 3789913T2 DE 3789913 T DE3789913 T DE 3789913T DE 3789913 T DE3789913 T DE 3789913T DE 3789913 T2 DE3789913 T2 DE 3789913T2
Authority
DE
Germany
Prior art keywords
emitter
base
power transistor
ballast
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE3789913T
Other languages
German (de)
English (en)
Other versions
DE3789913D1 (de
Inventor
Takao Patent Division Emoto
Hirosi Patent Division Oodaira
Masayuki Patent Division Saito
Takeo Patent Division Shiomi
Osamu Patent Division Takikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE3789913D1 publication Critical patent/DE3789913D1/de
Application granted granted Critical
Publication of DE3789913T2 publication Critical patent/DE3789913T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H10D62/135—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/62—Electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/101—Integrated devices comprising main components and built-in components, e.g. IGBT having built-in freewheel diode
    • H10D84/121—BJTs having built-in components
    • H10D84/125—BJTs having built-in components the built-in components being resistive elements, e.g. BJT having a built-in ballasting resistor

Landscapes

  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
DE3789913T 1986-03-31 1987-03-27 Leistungstransistor. Expired - Fee Related DE3789913T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61070966A JPS62229975A (ja) 1986-03-31 1986-03-31 電力用トランジスタ

Publications (2)

Publication Number Publication Date
DE3789913D1 DE3789913D1 (de) 1994-07-07
DE3789913T2 true DE3789913T2 (de) 1994-11-03

Family

ID=13446770

Family Applications (1)

Application Number Title Priority Date Filing Date
DE3789913T Expired - Fee Related DE3789913T2 (de) 1986-03-31 1987-03-27 Leistungstransistor.

Country Status (4)

Country Link
EP (1) EP0239960B1 (cg-RX-API-DMAC7.html)
JP (1) JPS62229975A (cg-RX-API-DMAC7.html)
KR (1) KR900003838B1 (cg-RX-API-DMAC7.html)
DE (1) DE3789913T2 (cg-RX-API-DMAC7.html)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3802767A1 (de) * 1988-01-30 1989-08-10 Bosch Gmbh Robert Elektronisches geraet
US4864379A (en) * 1988-05-20 1989-09-05 General Electric Company Bipolar transistor with field shields
DE3926886C2 (de) * 1989-08-16 1999-10-21 Bosch Gmbh Robert In Planartechnologie erstellter Großchip mit Schalttransistoren
JPH07109831B2 (ja) * 1990-01-25 1995-11-22 株式会社東芝 半導体装置
US6064109A (en) * 1992-10-08 2000-05-16 Sgs-Thomson Microelectronics, Inc. Ballast resistance for producing varied emitter current flow along the emitter's injecting edge
EP0592157B1 (en) * 1992-10-08 1998-11-25 STMicroelectronics, Inc. Integrated thin film approach to achieve high ballast levels for overlay structures
SE521385C2 (sv) * 1997-04-04 2003-10-28 Ericsson Telefon Ab L M Bipolär transistorstruktur
JP3942984B2 (ja) * 2002-08-06 2007-07-11 株式会社ナノテコ バイポーラトランジスタ、マルチフィンガーバイポーラトランジスタ、バイポーラトランジスタ製造用エピタキシャル基板、及びバイポーラトランジスタの製造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL296170A (cg-RX-API-DMAC7.html) * 1962-10-04
JPS54124258A (en) * 1978-03-20 1979-09-27 Hitachi Ltd Method of producing thick film hybrid integrated circuit
JPS58132969A (ja) * 1982-02-01 1983-08-08 Mitsubishi Electric Corp 半導体装置
DE3329241A1 (de) * 1983-08-12 1985-02-21 Siemens AG, 1000 Berlin und 8000 München Leistungstransistor
DE3466195D1 (en) * 1984-01-27 1987-10-22 Toshiba Kk Thermal head
JPS6110892A (ja) * 1984-06-26 1986-01-18 株式会社東芝 発熱体

Also Published As

Publication number Publication date
JPS62229975A (ja) 1987-10-08
EP0239960A2 (en) 1987-10-07
KR900003838B1 (ko) 1990-06-02
DE3789913D1 (de) 1994-07-07
EP0239960A3 (en) 1990-04-25
JPH0511418B2 (cg-RX-API-DMAC7.html) 1993-02-15
KR870009489A (ko) 1987-10-27
EP0239960B1 (en) 1994-06-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee